# Power MOSFET, N Channel, 600 V, 11 A, 0.28 ohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:2353657/)

**URL**: https://novapart.co/products/STD13NM60N/power-mosfet-n-channel-600-v-11-a-028-ohm-to-252
**SKU**: STD13NM60N
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.9160
**Stock**: 1000+
**Lead Time**: 127 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.28ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Pow

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 90W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 600V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 11A |
| Drain Source On State Resistance | 0.28ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2353657/)

## **STB13NM60N, STD13NM60N** 

N-channel 600 V, 0.28 Ω typ., 11 A MDmesh™ II Power MOSFETs  in D²PAK and DPAK packages 

**Datasheet — production data** 

## **Features** 

**==> picture [147 x 60] intentionally omitted <==**

**----- Start of picture text -----**<br>
TAB<br>TAB<br>3<br>3<br>1 1<br>D²PAK DPAK<br>**----- End of picture text -----**<br>


|**Order code**|**VDS(@Tjmax)**|**RDS(on)max**|**ID**|
|---|---|---|---|
|STB13NM60N|650 V|0.36Ω|11 A|
|STD13NM60N||||



- 100% avalanche tested 

- Low input capacitance and gate charge 

- Low gate input resistance 

## **Applications** 

- Switching applications 

## **Figure 1.  Internal schematic diagram** 

## **Description** 

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 

**Table 1. Device summary** 

|**Order code**|**Marking**|**Packages**|**Packaging**|
|---|---|---|---|
|STB13NM60N|13NM60N|D²PAK|Tape and reel|
|STD13NM60N||DPAK||



_www.st.com_ 

June 2015 

DocID024095 Rev 3 

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This is information on a product in full production. 

**Contents** 

**STB13NM60N, STD13NM60N** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves)     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
|**4**|**Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10**|
||4.1<br>D2PAK package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10|
||4.2<br>DPAK package information  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15|
|**5**|**Packing information  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20**|
|**6**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23**|



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**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2. Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VDS|Drain-source voltage|600|V|
|VGS|Gate-source voltage|± 25|V|
|ID|Drain current (continuous) at TC= 25 °C|11|A|
|ID|Drain current (continuous) at TC= 100 °C|6.93|A|
|IDM (1)|Drain current (pulsed)|44|A|
|PTOT|Total dissipation at TC= 25 °C|90|W|
|dv/dt(2)|Peak diode recovery voltage slope|15|V/ns|
|Tstg|Storage temperature|- 55 to 150|°C|
|Tj|Max. operating junction temperature|150|°C|



1. Pulse width limited by safe operating area 

2. ISD ≤ 11 A, di/dt ≤ 400 A/µs, VDS peak ≤ V(BR)DSS, VDD = 80% V(BR)DSS. 

**Table 3. Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Value**|**Unit**|
|---|---|---|---|---|
|||**D²PAK**|**DPAK**||
|Rthj-case|Thermal resistance junction-case max|1.39||°C/W|
|Rthj-pcb|Thermal resistance junction-pcb max|30|50|°C/W|



**Table 4. Avalanche characteristics** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|IAS|Avalanche current, repetitive or not-repetitive<br>(pulse width limited by Tj max)|3.5|A|
|EAS|Single pulse avalanche energy<br>(starting TJ=25 °C, ID=IAS, VDD=50 V)|200|mJ|



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**STB13NM60N, STD13NM60N** 

**Electrical characteristics** 

## **2 Electrical characteristics** 

(TCASE = 25 °C unless otherwise specified) 

**Table 5. On/off states** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source<br>breakdown voltage|VGS= 0, ID= 1 mA|600|||V|
|IDSS|Zero gate voltage<br>drain current|VGS= 0, VDS= 600 V|||1|µA|
|||VGS= 0, VDS= 600 V,<br>TC=125 °C|||100|µA|
|IGSS|Gate-body leakage<br>current|VDS= 0, VGS= ± 25 V|||± 0.1|µA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 µA|2|3|4|V|
|RDS(on)|Static drain-source<br>on-resistance|VGS= 10 V, ID= 5.5 A||0.28|0.36|Ω|



**Table 6. Dynamic** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Ciss|Input capacitance|VGS= 0, VDS= 50 V,<br>f = 1 MHz|-|790|-|pF|
|Coss|Output capacitance||-|60|-|pF|
|Crss|Reverse transfer<br>capacitance||-|3.6|-|pF|
|Coss eq.<br>(1)|Equivalent output<br>capacitance|VGS= 0, VDS= 0 to 480 V|-|135|-|pF|
|Qg|Total gate charge|VDD= 480 V, ID= 11 A,<br>VGS= 10 V,<br>_(see Figure 16)_|-|27|-|nC|
|Qgs|Gate-source charge||-|4|-|nC|
|Qgd|Gate-drain charge||-|14|-|nC|
|RG|Gate input resistance|f=1 MHz open drain|-|4.7|-|Ω|



