# Power MOSFET, N Channel, 30 V, 80 A, 4500 µohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:4036289RL/)

**URL**: https://novapart.co/products/STD100N3LF3/power-mosfet-n-channel-30-v-80-a-4500-ohm-to-252
**SKU**: STD100N3LF3
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.9480
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Available until stocks are exhausted Alternative available

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (17-Dec-2015) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | STripFET II Series |
| Qualification | - |
| Power Dissipation | 110W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 80A |
| Drain Source On State Resistance | 4500µohm |
| Gate Source Threshold Voltage Max | 2.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4036289RL/)

**==> picture [61 x 39] intentionally omitted <==**

## **STD100N3LF3** N-channel 30 V, 0.0045 Ω, 80 A, DPAK planar STripFET™ II Power MOSFET 

## **Features** 

|**Features**|||||
|---|---|---|---|---|
|**Type**|**VDSSS**|**RDS(on)**|**ID**|**Pw**|
|STD100N3LF3|30 V|<0.0055Ω|80 A(1)|110 W|



1. Current limited by package 

- 100% avalanche tested 

**==> picture [56 x 73] intentionally omitted <==**

**----- Start of picture text -----**<br>
3<br>1<br>DPAK<br>**----- End of picture text -----**<br>


- Logic level threshold 

## **Applications** 

- Switching application 

   - Automotive 

## **Description** 

This  STripFET™ II Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance providing superior switching performance. 

## **Figure 1. Internal schematic diagram** 

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## **Table 1. Device summary** 

|**Order codes**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STD100N3LF3|100N3LF3|DPAK|Tape and reel|



1/14 

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Doc ID 13206 Rev 3 

_www.st.com_ 

**Contents** 

**STD100N3LF3** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves)         . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10**|
|**5**|**Packaging mechanical data  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13**|
|**6**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14**|



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**STD100N3LF3** 

**Electrical ratings** 

## **1 Electrical ratings** 

## **Table 2. Absolute maximum ratings** 

|**Table 2.**|**Absolute maximum ratings**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|VDS|Drain-source voltage (VGS= 0)|30|V|
|VGS|Gate-source voltage|± 20|V|
|ID<br>(1)|Drain current (continuous) at TC= 25 °C|80|A|
|ID|Drain current (continuous) at TC=100 °C|70|A|
|IDM<br>(2)|Drain current (pulsed)|320|A|
|PTOT|Total dissipation at TC= 25 °C|110|W|
||Derating factor|0.73|W/°C|
|dv/dt(3)|Peak diode recovery voltage slope|3.9|V/ns|
|Tstg|Storage temperature|-55 to 175|°C|
|TJ|Max. operating junction temperature|||



1. Current limited by package. 

2. Pulse width limited by safe operating area 

3. ISD ≤ 80A, di/dt ≤ 360 A/µs, VDS ≤ V(BR)DSS, TJ ≤ TJMAX 

## **Table 3. Thermal data** 

|**Table 3.**|**Thermal data**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|RthJC|Thermal resistance junction-case max|1.36|°C/W|
|RthJA|Thermal resistance junction-ambient max|100|°C/W|
|Tl|Maximum lead temperature for soldering<br>purpose|275|°C|



## **Table 4. Avalanche characteristics** 

|**Table 4.**|**Avalanche characteristics**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|IAR|Not-repetitive avalanche current<br>(pulse width limited by TJmax)|40|A|
|EAS|Single pulsed avalanche energy<br>(starting TJ= 25 °C, ID= IAV,VDD= 24 V)|500|mJ|



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**STD100N3LF3** 

**Electrical characteristics** 

## **2 Electrical characteristics** 

(TCASE=25°C unless otherwise specified) 

