# Power MOSFET, N Channel, 650 V, 20 A, 0.15 ohm, TO-263 (D2PAK), Surface Mount

![Product image](https://novapart.co/image/farnell:3129916/)

**URL**: https://novapart.co/products/STB28N65M2/power-mosfet-n-channel-650-v-20-a-015-ohm-to-263
**SKU**: STB28N65M2
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.4300
**Stock**: 500+
**Lead Time**: 127 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.15ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V;

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | MDmesh M2 |
| Qualification | - |
| Power Dissipation | 170W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-263 (D2PAK) |
| Drain Source Voltage Vds | 650V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 20A |
| Drain Source On State Resistance | 0.15ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3129916/)

**STB28N65M2, STF28N65M2, STP28N65M2, STW28N65M2** N-channel 650 V, 0.15 Ω typ., 20 A MDmesh™ M2 Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247 packages **Datasheet** - **preliminary data Features** TAB **Order codes VDS RDS(on) max ID** STB28N65M2 1 3 3 STF28N65M2 1[2] 650 V 0.18 Ω 20 A **D[2] PAK** STP28N65M2 **TO-220FP** STW28N65M2 TAB • Extremely low gate charge • Excellent output capacitance (Coss) profile 3 3 • 100% avalanche tested 2 2 1 1 « **TO-220** « **TO-247** ~~(=O~~ • Zener-protected **Figure 1. Internal schematic diagram Applications** 

**==> picture [17 x 8] intentionally omitted <==**

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, TAB<br>**----- End of picture text -----**<br>


- Switching applications 

## **Description** 

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. 

**==> picture [33 x 5] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM15572v1<br>**----- End of picture text -----**<br>


**Table 1. Device summary** 

|**Order codes**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STB28N65M2|28N65M2|D2PAK|Tape and reel|
|STF28N65M2||TO-220FP|Tube|
|STP28N65M2||TO-220||
|STW28N65M2||TO-247||



December 2014 DocID027256 Rev 1 

1/22 

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 

_www.st.com_ 

**Contents** 

**STB28N65M2, STF28N65M2, STP28N65M2, STW28N65M2** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10**|
||4.1<br>D²PAK, STB28N65M2  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10|
||4.2<br>TO-220FP, STF28N65M2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13|
||4.3<br>TO-220, STP28N65M2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15|
||4.4<br>TO-247, STW28N65M2  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17|
|**5**|**Packing mechanical data  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19**|
|**6**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21**|



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**STB28N65M2, STF28N65M2, STP28N65M2, STW28N65M2** 

**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2. Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Value**|**Unit**|
|---|---|---|---|---|
|||**D2PAK,**<br>**TO-220, TO-247**|**TO-220FP**||
|VGS|Gate-source voltage|± 25||V|
|ID|Drain current (continuous) at TC= 25 °C|20|20(1)|A|
|ID|Drain current (continuous) at TC= 100 °C|13|13(1)|A|
|IDM<br>(2)|Drain current (pulsed)|80||A|
|PTOT|Total dissipation at TC= 25 °C|170|30|W|
|VISO|Insulation withstand voltage (RMS) from all<br>three leads to external heat sink<br>(t = 1 s; TC= 25 °C)||2500|V|
|dv/dt(3)|Peak diode recovery voltage slope|15||V/ns|
|dv/dt(4)|MOSFET dv/dt ruggedness|50|||
|Tstg|Storage temperature|- 55 to 150||°C|
|Tj|Max. operating junction temperature|150|||



1. Current limited by package. 

2. Pulse width limited by safe operating area. 

3. ISD ≤ 20 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD=520 V 

4. VDS ≤ 520 V 

**Table 3. Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Value**|**Value**|**Value**|**Unit**|
|---|---|---|---|---|---|---|
|||**D2PAK**|**TO-220FP**|**TO-220**|**TO-247**||
|Rthj-case|Thermal resistance<br>junction-case max|0.74|4.17|0.74||°C/W|
|Rthj-pcb<br>(1)|Thermal resistance<br>junction-pcb max|30||||°C/W|
|Rthj-amb|Thermal resistance<br>junction-ambient max||62.5||50|°C/W|



