# Power MOSFET, N Channel, 600 V, 8 A, 0.57 ohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:2098152/)

**URL**: https://novapart.co/products/STD10NM60ND/power-mosfet-n-channel-600-v-8-a-057-ohm-to-252
**SKU**: STD10NM60ND
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.6840
**Stock**: 1000+
**Lead Time**: 127 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.57ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dis

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 70W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 600V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 8A |
| Drain Source On State Resistance | 0.57ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2098152/)

## **STD10NM60ND, STF10NM60ND, STP10NM60ND** 

N-channel 600 V, 0.57 Ω typ., 8 A, FDmesh™ II Power MOSFETs in DPAK, TO-220FP and TO-220 packages 

Datasheet - production data 

## **Features** 

|**Order code**|**VDS @**<br>**Tjmax.**|**RDS(on)**<br>**max.**|**ID**|**PTOT**|
|---|---|---|---|---|
|STD10NM60ND|650 V|0.60 Ω|8 A|70 W|
|STF10NM60ND||||25 W|
|STP10NM60ND||||70 W|



- Fast-recovery body diode 

**Figure 1: Internal schematic diagram** 

- Low gate charge and input capacitance 

- Low on-resistance RDS(on) 

- 100% avalanche tested 

- High dv/dt ruggedness 

**==> picture [141 x 145] intentionally omitted <==**

**----- Start of picture text -----**<br>
D(2, TAB)<br>G(1)<br>S(3)<br>AM01475v1_noZen<br>**----- End of picture text -----**<br>


## **Applications** 

- Switching applications 

## **Description** 

These FDmesh™ II Power MOSFETs with fastrecovery body diode are produced using MDmesh™ II technology. Utilizing a new striplayout vertical structure, these devices feature low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift converters. 

**Table 1: Device summary** 

|**Order code**|**Marking**|**Package**|**Packing**|
|---|---|---|---|
|STD10NM60ND<br>STF10NM60ND<br>STP10NM60ND|10NM60ND|DPAK|Tape and reel|
|||TO-220FP|Tube|
|||TO-220||



November 2017 

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This is information on a product in full production. 

_www.st.com_ 

|**Contents**<br>**STD10NM60ND, STF10NM60ND, STP10NM60ND**|**Contents**<br>**STD10NM60ND, STF10NM60ND, STP10NM60ND**|
|---|---|
|**Contents**||
|**1**|**Electrical ratings ............................................................................. 3**|
|**2**|**Electrical characteristics ................................................................ 4**|
||2.1<br>Electrical characteristics (curves) ...................................................... 6|
|**3**|**Test circuits ..................................................................................... 9**|
|**4**|**Package information ..................................................................... 10**|
||4.1<br>DPAK (TO-252) type A package information................................... 10|
||4.2<br>DPAK (TO-252) type E package information................................... 12|
||4.3<br>TO-220FP package information ...................................................... 14|
||4.4<br>TO-220 package information ........................................................... 16|
||4.5<br>DPAK (TO-252) packing information ............................................... 18|
|**5**|**Revision history ............................................................................ 20**|



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**STD10NM60ND, STF10NM60ND, STP10NM60ND** 

**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2: Absolute maximum ratings** 

|||**Value**|**Value**|**Value**|**Unit**|
|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**DPAK**|**TO-220FP**|**TO-220**||
|VDS|Drain-source voltage|600|||V|
|VGS|Gate-source voltage|±25|||V|
|ID|Drain current (continuous) at TC= 25 °C|8|8_(1)_|8|A|
|ID|Drain current (continuous) at TC= 100 °C|5|5_(1)_|5|A|
|IDM_(2)_|Drain current (pulsed)|32|||A|
|PTOT|Total dissipation at TC= 25 °C|70|25|70|W|
|dv/dt_(3)_|Peak diode recoveryvoltage slope|40|||V/ns|
|VISO|Insulation withstand voltage (RMS) from all<br>three leads to external heat-sink<br>(t = 1 s; TC= 25 °C)|||2500|V|
|Tstg|Storage temperature range|- 55 to 150|||°C|
|Tj|Operating junction temperature range|||||



## **Notes:** 

- (1)Limited by maximum junction temperature. 

- (2)Pulse width limited by safe operating area. 

