# Power MOSFET, N Channel, 500 V, 8 A, 0.45 ohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:3367014RL/)

**URL**: https://novapart.co/products/STD11N50M2/power-mosfet-n-channel-500-v-8-a-045-ohm-to-252
**SKU**: STD11N50M2
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4300
**Stock**: 500+
**Lead Time**: 127 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | MDmesh M2 |
| Qualification | - |
| Power Dissipation | 85W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 500V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 8A |
| Drain Source On State Resistance | 0.45ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3367014RL/)

**STD11N50M2, STF11N50M2** 

Datasheet 

## N-channel 500 V, 0.45 Ω typ., 8 A MDmesh™ M2 Power MOSFETs in DPAK and 

TO-220FP packages 

## **Features** 

**==> picture [124 x 178] intentionally omitted <==**

**----- Start of picture text -----**<br>
TAB<br>3<br>e 2<br>1<br>3<br>2<br>1<br>DPAK TO-220FP<br>D(2, TAB)<br>G(1)<br>S(3) AM01475V1<br>**----- End of picture text -----**<br>


|**Order code**|**VDS @ TJmax**|**RDS(on)max.**|**ID**<br>~~—~~|**Package**<br>~~—~~|
|---|---|---|---|---|
|STD11N50M2|550 V|0.53 Ω|8 A|DPAK|
|STF11N50M2||||TO-220FP|



- Extremely low gate charge 

- Excellent output capacitance (COSS) profile 

- 100% avalanche tested 

- Zener-protected 

## **Applications** 

- Switching applications 

## **Description** 

These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters. 

## **Product status** ~~[on~~ 

**Product status** STD11N50M2 STF11N50M2 

|**Product summary**<br>~~[po~~|**Product summary**<br>~~[po~~|
|---|---|
|**Order code**<br>~~a~~|**STD11N50M2**<br>~~a~~|
|**Marking**|11N50M2|
|**Package**|DPAK|
|**Packing**|Tape and reel|
|**Order code**<br>e~~e~~|**STF11N50M2**<br>~~e~~|
|**Marking**|11N50M2|
|**Package**|TO-220FP|
|**Packing**|Tube|



**DS10177** - **Rev 3** - **October 2018** For further information contact your local STMicroelectronics sales office. 

www.st.com 

**STD11N50M2, STF11N50M2 Electrical ratings** 

**1** 

## **Electrical ratings** 

**Table 1. Absolute maximum ratings** 

|**Sbl**|**Pt**|**Value**|**Value**|**Uit**|
|---|---|---|---|---|
|**ymo**|**arameer**|**DPAK**|**TO-220FP**|**n**|
|VGS|Gate-source voltage|±25||V|
|ID|Drain current (continuous) at TC= 25 °C|8||A|
|ID|Drain current (continuous) at TC= 100 °C|5||A|
|IDM (1)|Drain current (pulsed)|32||A|
|PTOT|Total power dissipation at TC= 25 °C|85|25|W|
|dv/dt(2)|Peak diode recovery voltage slope|15||V/ns|
|dv/dt(3)|MOSFET dv/dt ruggedness|50||V/ns|
|VISO|Insulation withstand voltage (RMS) from all three leads<br>to external heat sink (t=1 s; TC= 25 °C)||2.5|kV|
|Tj|Operating junction temperature range|-55 to 150||°C|
|Tstg|Storage temperature range||||



_1. Pulse width limited by safe operating area._ 

_2. ISD ≤ 8 A, di/dt ≤ 400 A/μs, VDS(peak) < V(BR)DSS, VDD = 400 V._ 

_3. VDS ≤ 400 V._ 

## **Table 2. Thermal data** 

|**Sbl**|**Pt**|**Value**|**Value**|**Uit**|
|---|---|---|---|---|
|**ymo**|**arameer**|**DPAK**|**TO-220FP**|**n**|
|Rthj-case|Thermal resistance junction-case|1.47|5|°C/W|
|Rthj-pcb(1)|Thermal resistance junction-pcb|50||°C/W|
|Rthj-amb|Thermal resistance junction-ambient||62.5|°C/W|



