# Power MOSFET, N Channel, 30 V, 27.5 A, 0.01 ohm, TO-263 (D2PAK), Surface Mount

![Product image](https://novapart.co/image/farnell:1752001/)

**URL**: https://novapart.co/products/STB55NF03LT4/power-mosfet-n-channel-30-v-275-a-001-ohm-to-263
**SKU**: STB55NF03LT4
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.5130
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Power Dissipation | 80W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 80W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.01ohm |
| Transistor Case Style | TO-263 (D2PAK) |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 27.5A |
| Drain Source On State Resistance | 0.01ohm |
| Gate Source Threshold Voltage Max | 1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1752001/)

**==> picture [58 x 36] intentionally omitted <==**

## **STP55NF03L STB55NF03L STB55NF03L-1** 

## N-CHANNEL 30V - 0.01 Ω - 55A TO-220/D[2] PAK/I[2] PAK STripFET™ II POWER MOSFET 

|**TYPE**|**VDSS**|**RDS(on)**|**ID**|
|---|---|---|---|
|STP55NF03L<br>STB55NF03L<br>STB55NF03L-1|30 V<br>30 V<br>30 V|<0.013Ω<br><0.013Ω<br><0.013Ω|55 A<br>55 A<br>55 A|



- I TYPICAL RDS(on) = 0.01 Ω 

- I OPTIMIZED FOR HIGH SWITCHING OPERATIONS 

- I LOW GATE CHARGE 

- I LOGIC LEVEL GATE DRIVE 

## **DESCRIPTION** 

This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. 

## **APPLICATIONS** 

- I LOW VOLTAGE DC-DC CONVERTERS 

- I HIGH CURRENT, HIGH SWITCHING SPEED 

- I HIGH EFFICIENCY SWITCHING CIRCUITS 

**==> picture [222 x 179] intentionally omitted <==**

**----- Start of picture text -----**<br>
3<br>1 [3]<br>1 [2]<br>D [2] PAK<br>I [2] PAK<br>TO-263<br>TO-262<br>3<br>2<br>1<br>TO-220<br>**----- End of picture text -----**<br>


## **INTERNAL SCHEMATIC DIAGRAM** 

**==> picture [75 x 111] intentionally omitted <==**

## **ABSOLUTE MAXIMUM RATINGS** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VDS|Drain-source Voltage (VGS= 0)|30|V|
|VDGR|Drain-gate Voltage (RGS= 20 kΩ)|30|V|
|VGS|Gate- source Voltage|± 16|V|
|ID|Drain Current (continuous) at TC= 25°C|55|A|
|ID|Drain Current (continuous) at TC= 100°C|39|A|
|IDM(•)|Drain Current (pulsed)|220|A|
|Ptot|Total Dissipation at TC= 25°C|80|W|
||Derating Factor|0.53|W/°C|
|Tstg|Storage Temperature|-60 to 175|°C|
|Tj|Max. Operating Junction Temperature|175|°C|



(•) Pulse width limited by safe operating area. 

. 

March 2002 

1/11 

## **STP55NF03L STB55NF03L/-1** 

## **THERMAL DATA** 

|Rthj-case<br>Rthj-amb<br>Tl|Thermal Resistance Junction-case<br>Thermal Resistance Junction-ambient<br>Maximum Lead Temperature For Soldering Purpose<br>Max<br>Max<br>Typ|1.875<br>62.5<br>300|°C/W<br>°C/W<br>°C|
|---|---|---|---|



