# Power MOSFET, N Channel, 650 V, 4 A, 1.2 ohm, TO-263 (D2PAK), Surface Mount

![Product image](https://novapart.co/image/farnell:2460386/)

**URL**: https://novapart.co/products/STB6N65M2/power-mosfet-n-channel-650-v-4-a-12-ohm-to-263
**SKU**: STB6N65M2
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.7040
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Power Dissipation | 60W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 60W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 1.2ohm |
| Transistor Case Style | TO-263 (D2PAK) |
| Drain Source Voltage Vds | 650V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 4A |
| Drain Source On State Resistance | 1.2ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2460386/)

## **STB6N65M2, STD6N65M2** 

N-channel 650 V, 1.2 Ω typ., 4 A MDmesh™ M2 Power MOSFETs in D[2] PAK and DPAK packages 

**Datasheet** - **preliminary data** 

## **Features** 

**==> picture [116 x 49] intentionally omitted <==**

**----- Start of picture text -----**<br>
TAB TAB<br>3<br>3 1<br>1<br>2 DPAK<br>D  PAK<br>**----- End of picture text -----**<br>


**Order codes VDS RDS(on) max ID** STB6N65M2 650 V 1.35 Ω 4 A STD6N65M2 ~~ee~~ • Extremely low gate charge 

- Excellent output capacitance (COSS) profile 

- 100% avalanche tested 

- Zener-protected 

## **Applications** 

## **Figure 1. Internal schematic diagram** 

- Switching applications 

**==> picture [18 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
, TAB<br>**----- End of picture text -----**<br>


## **Description** 

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. 

**==> picture [33 x 6] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM15572v1<br>**----- End of picture text -----**<br>


**Table 1. Device summary** 

|**Order codes**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STB6N65M2|6N65M2|D2PAK|Tape and reel|
|STD6N65M2||DPAK||



August 2014 

DocID026762 Rev 1 

1/23 

_www.st.com_ 

**Contents** 

**STB6N65M2, STD6N65M2** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
||4.1<br>D2PAK, STB6N65M2  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10|
||4.2<br>DPAK, STD6N65M2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13|
|**5**|**Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19**|
|**6**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22**|



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**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2. Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VGS|Gate-source voltage|±25|V|
|ID|Drain current (continuous) at TC= 25 °C|4|A|
|ID|Drain current (continuous) at TC= 100 °C|2.5|A|
|IDM<br>(1)|Drain current (pulsed)|16|A|
|PTOT|Total dissipation at TC= 25 °C|60|W|
|dv/dt(2)|Peak diode recovery voltage slope|15|V/ns|
|dv/dt(3)|MOSFET dv/dt ruggedness|50||
|Tstg|Storage temperature|-55 to 150|°C|
|Tj|Max. operating junction temperature|||



1. Pulse width limited by safe operating area 

2. ISD ≤ 4 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD=400 V 

3. VDS ≤ 520 V 

**Table 3. Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Value**|**Unit**|
|---|---|---|---|---|
|||**D2PAK**|**DPAK**||
|Rthj-case|Thermal resistance junction-case max|2.08||°C/W|
|Rthj-pcb|Thermal resistance junction-pcb max(1)|30|50|°C/W|



1. When mounted on 1 inch² FR-4, 2 Oz copper board 

**Table 4. Avalanche characteristics** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|IAR|Avalanche current, repetitive or not<br>repetitive (pulse width limited by Tjmax)|0.5|A|
|EAS|Single pulse avalanche energy (starting<br>Tj=25°C, ID= IAR; VDD=50)|100|mJ|



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**STB6N65M2, STD6N65M2** 

**Electrical characteristics** 

## **2 Electrical characteristics** 

(TC = 25 °C unless otherwise specified) 

**Table 5. On /off states** 

|||**Table 5. On /off states**|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|V(BR)DSS|Drain-source<br>breakdown voltage|VGS= 0, ID= 1 mA|650|||V|
|IDSS|Zero gate voltage<br>drain current|VGS= 0, VDS= 650 V|||1|µA|
|||VGS= 0, VDS= 650 V,<br>TC=125 °C|||100|µA|
|IGSS|Gate-body leakage<br>current|VDS= 0, VGS= ± 25 V|||±10|µA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 µA|2|3|4|V|
|RDS(on)|Static drain-source<br>on-resistance|VGS= 10 V, ID= 2 A||1.2|1.35|Ω|



