# Power MOSFET, N Channel, 800 V, 2.6 A, 1.5 ohm, TO-263 (D2PAK), Surface Mount

![Product image](https://novapart.co/image/farnell:1752012/)

**URL**: https://novapart.co/products/STB7NK80ZT4/power-mosfet-n-channel-800-v-26-a-15-ohm-to-263
**SKU**: STB7NK80ZT4
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.2100
**Stock**: 500+
**Lead Time**: 99 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:2.6A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Po

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 125W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-263 (D2PAK) |
| Drain Source Voltage Vds | 800V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 2.6A |
| Drain Source On State Resistance | 1.5ohm |
| Gate Source Threshold Voltage Max | 3.75V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1752012/)

N-channel 800 V, 1.5 Ω , 5.2 A, TO-220,TO-220FP,D[2] PAK,I[2] PAK Zener-protected SuperMESH™ Power MOSFET 

## **STB7NK80Z, STB7NK80Z-1 STP7NK80ZFP, STP7NK80Z** 

|**Features**<br>■<br>Extremely high dv/dt capability<br>■<br>100% avalanche tested<br>**Type**<br>**VDSS**<br>**(@Tjmax)**<br>**RDS(on)**<br>**ID**<br>STP7NK80Z<br>800V<br>< 1.8Ω<br>5.2A<br>STP7NK80ZFP<br>800V<br>< 1.8Ω<br>5.2A<br>STB7NK80Z<br>800V<br>< 1.8Ω<br>5.2A<br>STB7NK80Z-1<br>800V<br>< 1.8Ω<br>5.2A<br>~~===: ~~||**TO-220**<br>1<br>2<br>1<br>3<br>**TO-220FP**<br>1 2 3<br> bah|3|
|---|---|---|---|
|■<br>Gate charge minimized||**I2PAK**<br>**D2PAK**||



- Very low intrinsic capacitances 

- Very good manufacturing repeatability 

## **Applications** 

- Switching application 

## **Description** 

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage Power MOSFETs including revolutionary MDmesh™ products. 

## **Figure 1. Internal schematic diagram** 

**==> picture [173 x 159] intentionally omitted <==**

**----- Start of picture text -----**<br>
D(2)<br>G(1)<br>S(3)<br>AM01476v1<br>**----- End of picture text -----**<br>


**Table 1. Device summary** 

|**Order codes**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STB7NK80ZT4|B7NK80Z|D²PAK|Tape e reel|
|STB7NK80Z-1|B7NK80Z|I²PAK|Tube|
|STP7NK80Z|P7NK80Z|TO-220||
|STP7NK80ZFP|P7NK80ZFP|TO-220FP||



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Doc ID 8979 Rev 6 

_www.st.com_ 

**Contents** 

**STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves)       . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10**|
|**5**|**Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15**|
|**6**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16**|



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**Electrical ratings** 

## **1 Electrical ratings** 

## **Table 2. Absolute maximum ratings** 

|**Table 2.**|**Absolute maximum ratings**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Value**||||**Unit**|
|||**TO-220**|**D2PAK**|**I2PAK**|**TO-220FP**||
|VDS|Drain-source voltage (VGS= 0)|800||||V|
|VGS|Gate- source voltage|± 30||||V|
|ID|Drain current (continuous) at TC= 25 °C|5.2|||5.2(1)|A|
|ID|Drain current (continuous) at TC= 100 °C|3.3|||3.3(1)|A|
|IDM<br>(2)|Drain current (pulsed)|20.8|||20.8(1)|A|
|PTOT|Total dissipation at TC= 25°C|125|||30|W|
||Derating factor|1|||0.24|W/°C|
|VESD(G-S)|Gate source ESD<br>(HBM-C=100 pF, R=1.5 kΩ)|4000||||V|
|dv/dt<br>(3)|Peak diode recovery voltage slope|4.5||||V/ns|
|VISO|Insulation withstand voltage (RMS) from<br>all three leads to external heat sink<br>(t=1 s; TC= 25 °C)||||2500|V|
|Tj<br>Tstg|Max operating junction temperature<br>Storage temperature|-55 to 150||||°C<br>°C|



1. Limited only by maximum temperature allowed 

2. Pulse width limited by safe operating area 

3. ISD ≤ 5.2 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. 

## **Table 3. Thermal data** 

|**Table 3.**|**Thermal data**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Value**||||**Unit**|
|||**TO-220 **|**D2PAK**|**I2PAK**|**TO-220FP**||
|Rthj-case|Thermal resistance junction-case max|1|||4.2|°C/W|
|Rthj-amb|Thermal resistance junction-ambient max|62.5||||°C/W|
|Tl|Maximum lead temperature for soldering<br>purpose|300||||°C|