## **ELECTRICAL CHARACTERISTICS** (Tcase = 25 °C unless otherwise specified) 

## OFF 

|OFF|||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|V(BR)DSS|Drain-source<br>Breakdown Voltage|ID= 250 µA, VGS= 0|30|||V|
|IDSS|Zero Gate Voltage<br>Drain Current (VGS= 0)|VDS= Max Rating<br>VDS= Max Rating TC= 125°C|||1<br>10|µA<br>µA|
|IGSS|Gate-body Leakage<br>Current (VDS= 0)|VGS= ± 16V|||±100|nA|
|ON(***)**|||||||
|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|VGS(th)|Gate Threshold Voltage|VDS= VGS<br>ID= 250 µA|1|||V|
|RDS(on)|Static Drain-source On<br>Resistance|VGS= 10 V<br>ID= 27.5 A<br>VGS= 4.5 V<br>ID= 27.5 A||0.01<br>0.013|0.013<br>0.020|Ω<br>Ω|
|DYNAMIC|||||||
|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|gfs(*)|Forward Transconductance|VDS> ID(on)x RDS(on)max,<br>ID= 27.5 A||30||S|
|Ciss<br>Coss<br>Crss|Input Capacitance<br>Output Capacitance<br>Reverse Transfer<br>Capacitance|VDS= 25V, f = 1 MHz, VGS= 0||1265<br>435<br>115||pF<br>pF<br>pF|



2/11 

**STP55NF03L STB55NF03L/-1** 

## **ELECTRICAL CHARACTERISTICS** (continued) 

## SWITCHING ON 

|**Symbol**|**Parameter**|**Test Conditions**<br>**Min.**|**Typ.**<br>**Max.**<br>**Unit**|
|---|---|---|---|
|td(on)<br>tr<br> <br>|Turn-on Delay Time<br>Rise Time<br>V<br>R<br>(R|DD= 15 V<br>ID= 27.5 A<br>G= 4.7Ω<br>VGS= 4.5 V<br>esistive Load, Figure 3)|28<br>400<br>ns<br>ns|
|Qg<br>Qgs<br>Qgd<br> <br> <br>|Total Gate Charge<br>Gate-Source Charge<br>Gate-Drain Charge<br>V|DD= 24 V ID= 55 A VGS= 4.5V|20<br>7<br>10<br>27<br>nC<br>nC<br>nC|



## SWITCHING OFF 

|**Symbol**|**Parameter**|**Test Conditions**<br>**Min.**|**Typ.**<br>**Max.**<br>**Unit**|
|---|---|---|---|
|td(off)<br>tf<br> <br>|Turn-off Delay Time<br>Fall Time<br>V<br>R<br>(R|DD= 15V<br>ID= 27.5 A<br>G= 4.7Ω,<br>VGS= 4.5 V<br>esistive Load, Figure 3)|25<br>50<br>ns<br>ns|



## SOURCE DRAIN DIODE 

|**Symbol**|**Parameter**|**Test Conditions**<br>**Min.**|**Typ.**<br>**Max.**<br>**Unit**|
|---|---|---|---|
|ISD<br>ISDM (•)<br> <br>|Source-drain Current<br>Source-drain Current (pulsed)||55<br>220<br>A<br>A|
|VSD (*)<br>|Forward On Voltage<br>IS|D= 55 A<br>VGS= 0|1.3<br>V|
|trr<br>Qrr<br>IRRM<br> <br> <br>|Reverse Recovery Time<br>Reverse Recovery Charge<br>Reverse Recovery Current<br>IS<br>V<br>(s|D= 55 A<br>di/dt = 100A/µs<br>DD= 30 V<br>Tj= 150°C<br>ee test circuit, Figure 5)|70<br>160<br>4.5<br>ns<br>nC<br>A|



(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 

(•)Pulse width limited by safe operating area. 

Safe Operating Area 

**==> picture [220 x 223] intentionally omitted <==**

Thermal Impedance 

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3/11 

**STP55NF03L STB55NF03L/-1** 

Output Characteristics 

Transconductance 

Gate Charge vs Gate-source Voltage 

## Transfer Characteristics 

Static Drain-source On Resistance 

Capacitance Variations 

4/11 

**STP55NF03L STB55NF03L/-1** 

Normalized Gate Threshold Voltage vs Temperature 

Normalized on Resistance vs Temperature 

Source-drain Diode Forward Characteristics 

Normalized Breakdown Voltage vs Temperature. 

. . 