_1. When mounted on 1 inch² FR-4, 2 Oz copper board._ 

**Table 3. Avalanche characteristics** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|IAR|Avalanche current, repetitive or not-repetitive<br>(pulse width limited by TjMax)|2|A|
|EAS|Single pulse avalanche energy<br>(starting Tj= 25 °C, ID= IAR, VDD= 50 V)|190|mJ|



**DS10177** - **Rev 3** 

**page 2/22** 

**STD11N50M2, STF11N50M2 Electrical characteristics** 

## **2** 

## **Electrical characteristics** 

(TCASE = 25 °C unless otherwise specified) 

**Table 4. On/off states** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source breakdown<br>voltage|ID= 1 mA, VGS= 0 V|500|||V|
|IDSS|Zero gate voltage drain<br>current|VDS= 500 V, VGS= 0 V|||1|µA|
|||VDS= 500 V, VGS= 0 V,<br>TC= 125 °C(1)|||100|µA|
|IGSS|Gate body leakage current|VDS= 0 V, VGS= ±25 V|||±10|µA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 µA|2|3|4|V|
|RDS(on)|Static drain-source on<br>resistance|VGS= 10 V, ID= 4 A||0.45|0.53|Ω|



_1. Defined by design, not subject to production test._ 

**Table 5. Dynamic** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Ciss|Input capacitance|VDS= 100 V, f = 1 MHz, VGS= 0 V|-|395|-|pF|
|Coss|Output capacitance|||26|||
|Crss|Reverse transfer capacitance|||1|||
|Coss eq.(1)|Equivalent output<br>capacitance|VGS= 0 V, VDS= 0 to 400 V|-|108|-|pF|
|Rg|Gate input resistance|f = 1 MHz open drain|-|6.3|-|Ω|
|Qg|Total gate charge|VDD= 400 V, ID= 8 A,<br>VGS= 0 to 10 V(seeFigure 16. Test<br>circuit for gate charge behavior)|-|12|-|nC|
|Qgs|Gate-source charge|||2|||
|Qgd|Gate-drain charge|||6.4|||



_1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS._ 

**Table 6. Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delay time|VDD= 250 V, ID= 4 A,<br>RG= 4.7 Ω, VGS= 10 V<br>(seeFigure 15. Test circuit for<br>resistive load switching timesand<br>Figure 20. Switching time waveform)|-|11|-|ns|
|tr|Rise time|||9|||
|td(off)|Turn-off delay time|||8|||
|tf|Fall time|||28.5|||



**DS10177** - **Rev 3** 

**page 3/22** 

**STD11N50M2, STF11N50M2 Electrical characteristics** 

## **Table 7. Source-drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD|Source-drain current||-||8|A|
|ISDM (1)|Source-drain current (pulsed)||||32||
|VSD (2)|Forward on voltage|ISD= 8 A, VGS= 0 V|-||1.6|V|
|trr|Reverse recovery time|ISD= 8 A, di/dt = 100 A/µs<br>VDD= 60 V (seeFigure 17. Test<br>circuit for inductive load switching and<br>diode recovery times)|-|258||ns|
|Qrr|Reverse recovery charge|||1.84||μC|
|IRRM|Reverse recovery current|||14.3||A|
|trr|Reverse recovery time|ISD= 8 A, di/dt = 100 A/µs<br>VDD= 60 V, Tj= 150 °C (see<br>Figure 17. Test circuit for inductive<br>load switching and diode recovery<br>times)|-|370||ns|
|Qrr|Reverse recovery charge|||2.87||μC|
|IRRM|Reverse recovery current|||15.5||A|



_1. Pulse width limited by safe operating area._ 

_2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%._ 

**DS10177** - **Rev 3** 

**page 4/22** 

**STD11N50M2, STF11N50M2 Electrical characteristics (curves)** 

## **2.1 Electrical characteristics (curves)** 

**Figure 1. Safe operating area for DPAK** 

**==> picture [157 x 131] intentionally omitted <==**

**----- Start of picture text -----**<br>
ID GIPG050620141220SA<br>(A)<br>10µs<br>10<br>100µs<br>1 1ms<br>10ms<br>Tj=150°C<br>Tc=25 ° C<br>Single pulse<br>0.1<br>0.1 1 10 100 VDS(V)<br>DS(on)<br>Operation in this area isLimited by max R<br>**----- End of picture text -----**<br>


