# Power MOSFET, N Channel, 650 V, 30 A, 0.073 ohm, TO-263 (D2PAK), Surface Mount

![Product image](https://novapart.co/image/farnell:2784045RL/)

**URL**: https://novapart.co/products/STB38N65M5/power-mosfet-n-channel-650-v-30-a-0073-ohm-to-263
**SKU**: STB38N65M5
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €2.9000
**Stock**: 1000+
**Lead Time**: 113 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.073ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Powe

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | MDmesh V |
| Qualification | - |
| Power Dissipation | 190W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-263 (D2PAK) |
| Drain Source Voltage Vds | 650V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 30A |
| Drain Source On State Resistance | 0.073ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2784045RL/)

## **STB38N65M5, STP38N65M5,** k ¥f | augmented **STW38N65M5** N-channel 650 V, 0.073 Ω typ., 30 A MDmesh™ V Power MOSFETs in D[2] PAK, TO-220 and TO-247 packages 

**Datasheet** - **production data** 

**==> picture [180 x 144] intentionally omitted <==**

**----- Start of picture text -----**<br>
TAB<br>2<br>3<br>1<br>D [2] PAK<br>TAB<br>XN<br>1 2 3 2 3<br>1<br>TO-220<br>TO-247<br>**----- End of picture text -----**<br>


## **Features** 

|**Order codes**|**VDS@ **<br>**TJmax**|**RDS(on)**<br>**max**|**ID**|
|---|---|---|---|
|STB38N65M5|710 V|0.095Ω|30 A|
|STP38N65M5||||
|STW38N65M5||||



- Higher VDSS rating and high dv/dt capability 

- Excellent switching performance 

- 100% avalanche tested 

**Figure 1. Internal schematic diagram** 

## **Applications** 

- Switching applications 

## **Description** 

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which  is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. 

**Table 1. Device summary** 

|**Order codes**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STB38N65M5|38N65M5|D2PAK|Tape and reel|
|STP38N65M5||TO-220|Tube|
|STW38N65M5||TO-247||



April 2014 

DocID022851 Rev 4 

1/21 

This is information on a product in full production. 

_www.st.com_ 

**Contents** 

**STB38N65M5, STP38N65M5, STW38N65M5** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves)               . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10**|
||4.1<br>D2PAK, STB38N65M5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11|
||4.2<br>TO-220, STP38N65M5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14|
||4.3<br>TO-247, STW38N65M5  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16|
|**5**|**Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18**|
|**6**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20**|



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**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2. Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VGS|Gate-source voltage|± 25|V|
|ID|Drain current (continuous) at TC= 25 °C|30|A|
|ID|Drain current (continuous) at TC= 100 °C|19|A|
|IDM<br>(1)|Drain current (pulsed)|120|A|
|PTOT|Total dissipation at TC= 25 °C|190|W|
|dv/dt(2)|Peak diode recovery voltage slope|15|V/ns|
|dv/dt(3)|MOSFET dv/dt ruggedness|50|V/ns|
|Tstg|Storage temperature|- 55 to 150|°C|
|Tj|Max. operating junction temperature|150|°C|



1. Pulse width limited by safe operating area. 

2. ISD ≤  30 A, di/dt  ≤ 400 A/μs; VPeak < V(BR)DSS, VDD = 400 V 

3. VDS ≤  520 V 

**Table 3. Thermal data Value Symbol Parameter Unit D[2] PAK TO-220 TO-247** Rthj-case Thermal resistance junction-case max 0.66 °C/W Rthj-pcb Thermal resistance junction-pcb max[(1)] 30 °C/W ~~=——Sa—e~~ Rthj-amb Thermal resistance junction-ambient max 62.5 50 °C/W 1. 1.When mounted on 1inch² FR-4 board, 2 oz Cu. 

