# Power MOSFET, N Channel, 300 V, 10 A, 0.33 ohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:4036291RL/)

**URL**: https://novapart.co/products/STD10NF30/power-mosfet-n-channel-300-v-10-a-033-ohm-to-252
**SKU**: STD10NF30
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.5370
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | MESH OVERLAY Series |
| Qualification | AEC-Q101 |
| Power Dissipation | 103W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 300V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 10A |
| Drain Source On State Resistance | 0.33ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4036291RL/)

## **STD10NF30** 

Automotive-grade N-channel 300 V, 10 A, 0.28 Ω typ., MESH OVERLAY™ Power MOSFET in a DPAK package 

**Datasheet** - **production data** 

## **Features** 

**==> picture [68 x 60] intentionally omitted <==**

**----- Start of picture text -----**<br>
TAB<br>3<br>1<br>DPAK<br>**----- End of picture text -----**<br>


|**Features**||||
|---|---|---|---|
|**Order code**|**VDS**|**RDS(on)max.**|**ID**|
|STD10NF30|300 V|0.33Ω|10 A|



- Designed for automotive applications and AEC-Q101 qualified 

- Gate charge minimized 

- Very low intrinsic capacitances 

## **Applications** 

- Switching applications 

## **Figure 1.  Internal schematic diagram** 

## **Description** 

This Power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers. 

**Table 1. Device summary** 

|**Order code**|**Marking**|**Packages**|**Packaging**|
|---|---|---|---|
|STD10NF30|10NF30|DPAK|Tape and reel|



_www.st.com_ 

March 2014 

DocID026136 Rev 1 

1/16 

This is information on a product in full production. 

**Contents** 

**STD10NF30** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves)         . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
|**5**|**Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13**|
|**6**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15**|



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**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2. Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VDS|Drain-source voltage|300|V|
|VGS|Gate-source voltage|± 20|V|
|ID|Drain current (continuous) at TC= 25 °C|10|A|
|ID|Drain current (continuous) at TC= 100 °C|6.3|A|
|IDM<br>(1)|Drain current (pulsed)|40|A|
|PTOT|Total dissipation at TC= 25 °C|103|W|
|dv/dt(2)|Peak diode recovery voltage slope|12|V/ns|
|Tstg|Storage temperature|- 55 to 175|°C|
|Tj|Max. operating junction temperature||°C|



1. Pulse width limited by safe operating area 

2. ISD ≤   10 A, di/dt   ≤   200 A/μs, VDD= 80% V(BR)DSS 

**Table 3. Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|Rthj-case|Thermal resistance junction-case max|1.45|°C/W|
|Rthj-pcb<br>(1)|Thermal resistance junction-pcb max|50|°C/W|



1. When mounted on 1 inch² FR-4, 2 Oz copper board 

**Table 4. Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|IAR|Avalanche current, repetitive or not-<br>repetitive (pulse width limited by Tjmax)|6|A|
|EAS|Single pulse avalanche energy<br>(starting Tj= 25°C, ID= IAR, VDD= 50 V)|175|mJ|



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**STD10NF30** 

**Electrical characteristics** 

## **2 Electrical characteristics** 

(TC = 25 °C unless otherwise specified). 

**Table 5. On /off states** 

|||**Table 5. On /off states**|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|V(BR)DSS|Drain-source<br>breakdown voltage<br>(VGS= 0)|ID= 1 mA|300|||V|
|IDSS|Zero gate voltage<br>drain current (VGS= 0)|VDS= 300 V|||1|μA|
|||VDS= 300 V, TC=125 °C|||10|μA|
|IGSS|Gate-body leakage<br>current (VDS= 0)|VGS= ± 20 V|||±100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 μA|2|3|4|V|
|RDS(on)|Static drain-source<br>on-resistance|VGS= 10 V, ID= 5 A||0.28|0.33|Ω|