**==> picture [167 x 156] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 2. Thermal impedance for DPAK<br>K GC20460<br>10 [0]<br>10 [-1]<br>10 [-2]<br>10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] tp (s)<br>**----- End of picture text -----**<br>


**Figure 3. Safe operating area for TO-220FP** 

**==> picture [173 x 142] intentionally omitted <==**

**----- Start of picture text -----**<br>
ID GIPG050620141300SA<br>(A)<br>10<br>10µs<br>1 100µs<br>1ms<br>10ms<br>0.1<br>Tj=150°C<br>Tc=25°C<br>Single pulse<br>0.01<br>0.1 1 10 100 VDS(V)<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>**----- End of picture text -----**<br>


**Figure 4. Thermal impedance for TO-220FP** 

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**----- Start of picture text -----**<br>
K  GC20940<br>10  [-1]<br>10  [-2]<br>10  [-3]<br>10  [-4] 10  [-3] 10  [-2] 10  [-1] 10  [0] t p (s)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Figure 5. Output characterisics Figure 6. Transfer characteristics<br>GIPG090620141310SA GIPG090620141514SA<br>ID(A) ID<br>VGS=8, 9, 10V (A) VDS=18V<br>16 16<br>7V<br>6V<br>12 12<br>8 8<br>5V<br>4 4<br>4V<br>0 0<br>0 4 8 12 16 VDS(V) 0 2 4 6 8 VGS(V)<br>**----- End of picture text -----**<br>


**DS10177** - **Rev 3** 

**page 5/22** 

**STD11N50M2, STF11N50M2 Electrical characteristics (curves)** 

**Figure 7. Gate charge vs gate-source voltage** 

**==> picture [163 x 142] intentionally omitted <==**

**----- Start of picture text -----**<br>
VGS GIPG090620141521SAVDS<br>(V) VDS VDD=400V (V)<br>10 ID=8A 375<br>8 300<br>6 225<br>4 150<br>2 75<br>0 0<br>0 2 4 6 8 10 12 Qg(nC)<br>**----- End of picture text -----**<br>


**Figure 9. Capacitance variations** 

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**----- Start of picture text -----**<br>
C GIPG090620141537SA<br>(pF)<br>1000<br>Ciss<br>100<br>Coss<br>10<br>f =1 MHz<br>1 Crss<br>0.1<br>0.1 1 10 100 VDS(V)<br>**----- End of picture text -----**<br>


**Figure 11. Normalized gate threshold voltage vs temperature** 

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**----- Start of picture text -----**<br>
VGS(th) GIPG090620140915SA<br>(norm)<br>ID=250µA<br>1.1<br>1.0<br>0.9<br>0.8<br>0.7<br>0.6<br>-75 -25 25 75 125 TJ(°C)<br>**----- End of picture text -----**<br>


**Figure 8. Static drain-source on-resistance** 

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RDS(on) GIPG090620141528SA<br>(Ω)<br>VGS=10V<br>0.47<br>0.46<br>0.45<br>0.44<br>0.43<br>1 2 3 4 5 6 7 ID(A)<br>**----- End of picture text -----**<br>


**Figure 10. Output capacitance stored energy** 

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**----- Start of picture text -----**<br>
Eoss GIPG090620141544SA<br>(µJ)<br>2.4<br>2.0<br>1.6<br>1.2<br>0.8<br>0.4<br>0.0<br>0 100 200 300 400 VDS(V)<br>**----- End of picture text -----**<br>


**Figure 12.  Normalized on-resistance vs temperature** 

**==> picture [171 x 142] intentionally omitted <==**

**----- Start of picture text -----**<br>
RDS(on) GIPG090620140921SA<br>(norm)<br>VGS=10V<br>2.2<br>1.8<br>1.4<br>1<br>0.6<br>0.2<br>-75 -25 25 75 125 TJ(°C)<br>**----- End of picture text -----**<br>