**Table 6. Dynamic** 

|||**Table 6. Dynamic**|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|Ciss|Input capacitance|VGS= 0, VDS= 100 V,<br>f = 1 MHz|-|226|-|pF|
|Coss|Output capacitance||-|12.8|-|pF|
|Crss|Reverse transfer<br>capacitance||-|0.65|-|pF|
|Coss eq.<br>(1)|Equivalent output<br>capacitance|VGS= 0, VDS= 0 to 520 V|-|114|-|pF|
|RG|Intrinsic gate<br>resistance|f = 1 MHz open drain|-|6.5|-|Ω|
|Qg|Total gate charge|VDD= 520 V, ID= 4 A,<br>VGS= 10 V<br>(see_Figure 6_)|-|9.8|-|nC|
|Qgs|Gate-source charge||-|1.7|-|nC|
|Qgd|Gate-drain charge||-|4|-|nC|



1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 

**Table 7. Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delay time|VDD= 325 V, ID= 2 A,<br>RG= 4.7Ω,VGS= 10 V<br>(see_Figure 13_and_Figure 18_)|-|19|-|ns|
|tr|Rise time||-|7|-|ns|
|td(off)|Turn-off delay time||-|6.5|-|ns|
|tf|Fall time||-|20|-|ns|



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**STB6N65M2, STD6N65M2** 

**Electrical characteristics** 

**Table 8. Source drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD|Source-drain current||-||4|A|
|ISDM (1)|Source-drain current (pulsed)||-||16|A|
|VSD (2)|Forward on voltage|ISD= 4 A, VGS= 0|-||1.6|V|
|trr|Reverse recovery time|ISD= 4 A, di/dt = 100 A/µs<br>VDD= 60 V (see_Figure 15_)|-|260||ns|
|Qrr|Reverse recovery charge||-|1.2||µC|
|IRRM|Reverse recovery current||-|9.2||A|
|trr|Reverse recovery time|ISD= 4 A, di/dt = 100 A/µs<br>VDD= 60 V, Tj= 150 °C<br>(see_Figure 15_)|-|400||ns|
|Qrr|Reverse recovery charge||-|1.84||µC|
|IRRM|Reverse recovery current||-|9.1||A|



1. Pulse width limited by safe operating area. 

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% 

DocID026762 Rev 1 

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**STB6N65M2, STD6N65M2** 

**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**Figure 2. Safe operating area Figure 3. Thermal impedance** 

**Figure 4. Output characteristics** 

**Figure 5. Transfer characteristics** 

**Figure 6. Gate charge vs gate-source voltage** 

**Figure 7. Static drain-source on-resistance** 

6/23 

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**STB6N65M2, STD6N65M2** 

**Electrical characteristics** 

**Figure 8. Capacitance variations** 

**Figure 10.  Normalized on-resistance vs temperature** 

**Figure 9. Normalized gate threshold voltage vs temperature** 

**Figure 11. Normalized V(BR)DSS vs temperature** 

**Figure 12. Source-drain diode forward characteristics** 

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**STB6N65M2, STD6N65M2** 

**Test circuits** 

## **3 Test circuits** 

**==> picture [462 x 184] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 13. Switching times test circuit for  Figure 14. Gate charge test circuit<br>resistive load<br>VDD<br>12V 47kΩ<br>1kΩ<br>100nF<br>RL 2200 3.3<br>μF μF VDD IG=CONST<br>VD Vi=20V=VGMAX 100Ω D.U.T.<br>VGS 2200<br>RG D.U.T. μF 2.7kΩ VG<br>PW<br>47kΩ<br>1kΩ<br>PW<br>AM01468v1 AM01469v1<br>**----- End of picture text -----**<br>


**Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test circuit switching and diode recovery times** 

**==> picture [459 x 157] intentionally omitted <==**

**----- Start of picture text -----**<br>
L<br>A A A<br>D<br>FAST L=100μH VD<br>G D.U.T. DIODE 2200 3.3<br>S B 3.3 1000 μF μF VDD<br>25 Ω B B D μF μF VDD ID<br>G<br>RG S<br>Vi D.U.T.<br>Pw<br>AM01470v1 AM01471v1<br>**----- End of picture text -----**<br>


**Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform** 

**==> picture [459 x 157] intentionally omitted <==**

**----- Start of picture text -----**<br>
�������� ton toff<br>�� tdon tr tdoff tf<br>90% 90%<br>���<br>10%<br>�� 0 10% VDS<br>��� ��� 90%<br>VGS<br>��������� 0 10% AM01473v1<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com_ . ECOPACK[®] is an ST trademark. 