**Table 6. Dynamic** 

|||**Table 6. Dynamic**|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|Ciss|Input capacitance|VDS= 25 V, f = 1 MHz,<br>VGS= 0|-|780|-|pF|
|Coss|Output capacitance||-|110|-|pF|
|Crss|Reverse transfer<br>capacitance||-|15|-|pF|
|Qg|Total gate charge|VDD= 240 V, ID= 10 A,<br>VGS= 10 V<br>(see_Figure 14_)|-|23|-|nC|
|Qgs|Gate-source charge||-|3.5|-|nC|
|Qgd|Gate-drain charge||-|11.3|-|nC|



**Table 7. Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delay time|VDD= 150 V, ID= 5 A,<br>RG= 4.7Ω,VGS= 10 V<br>(see_Figure 13_)|-|13.5|-|ns|
|tr|Rise time||-|9.5|-|ns|
|td(off)|Turn-off-delay time||-|32|-|ns|
|tf|Fall time||-|9.5|-|ns|



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**Electrical characteristics** 

**Table 8. Source drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD|Source-drain current||-||10|A|
|ISDM (1)|Source-drain current (pulsed)||-||40|A|
|VSD (2)|Forward on voltage|ISD= 10 A, VGS= 0|-||1.5|V|
|trr|Reverse recovery time|ISD= 10 A, di/dt = 100 A/μs<br>VDD= 60 V (see_Figure 18_)|-|145||ns|
|Qrr|Reverse recovery charge||-|0.76||μC|
|IRRM|Reverse recovery current||-|10.3||A|
|trr|Reverse recovery time|ISD= 10 A, di/dt = 100 A/μs<br>VDD= 60 V, Tj= 150 °C<br>(see_Figure 18_)|-|174||ns|
|Qrr|Reverse recovery charge||-|1.08||μC|
|IRRM|Reverse recovery current||-|12.5||A|



1. Pulse width limited by safe operating area 

2. Pulsed: pulse duration = 300 μs, duty cycle 1.5% 

DocID026136 Rev 1 

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**STD10NF30** 

**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**Figure 2. Safe operating area** 

**Figure 3. Thermal impedance** 

**==> picture [204 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
ID AM18166v1<br>(A)<br>100<br>10µs<br>\, NC!<br>10 sS\ 100µs<br>\N,<br>NOON,<br>FIs es,<br>NON, ‘NYN NS 1ms<br>1<br>Tj=175 ° C 10ms<br>Tc=25°C<br>Single pulse<br>0.1<br>0.1 1 10 100 VDS(V)<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>**----- End of picture text -----**<br>


**Figure 4. Output characteristics** 

## **Figure 5. Transfer characteristics** 

**Figure 6. Gate charge vs gate-source voltage** 

## **Figure 7. Static drain-source on-resistance** 

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**Electrical characteristics** 

**Figure 8. Capacitance variations** 

**Figure 10. Normalized on-resistance vs temperature** 

## **Figure 9. Normalized gate threshold voltage vs temperature** 

**Figure 11. Normalized V(BR)DSS vs temperature** 

**Figure 12. Source-drain diode forward characteristics** 

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**STD10NF30** 

**Test circuits** 

## **3 Test circuits** 

**Figure 13. Switching times test circuit for resistive load** 

**Figure 14. Gate charge test circuit** 

**==> picture [462 x 162] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDD<br>12V 47kΩ<br>1kΩ<br>100nF<br>RL 2200 3.3<br>μF μF<br>VDD IG=CONST<br>VD Vi=20V=VGMAX 100Ω D.U.T.<br>VGS<br>2200<br>RG D.U.T. μF 2.7kΩ VG<br>PW<br>47kΩ<br>1kΩ<br>PW<br>AM01468v1 AM01469v1<br>**----- End of picture text -----**<br>


**Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test circuit switching and diode recovery times** 

**==> picture [462 x 346] intentionally omitted <==**

**----- Start of picture text -----**<br>
L<br>A A A<br>D<br>FAST L=100μH VD<br>G D.U.T. DIODE 2200 3.3<br>S B 3.3 1000 μF μF VDD<br>25 Ω B B D μF μF VDD ID<br>G<br>RG S<br>Vi D.U.T.<br>Pw<br>AM01470v1 AM01471v1<br>Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform<br>V(BR)DSS ton toff<br>VD tdon tr tdoff tf<br>90% 90%<br>IDM<br>10%<br>ID 0 10% VDS<br>VDD VDD 90%<br>VGS<br>AM01472v1 0 10% AM01473v1<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com_ . ECOPACK[®] is an ST trademark. 