**DS10177** - **Rev 3** 

**page 6/22** 

**STD11N50M2, STF11N50M2 Electrical characteristics (curves)** 

**==> picture [513 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 13. Normalized V(BR)DSS vs temperature Figure 14. Source-drain diode forward characteristics<br>V(BR)DSS(norm) GIPG090620141002SA VSD(V) GIPG090620141010SA<br>ID=1mA TJ=-50°C<br>1.08 1<br>1.04 0.9 TJ=25°C<br>1.00 0.8<br>0.96 0.7 TJ=150°C<br>0.92 0.6<br>0.88 0.5<br>-75 -25 25 75 125 TJ(°C) 1 2 3 4 5 ISD(A)<br>**----- End of picture text -----**<br>


**DS10177** - **Rev 3** 

**page 7/22** 

**STD11N50M2, STF11N50M2 Test circuits** 

**3 Test circuits** 

**==> picture [513 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 15. Test circuit for resistive load switching times Figure 16. Test circuit for gate charge behavior<br>VDD<br>12 V 47 kΩ<br>1 kΩ<br>100 nF<br>RL 2200 3.3<br>+ μF μF VDD<br>VD VGS IG= CONST 100 Ω D.U.T.<br>VGS RG D.U.T. pulse width 2200 + 2.7 kΩ VG<br>pulse width μF<br>47 kΩ<br>1 kΩ<br>AM01468v1 AM01469v1<br>**----- End of picture text -----**<br>


**==> picture [513 x 184] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 17. Test circuit for inductive load switching and<br>Figure 18. Unclamped inductive load test circuit<br>diode recovery times<br>A A A L<br>G D D.U.T. fastdiode 100 µH VD 2200 3.3<br>25 Ω S B B B D µF3.3 + 1000µF VDD ID + µF µF VDD<br>G D.U.T.<br>+ RG S Vi D.U.T.<br>_ pulse width<br>AM01471v1<br>AM01470v1<br>**----- End of picture text -----**<br>


**==> picture [513 x 172] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 20. Switching time waveform<br>Figure 19. Unclamped inductive waveform<br>ton toff<br>V(BR)DSS<br>td(on) tr td(off) tf<br>VD<br>90% 90%<br>IDM<br>ID 0 10% VDS 10%<br>VDD VDD VGS 90%<br>AM01472v1 0 10%<br>AM01473v1<br>**----- End of picture text -----**<br>


**DS10177** - **Rev 3** 

**page 8/22** 

**STD11N50M2, STF11N50M2 Package information** 

**4 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: www.st.com. ECOPACK[®] is an ST trademark. 

**DS10177** - **Rev 3** 

**page 9/22** 

**STD11N50M2, STF11N50M2 DPAK (TO-252) type A package information** 

## **4.1 DPAK (TO-252) type A package information** 

**Figure 21. DPAK (TO-252) type A package outline** 

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0068772_A_25<br>**----- End of picture text -----**<br>


**DS10177** - **Rev 3** 

**page 10/22** 

**STD11N50M2, STF11N50M2 DPAK (TO-252) type A package information** 

**Table 8. DPAK (TO-252) type A mechanical data** 

|**Di**|**mm**|**mm**|**mm**|
|---|---|---|---|
|**m.**|**Min.**|**Typ.**|**Max.**|
|A|2.20||2.40|
|A1|0.90||1.10|
|A2|0.03||0.23|
|b|0.64||0.90|
|b4|5.20||5.40|
|c|0.45||0.60|
|c2|0.48||0.60|
|D|6.00||6.20|
|D1|4.95|5.10|5.25|
|E|6.40||6.60|
|E1|4.60|4.70|4.80|
|e|2.159|2.286|2.413|
|e1|4.445|4.572|4.699|
|H|9.35||10.10|
|L|1.00||1.50|
|(L1)|2.60|2.80|3.00|
|L2|0.65|0.80|0.95|
|L4|0.60||1.00|
|R||0.20||
|V2|0°||8°|



**DS10177** - **Rev 3** 

**page 11/22** 

**STD11N50M2, STF11N50M2 DPAK (TO-252) type C package information** 

**4.2 DPAK (TO-252) type C package information** 

**Figure 22. DPAK (TO-252) type C package outline** 

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**----- Start of picture text -----**<br>
0068772_C_25<br>**----- End of picture text -----**<br>