## **Table 4. Avalanche characteristics** 

|**Table 4.**|**Avalanche characteristics**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|IAR|Avalanche current, repetitive or not-repetitive<br>(pulse width limited by Tj Max)|5.2|A|
|EAS|Single pulse avalanche energy<br>(starting TJ= 25 °C, ID= IAR, VDD= 50 V)|210|mJ|



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**Electrical characteristics** 

## **2 Electrical characteristics** 

(TCASE = 25 °C unless otherwise specified) 

## **Table 5. On/off states** 

|**Table 5.**|**On/off states**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|V(BR)DSS|Drain-source<br>Breakdown voltage|ID=1 mA, VGS= 0|800|||V|
|IDSS|Zero gate voltage<br>Drain Current (VGS= 0)|VDS= Max rating<br>VDS= Max rating, TC= 125 °C|||1<br>50|µA<br>µA|
|IGSS|Gate-body leakage<br>Current (VDS= 0)|VGS= ± 20 V|||± 10|µA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 100 µA|3|3.75|4.5|V|
|RDS(on)|Static drain-source on<br>resistance|VGS= 10 V, ID= 2.6 A||1.5|1.8|Ω|



## **Table 6. Dynamic** 

|**Table 6.**|**Dynamic**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|gfs<br>(1)|Forward transconductance|VDS= 15 V, ID= 2.6 A|-|5||S|
|Ciss<br>Coss<br>Crss|Input capacitance<br>Output capacitance<br>Reverse transfer<br>capacitance|VDS= 25 V, f = 1 MHz,<br>VGS= 0|-|1138<br>122<br>25||pF<br>pF<br>pF|
|Coss eq.<br>(2)|Equivalent output<br>capacitance|VDS=0 , VDS= 0 to 640 V|-|50||pF|
|td(on)<br>tr<br>tr(off)<br>tr|Turn-on delay time<br>Rise time<br>Turn-off delay time<br>Fall time|VDD= 400 V, ID= 2.6 A,<br>RG= 4.7Ω,VGS= 10 V<br>(see_Figure 17_)|-|20<br>12<br>45<br>20||ns<br>ns<br>ns<br>ns|
|Qg<br>Qgs<br>Qgd|Total gate charge<br>Gate-source charge<br>Gate-drain charge|VDD= 640 V, ID= 5.2 A,<br>VGS= 10 V<br>(see_Figure 18_)|-|40<br>7<br>21|56|nC<br>nC<br>nC|
|tr(Voff)<br>tr<br>tc|Off-voltage rise time<br>Fall time<br>Cross-over time|VDD= 640 V, ID= 5.2 A,<br>RG= 4.7Ω,VGS= 10 V<br>(see_Figure 17_)|-|12<br>10<br>20||ns<br>ns<br>ns|



1. Pulsed: pulse duration=300µs, duty cycle 1.5% 

2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 

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**Electrical characteristics** 

## **Table 7. Source drain diode** 

|**Table 7.**|**Source drain diode**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|ISD<br>ISDM<br>(1)|Source-drain current<br>Source-drain current (pulsed)||-||5.2<br>20.8|A<br>A|
|VSD<br>(2)|Forward on voltage|ISD= 5.2 A, VGS= 0|-||1.6|V|
|trr<br>Qrr<br>IRRM|Reverse recovery time<br>Reverse recovery charge<br>Reverse recovery current|ISD= 5.2 A, di/dt = 100<br>A/µs<br>VDD= 50 V, Tj = 150°C<br>(see_Figure 22_)|-|530<br>3.31<br>12.5||ns<br>µC<br>A|



1. Pulsed: pulse duration=300µs, duty cycle 1.5% 

2. Pulse width limited by safe operating area 

|**Table 8.**<br>**Gate-source zener diode**|**Table 8.**<br>**Gate-source zener diode**|**Table 8.**<br>**Gate-source zener diode**|**Table 8.**<br>**Gate-source zener diode**|**Table 8.**<br>**Gate-source zener diode**|**Table 8.**<br>**Gate-source zener diode**|**Table 8.**<br>**Gate-source zener diode**|
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|BVGSO|Gate-source breakdown voltage|IGS= ± 1mA (open drain)|30|||V|



The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 

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**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**Figure 2. Safe operating area for TO-220, D[2] PAK, I[2] PAK** 

**==> picture [155 x 157] intentionally omitted <==**

**Figure 3. Thermal impedance for TO-220, D[2] PAK, I[2] PAK** 

**==> picture [147 x 147] intentionally omitted <==**

**Figure 4. Safe operating area for TO-220FP** 

**Figure 5. Thermal impedance for TO-220FP** 

**==> picture [155 x 153] intentionally omitted <==**

**==> picture [151 x 151] intentionally omitted <==**

**Figure 6. Output characteristics** 

**Figure 7. Transfer characteristics** 

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**Electrical characteristics** 