**Table 4. Avalanche characteristics** 

**Symbol Parameter Value Unit** Avalanche current, repetitive or not repetitive IAR (pulse width limited by Tjmax) 8 A Single pulse avalanche energy ~~To~~ EAS (starting tj = 25°C, Id= IAR; Vdd= 50V) 660 mJ 

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**Electrical characteristics** 

## **2 Electrical characteristics** 

(TC = 25 °C unless otherwise specified) 

**Table 5. On /off states** 

|**Symbol**<br>~~a~~|**Parameter**<br>~~ee Ge~~|**Test conditions**<br>~~Ge~~|**Min.**<br>~~es~~|**Typ.**<br>~~ee~~|**Max.**<br>~~ee~~|**Unit**<br>~~ee~~|
|---|---|---|---|---|---|---|
|V(BR)DSS<br>~~a~~<br>~~ee~~<br>~~EEE~~|Drain-source<br>breakdown voltage<br>~~ee Ge~~<br>~~ee~~<br>~~EEE~~|ID= 1 mA, VGS= 0<br>~~Ge~~<br>~~ee~~<br>~~EEE~~|650<br>~~es ~~<br>~~ee~~<br>~~EEE~~|~~ee~~<br>~~ee~~<br>~~EEE~~|~~ee~~<br>~~ee~~<br>~~EEE~~|V<br>~~ee~~<br>~~ee~~<br>~~EEE~~|
|IDSS<br>~~EEE~~<br>~~es~~|Zero gate voltage<br>drain current (VGS= 0)<br>~~EEE~~|VDS= 650 V<br>~~EEE~~|~~EEE~~|~~EEE~~|1<br>~~EEE~~|μA<br>~~EEE~~|
|||VDS= 650 V, TC=125 °C<br>~~EEE~~|~~EEE~~|~~EEE~~|100<br>~~EEE~~|μA<br>~~EEE~~|
|IGSS<br>~~EEE~~<br>~~es~~<br>~~ae~~<br>~~ee~~|Gate-body leakage<br>current (VDS= 0)<br>~~EEE~~<br>~~ee~~<br>~~ee~~|VGS= ± 25 V<br>~~EEE~~<br>~~es~~|~~EEE~~<br>~~es~~<br>~~**e**e~~|~~EEE~~<br>~~es~~<br>~~**e**~~|± 100<br>~~EEE~~<br>~~es~~<br>~~**e**e~~|nA<br>~~EEE~~<br>~~es~~<br>~~ee~~|
|VGS(th)<br>~~es~~<br>~~ae~~<br>~~ee~~|Gate threshold voltage <br>~~ee~~<br>~~ee~~|VDS= VGS, ID= 250 μA<br>~~es~~|3<br>~~es~~<br>~~**e**e~~|4<br>~~es~~<br>~~**e**~~|5<br>~~es~~<br>~~**e**e~~|V<br>~~es~~<br>~~ee~~|
|RDS(on)<br>~~ae~~<br>~~ee~~|Static drain-source<br>on-resistance<br>~~ee~~<br>~~ee~~|VGS= 10 V, ID= 15 A<br>~~es~~<br>~~e~~|~~es~~<br>~~**e**e~~<br>~~e~~|0.073<br>~~es~~<br>~~**e**~~|0.095<br>~~es~~<br>~~**e**e~~|Ω<br>~~es~~<br>~~ee~~|