5/11 

**STP55NF03L STB55NF03L/-1** 

**Fig. 1: Unclamped Inductive Load Test Circuit** 

**==> picture [214 x 163] intentionally omitted <==**

**Fig. 3:** Switching Times Test Circuits For Resistive Load 

**==> picture [211 x 89] intentionally omitted <==**

**Fig. 2:** Unclamped Inductive Waveform 

**==> picture [214 x 163] intentionally omitted <==**

**Fig. 4:** Gate Charge test Circuit 

**==> picture [214 x 146] intentionally omitted <==**

**Fig. 5:** Test Circuit For Inductive Load Switching And Diode Recovery Times 

**==> picture [202 x 117] intentionally omitted <==**

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**STP55NF03L STB55NF03L/-1** 

## **D[2] PAK MECHANICAL DATA** 

|**DIM.**|**mm.**<br>**MIN.**<br>**TYP.**<br>**MAX.**|**mm.**<br>**MIN.**<br>**TYP.**<br>**MAX.**|**mm.**<br>**MIN.**<br>**TYP.**<br>**MAX.**|**inch.**|**inch.**|**inch.**|
|---|---|---|---|---|---|---|
|||**TYP.**|**MAX.**|**MIN.**|**TYP.**|**TYP.**|
|**A**|4.4||4.6|0.173||0.181|
|**A1**|2.49||2.69|0.098||0.106|
|**A2**|0.03||0.23|0.001||0.009|
|**B**|0.7||0.93|0.028||0.037|
|**B2**|1.14||1.7|0.045||0.067|
|**C**|0.45||0.6|0.018||0.024|
|**C2**|1.21||1.36|0.048||0.054|
|**D**|8.95||9.35|0.352||0.368|
|**D1**||8|||0.315||
|**E**|10||10.4|0.394||0.409|
|**E1**|8.5||||0.334||
|**G**|4.88||5.28|0.192||0.208|
|**L**|15||15.85|0.591||0.624|
|**L2**|1.27||1.4|0.050||0.055|
|**L3**|1.4||1.75|0.055||0.069|
|**M**|2.4||3.2|0.094||0.126|
|**R**||0.4|||0.016||
|**V2**|0°||4°|0°||4°|



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**STP55NF03L STB55NF03L/-1** 

## **TO-220 MECHANICAL DATA** 

|**DIM.**|||||**mm**|**mm**||||||||||**inch**|**inch**|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
||**MIN.**||||**TYP.**||||**MAX.**||||**MIN.**|||**TYP.**|**MAX.**|
|A|4.40||||||||4.60||||0.173||||0.181|
|C|1.23||||||||1.32||||0.048||||0.051|
|D|2.40||||||||2.72||||0.094||||0.107|
|D1|||||1.27|||||||||||0.050||
|E|0.49||||||||0.70||||0.019||||0.027|
|F|0.61||||||||0.88||||0.024||||0.034|
|F1|1.14||||||||1.70||||0.044||||0.067|
|F2|1.14||||||||1.70||||0.044||||0.067|
|G|4.95||||||||5.15||||0.194||||0.203|
|G1|2.4||||||||2.7||||0.094||||0.106|
|H2|10.0||||||||10.40||||0.393||||0.409|
|L2|||||16.4|||||||||||0.645||
|L4|13.0||||||||14.0||||0.511||||0.551|
|L5|2.65||||||||2.95||||0.104||||0.116|
|L6|15.25||||||||15.75||||0.600||||0.620|
|L7|6.2||||||||6.6||||0.244||||0.260|
|L9|3.5||||||||3.93||||0.137||||0.154|
|DIA.|3.75||||||||3.85||||0.147||||0.151|
|||||||||||||||||||
|A<br>C||||||||||||||||E<br>F<br>G<br>H2<br>G1<br>P011C||
|||C||||||||||||||||
|||||||||||||||||||
|||||L6<br>D1<br>L7<br>Dia.<br>L5|D1||||L2|||||||||
|||||||||||||||||||
|||||||||||||||||F<br>G<br>H2<br>G1||
|||||||||||||||||||
|||||||||||||||||||
|||||||||||||||||||
|||||||||||||||||||
|||||||||||||||||||
|||||||||||||||||F||
||||||||||||L9||L4<br>F2|||||
|||||||||||||||||||
|||||||||||||||||||