(3)ISD ≤ 8 A, di/dt ≤ 400 A/µs; VDS(peak) < V(BR)DSS, VDD = 80% V(BR)DSS. 

**Table 3: Thermal data** 

|**Symbol**|**Parameter**||**Value**|**Value**|**Unit**|
|---|---|---|---|---|---|
|||**DPAK**|**TO-220FP**|**TO-220**||
|Rthj-case|Thermal resistancejunction-case|1.79|5|1.79|°C/W|
|Rthj-pcb|Thermal resistance junction-pcb_(1)_|50|||°C/W|
|Rthj-amb|Thermal resistancejunction-ambient||62.5||°C/W|



## **Notes:** 

- (1)When mounted on 1 inch² FR-4, 2 Oz copper board. 

**Table 4: Avalanche characteristics** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|IAS_(1)_|Singlepulse avalanche current|2.5|A|
|EAS_(2)_|Singlepulse avalanche energy|130|mJ|



## **Notes:** 

- (1) Pulse width limited by Tjmax. 

(2) starting Tj = 25 °C, ID = IAS, VDD = 50 V. 

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**Electrical characteristics** 

## **2 Electrical characteristics** 

(Tcase = 25 °C unless otherwise specified) 

**Table 5: Static** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source breakdown<br>voltage|VGS= 0 V, ID= 1 mA|600|||V|
|IDSS|Zero gate voltage drain<br>current|VGS= 0 V, VDS= 600 V|||1|µA|
|||VGS= 0 V, VDS= 600 V,<br>TC= 125 °C_(1)_|||100||
|IGSS|Gate-body leakage<br>current|VDS= 0 V, VGS= ±25 V|||±100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250µA|3|4|5|V|
|RDS(on)|Static drain-source<br>on-resistance|VGS= 10 V, ID= 4 A||0.57|0.60|Ω|



## **Notes:** 

(1)Defined by design, not subject to production test. 

**Table 6: Dynamic** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Ciss|Input capacitance|VDS= 50 V, f = 1 MHz, VGS= 0 V|-|577|-|pF|
|Coss|Output capacitance||-|32.4|-||
|Crss|Reverse transfer<br>capacitance||-|1.76|-||
|Coss eq._(1)_|Equivalent output<br>capacitance|VDS= 0 to 480 V, VGS= 0 V|-|138|-|pF|
|RG|Intrinsicgate resistance|f = 1 MHz, ID=0 A|-|6|-|Ω|
|Qg|Totalgate charge|VDD= 480 V, ID= 8 A,<br>VGS= 0 to 10 V<br>(see_Figure 19: "Test circuit for_<br>_gate charge behavior"_)|-|20|-|nC|
|Qgs|Gate-source charge||-|4.3|-||
|Qgd|Gate-drain charge||-|11.6|-||



## **Notes:** 

(1)Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 

**Table 7: Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delaytime|VDD= 300 V, ID= 4 A,<br>RG= 4.7 Ω, VGS= 10 V (see<br>_Figure 18: "Test circuit for_<br>_resistive load switching times"_<br>and_Figure 23: "Switching time_<br>_waveform"_)|-|9.2|-|ns|
|tr|Rise time||-|10|-||
|td(off)|Turn-off delaytime||-|32|-||
|tf|Fall time||-|9.8|-||



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**STD10NM60ND, STF10NM60ND, STP10NM60ND** 

**Electrical characteristics** 

**Table 8: Source-drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD|Source-drain current||-||8|A|
|ISDM_(1)_|Source-drain current<br>(pulsed)||-||32|A|
|VSD_(2)_|Forward on voltage|VGS= 0 V, ISD= 8 A|-||1.5|V|
|trr|Reverse recoverytime|ISD= 8 A, di/dt = 100 A/µs,<br>VDD= 60 V<br>(see_Figure 20: "Test circuit for_<br>_inductive load switching and_<br>_diode recovery times"_)|-|118||ns|
|Qrr|Reverse recoverycharge||-|680||nC|
|IRRM|Reverse recovery current||-|11||A|
|trr|Reverse recoverytime|ISD= 8 A, di/dt = 100 A/µs,<br>VDD= 60 V, Tj= 150 °C<br>(see_Figure 20: "Test circuit for_<br>_inductive load switching and_<br>_diode recovery times"_)|-|150||ns|
|Qrr|Reverse recoverycharge||-|918||nC|
|IRRM|Reverse recovery current||-|12||A|



## **Notes:** 

(1) Pulse width is limited by safe operating area. 