DocID026762 Rev 1 

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**STB6N65M2, STD6N65M2** 

**Package mechanical data** 

## **4.1 D[2] PAK, STB6N65M2** 

**==> picture [166 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 19. D²PAK (TO-263) drawing<br>**----- End of picture text -----**<br>


**==> picture [405 x 320] intentionally omitted <==**

**----- Start of picture text -----**<br>
0079457_T<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

**Table 9. D²PAK (TO-263) mechanical data** 

||**Table 9. D²PAK(TO-263) mechanical data**|**Table 9. D²PAK(TO-263) mechanical data**|**Table 9. D²PAK(TO-263) mechanical data**|
|---|---|---|---|
|**Dim.**|**mm**|||
||**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|A1|0.03||0.23|
|b|0.70||0.93|
|b2|1.14||1.70|
|c|0.45||0.60|
|c2|1.23||1.36|
|D|8.95||9.35|
|D1|7.50|||
|E|10||10.40|
|E1|8.50|||
|e||2.54||
|e1|4.88||5.28|
|H|15||15.85|
|J1|2.49||2.69|
|L|2.29||2.79|
|L1|1.27||1.40|
|L2|1.30||1.75|
|R||0.4||
|V2|0°||8°|



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**Package mechanical data** 

**==> picture [405 x 245] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 20. D²PAK footprint [(a)]<br>16.90<br>12.20 5.08<br>1.60<br>3.50<br>9.75<br>Footprint<br>**----- End of picture text -----**<br>


- a. All dimension are in millimeters 

12/23 

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**Package mechanical data** 

## **4.2 DPAK, STD6N65M2** 

**==> picture [196 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 21. DPAK (TO-252) type A drawing<br>**----- End of picture text -----**<br>


**==> picture [405 x 558] intentionally omitted <==**

**----- Start of picture text -----**<br>
���������<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

**Table 10. DPAK (TO-252) type A mechanical data** 

||**Table 10. DPAK(TO-252) type A mechanical data**|**Table 10. DPAK(TO-252) type A mechanical data**|**Table 10. DPAK(TO-252) type A mechanical data**|
|---|---|---|---|
|**Dim.**|**mm**|||
||**Min.**|**Typ.**|**Max.**|
|A|2.20||2.40|
|A1|0.90||1.10|
|A2|0.03||0.23|
|b|0.64||0.90|
|b4|5.20||5.40|
|c|0.45||0.60|
|c2|0.48||0.60|
|D|6.00||6.20|
|D1||5.10||
|E|6.40||6.60|
|E1||4.70||
|e||2.28||
|e1|4.40||4.60|
|H|9.35||10.10|
|L|1.00||1.50|
|(L1)||2.80||
|L2||0.80||
|L4|0.60||1.00|
|R||0.20||
|V2|0°||8°|



14/23 

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**Package mechanical data** 

**Figure 22. DPAK (TO-252) type A footprint[(b)]** 

**==> picture [405 x 350] intentionally omitted <==**

**----- Start of picture text -----**<br>
�����������<br>**----- End of picture text -----**<br>


- b. All dimensions are in millimeters 

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**Package mechanical data** 

**Figure 23. DPAK (TO-252) type C drawing** 

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**Package mechanical data** 

**Table 11. DPAK (TO-252) type C mechanical data** 

||**Table 11. DPAK(TO-252) type C mechanical data**|**Table 11. DPAK(TO-252) type C mechanical data**|**Table 11. DPAK(TO-252) type C mechanical data**|
|---|---|---|---|
|**Dim.**|**mm**|||
||**Min.**|**Typ.**|**Max.**|
|A|2.20|2.30|2.38|
|A1|0.90|1.01|1.10|
|A2|0.00||0.10|
|b|0.72||0.85|
|b4|5.13|5.33|5.46|
|c|0.47||0.60|
|c2|0.47||0.60|
|D|6.00|6.10|6.20|
|D1|5.25|||
|E|6.50|6.60|6.70|
|e|2.186|2.286|2.386|
|E1|4.70|||
|H|9.80|10.10|10.40|
|L|1.40|1.50|1.70|
|L2|0.90||1.25|
|L3|0.51 BSC|||
|L4|0.60|0.80|1.00|
|L6|1.80 BSC|||
|Θ1|5°|7°|9°|
|Θ2|5°|7°|9°|
|V2|0°||8°|