1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDS 

**Table 7. Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delay time|VDD= 300 V, ID= 5.5 A<br>RG= 4.7ΩVGS= 10 V<br>_(see Figure 15)_|-|3|-|ns|
|tr|Rise time||-|8|-|ns|
|td(off)|Turn-off delay time||-|30|-|ns|
|tf|Fall time||-|10|-|ns|



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**Electrical characteristics** 

**Table 8. Source drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD|Source-drain current||-||11|A|
|ISDM (1)|Source-drain current (pulsed)||-||44|A|
|VSD (2)|Forward on voltage|ISD= 11 A, VGS= 0|-||1.5|V|
|trr|Reverse recovery time|ISD= 11 A, di/dt = 100 A/µs<br>VDD= 100 V<br>_(see Figure 17)_|-|230||ns|
|Qrr|Reverse recovery charge||-|2||µC|
|IRRM|Reverse recovery current||-|18||A|
|trr|Reverse recovery time|ISD= 11 A, di/dt = 100 A/µs<br>VDD= 100 V, Tj= 150 °C<br>_(see Figure 17)_|-|290||ns|
|Qrr|Reverse recovery charge||-|2.5||µC|
|IRRM|Reverse recovery current||-|17||A|



1. Pulse width limited by safe operating area 

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% 

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**STB13NM60N, STD13NM60N** 

**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**Figure 2. Safe operating area for D²PAK** 

## **Figure 3. Thermal impedance for D²PAK** 

**==> picture [201 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
ID AM03258v1<br>(A)<br>PT TE NTE NAZIS OTT<br>MIETIN AAT ST<br>10<br>posts fiNTA 10µs<br>Sener dimes<br>100µs<br>| 2 meii |<br>1 ai 4 Tj=150°C UT 1ms<br>Tc=25°C<br>riTAL I Sinlge CoNATT 10ms<br>pulse<br>rail ET<br>0.1 Amie UI ETT<br>0.1 1 10 100 VDS(V)<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>**----- End of picture text -----**<br>


**Figure 4. Safe operating area for DPAK** 

## **Figure 5. Thermal impedance for DPAK** 

**Figure 6. Output characteristics** 

**Figure 7. Transfer characteristics** 

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**Electrical characteristics** 

## **Figure 8. Normalized V(BR)DSS vs temperature** 

**==> picture [228 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
V(BR)DSS AM09028v1<br>(norm)<br>ID=1mA<br>1.10<br>1.08<br>1.06<br>1.04<br>1.02<br>1.00<br>0.98<br>0.96<br>0.94<br>0.92<br>-50 -25 0 25 50 75 100 TJ(°C)<br>**----- End of picture text -----**<br>


**Figure 10. Gate charge vs gate-source voltage** 

**Figure 9. Static drain-source on-resistance** 

**==> picture [228 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM03302v1<br>RDS(on)<br>(Ω)<br>0.30 VGS=10V<br>0.28<br>0.26<br>0.24<br>0.22<br>0.2<br>0 2 4 6 8 10 ID(A)<br>**----- End of picture text -----**<br>


**Figure 11. Capacitance variations** 

**==> picture [462 x 387] intentionally omitted <==**

**----- Start of picture text -----**<br>
VGS AM03305v1 � ���������<br>(V) VDS(V) ����<br>VDD=480V<br>12<br>VDS ID=11A 500<br>����<br>10 ����<br>400<br>8<br>300 ���<br>6<br>����<br>200<br>4<br>��<br>2 100 ����<br>0 0 �<br>0 10 20 30 Qg(nC) ��� � �� ��� ������<br>Figure 12. Normalized gate threshold voltage vs  Figure 13. Normalized on-resistance vs<br>temperature temperature<br>VGS(th) AM03306v1 RDS(on) AM03307v1<br>(norm) (norm) ID=5.5A<br>1.10 2.1<br>ID=250µA VGS=10V<br>1.9<br>1.00 1.7<br>1.5<br>0.90 1.3<br>1.1<br>0.80 0.9<br>0.7<br>0.70 0.5<br>-50 -25 0 25 50 75 100 TJ(°C) -50 -25 0 25 50 75 100 TJ(°C)<br>**----- End of picture text -----**<br>


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**Electrical characteristics** 

**Figure 14. Source-drain diode forward characteristics** 

**==> picture [228 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
VSD AM09290v1<br>(V)<br>TJ=-50°C<br>1.2 TJ=25°C<br>1.0<br>0.8 TJ=150°C<br>0.6<br>0.4<br>0 2 4 6 8 10 ISD(A)<br>**----- End of picture text -----**<br>