**DS10177** - **Rev 3** 

**page 12/22** 

**STD11N50M2, STF11N50M2 DPAK (TO-252) type C package information** 

**Table 9. DPAK (TO-252) type C mechanical data** 

|**Di**|**mm**|**mm**|**mm**|
|---|---|---|---|
|**m.**|**Min.**|**Typ.**|**Max.**|
|A|2.20|2.30|2.38|
|A1|0.90|1.01|1.10|
|A2|0.00||0.10|
|b|0.72||0.85|
|b4|5.13|5.33|5.46|
|c|0.47||0.60|
|c2|0.47||0.60|
|D|6.00|6.10|6.20|
|D1|5.25|||
|E|6.50|6.60|6.70|
|E1|4.70|||
|e|2.186|2.286|2.386|
|H|9.80|10.10|10.40|
|L|1.40|1.50|1.70|
|L1|2.90 REF|||
|L2|0.90||1.25|
|L3|0.51 BSC|||
|L4|0.60|0.80|1.00|
|L6|1.80 BSC|||
|θ1|5°|7°|9°|
|θ2|5°|7°|9°|
|V2|0°||8°|



**DS10177** - **Rev 3** 

**page 13/22** 

**STD11N50M2, STF11N50M2 DPAK (TO-252) type E package information** 

**4.3 DPAK (TO-252) type E package information** 

**Figure 23. DPAK (TO-252) type E package outline** 

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**==> picture [54 x 61] intentionally omitted <==**

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**----- Start of picture text -----**<br>
0068772_type-E_rev.25<br>**----- End of picture text -----**<br>


**DS10177** - **Rev 3** 

**page 14/22** 

**STD11N50M2, STF11N50M2 DPAK (TO-252) type E package information** 

**Table 10. DPAK (TO-252) type E mechanical data** 

|**Di**|**mm**|**mm**|**mm**|
|---|---|---|---|
|**m.**|**Min.**|**Typ.**|**Max.**|
|A|2.18||2.39|
|A2|||0.13|
|b|0.65||0.884|
|b4|4.95||5.46|
|c|0.46||0.61|
|c2|0.46||0.60|
|D|5.97||6.22|
|D1|5.21|||
|E|6.35||6.73|
|E1|4.32|||
|e||2.286||
|e1||4.572||
|H|9.94||10.34|
|L|1.50||1.78|
|L1||2.74||
|L2|0.89||1.27|
|L4|||1.02|



**Figure 24. DPAK (TO-252) recommended footprint (dimensions are in mm)** 

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**----- Start of picture text -----**<br>
FP_0068772_25<br>**----- End of picture text -----**<br>


**DS10177** - **Rev 3** 

**page 15/22** 

**STD11N50M2, STF11N50M2 DPAK (TO-252) packing information** ~~To~~ 

**4.4** 

## **DPAK (TO-252) packing information** 

## **Figure 25. DPAK (TO-252) tape outline** 

**==> picture [398 x 316] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 pitches cumulative<br>tolerance on tape +/- 0.2 mm<br>Top cover P0 D P2<br>T tape<br>E<br>F<br>B1 J) K0 B0 paeg e s W<br>I<br>f f  PEREllos oe oes:<br>For machine ref. only A0 P1 D1<br>including draft and<br>radii concentric around B0<br>User direction of feed<br>R<br>—— Bending radius<br>User direction of feed<br>AM08852v1<br>**----- End of picture text -----**<br>


**DS10177** - **Rev 3** 

**page 16/22** 

**STD11N50M2, STF11N50M2 DPAK (TO-252) packing information** 

**Figure 26. DPAK (TO-252) reel outline** 

**==> picture [363 x 208] intentionally omitted <==**

**----- Start of picture text -----**<br>
T<br>40mm min.<br>access hole<br>at slot location<br>B<br>D<br>C<br>N<br>A<br>Tape slot  G measured<br>in core for  at hub<br>Full radius  tape start<br>2.5mm min.width<br>**----- End of picture text -----**<br>