**Table 6. Dynamic** 

|**Symbol**<br>~~a~~<br>~~a~~|**Parameter**<br>~~a~~<br>~~ee~~|**Test conditions**<br>~~ee~~<br>~~Pf~~|**Min.**<br>~~ee~~<br>~~Pf~~|**Typ.**<br>~~ee~~<br>~~Pf~~|**Max.**<br>~~ee~~<br>~~Pf~~|**Unit**<br>~~ee~~<br>~~Pf~~|
|---|---|---|---|---|---|---|
|Ciss<br>~~a ~~<br>~~a~~<br>~~+O~~|Input capacitance<br> ~~a~~<br>~~ee~~<br>~~+O~~|VDS= 100 V, f = 1 MHz,<br>VGS= 0<br>~~ee~~<br>~~Pf~~<br>~~+O~~<br>~~Soene~~|-<br>~~ee ~~<br>~~Pf~~|3000<br> ~~ee ~~<br>~~Pf~~|-<br> ~~ee~~<br>~~Pf~~|pF<br>~~ee~~<br>~~Pf~~|
|Coss<br>~~a~~<br>~~+O~~|Output capacitance<br>~~ee~~<br>~~+O~~||-<br>~~Pf~~|74<br>~~Pf~~|-<br>~~Pf~~|pF<br>~~Pf~~|
|Crss<br>~~+O~~<br>~~Soene~~|Reverse transfer<br>capacitance<br>~~+O~~<br>~~Soene~~||-<br>~~Soene~~|5.8<br>~~Soene~~|-<br>~~Soene~~|pF<br>~~Soene~~|
|Co(tr)<br>(1)<br>~~Soene~~|Equivalent<br>capacitance time<br>related<br>~~Soene~~|VDS= 0 to 520 V, VGS= 0<br>~~Soene~~|-<br>~~Soene~~|244<br>~~Soene~~|-<br>~~Soene~~|pF<br>~~Soene~~|
|Co(er)<br>(2)<br>~~Soene~~|Equivalent<br>capacitance energy<br>related<br>~~Soene~~||-<br>~~Soene~~|70<br>~~Soene~~|-<br>~~Soene~~|pF<br>~~Soene~~|
|RG<br>~~ee~~<br>~~ee~~<br>~~on~~|Intrinsic gate<br>resistance<br>~~ee~~<br>~~eee~~<br>~~on~~|f = 1 MHz open drain<br>~~ee~~<br>~~Poof~~<br>~~oe~~|-<br>~~ee~~<br>~~Poof~~<br>~~oe~~|2.4<br>~~ee~~<br>~~Poof~~<br>~~oe~~|-<br>~~ee~~<br>~~Poof~~<br>~~oe~~|Ω<br>~~ee~~<br>~~Poof~~<br>~~oe~~|
|Qg<br>~~ee~~<br>~~on~~|Total gate charge<br>~~eee~~<br>~~on~~|VDD= 520 V, ID= 15 A,<br>VGS= 10 V<br>(see_Figure 18_)<br>~~Poof~~<br>~~oe~~<br>~~PF~~|-<br>~~Poof~~<br>~~oe~~|71<br>~~Poof~~<br>~~oe~~|-<br>~~Poof~~<br>~~oe~~|nC<br>~~Poof~~<br>~~oe~~|
|Qgs<br>~~ee ~~<br>~~on~~<br>~~eee~~|Gate-source charge<br> ~~eee~~<br>~~on~~<br>~~eee~~||-<br>~~Poof~~<br>~~oe~~<br>~~PF~~<br>~~|~~|18<br>~~Poof~~<br>~~oe~~<br>~~|~~|-<br>~~Poof~~<br>~~oe~~|nC<br>~~Poof~~<br>~~oe~~|
|Qgd<br>~~on~~<br>~~eee~~|Gate-drain charge<br>~~on~~<br>~~eee~~||-<br>~~oe~~<br>~~PF~~<br>~~|~~|30<br>~~oe~~<br>~~|~~|-<br>~~oe~~|nC<br>~~oe~~|



2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS 

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**Electrical characteristics** 

**Table 7. Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td (v)|Voltage delay time|VDD= 400 V, ID= 20 A,<br>RG= 4.7Ω,VGS= 10 V<br>(see_Figure 19_and<br>_Figure 22_)|-|66|-|ns|
|tr (v)|Voltage rise time||-|9|-|ns|
|tf (i)|Current fall time||-|9|-|ns|
|tc(off)|Crossing time||-|13|-|ns|