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**Test circuits** 

## **3 Test circuits** 

**Figure 15. Switching times test circuit for resistive load** 

**Figure 16. Gate charge test circuit** 

**==> picture [462 x 162] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDD<br>12V 47kΩ<br>1kΩ<br>100nF<br>RL 2200 3.3<br>μF μF<br>VDD IG=CONST<br>VD Vi=20V=VGMAX 100Ω D.U.T.<br>VGS<br>2200<br>RG D.U.T. μF 2.7kΩ VG<br>PW<br>47kΩ<br>1kΩ<br>PW<br>AM01468v1 AM01469v1<br>**----- End of picture text -----**<br>


**Figure 17. Test circuit for inductive load Figure 18. Unclamped inductive load test circuit switching and diode recovery times** 

**==> picture [462 x 346] intentionally omitted <==**

**----- Start of picture text -----**<br>
L<br>A A A<br>D<br>FAST L=100μH VD<br>G D.U.T. DIODE 2200 3.3<br>S B 3.3 1000 μF μF VDD<br>25 Ω B B D μF μF VDD ID<br>G<br>RG S<br>Vi D.U.T.<br>Pw<br>AM01470v1 AM01471v1<br>Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform<br>V(BR)DSS ton toff<br>VD tdon tr tdoff tf<br>90% 90%<br>IDM<br>10%<br>ID 0 10% VDS<br>VDD VDD 90%<br>VGS<br>AM01472v1 0 10% AM01473v1<br>**----- End of picture text -----**<br>


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**Package information** 

## **4 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com_ . ECOPACK is an ST trademark. 

## **4.1 D[2] PAK package information** 

**==> picture [236 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 21. D²PAK (TO-263) type A package outline<br>**----- End of picture text -----**<br>


**==> picture [405 x 452] intentionally omitted <==**

**----- Start of picture text -----**<br>
���������������<br>**----- End of picture text -----**<br>


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**Package information** 

**Table 9. D²PAK (TO-263) type A package mechanical data** 

||**Table 9. D²PAK(TO-263) type Apackage mechanical data**|**Table 9. D²PAK(TO-263) type Apackage mechanical data**|**Table 9. D²PAK(TO-263) type Apackage mechanical data**|
|---|---|---|---|
|**Dim.**|**mm**|||
||**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|A1|0.03||0.23|
|b|0.70||0.93|
|b2|1.14||1.70|
|c|0.45||0.60|
|c2|1.23||1.36|
|D|8.95||9.35|
|D1|7.50|7.75|8.00|
|D2|1.10|1.30|1.50|
|E|10||10.40|
|E1|8.50|8.70|8.90|
|E2|6.85|7.05|7.25|
|e||2.54||
|e1|4.88||5.28|
|H|15||15.85|
|J1|2.49||2.69|
|L|2.29||2.79|
|L1|1.27||1.40|
|L2|1.30||1.75|
|R||0.4||
|V2|0°||8°|



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**Package information** 

**Figure 22. D²PAK (TO-263) type B package outline** 

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**Package information** 

**Table 10. D²PAK (TO-263) type B package mechanical data** 

|**Dim.**|**mm**|**mm**|**mm**|
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.36||4.60|
|A1|0||0.25|
|b|0.70||0.93|
|b2|1.14||1.70|
|c|0.38||0.694|
|c1|0.38||0.534|
|c2|1.19||1.36|
|D|8.6||9.35|
|D1|6.9|||
|E|10||10.55|
|E1|8.1|||
|e||2.54||
|H|15||15.85|
|L|1.9||2.79|
|L1|||1.65|
|L2|||1.78|
|L3||0.25||
|L4|4.78||5.28|



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**Package information** 

**==> picture [135 x 13] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 23. D²PAK footprint [(a)]<br>**----- End of picture text -----**<br>


��������� 

a. All dimension are in millimeters 

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**Package information** 

## **4.2 DPAK package information** 

**==> picture [238 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 24. DPAK (TO-252) type A2 package outline<br>**----- End of picture text -----**<br>


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**Package information** 

**Table 11. DPAK (TO-252) type A2 package mechanical data** 

|**Dim.**|**mm**|**mm**|**mm**|
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|2.20||2.40|
|A1|0.90||1.10|
|A2|0.03||0.23|
|b|0.64||0.90|
|b4|5.20||5.40|
|c|0.45||0.60|
|c2|0.48||0.60|
|D|6.00||6.20|
|D1|4.95|5.10|5.25|
|E|6.40||6.60|
|E1|5.10|5.20|5.30|
|e|2.16|2.28|2.40|
|e1|4.40||4.60|
|H|9.35||10.10|
|L|1.00||1.50|
|L1|2.60|2.80|3.00|
|L2|0.65|0.80|0.95|
|L4|0.60||1.00|
|R||0.20||
|V2|0°||8°|