## **Figure 8. Transconductance** 

## **Figure 9. Static drain-source on resistance** 

**==> picture [149 x 149] intentionally omitted <==**

**==> picture [148 x 148] intentionally omitted <==**

**Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations** 

**==> picture [149 x 149] intentionally omitted <==**

**==> picture [147 x 147] intentionally omitted <==**

**Figure 12. Normalized gate threshold voltage Figure 13. Normalized on resistance vs vs temperature temperature** 

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**Electrical characteristics** 

## **Figure 14. Source-drain diode forward characteristic** 

**==> picture [147 x 147] intentionally omitted <==**

## **Figure 15. Normalized BVDSS vs temperature** 

**==> picture [147 x 147] intentionally omitted <==**

## **Figure 16. Maximum avalanche energy vs temperature** 

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**Test circuits** 

## **3 Test circuits** 

**Figure 17. Switching times test circuit for Figure 18. Gate charge test circuit resistive load** 

**==> picture [463 x 195] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDD<br>12V 47kΩ<br>1kΩ<br>100nF<br>RL 2200 3.3<br>µF µF<br>VDD IG=CONST<br>VD Vi=20V=VGMAX 100Ω D.U.T.<br>VGS<br>2200<br>RG D.U.T. µF 2.7kΩ VG<br>PW<br>47kΩ<br>1kΩ<br>PW<br>AM01468v1 AM01469v1<br>Figure 19. Test circuit for inductive load  Figure 20. Unclamped inductive load test<br>switching and diode recovery times circuit<br>**----- End of picture text -----**<br>


**==> picture [463 x 346] intentionally omitted <==**

**----- Start of picture text -----**<br>
L<br>A A A<br>D<br>G D.U.T. FASTDIODE L=100µH VD 2200 3.3<br>S B 3.3 1000 µF µF VDD<br>25 Ω B B D µF µF VDD ID<br>G<br>RG S<br>Vi D.U.T.<br>Pw<br>AM01470v1 AM01471v1<br>Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform<br>V(BR)DSS ton toff<br>VD tdon tr tdoff tf<br>90% 90%<br>IDM<br>10%<br>ID 0 10% VDS<br>VDD VDD 90%<br>VGS<br>AM01472v1 0 10% AM01473v1<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 

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**Package mechanical data** 

## **Table 9. TO-220FP mechanical data** 

|**Dim.**|**mm**<br>**Min.**<br>**Typ.**<br>**Max.**|**mm**<br>**Min.**<br>**Typ.**<br>**Max.**|**mm**<br>**Min.**<br>**Typ.**<br>**Max.**|
|---|---|---|---|
|||**Typ.**|**Max.**|
|A|4.4||4.6|
|B|2.5||2.7|
|D|2.5||2.75|
|E|0.45||0.7|
|F|0.75||1|
|F1|1.15||1.70|
|F2|1.15||1.70|
|G|4.95||5.2|
|G1|2.4||2.7|
|H|10||10.4|
|L2||16||
|L3|28.6||30.6|
|L4|9.8||10.6|
|L5|2.9||3.6|
|L6|15.9||16.4|
|L7|9||9.3|
|Dia|3||3.2|



## **Figure 23. TO-220FP drawing** 

**==> picture [405 x 265] intentionally omitted <==**

**----- Start of picture text -----**<br>
L7<br>E<br>A<br>B<br>D<br>Dia<br>L5<br>L6<br>F1 F2<br>F<br>H G<br>G1<br>L2 L4<br>L3<br>7012510_Rev_K<br>**----- End of picture text -----**<br>


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Doc ID 8979 Rev 6 11/17<br>**----- End of picture text -----**<br>


**STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z** 

**Package mechanical data** 

## **TO-220 type A mechanical data** 

||||**mm**|||
|---|---|---|---|---|---|
||**Dim**|||||
|||**Min**|**Typ**|**Max**||
||A|4.40||4.60||
||b|0.61||0.88||
||b1|1.14||1.70||
||c|0.48||0.70||
||D|15.25||15.75||
||D1||1.27|||
||E|10||10.40||
||e|2.40||2.70||
||e1|4.95||5.15||
||F|1.23||1.32||
||H1|6.20||6.60||
||J1|2.40||2.72||
||L|13||14||
||L1|3.50||3.93||
||L20||16.40|||
||L30||28.90|||
||∅P|3.75||3.85||
||Q|2.65||2.95||