**Table 8. Source drain diode** 

|**Symbol**<br>~~ee~~|**Parameter**<br>~~ee~~|**Test conditions**<br>~~ee~~|**Min.**<br>~~ee~~|**Typ.**<br>~~ee~~|**Max.**<br>~~ee~~|**Unit**<br>~~ee~~|
|---|---|---|---|---|---|---|
|ISD<br>~~a~~|Source-drain current||-||30|A|
|ISDM (1)<br>~~a~~|Source-drain current (pulsed)||-||120|A|
|VSD (2)<br>~~a~~<br>~~es~~|Forward on voltage<br>~~ee~~|ISD= 30 A, VGS= 0<br>~~|~~|-<br>~~|~~<br>~~|~~|~~|~~|1.5<br>~~|~~|V|
|trr<br>~~es~~<br>~~es~~|Reverse recovery time<br>~~ee~~|ISD= 30 A, di/dt = 100 A/μs<br>VDD= 100 V (see_Figure 22_)<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|-<br>~~|~~<br>~~|~~<br>~~||~~|382<br>~~|~~<br>~~|~~|~~|~~<br>~~|~~|ns|
|Qrr<br>~~es~~<br>~~es~~<br>~~es~~|Reverse recovery charge<br>~~ee~~||-<br>~~|~~<br>~~|~~<br>~~||~~<br>~~||~~|6.6<br>~~|~~<br>~~|~~<br>~~|~~|~~|~~<br>~~|~~<br>~~|~~|μC|
|IRRM<br>~~es~~<br>~~es~~<br>~~es~~|Reverse recovery current||-<br>~~| |~~<br>~~||~~<br>~~||~~|35<br>~~|~~<br>~~|~~<br>~~|~~|~~|~~<br>~~|~~<br>~~|~~|A|
|trr<br>~~es~~<br>~~es~~<br>~~es~~|Reverse recovery time|ISD= 30 A, di/dt = 100 A/μs<br>VDD= 100 V, Tj= 150 °C<br>(see_Figure 22_)<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|-<br>~~| |~~<br>~~||~~<br>~~||~~|522<br>~~|~~<br>~~|~~<br>~~|~~|~~|~~<br>~~|~~<br>~~|}~~|ns<br>~~|}~~|
|Qrr<br>~~es~~<br>~~es~~<br>~~es~~|Reverse recovery charge||-<br>~~| |~~<br>~~||~~<br>~~|~~<br>~~|~~|10.3<br>~~|~~<br>~~|~~<br>~~|~~|~~|~~<br>~~|}~~|μC<br>~~|}~~|
|IRRM<br>~~es~~<br>~~es~~|Reverse recovery current||-<br>~~| |~~<br>~~|~~<br>~~|~~|40<br>~~|~~<br>~~|~~|~~|}~~|A<br>~~|}~~|



1. Pulse width limited by safe operating area. 

2. Pulsed: pulse duration = 300 μs, duty cycle 1.5% 

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**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**Figure 2. Safe operating area for D²PAK and Figure 3. Thermal impedance for D²PAK and TO-220 TO-220** 

**==> picture [203 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
ID AM12634v1<br>(A)<br>100<br>10 10µs<br>100µs<br>1ms<br>1 Tj=150°C 10ms<br>Tc=25°C<br>Sinlge<br>0.1 alll pulse ED<br>0.1 1 10 100 VDS(V)<br>DS(on)<br>Operation in this area isLimited by max R<br>**----- End of picture text -----**<br>


## **Figure 4. Safe operating area for TO-247** 

## **Figure 5. Thermal impedance for TO-247** 

**==> picture [201 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
ID AM12636v1<br>(A)<br>100<br>10 10µs<br>100µs<br>1ms<br>1 Tj=150°C 10ms<br>Tc=25°C<br>Sinlge<br>0.1 lll pulse PUI Ei<br>0.1 1 10 100 VDS(V)<br>DS(on)<br>Operation in this area isLimited by max R<br>**----- End of picture text -----**<br>


## **Figure 6. Output characteristics** 

**==> picture [190 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
GIPG040420141156SA<br>ID<br>(A) VGS = 9, 10 V<br>80<br>VGS = 8 V<br>60 V GS  = 7 V<br>40<br>20<br>VGS = 6 V<br>0<br>0 5 10 15 20 VDS(V)<br>**----- End of picture text -----**<br>


## **Figure 7. Transfer characteristics** 

**==> picture [191 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
GIPG040420141218SA<br>ID<br>(A)<br>80 VDS= 25V<br>60<br>40<br>20<br>0<br>3 4 5 6 7 8 VGS(V)<br>**----- End of picture text -----**<br>


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**Electrical characteristics** 

## **Figure 8. Gate charge vs gate-source voltage** 

## **Figure 9. Static drain-source on-resistance** 

**==> picture [433 x 367] intentionally omitted <==**

**----- Start of picture text -----**<br>
VGS AM12639v1VDS RDS(on) AM12640v1<br>(V) VDD=520V (V) (Ω)<br>an Pic 0.088 | | ft ft ft<br>ID=15A 500 VGS=10V<br>12 VDS 0.076<br>400<br>a Pty 0.074 | lL a<br>| van {| | tet<br>8 300 0.072<br>PTL EY | | Pat<br>PT UTI YE 0.070 lel<br>200<br>4 PI [EE] 0.068 7 | | || ft<br>100<br>PAULL ELT 0.066 | | ft ft ft<br>0 VI IEE T TT I 0 0.064 ft | ft ft ft<br>0 20 40 60 80 Qg(nC) 0 5 10 15 20 25 ID(A)<br>Figure 10. Capacitance variations Figure 11. Output capacitance stored energy<br>C AM12641v1 Eoss AM12642v1<br>(pF) (µJ)<br>14<br>10000<br>12<br>1000 Ciss 10<br>8<br>100<br>6<br>Coss<br>4<br>10<br>2<br>Crss<br>1 Sa 0 Mr LLL ELLE LLL<br>0.1 1 10 100 VDS(V) 0 100 200 300 400 500 600 VDS(V)<br>**----- End of picture text -----**<br>