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**STD10NF30** 

**Package mechanical data** 

## **Figure 19. DPAK (TO-252) drawing** 

**==> picture [405 x 575] intentionally omitted <==**

**----- Start of picture text -----**<br>
0068772_K_type_A<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

**Table 9. DPAK (TO-252) mechanical data** 

||**Table 9. DPAK(TO-252) mechanical data**|**Table 9. DPAK(TO-252) mechanical data**|**Table 9. DPAK(TO-252) mechanical data**|
|---|---|---|---|
|**Dim.**|**mm**|||
||**Min.**|**Typ.**|**Max.**|
|A|2.20||2.40|
|A1|0.90||1.10|
|A2|0.03||0.23|
|b|0.64||0.90|
|b4|5.20||5.40|
|c|0.45||0.60|
|c2|0.48||0.60|
|D|6.00||6.20|
|D1||5.10||
|E|6.40||6.60|
|E1||4.70||
|e||2.28||
|e1|4.40||4.60|
|H|9.35||10.10|
|L|1.00||1.50|
|(L1)||2.80||
|L2||0.80||
|L4|0.60||1.00|
|R||0.20||
|V2|0°||8°|



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**STD10NF30** 

**Package mechanical data** 

## **Figure 20. DPAK footprint[(a)]** 

**==> picture [405 x 348] intentionally omitted <==**

**----- Start of picture text -----**<br>
Footprint_REV_K<br>**----- End of picture text -----**<br>


- a. All dimensions are in millimeters. 

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**Packaging mechanical data** 

## **5 Packaging mechanical data** 

## **Figure 21. Tape for DPAK (TO-252)** 

**==> picture [399 x 316] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 pitches cumulative<br>tolerance on tape +/- 0.2 mm<br>Top cover P0 D P2<br>T tape<br>E<br>F<br>K0 W<br>B1 B0<br>A) | Tl IRIE Co<br>For machine ref. only A0 P1 D1<br>including draft and<br>radii concentric around B0 SS»<br>User direction of feed<br>R<br>ol eh tel al fa l ta a<br>|» Bending radius<br>User direction of feed<br>AM08852v1<br>**----- End of picture text -----**<br>


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**Packaging mechanical data** 

## **Figure 22. Reel for DPAK (TO-252)** 

**==> picture [405 x 256] intentionally omitted <==**

**----- Start of picture text -----**<br>
T<br>REEL DIMENSIONS<br>40mm min.<br>Access hole<br>At slot location<br>B<br>D<br>C<br>N<br>A<br>Full radius Tape slot  G measured at hub<br>in core for<br>tape start 25 mm min.<br>width<br>AM08851v2<br>**----- End of picture text -----**<br>


**Table 10. DPAK (TO-252) tape and reel mechanical data** 

||**Tape**|**Tape**||**Reel**|**Reel**|
|---|---|---|---|---|---|
|**Dim.**|**mm**<br>**Min.**<br>**Max.**||**Dim.**|**mm**||
||**Min.**|||**Min.**|**Max.**|
|A0|6.8|7|A||330|
|B0|10.4|10.6|B|1.5||
|B1||12.1|C|12.8|13.2|
|D|1.5|1.6|D|20.2||
|D1|1.5||G|16.4|18.4|
|E|1.65|1.85|N|50||
|F|7.4|7.6|T||22.4|
|K0|2.55|2.75||||
|P0|3.9|4.1||Base qty.|2500|
|P1|7.9|8.1||Bulk qty.|2500|
|P2|1.9|2.1<br>0.35<br>16.3||||
|R|40|||||
|T|0.25|||||
|W|15.7|||||



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**Revision history** 

## **6 Revision history** 

**Table 11. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|27-Mar-2014|1|Initial release.|



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## Links

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- [Supplier page](https://es.farnell.com/stmicroelectronics/std10nf30/mosfet-n-ch-300v-10a-to-252/dp/4036291RL)
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