DocID026762 Rev 1 

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**STB6N65M2, STD6N65M2** 

**Package mechanical data** 

**Figure 24. DPAK (TO-252) type C footprint[(c)]** 

**==> picture [405 x 348] intentionally omitted <==**

**----- Start of picture text -----**<br>
���������������<br>**----- End of picture text -----**<br>


- c. All dimensions are in millimeters 

18/23 

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**STB6N65M2, STD6N65M2** 

**Packaging mechanical data** 

## **5 Packaging mechanical data** 

## **Figure 25. Tape** 

**==> picture [399 x 317] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 pitches cumulative<br>tolerance on tape +/- 0.2 mm<br>Top cover P0 D P2<br>T tape<br>E<br>iw So0 00 00 51 6 ome<br>F<br>K0 W<br>B1 B0<br>A E I RI RI B IE,<br>For machine ref. only A0 P1 D1<br>including draft and<br>radii concentric around B0 ——<br>User direction of feed<br>R<br>sogtees<br>[Se EEE EE<br>—— Bending radius<br>User direction of feed<br>AM08852v1<br>**----- End of picture text -----**<br>


DocID026762 Rev 1 19/23 ~~oe~~ 

**STB6N65M2, STD6N65M2** 

**Packaging mechanical data** 

**Table 12. D²PAK (TO-263) tape and reel mechanical data** 

||**Tape**|**Tape**||**Reel**|**Reel**|
|---|---|---|---|---|---|
|**Dim.**|**mm**||**Dim.**|**mm**||
||**Min.**|**Max.**||**Min.**|**Max.**|
|A0|10.5|10.7|A||330|
|B0|15.7|15.9|B|1.5||
|D|1.5|1.6|C|12.8|13.2|
|D1|1.59|1.61|D|20.2||
|E|1.65|1.85|G|24.4|26.4|
|F|11.4|11.6|N|100||
|K0|4.8|5.0|T||30.4|
|P0|3.9|4.1||||
|P1|11.9|12.1||Base qty|1000|
|P2|1.9|2.1||Bulk qty|1000|
|R|50|||||
|T|0.25|0.35||||
|W|23.7|24.3||||



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**STB6N65M2, STD6N65M2** 

**Packaging mechanical data** 

**Table 13. DPAK (TO-252) tape and reel mechanical data** 

||**Tape**|**Tape**||**Reel**|**Reel**|
|---|---|---|---|---|---|
|**Dim.**|**mm**||**Dim.**|**mm**||
||**Min.**|**Max.**||**Min.**|**Max.**|
|A0|6.8|7|A||330|
|B0|10.4|10.6|B|1.5||
|B1||12.1|C|12.8|13.2|
|D|1.5|1.6|D|20.2||
|D1|1.5||G|16.4|18.4|
|E|1.65|1.85|N|50||
|F|7.4|7.6|T||22.4|
|K0|2.55|2.75||||
|P0|3.9|4.1||Base qty.|2500|
|P1|7.9|8.1||Bulk qty.|2500|
|P2|1.9|2.1||||
|R|40|||||
|T|0.25|0.35||||
|W|15.7|16.3||||



**==> picture [75 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 26. Reel<br>**----- End of picture text -----**<br>


**==> picture [405 x 256] intentionally omitted <==**

**----- Start of picture text -----**<br>
T<br>REEL DIMENSIONS<br>40mm min.<br>Access hole<br>At sl ot location<br>B<br>D<br>C<br>N<br>A<br>Full radius Tape slot  G measured at hub<br>in core for<br>tape start 25 mm min.<br>width<br>AM08851v2<br>**----- End of picture text -----**<br>


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**STB6N65M2, STD6N65M2** 

**Revision history** 

## **6 Revision history** 

**Table 14. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|04-Aug-2014|1|First release.|



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**STB6N65M2, STD6N65M2** 

## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2014 STMicroelectronics – All rights reserved 

DocID026762 Rev 1 

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## Links

- [View this product on Novapart](https://novapart.co/products/STB6N65M2/power-mosfet-n-channel-650-v-4-a-12-ohm-to-263)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/stmicroelectronics/stb6n65m2/mosfet-n-channel-650v-4a-to-263/dp/2460386)
---

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