1. When mounted on 1 inch² FR-4, 2 Oz copper board 

**Table 4. Avalanche characteristics** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|IAR|Avalanche current, repetitive or not<br>repetitive (pulse width limited by Tjmax)|2.4|A|
|EAS|Single pulse avalanche energy (starting<br>Tj= 25°C, ID= IAR; VDD= 50 V)|760|mJ|
|DocID027256 Rev 1<br>3/22||||



**STB28N65M2, STF28N65M2, STP28N65M2, STW28N65M2** 

**Electrical characteristics** 

## **2 Electrical characteristics** 

(TC = 25 °C unless otherwise specified) 

**Table 5. On /off states** 

|||**Table 5. On /off states**|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|V(BR)DSS|Drain-source<br>breakdown voltage|VGS= 0, ID= 1 mA|650|||V|
|IDSS|Zero gate voltage<br>drain current|VGS= 0, VDS= 650 V|||1|µA|
|||VGS= 0, VDS= 650 V<br>TC= 125 °C|||100|µA|
|IGSS|Gate-body leakage<br>current|VDS= 0, VGS= ± 25 V|||±10|µA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 µA|2|3|4|V|
|RDS(on)|Static drain-source<br>on-resistance|VGS= 10 V, ID= 10 A||0.15|0.18|Ω|



**Table 6. Dynamic** 

|||**Table 6. Dynamic**|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|Ciss|Input capacitance|VDS= 100 V, f = 1 MHz,<br>VGS= 0|-|1440|-|pF|
|Coss|Output capacitance||-|60|-|pF|
|Crss|Reverse transfer<br>capacitance||-|2|-|pF|
|Coss eq<br>(1)|Equivalent output<br>capacitance|VGS= 0, VDS= 0 to 520 V|-|307|-|pF|
|RG|Intrinsic gate<br>resistance|f = 1 MHz open drain|-|4.9|-|Ω|
|Qg|Total gate charge|VDD= 520 V, ID= 20 A,<br>VGS= 10 V<br>(see_Figure 19_)|-|35|-|nC|
|Qgs|Gate-source charge||-|6|-|nC|
|Qgd|Gate-drain charge||-|15|-|nC|



1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 

**Table 7. Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delay time|VDD= 325 V, ID= 10 A,<br>RG= 4.7Ω,VGS= 10 V<br>(see_Figure 18_and_Figure 23_)|-|13.4|-|ns|
|tr|Rise time||-|10|-|ns|
|td(off)|Turn-off delay time||-|59|-|ns|
|tf|Fall time||-|8.8|-|ns|



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**Electrical characteristics** 

**Table 8. Source drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD|Source-drain current||-||20|A|
|ISDM (1)|Source-drain current (pulsed)||-||80|A|
|VSD (2)|Forward on voltage|VGS= 0, ISD= 20 A|-||1.6|V|
|trr|Reverse recovery time|ISD= 20 A, di/dt = 100 A/µs<br>VDD= 60 V (see_Figure 20_)|-|384||ns|
|Qrr|Reverse recovery charge||-|5.7||µC|
|IRRM|Reverse recovery current||-|30||A|
|trr|Reverse recovery time|ISD= 20 A, di/dt = 100 A/µs<br>VDD= 60 V, Tj= 150 °C<br>(see_Figure 20_)|-|544||ns|
|Qrr|Reverse recovery charge||-|8.2||µC|
|IRRM|Reverse recovery current||-|30.5||A|



1. Pulse width limited by safe operating area. 

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% 

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**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**Figure 2. Safe operating area for D[2] PAK and Figure 3. Thermal impedance for D[2] PAK and TO-220 TO-220** 

**Figure 4. Safe operating area for TO-220FP** 

**Figure 5. Thermal impedance for TO-220FP** 

**Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247** 

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**Electrical characteristics** 

**Figure 8. Output characteristics** 

**Figure 9. Transfer characteristics** 

**Figure 10. Normalized gate threshold voltage vs. temperature** 

**Figure 11. Normalized V(BR)DSS vs. temperature** 

**==> picture [438 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
VGS(th) GIPD180920141442FSR V(BR)DSS GIPD180920141448FSR<br>(norm) (norm)<br>1.1 ID = 250 µA 1.08 ID= 1mA<br>1.0 1.04<br>0.9 1.00<br>0.8 0.96<br>0.7 0.92<br>0.6 0.88<br>-75 -25 25 75 125 Tj(°C) -75 -25 25 75 125 Tj(°C)<br>**----- End of picture text -----**<br>