**Figure 12. Normalized gate threshold voltage vs temperature** 

**Figure 13. Normalized on-resistance vs temperature** 

**==> picture [433 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
VGS(th) AM05459v1 RDS(on) AM05460v1<br>(norm) (norm)<br>1.10 FP | | tt | te 2.1 || VGS = 10 V P|<br>ID = 250 µA ID = 15 A<br>1.9<br>1.00 PSS 1.7 | iy<br>1.5<br>HCERRCEE |  Eee<br>0.90 1.3<br>1.1<br>PEERS, HEE<br>0.80 0.9<br>Pt | | | | PN\ | 0.7 FEGZEEEE| irl/<br>0.70 Ft | | PIN 0.5 tT | | | | tT| tt<br>-50 -25 0 25 50 75 100 TJ(°C) -50 -25 0 25 50 75 100 TJ(°C)<br>**----- End of picture text -----**<br>


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**Electrical characteristics** 

**Figure 14. Source-drain diode forward characteristics** 

**Figure 15. Normalized V(BR)DSS vs temperature** 

**==> picture [423 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
VSD AM05461v1 V(BR)DSS AM10399v1<br>(V) TJ=-50°C (norm)<br>1.08<br>1.2 Ty UE CT TLL ELIL ID = 1mA A<br>1.06<br>1.0<br>1.04<br>a7 aaa lessee co<br>0.8 1.02<br>Ze am TJ=25°C PPT yr<br>Cane 1.00 POE Le<br>0.6<br>TJ=150°C<br>0.98<br>ean POP<br>0.4<br>0.96<br>0.2<br>pt 0.94 TH LLL<br>0 | [| | tt | ff tt 0.92 SCCEEEEE4000nn0n<br>0 10 20 30 40 50 ISD(A) -50 -25 0 25 50 75 100 TJ(°C)<br>**----- End of picture text -----**<br>


**Figure 16. Switching losses vs gate resistance[(1)]** 

**==> picture [191 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM12643v1<br>E<br>(μJ) Eon<br>ID=20A<br>600<br>VDD=400V<br>L=50µH<br>500<br>400<br>300 Eoff<br>200<br>100<br>0<br>0 10 20 30 40 RG(Ω)<br>**----- End of picture text -----**<br>


1. Eon including reverse recovery of a SiC diode. 

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**Test circuits** 

## **3 Test circuits** 

**==> picture [460 x 563] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 17. Switching times test circuit for  Figure 18. Gate charge test circuit<br>resistive load<br>VDD<br>12V 47kΩ<br>1kΩ<br>100nF<br>RL 2200 3.3<br>μF μF<br>VDD IG=CONST<br>VD Vi=20V=VGMAX 100Ω D.U.T.<br>VGS<br>2200<br>RG D.U.T. μF 2.7kΩ VG<br>PW<br>| = F 47kΩ<br>1kΩ<br>PW<br>AM01468v1 AM01469v1<br>pAli| rere<br>Figure 19. Test circuit for inductive load  Figure 20. Unclamped inductive load test circuit<br>switching and diode recovery times<br>L<br>A A A<br>D<br>FAST L=100μH VD<br>G D.U.T. DIODE 2200 3.3<br>S B 3.3 1000 μF μF VDD<br>25 Ω B B D μF μF VDD ID<br>G<br>RG S<br>Vi D.U.T.<br>Pw<br>AM01470v1 AM01471v1<br>atin att<br>Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform<br>Inductive Load Turn - off<br>Id<br>90%Vds 90%Id<br>td(v)<br>Vgs<br>90%Vgs on<br>Vgs(I(t ))<br>10%Vds 10%Id<br>Vds<br>tr(v) tf(i)<br>tc(off) AM05540v1<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com_ . ECOPACK[®] is an ST trademark. 