8/11 

**STP55NF03L STB55NF03L/-1** 

## **TO-262 (I[2] PAK) MECHANICAL DATA** 

|**DIM**|**mm**|**mm**|**mm**|**inch**|**inch**|**inch**|
|---|---|---|---|---|---|---|
|**.**|**MIN.**|**TYP.**|**MAX.**|**MIN.**|**TYP.**|**MAX.**|
|A|4.4||4.6|0.173||0.181|
|A1|2.49||2.69|0.098||0.106|
|B|0.7||0.93|0.027||0.036|
|B2|1.14||1.7|0.044||0.067|
|C|0.45||0.6|0.017||0.023|
|C2|1.23||1.36|0.048||0.053|
|D|8.95||9.35|0.352||0.368|
|e|2.4||2.7|0.094||0.106|
|E|10||10.4|0.393||0.409|
|L|13.1||13.6|0.515||0.531|
|L1|3.48||3.78|0.137||0.149|
|L2|1.27||1.4|0.050||0.055|



**==> picture [357 x 279] intentionally omitted <==**

**----- Start of picture text -----**<br>
L1<br>L2 D L<br>P011P5/E<br>C<br>A<br>A1<br>C2<br>B2 B<br>e<br>E<br>**----- End of picture text -----**<br>


9/11 

**STP55NF03L STB55NF03L/-1** 

## **D[2] PAK FOOTPRINT** 

## **TUBE SHIPMENT (no suffix)*** 

## **TAPE AND REEL SHIPMENT (suffix ”T4”)*** 

**==> picture [440 x 380] intentionally omitted <==**

**----- Start of picture text -----**<br>
REEL MECHANICAL DATA<br>40 mm min. mm inch<br>_ Accessat slot locationhole : A‘ . T DIM. MIN. MAX. MIN. MAX.<br>A 330 12.992<br>pie” B 1.5 0.059<br>C 12.8 13.2 0.504 0.520<br>ine ;<br>n{ ofLo ZS HetL GD 20.224.4 26.4 0.9600.795 1.039<br>N 100 3.937<br>FullNLLradius < / Tape slot 7 G measured T 30.4 1.197<br>in core for at hub<br>tape start<br>25mm min. BASE QTY BULK QTY<br>1000 1000<br>TAPE MECHANICAL DATA<br>DIM. a mm inch<br>MIN. MAX. MIN. MAX.<br>ee ee<br>A0 10.5 10.7 0.413 0.421<br>ee B0 15.7 ee 15.9 ee 0.618 ee 0.626 eee 1 PE bee o2mm<br>D 1.5 1.6 0.059 0.063<br>D1 1.59 1.61 0.062 0.063<br>E 1.65 1.85 0.065 0.073<br>RT F 11.4 11.6 0.449 0.456 S<br>ee ee ee ee eee > SSS<br>K0 4.8 5.0 0.189 0.197<br>ee P0 3.9 ee 4.1 ee 0.153 ee 0.161 eee “2 ofcavity<br>a P1 11.9 ee 12.1 ee 0.468 ee 0.476 ee Liser Direction<br>P2 1.9 2.1 0075 0.082<br>ee ee ee ee ee TRL of Feed”<br>R 50 1.574<br>T 0.25 0.35 .0.0098 0.0137 "<br>a R min.<br>ee W 23.7 ee 24.3 ee 0.933 ee 0.956 ee<br>**----- End of picture text -----**<br>


* on sales type ~~©~~ 10/11 

**STP55NF03L STB55NF03L/-1** 

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 

The ST logo is registered trademark of STMicroelectronics  2002 STMicroelectronics - All Rights Reserved 

All other names are the property of their respective owners. 

STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. 

**http://www.st.com** 

11/11 



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---

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