(2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%. 

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## **Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**Figure 2: Safe operating area for DPAK Figure 3: Thermal impedance for DPAK** 

**==> picture [189 x 161] intentionally omitted <==**

**==> picture [165 x 163] intentionally omitted <==**

**Figure 4: Safe operating area for TO-220FP** 

**==> picture [198 x 166] intentionally omitted <==**

**Figure 5: Thermal impedance for TO-220FP** 

**==> picture [167 x 164] intentionally omitted <==**

**Figure 6: Safe operating area for TO-220** 

**==> picture [194 x 156] intentionally omitted <==**

**Figure 7: Thermal impedance for TO-220** 

**==> picture [168 x 163] intentionally omitted <==**

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**Electrical characteristics** 

## **STD10NM60ND, STF10NM60ND, STP10NM60ND** 

**Figure 8: Output characteristics** 

**Figure 10: Gate charge vs gate-source voltage** 

**Figure 12: Capacitance variations** 

**==> picture [146 x 10] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 9: Transfer characteristics<br>**----- End of picture text -----**<br>


**==> picture [192 x 43] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 11: Static drain-source on-resistance<br>RDs(on)<br>W<br>0.60Ol | Vcs=10V aaa<br>**----- End of picture text -----**<br>


**Figure 13: Output capacitance stored energy** 

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**Electrical characteristics** 

**==> picture [208 x 19] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 14: Normalized gate threshold voltage vs<br>temperature<br>**----- End of picture text -----**<br>


**Figure 16: Normalized V(BR)DSS vs temperature** 

**Figure 15: Normalized on-resistance vs temperature** 

**Figure 17: Source-drain diode forward characteristics** 

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**Test circuits** 

## **3 Test circuits** 

**==> picture [416 x 561] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 18: Test circuit for resistive load  Figure 19: Test circuit for gate charge<br>switching times  behavior<br>Figure 20: Test circuit for inductive load  Figure 21: Unclamped inductive load test<br>switching and diode recovery times  circuit<br>Figure 22: Unclamped inductive waveform  Figure 23: Switching time waveform<br>**----- End of picture text -----**<br>


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**Package information** 

## **4 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _**www.st.com**_ . ECOPACK[®] is an ST trademark. 

## **4.1 DPAK (TO-252) type A package information** 

**Figure 24: DPAK (TO-252) type A package outline** 

**==> picture [408 x 315] intentionally omitted <==**

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**Package information** 

**Table 9: DPAK (TO-252) type A mechanical data** 

|**Dim.**||**mm**||
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|2.20||2.40|
|A1|0.90||1.10|
|A2|0.03||0.23|
|b|0.64||0.90|
|b4|5.20||5.40|
|c|0.45||0.60|
|c2|0.48||0.60|
|D|6.00||6.20|
|D1|4.95|5.10|5.25|
|E|6.40||6.60|
|E1|4.60|4.70|4.80|
|e|2.16|2.28|2.40|
|e1|4.40||4.60|
|H|9.35||10.10|
|L|1.00||1.50|
|(L1)|2.60|2.80|3.00|
|L2|0.65|0.80|0.95|
|L4|0.60||1.00|
|R||0.20||
|V2|0°||8°|



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**Package information** 

## **4.2 DPAK (TO-252) type E package information** 

**Figure 25: DPAK (TO-252) type E package outline** 

**==> picture [407 x 552] intentionally omitted <==**

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**Package information** 

**Table 10: DPAK (TO-252) type E mechanical data** 

|**Dim.**||**mm**||
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|2.18||2.39|
|A2|||0.13|
|b|0.65||0.884|
|b4|4.95||5.46|
|c|0.46||0.61|
|c2|0.46||0.60|
|D|5.97||6.22|
|D1|5.21|||
|E|6.35||6.73|
|E1|4.32|||
|e||2.286||
|e1||4.572||
|H|9.94||10.34|
|L|1.50||1.78|
|L1||2.74||
|L2|0.89||1.27|
|L4|||1.02|