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**Package mechanical data** 

## **4.1 D[2] PAK, STB38N65M5** 

**==> picture [166 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 23. D²PAK (TO-263) drawing<br>**----- End of picture text -----**<br>


**==> picture [31 x 6] intentionally omitted <==**

**----- Start of picture text -----**<br>
0079457_T<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

**Table 9. D²PAK (TO-263) mechanical data** 

||**Table 9. D²PAK (TO-263) mechanical data(TO-263) mechanical dataTO-263) mechanical data) mechanical data mechanical data**|**Table 9. D²PAK (TO-263) mechanical data(TO-263) mechanical dataTO-263) mechanical data) mechanical data mechanical data**|**Table 9. D²PAK (TO-263) mechanical data(TO-263) mechanical dataTO-263) mechanical data) mechanical data mechanical data**|
|---|---|---|---|
|**Dim.**<br>~~a~~|**mm**<br>~~ee ee~~|||
||**Min.**<br>~~es~~|**Typ.**<br>~~es~~<br>~~ee ee~~|**Max.**<br>~~es~~<br>~~ee~~|
|A<br>~~a~~|4.40|~~ee ee~~|4.60<br>~~ee~~|
|A1<br>~~a~~|0.03||0.23|
|b<br>~~a~~|0.70||0.93|
|b2<br>~~a~~<br>~~Rs~~|1.14||1.70|
|c<br>~~Rs~~<br>~~Rs~~|0.45||0.60|
|c2<br>~~Rs~~<br>~~Rs~~|1.23||1.36|
|D<br>~~Rs~~<br>~~a~~|8.95||9.35|
|D1<br>~~a~~|7.50|||
|E<br>~~a~~|10||10.40|
|E1<br>~~a~~<br>~~Rs~~|8.50|||
|e<br>~~Rs~~<br>~~Rs~~||2.54||
|e1<br>~~Rs~~<br>~~Rs~~|4.88||5.28|
|H<br>~~Rs~~<br>~~a~~|15||15.85|
|J1<br>~~a~~|2.49||2.69|
|L<br>~~a~~|2.29||2.79|
|L1<br>~~a~~|1.27||1.40|
|L2<br>~~a~~<br>~~Rs~~|1.30||1.75|
|R<br>~~Rs~~||0.4||
|V2<br>~~Rs~~<br>~~a~~|0°||8°|



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**Package mechanical data** 

**==> picture [386 x 243] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 24. D²PAK footprint [(a)]<br>16.90<br>12.20 5.08<br>_— 1.60<br>o_ o<br>|<br>Co 3.50<br>9.75<br>Footprint<br>**----- End of picture text -----**<br>


a. All dimension are in millimeters 

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**Package mechanical data** 

## **4.2 TO-220, STP38N65M5** 

**==> picture [159 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 25. TO-220 type A drawing<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

**Table 10. TO-220 type A mechanical data** 

**mm Dim. Min. Typ. Max.** ~~es~~ A 4.40 4.60 ~~a ee ee~~ b 0.61 0.88 ~~a~~ b1 1.14 1.70 ~~a~~ c 0.48 0.70 ~~a~~ D 15.25 15.75 ~~Ge~~ D1 1.27 ~~Ge~~ E 10 10.40 ~~a~~ e 2.40 2.70 ~~a~~ e1 4.95 5.15 ~~a~~ F 1.23 1.32 ~~a~~ H1 6.20 6.60 ~~Ge~~ J1 2.40 2.72 ~~Ge~~ L 13 14 ~~a~~ L1 3.50 3.93 ~~a~~ L20 16.40 ~~a~~ L30 28.90 ~~a Ge~~ ∅P 3.75 3.85 Q 2.65 2.95 ~~Ge~~ 

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**Package mechanical data** 

## **4.3 TO-247, STW38N65M5** 

**==> picture [126 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 26. TO-247 drawing<br>**----- End of picture text -----**<br>


**==> picture [32 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
0075325_G<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