## **Table 5. On/off states** 

|**Table 5.**|**On/off states**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|V(BR)DSS|Drain-source breakdown<br>voltage|ID= 250µA, VGS= 0|30|||V|
|IDSS|Zero gate voltage drain<br>current (VGS= 0)|VDS= Max rating,<br>VDS= Max rating @125 °C|||1<br>10|µA<br>µA|
|IGSS|Gate body leakage current<br>(VDS= 0)|VGS= ±20 V|||±200|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 µA|1||2.5|V|
|RDS(on)|Static drain-source on<br>resistance|VGS= 10 V, ID= 40 A<br>VGS= 5 V, ID= 20 A||0.0045<br>0.008|0.0055<br>0.01|Ω<br>Ω|
|||VGS= 10 V,<br>ID= 40 A @125 °C<br>VGS= 5 V,<br>ID= 20 A @125 °C||0.0068<br>0.0146||Ω<br>Ω|



## **Table 6. Dynamic** 

|**Table 6.**|**Dynamic**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|gfs<br>(1)|Forward transconductance|VDS= 10 V,ID= 15 A|-|31||S|
|Ciss<br>Coss<br>Crss|Input capacitance<br>Output capacitance<br>Reverse transfer<br>capacitance|VDS= 25 V, f = 1 MHz,<br>VGS= 0|-|2060<br>728<br>67||pF<br>pF<br>pF|
|Qg<br>Qgs<br>Qgd|Total gate charge<br>Gate-source charge<br>Gate-drain charge|VDD= 24 V, ID= 80 A<br>VGS= 5 V<br>_Figure 16 on page 9_|-|20<br>7<br>7.5|27|nC<br>nC<br>nC|
|RG|Gate input resistance|f = 1 MHz gate DC Bias = 0<br>test signal level = 20 mV<br>open drain|-|1.9||Ω|



1. Pulsed: pulse duration=300µs, duty cycle 1.5% 

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**STD100N3LF3** 

**Electrical characteristics** 

## **Table 7. Switching times** 

|**Table 7.**|**Switching times**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|td(on)<br>tr<br>td(off)<br>tf|Turn-on delay time<br>Rise time<br>Turn-off delay time<br>Fall time|VDD= 15 V, ID= 40 A,<br>RG=4.7Ω,VGS=10 V<br>_Figure 15 on page 9_|-|9<br>205<br>31<br>35|-|ns<br>ns<br>ns<br>ns|



## **Table 8. Source drain diode** 

|**Table 8.**|**Source drain diode**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min**|**Typ.**|**Max**|**Unit**|
|ISD|Source-drain current||-||80|A|
|ISDM<br>(1)|Source-drain current (pulsed)||-||320|A|
|VSD<br>(2)|Forward on voltage|ISD= 40 A, VGS= 0|-||1.3|V|
|trr<br>Qrr<br>IRRM|Reverse recovery time<br>Reverse recovery charge<br>Reverse recovery current|ISD= 80 A,<br>di/dt = 100 A/µs,<br>VDD= 25 V, TJ= 150 °C<br>_Figure 17 on page 9_|-|40<br>40<br>2||ns<br>µC<br>A|



1. Pulse width limited by safe operating area 

2. Pulsed: pulse duration=300µs, duty cycle 1.5% 

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**STD100N3LF3** 

**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**Figure 2. Safe operating area** 

**Figure 3. Thermal impedance** 

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**Figure 4. Output characteristics** 

**Figure 5. Transfer characteristics** 

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**Figure 6. Transconductance** 

**Figure 7. Static drain-source on resistance** 

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**STD100N3LF3** 

**Electrical characteristics** 

## **Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations** 

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**Figure 10. Normalized gate threshold voltage Figure 11. Normalized BVDSS vs temperature vs temperature** 

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## **Figure 12. Normalized on resistance vs temperature** 

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## **Figure 13. Source-drain diode forward characteristics** 

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**STD100N3LF3** 

**Electrical characteristics** 

## **Figure 14. Allowable Iav vs time in avalanche** 

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The previous curve gives the single pulse safe operating area for unclamped inductive loads, under the following conditions: 

PD(AVE) = 0.5 * (1.3 * BVDSS *IAV) 

EAS(AR) = PD(AVE) * tAV 

Where: 