**Figure 26: DPAK (TO-252) recommended footprint (dimensions are in mm)** 

**==> picture [407 x 274] intentionally omitted <==**

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## **Package information** 

## **4.3 TO-220FP package information** 

**Figure 27: TO-220FP package outline** 

**==> picture [406 x 574] intentionally omitted <==**

**----- Start of picture text -----**<br>
7012510_Rev_12_B<br>**----- End of picture text -----**<br>


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**Package information** 

**Table 11: TO-220FP package mechanical data** 

|**Dim.**||**mm**||
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.4||4.6|
|B|2.5||2.7|
|D|2.5||2.75|
|E|0.45||0.7|
|F|0.75||1|
|F1|1.15||1.70|
|F2|1.15||1.70|
|G|4.95||5.2|
|G1|2.4||2.7|
|H|10||10.4|
|L2||16||
|L3|28.6||30.6|
|L4|9.8||10.6|
|L5|2.9||3.6|
|L6|15.9||16.4|
|L7|9||9.3|
|Dia|3||3.2|



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**Package information** 

## **4.4 TO-220 package information** 

**Figure 28: TO-220 type A package outline** 

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**Package information** 

## **STD10NM60ND, STF10NM60ND, STP10NM60ND** 

**Table 12: TO-220 type A package mechanical data** 

|**Dim.**||**mm**||
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|b|0.61||0.88|
|b1|1.14||1.55|
|c|0.48||0.70|
|D|15.25||15.75|
|D1||1.27||
|E|10.00||10.40|
|e|2.40||2.70|
|e1|4.95||5.15|
|F|1.23||1.32|
|H1|6.20||6.60|
|J1|2.40||2.72|
|L|13.00||14.00|
|L1|3.50||3.93|
|L20||16.40||
|L30||28.90||
|øP|3.75||3.85|
|Q|2.65||2.95|



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## **Package information** 

## **4.5 DPAK (TO-252) packing information** 

**Figure 29: DPAK (TO-252) tape outline** 

~~©~~ 18/21 DocID18467 Rev 3 

**STD10NM60ND, STF10NM60ND, STP10NM60ND** 

**Package information** 

## **Figure 30: DPAK (TO-252) reel outline** 

**Table 13: DPAK (TO-252) tape and reel mechanical data** 

|**Tape**|**Tape**|**Tape**|**Reel**|**Reel**|**Reel**|
|---|---|---|---|---|---|
|**Dim.**|**mm**||**Dim.**|**mm**||
||**Min.**|**Max.**||**Min.**|**Max.**|
|A0|6.8|7|A||330|
|B0|10.4|10.6|B|1.5||
|B1||12.1|C|12.8|13.2|
|D|1.5|1.6|D|20.2||
|D1|1.5||G|16.4|18.4|
|E|1.65|1.85|N|50||
|F|7.4|7.6|T||22.4|
|K0|2.55|2.75||||
|P0|3.9|4.1|Baseqty.||2500|
|P1|7.9|8.1|Bulkqty.||2500|
|P2|1.9|2.1||||
|R|40|||||
|T|0.25|0.35||||
|W|15.7|16.3||||



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**STD10NM60ND, STF10NM60ND, STP10NM60ND** 

**Revision history** 

## **5 Revision history** 

**Table 14: Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|10-Feb-2011|1|First release.|
|17-Nov-2011|2|Updated features in table and description in cover page.<br>Updated_Table 2: Absolute maximum ratings_,_Table 5: On /off states,_<br>_Table 15: Normalized on resistance vs temperature_,_Figure 17:_<br>_Normalized VDS vs temperature_and_Section 4: Package mechanical_<br>_data._|
|03-Nov-2017|3|Modified_Table 3: "Thermal data"_.<br>Modified_Section 4: "Package information"_.<br>Minor text changes.|



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## **STD10NM60ND, STF10NM60ND, STP10NM60ND** 

## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

- © 2017 STMicroelectronics – All rights reserved 

DocID18467 Rev 3 

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## Links

- [View this product on Novapart](https://novapart.co/products/STD10NM60ND/power-mosfet-n-channel-600-v-8-a-057-ohm-to-252)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/std10nm60nd/mosfet-n-ch-600v-8a-dpak/dp/2098152)
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