**Table 11. TO-247 mechanical data** 

||**Table 11. TO-247 mechanical data**|**Table 11. TO-247 mechanical data**|**Table 11. TO-247 mechanical data**|
|---|---|---|---|
|**Dim.**<br>~~a~~|**mm.**<br>~~a~~<br>~~ee~~|||
||**Min.**<br>~~a~~|**Typ.**<br>~~a~~<br>~~ee~~|**Max.**<br>~~a~~|
|A<br>~~a~~|4.85|~~ee~~|5.15|
|A1<br>~~a~~|2.20||2.60|
|b<br>~~a~~|1.0||1.40|
|b1<br>~~a~~|2.0||2.40|
|b2<br>~~a~~|3.0||3.40|
|c<br>~~a~~<br>~~es~~|0.40||0.80|
|D<br>~~es~~|19.85||20.15|
|E<br>~~es~~<br>~~a~~|15.45||15.75|
|e<br>~~a~~|5.30|5.45|5.60|
|L<br>~~a~~|14.20||14.80|
|L1<br>~~a~~|3.70||4.30|
|L2<br>~~a~~<br>~~es~~||18.50||
|∅P<br>~~es~~|3.55||3.65|
|∅R<br>~~es~~<br>~~a~~|4.50||5.50|
|S<br>~~a~~|5.30|5.50|5.70|



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**Packaging mechanical data** 

## **5 Packaging mechanical data** 

## **Figure 27. Tape** 

**==> picture [399 x 317] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 pitches cumulative<br>tolerance on tape +/- 0.2 mm<br>Top cover P0 D P2<br>T tape<br>H e | I<br>| / 000 00 000 0 00 E<br>F<br>K0 W<br>B1 B0<br>| H ) PRG<br>‘l Ld<br>For machine ref. only A0 P1 D1<br>including draft and<br>radii concentric around B0 ><br>User direction of feed<br>R<br>\a he e/* ¢, /¢ / % / % F/% F<br>BGs<br>es es es Se en ns Sn Sen 5<br>——_—_p»> Bending radius<br>User direction of feed<br>AM08852v1<br>**----- End of picture text -----**<br>


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**Packaging mechanical data** 

||**Figure 28. Reel**||||||
|---|---|---|---|---|---|---|
|||||||T|
||REEL DIMENSIONS||||||
||40mm min.||||||
||Access hole||||||
||At sl ot location<br>a<br>=||||||
||D<br>B<br>C<br>Q||||||
|A||||||N|
||||||||
||||||||
||Full radius<br>Tape slot|||||G measured at hub|
||in core for||||||
||tape start 25 mm min.<br>width|||||AM08851v2|
||**Table 12. D²PAK(TO-263) tape and reel mechanical data**|||**e and reel mechanical data**|||
|**Tape**<br>**Reel**<br>**Dim.**<br>**mm**<br>**Dim.**<br>**mm**<br>**Min.**<br>**Max.**<br>**Min.**<br>**Max.**<br>A0<br>10.5<br>10.7<br>A<br>330<br>B0<br>15.7<br>15.9<br>B<br>1.5<br>~~eo~~<br>~~ee~~<br>~~eses~~<br>~~aee~~|||||||
|D<br>1.5<br>1.6<br>C<br>12.8<br>13.2<br>~~ee~~|||||||
|D1<br>~~a~~|1.59<br>1.61<br>D<br>20.2||||||
|E|1.65<br>1.85<br>G<br>24.4|||||26.4|
|F|11.4<br>11.6<br>N<br>100||||||
|K0<br>4.8<br>5.0<br>T<br>30.4<br>P0<br>3.9<br>4.1<br>~~aee~~|||||||
|P1<br>11.9<br>12.1<br>Base qty<br>1000<br>~~aee~~|||||||
|P2<br>1.9<br>2.1<br>Bulk qty<br>1000<br>R<br>50<br>T<br>0.25<br>0.35<br>W<br>23.7<br>24.3<br>~~aee~~<br>~~ee~~<br>~~ee~~<br>~~ee ee ee~~<br>~~eeee~~<br>~~ee~~|||||||



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**Revision history** 

## **6 Revision history** 

**Table 13. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|22-Feb-2012|1|First release.|
|21-Jun-2012|2|Document status changed from preliminary data to production data.<br>Added_Section 2.1: Electrical characteristics (curves)_.|
|05-Mar-2013|3|Added dv/dt value on_Table 2: Absolute maximum ratings_.|
|09-Apr-2014|4|– The part number STF38N65M5 has been moved to a separate<br>datasheet<br>– Minor text changes|



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## Links

- [View this product on Novapart](https://novapart.co/products/STB38N65M5/power-mosfet-n-channel-650-v-30-a-0073-ohm-to-263)
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- [Supplier page](https://es.farnell.com/stmicroelectronics/stb38n65m5/mosfet-n-ch-650v-30a-to-263/dp/2784045RL)
---

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