**Figure 12. Static drain-source on-resistance** 

**Figure 13. Normalized on-resistance vs. temperature** 

**==> picture [212 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
GIPD180920141459FSR<br>RDS(on)<br>(norm)<br>2.2<br>VGS= 10V<br>1.8<br>1.4<br>1<br>0.6<br>0.2<br>-75 -25 25 75 125 Tj(°C)<br>**----- End of picture text -----**<br>


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**Electrical characteristics** 

**Figure 14. Gate charge vs gate-source voltage** 

**Figure 16. Output capacitance stored energy** 

**Figure 15. Capacitance variations** 

**Figure 17. Source-drain diode forward characteristics** 

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**STB28N65M2, STF28N65M2, STP28N65M2, STW28N65M2** 

**Test circuits** 

## **3 Test circuits** 

**Figure 18. Switching times test circuit for Figure 19. Gate charge test circuit resistive load** 

**==> picture [459 x 158] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDD<br>12V 47kΩ<br>1kΩ<br>100nF<br>RL 2200 3.3<br>μF μF<br>VDD IG=CONST<br>VD Vi=20V=VGMAX 100Ω D.U.T.<br>VGS<br>RG D.U.T. 2200μF 2.7kΩ VG<br>PW<br>47kΩ<br>1kΩ<br>PW<br>AM01468v1 AM01469v1<br>**----- End of picture text -----**<br>


**Figure 20. Test circuit for inductive load Figure 21. Unclamped inductive load test circuit switching and diode recovery times** 

**==> picture [462 x 337] intentionally omitted <==**

**----- Start of picture text -----**<br>
A A A L<br>D<br>FAST L=100μH VD<br>G D.U.T. DIODE 2200 3.3<br>S B 3.3 1000 μF μF VDD<br>25 Ω B B D μF μF VDD ID<br>G<br>RG S<br>Vi D.U.T.<br>Pw<br>AM01470v1 AM01471v1<br>Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform<br>�������� ton toff<br>�� tdon tr tdoff tf<br>90% 90%<br>���<br>10%<br>�� 0 10% VDS<br>��� ��� 90%<br>VGS<br>��������� 0 10% AM01473v1<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com_ . ECOPACK[®] is an ST trademark. 

## **4.1 D** ² **PAK, STB28N65M2** 

**==> picture [124 x 13] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 24. D [2] PAK drawing<br>**----- End of picture text -----**<br>


**==> picture [405 x 442] intentionally omitted <==**

**----- Start of picture text -----**<br>
���������<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

**Table 9. D²PAK mechanical data** 

||**Table 9. D²PAK mechanical data**|**Table 9. D²PAK mechanical data**|**Table 9. D²PAK mechanical data**|
|---|---|---|---|
|**Dim.**|**mm**|||
||**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|A1|0.03||0.23|
|b|0.70||0.93|
|b2|1.14||1.70|
|c|0.45||0.60|
|c2|1.23||1.36|
|D|8.95||9.35|
|D1|7.50|7.75|8.00|
|D2|1.10|1.30|1.50|
|E|10||10.40|
|E1|8.50|8.70|8.90|
|E2|6.85|7.05|7.25|
|e||2.54||
|e1|4.88||5.28|
|H|15||15.85|
|J1|2.49||2.69|
|L|2.29||2.79|
|L1|1.27||1.40|
|L2|1.30||1.75|
|R||0.4||
|V2|0°||8°|



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**Package mechanical data** 

**==> picture [405 x 363] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 25. D [2] PAK footprint  [(a)]<br>���������<br>**----- End of picture text -----**<br>


a. All dimensions are in millimeters 

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**Package mechanical data** 

## **4.2 TO-220FP, STF28N65M2** 

**==> picture [138 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 26. TO-220FP drawing<br>**----- End of picture text -----**<br>