AM06038v1 

**Table 11. DPAK (TO-252) tape and reel mechanical data** 

||**Tape**|**Tape**||**Reel**|**Reel**|
|---|---|---|---|---|---|
|**Di**|**mm**||**Di**|**mm**||
|**m.**|**Min.**|**Max.**|**m.**|**Min.**|**Max.**|
|A0|6.8|7|A||330|
|B0|10.4|10.6|B|1.5||
|B1||12.1|C|12.8|13.2|
|D|1.5|1.6|D|20.2||
|D1|1.5||G|16.4|18.4|
|E|1.65|1.85|N|50||
|F|7.4|7.6|T||22.4|
|K0|2.55|2.75||||
|P0|3.9|4.1|Base qty.||2500|
|P1|7.9|8.1|Bulk qty.||2500|
|P2|1.9|2.1||||
|R|40|||||
|T|0.25|0.35||||
|W|15.7|16.3||||



**DS10177** - **Rev 3** 

**page 17/22** 

**STD11N50M2, STF11N50M2 TO-220FP package information** 

## **4.5 TO-220FP package information** 

**Figure 27. TO-220FP package outline** 

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**----- Start of picture text -----**<br>
7012510_Rev_12_B<br>**----- End of picture text -----**<br>


**DS10177** - **Rev 3** 

**page 18/22** 

**STD11N50M2, STF11N50M2 TO-220FP package information** 

## **Table 12. TO-220FP package mechanical data** 

|**Di**|**mm**|**mm**|**mm**|
|---|---|---|---|
|**m.**|**Min.**|**Typ.**|**Max.**|
|A|4.4||4.6|
|B|2.5||2.7|
|D|2.5||2.75|
|E|0.45||0.7|
|F|0.75||1|
|F1|1.15||1.70|
|F2|1.15||1.70|
|G|4.95||5.2|
|G1|2.4||2.7|
|H|10||10.4|
|L2||16||
|L3|28.6||30.6|
|L4|9.8||10.6|
|L5|2.9||3.6|
|L6|15.9||16.4|
|L7|9||9.3|
|Dia|3||3.2|



**DS10177** - **Rev 3** 

**page 19/22** 

**STD11N50M2, STF11N50M2** 

## **Revision history** 

**Table 13. Document revision history** 

|**Date**|**Version**|**Changes**|
|---|---|---|
|12-Mar-2014|1|First release.|
|17-Jun-2014|2|– Modified: title<br>– Modified: dv/dt values in_Table 2_<br>– Modified: values in_Table 4_<br>– Modified: RDS(on)value in_Table 5_<br>– Modified: the entire typical values in_Table 6_,_7_and_8_<br>– Added:_Section 2.1: Electrical characteristics (curves)_<br>– Updated:_Section 4: Package mechanical data_<br>– Minor text changes|
|26-Oct-2018|3|Removed maturity status indication from cover page. The document status is<br>production data.<br>Modified title, features and description on cover page.<br>UpdatedSection 4 Package information.<br>Minor text changes.|



**DS10177** - **Rev 3** 

**page 20/22** 

**STD11N50M2, STF11N50M2 Contents** 

## **Contents** 

|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2**|
|---|---|---|
|**2**|**Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3**||
||**2.1**|Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5|
|**3**|**Test**|**circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8**|
|**4**|**Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9**||
||**4.1**|DPAK (TO-252) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9|
||**4.2**|DPAK (TO-252) type C package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11|
||**4.3**|DPAK (TO-252) type E package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13|
||**4.4**|DPAK (TO-252) packing information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15|
||**4.5**|TO-220FP package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17|
|**Revision**||**history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20**|



**DS10177** - **Rev 3** 

**page 21/22** 

**STD11N50M2, STF11N50M2** 

## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2018 STMicroelectronics – All rights reserved 

**DS10177** - **Rev 3** 

**page 22/22** 



## Links

- [View this product on Novapart](https://novapart.co/products/STD11N50M2/power-mosfet-n-channel-500-v-8-a-045-ohm-to-252)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/std11n50m2/mosfet-n-ch-500v-8a-150deg-c-85w/dp/3367014RL)
---

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