IAV is the allowable current in avalanche 

PD(AVE) is the average power dissipation in avalanche (single pulse) 

tAV is the time in avalanche 

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**STD100N3LF3** 

**Test circuits** 

## **3 Test circuits** 

**Figure 15. Switching times test circuit for Figure 16. Gate charge test circuit resistive load** 

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## **Figure 17. Test circuit for inductive load switching and diode recovery times** 

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**STD100N3LF3** 

**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 

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**STD100N3LF3** 

**Package mechanical data** 

||||**TO-252 (DPAK) mechanical data**|**TO-252 (DPAK) mechanical data**|**TO-252 (DPAK) mechanical data**|**TO-252 (DPAK) mechanical data**|**TO-252 (DPAK) mechanical data**|**TO-252 (DPAK) mechanical data**|**TO-252 (DPAK) mechanical data**|**TO-252 (DPAK) mechanical data**|**TO-252 (DPAK) mechanical data**|
|---|---|---|---|---|---|---|---|---|---|---|---|
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|**DIM.**||||||**mm.**||||||
||||**min.**|||**typ**|||||**max.**|
|A|||2.20||||||||2.40|
|A1|||0.90||||||||1.10|
|A2|||0.03||||||||0.23|
|b|||0.64||||||||0.90|
|b4|||5.20||||||||5.40|
|c|||0.45||||||||0.60|
|c2|||0.48||||||||0.60|
|D|||6.00||||||||6.20|
|D1||||||5.10||||||
|E|||6.40||||||||6.60|
|E1||||||4.70||||||
|e||||||2.28||||||
|e1|||4.40||||||||4.60|
|H|||9.35||||||||10.10|
|L|||1|||||||||
|L1||||||2.80||||||
|L2||||||0.80||||||
|L4|||0.60||||||||1|
|R||||||0.20||||||
|||||o|||||||~~8 ~~o|
|~~V~~|||~~0~~|||||||||
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**STD100N3LF3** 

**Packaging mechanical data** 

## **5 Packaging mechanical data** 

## **DPAK FOOTPRINT** 

**==> picture [143 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
All dimensions are in millimeters<br>**----- End of picture text -----**<br>


## **TAPE AND REEL SHIPMENT** 

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**----- Start of picture text -----**<br>
REEL MECHANICAL DATA<br>mm inch<br>at slot location DIM.<br>MIN. MAX. MIN. MAX.<br>A 330 12.992<br>B 1.5 0.059<br>C 12.8 13.2 0.504 0.520<br>| f \S / t | GD 20.216.4 18.4 0.6450.795 0.724<br>in core for at hub N 50 1.968<br>tape start<br>| Full radius: \ / Tape slot - G measured T 22.4 0.881<br>BASE QTY BULK QTY<br>TAPE MECHANICAL DATA<br>2500 2500<br>mm inch<br>DIM. — [/_>—— |}<br>MIN. MAX. MIN. MAX.<br>A0 6.8 7 0.267 0.275<br>a B0 10.4 10.6 0.409 0.417 Bier Mt<br>B1 12.1 0.476<br>D 1.5 1.6 0.059 0.063<br>ee me Child tt<br>D1 1.5 0.059<br>es E 1.65 1.85 0.065 0.073 | CRETETs<br>F 7.4 7.6 0.291 0.299<br>K0 2.55 2.75 0.100 0.108 ol Peed”<br>pp “comer Liew: heaton<br>P0 3.9 4.1 0.153 0.161<br>ee SSSSSSSSSTRL<br>P1 7.9 8.1 0.311 0.319<br>P2 1.9 2.1 0.075 0.082<br>P| R 40 ET 1.574<br>rf W 15.7 16.3 0.618 0.641 FEED DIRECTION Bending radius<br>**----- End of picture text -----**<br>


~~>~~ 12/14 Doc ID 13206 Rev 3 ~~_L~~ 

**STD100N3LF3** 

**Revision history** 

## **6 Revision history** 

## **Table 9. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|07-Feb-2006|1|Initial release.|
|07-May-2009|2|Added VGS(th)max value in_Table 5: On/off states_|
|09-Nov-2009|3|Added VGSparameter in_Table 2: Absolute maximum ratings_|



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Doc ID 13206 Rev 3 



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