**==> picture [405 x 577] intentionally omitted <==**

**----- Start of picture text -----**<br>
7012510_Rev_K_B<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

**Table 10. TO-220FP mechanical data** 

||**Table 10. TO-220FP mechanical data**|**Table 10. TO-220FP mechanical data**|**Table 10. TO-220FP mechanical data**|
|---|---|---|---|
|**Dim.**|**mm**|||
||**Min.**|**Typ.**|**Max.**|
|A|4.4||4.6|
|B|2.5||2.7|
|D|2.5||2.75|
|E|0.45||0.7|
|F|0.75||1|
|F1|1.15||1.70|
|F2|1.15||1.70|
|G|4.95||5.2|
|G1|2.4||2.7|
|H|10||10.4|
|L2||16||
|L3|28.6||30.6|
|L4|9.8||10.6|
|L5|2.9||3.6|
|L6|15.9||16.4|
|L7|9||9.3|
|Ø|3||3.2|



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**Package mechanical data** 

## **4.3 TO-220, STP28N65M2** 

**==> picture [159 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 27. TO-220 type A drawing<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

**Table 11. TO-220 type A mechanical data** 

||**Table 11. TO-220 type A mechanical data**|**Table 11. TO-220 type A mechanical data**|**Table 11. TO-220 type A mechanical data**|
|---|---|---|---|
|**Dim.**|**mm**|||
||**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|b|0.61||0.88|
|b1|1.14||1.70|
|c|0.48||0.70|
|D|15.25||15.75|
|D1||1.27||
|E|10||10.40|
|e|2.40||2.70|
|e1|4.95||5.15|
|F|1.23||1.32|
|H1|6.20||6.60|
|J1|2.40||2.72|
|L|13||14|
|L1|3.50||3.93|
|L20||16.40||
|L30||28.90||
|∅P|3.75||3.85|
|Q|2.65||2.95|



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**Package mechanical data** 

## **4.4 TO-247, STW28N65M2** 

**==> picture [126 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 28. TO-247 drawing<br>**----- End of picture text -----**<br>


**==> picture [405 x 397] intentionally omitted <==**

**----- Start of picture text -----**<br>
0075325_H<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

**Table 12. TO-247 mechanical data** 

||**Table 12. TO-247 mechanical data**|**Table 12. TO-247 mechanical data**|**Table 12. TO-247 mechanical data**|
|---|---|---|---|
|**Dim.**|**mm.**|||
||**Min.**|**Typ.**|**Max.**|
|A|4.85||5.15|
|A1|2.20||2.60|
|b|1.0||1.40|
|b1|2.0||2.40|
|b2|3.0||3.40|
|c|0.40||0.80|
|D|19.85||20.15|
|E|15.45||15.75|
|e|5.30|5.45|5.60|
|L|14.20||14.80|
|L1|3.70||4.30|
|L2||18.50||
|∅P|3.55||3.65|
|∅R|4.50||5.50|
|S|5.30|5.50|5.70|



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**Packing mechanical data** 

## **5 Packing mechanical data** 

## **Figure 29. Tape for D[2] PAK** 

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**Packing mechanical data** 

## **Figure 30. Reel for D[2] PAK** 

**Table 13. D²PAK tape and reel mechanical data** 

|**Tape**|**Tape**|**Tape**|**Reel**|**Reel**|**Reel**|
|---|---|---|---|---|---|
|**Dim.**|**mm**||**Dim.**|**mm**||
||**Min.**|**Max.**||**Min.**|**Max.**|
|A0|10.5|10.7|A||330|
|B0|15.7|15.9|B|1.5||
|D|1.5|1.6|C|12.8|13.2|
|D1|1.59|1.61|D|20.2||
|E|1.65|1.85|G|24.4|26.4|
|F|11.4|11.6|N|100||
|K0|4.8|5.0|T||30.4|
|P0|3.9|4.1||||
|P1|11.9|12.1|Base qty||1000|
|P2|1.9|2.1|Bulk qty||1000|
|R|50|||||
|T|0.25|0.35||||
|W|23.7|24.3||||



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**Revision history** 

## **6 Revision history** 

**Table 14. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|09-Dec-2014|1|First release.|



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## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

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ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2014 STMicroelectronics – All rights reserved 

22/22 DocID027256 Rev 1 



## Links

- [View this product on Novapart](https://novapart.co/products/STB28N65M2/power-mosfet-n-channel-650-v-20-a-015-ohm-to-263)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/stb28n65m2/mosfet-n-ch-650v-20a-170w-to-263/dp/3129916)
---

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> [Request a quote](https://novapart.co/quote/) — it's free and there's no
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