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**Package mechanical data** 

## **I²PAK (TO-262) mechanical data** 

|**Dim**|**mm**|**mm**|**mm**|**inch**|**inch**|**inch**|
|---|---|---|---|---|---|---|
||**Min**|**Typ**|**Max**|**Min**|**Typ**|**Max**|
|A|4.40||4.60|0.173||0.181|
|A1|2.40||2.72|0.094||0.107|
|b|0.61||0.88|0.024||0.034|
|b1|1.14||1.70|0.044||0.066|
|c|0.49||0.70|0.019||0.027|
|c2|1.23||1.32|0.048||0.052|
|D|8.95||9.35|0.352||0.368|
|e|2.40||2.70|0.094||0.106|
|e1|4.95||5.15|0.194||0.202|
|E|10||10.40|0.393||0.410|
|L|13||14|0.511||0.551|
|L1|3.50||3.93|0.137||0.154|
|L2|1.27||1.40|0.050||0.055|



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**Package mechanical data** 

## **D2PAK (TO-263) mechanical data** 

**==> picture [399 x 569] intentionally omitted <==**

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mm inc h<br>Dim<br>Min Typ Max Min Typ Max<br>A 4.40 4.60 0.173 0.181<br>A1 0.03 0.23 0.001 0.009<br>b 0.70 0.93 0.027 0.037<br>b2 1.14 1.70 0.045 0.067<br>c 0.45 0.60 0.017 0.024<br>c2 1.23 1.36 0.048 0.053<br>D 8.95 9.35 0.352 0.368<br>D1 7.50 0.295<br>E 10 10.40 0.394 0.409<br>E1 8.50 0.334<br>e 2.54 0.1<br>e1 4.88 5.28 0.192 0.208<br>H 15 15.85 0.590 0.624<br>J1 2.49 2.69 0.099 0.106<br>L 2.29 2.79 0.090 0.110<br>L1 1.27 1.40 0.05 0.055<br>L2 1.30 1.75 0.051 0.069<br>R 0.4 0.016<br>V2 0° 8° 0° 8°<br>0079457_M<br>**----- End of picture text -----**<br>


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**Packaging mechanical data** 

## **5 Packaging mechanical data** 

## **D[2] PAK FOOTPRINT** 

## **TAPE AND REEL SHIPMENT** 

**==> picture [383 x 359] intentionally omitted <==**

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REEL MECHANICAL DATA<br>40Access mm min.hole _ . T mm inch<br>at slot location DIM.<br>MIN. MAX. MIN. MAX.<br>A 330 12.992<br>B 1.5 0.059<br>ite mie C 12.8 13.2 0.504 0.520<br>D 20.2 0795<br>BN fy] | G 24.4 26.4 0.960 1.039<br>Full radius iN / Tape slot : - G measured N 100 3.937<br>tape start at hub T 30.4 1.197<br>25mm min.<br>—— width<br>BASE QTY BULK QTY<br>TAPE MECHANICAL DATA<br>1000 1000<br>mm inch<br>DIM. — ; [+}]<br>ee MIN. MAX. ee MIN. ee MAX. | .<br>A0 10.5 10.7 0.413 0.421<br>B0 15.7 15.9 0.618 0.626<br>D 1.5 1.6 0.059 0.063 TAPE oO OO Cee<br>D1 1.59 1.61 0.062 0.063<br>eeee E 1.65 ee 1.85 es 0.065 0.073 PEERKIIL LETe<br>F 11.4 11.6 0.449 0.456<br>K0 4.8 5.0 0.189 0.197<br>P0 3.9 4.1 0.153 0.161<br>r [| || ff] TAL User Direction of Feed<br>P1 11.9 12.1 0.468 0.476<br>P2 1.9 2.1 0.075 0.082<br>R 50 1.574<br>T 0.25 0.35 0.0098 0.0137<br>aee ee ee ee ee iz ™<br>W 23.7 24.3 0.933 0.956<br>a a a FEEDEEDDIRECTION, DIRECTION Bending radius<br>* on sales type<br>**----- End of picture text -----**<br>


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**Revision history** 

## **6 Revision history** 

## **Table 10. Revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|09-Sep-2004|3|Complete version|
|16-Aug-2006|4|New template, no content change|
|09-Oct-2006|5|Corrected order code|
|28-Mar-2010|6|Corrected_Table 1: Device summary_|



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## **Please Read Carefully:** 

Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 

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Doc ID 8979 Rev 6 



## Links

- [View this product on Novapart](https://novapart.co/products/STB7NK80ZT4/power-mosfet-n-channel-800-v-26-a-15-ohm-to-263)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/stb7nk80zt4/mosfet-n-ch-800v-5-2a-d2pak/dp/1752012)
---

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