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**Package information** 

## **Figure 25. DPAK (TO-252) type C2 outline** 

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**Package information** 

**Table 12. DPAK (TO-252) type C2 package mechanical data** 

|**Dim.**|**mm**|**mm**|**mm**|
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|2.20|2.30|2.38|
|A1|0.90|1.01|1.10|
|A2|0.00||0.10|
|b|0.72||0.85|
|b4|5.13|5.33|5.46|
|c|0.47||0.60|
|c2|0.47||0.60|
|D|6.00|6.10|6.20|
|D1|5.25|-|-|
|E|6.50|6.60|6.70|
|E1|5.20|-|-|
|e|2.186|2.286|2.386|
|H|9.80|10.10|10.40|
|L|1.40|1.50|1.70|
|L1|2.90 REF|||
|L2|0.90|-|1.25|
|L3|0.51 BSC|||
|L4|0.60|0.80|1.00|
|L6|1.80 BSC|||
|Θ1|5°|7°|9°|
|Θ2|5°|7°|9°|
|V2|0°||8°|



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**Package information** 

## **Figure 26. DPAK (TO-252) footprint[(b)]** 

**==> picture [405 x 350] intentionally omitted <==**

**----- Start of picture text -----**<br>
�����������<br>**----- End of picture text -----**<br>


- b. All dimensions are in millimeters 

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**Packing information** 

## **5 Packing information** 

## **Figure 27. Tape** 

**==> picture [353 x 317] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 pitches cumulative<br>tolerance on tape +/- 0.2 mm<br>Top cover P0 D P2<br>T tape<br>E<br>1 So od oo lb ON<br>F<br>K0 W<br>B0<br>f P t [IIE]<br>A0 P1 D1<br>ps<br>User direction of feed<br>R<br>See Oe<br>ee<br>ts Bending radius<br>User direction of feed<br>AM08852v2<br>**----- End of picture text -----**<br>


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**Packing information** 

**==> picture [405 x 267] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 28. Reel<br>T<br>REEL DIMENSIONS<br>40mm min.<br>Access hole<br>At sl ot location<br>B<br>D<br>C<br>N<br>A<br>Full radius Tape slot  G measured at hub<br>in core for<br>tape start 25 mm min.<br>width<br>AM08851v2<br>**----- End of picture text -----**<br>


**Table 13. D²PAK (TO-263) tape and reel mechanical data** 

||**Tape**|**Tape**||**Reel**|**Reel**|
|---|---|---|---|---|---|
|**Dim.**|**mm**<br>**Min.**<br>**Max.**||**Dim.**|**mm**||
||**Min.**|||**Min.**|**Max.**|
|A0|10.5|10.7|A||330|
|B0|15.7|15.9|B|1.5||
|D|1.5|1.6|C|12.8|13.2|
|D1|1.59|1.61|D|20.2||
|E|1.65|1.85|G|24.4|26.4|
|F|11.4|11.6|N|100||
|K0|4.8|5.0|T||30.4|
|P0|3.9|4.1||||
|P1|11.9|12.1||Base qty|1000|
|P2|1.9|2.1||Bulk qty|1000|
|R|50|0.35<br>24.3||||
|T|0.25|||||
|W|23.7|||||



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**Packing information** 

**Table 14. DPAK (TO-252) tape and reel mechanical data** 

||**Tape**|**Tape**||**Reel**|**Reel**|
|---|---|---|---|---|---|
|**Dim.**|**mm**||**Dim.**|**mm**||
||**Min.**|**Max.**||**Min.**|**Max.**|
|A0|6.8|7|A||330|
|B0|10.4|10.6|B|1.5||
|B1||12.1|C|12.8|13.2|
|D|1.5|1.6|D|20.2||
|D1|1.5||G|16.4|18.4|
|E|1.65|1.85|N|50||
|F|7.4|7.6|T||22.4|
|K0|2.55|2.75||||
|P0|3.9|4.1||Base qty.|2500|
|P1|7.9|8.1||Bulk qty.|2500|
|P2|1.9|2.1||||
|R|40|||||
|T|0.25|0.35||||
|W|15.7|16.3||||



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DocID024095 Rev 3 

**STB13NM60N, STD13NM60N** 

**Revision history** 

## **6 Revision history** 

**Table 15. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|18-Dec-2012|1|First release|
|10-Jul-2014|2|– Updated:_Section 3: Test circuits_<br>– Updated:_Section 4: Package information_<br>– Minor text changes|
|19-Jun-2015|3|– Updated_4: Package information_<br>– Minor text changes|



DocID024095 Rev 3 

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**STB13NM60N, STD13NM60N** 

## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2015 STMicroelectronics – All rights reserved 

24/24 DocID024095 Rev 3 



## Links

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---

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