# Power MOSFET, N Channel, 600 V, 21 A, 0.13 ohm, TO-263 (D2PAK), Surface Mount
**URL**: https://novapart.co/products/STB25NM60ND/power-mosfet-n-channel-600-v-21-a-013-ohm-to-263
**SKU**: STB25NM60ND
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €4.0100
**Stock**: 10+
## Specifications
| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | FDmesh II |
| Power Dissipation | 160W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 160W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.13ohm |
| Transistor Case Style | TO-263 (D2PAK) |
| Drain Source Voltage Vds | 600V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 21A |
| Drain Source On State Resistance | 0.13ohm |
| Gate Source Threshold Voltage Max | 4V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2098132/)
**==> picture [61 x 39] intentionally omitted <==**
## **STx25NM60ND** N-channel 600 V, 0.13 Ω, 21 A FDmesh™ II Power MOSFET (with fast diode) in D[2] PAK, TO-220FP, TO-220, TO-247
## **Features**
|**Type**|**VDSS@**
**TJMAX**|**RDS(on)max**|**ID**|
|---|---|---|---|
|STB25NM60ND
STF25NM60ND
STP25NM60ND
STW25NM60ND|650 V|0.16Ω|21 A
21 A(1)
21 A
21 A|
1. Limited only by maximum temperature allowed
- The worldwide best RDS(on)*area amongst the fast recovery diode devices
**==> picture [170 x 141] intentionally omitted <==**
**----- Start of picture text -----**
TAB
3
1 3
2
D [2] PAK 1
TO-220FP
TAB
3
1 2 2 3
1
TO-220 TO-247
**----- End of picture text -----**
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- Extremely high dv/dt and avalanche capabilities
## **Application**
- Switching applications
## **Description**
These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift converters.
## **Figure 1. Internal schematic diagram**
**==> picture [220 x 172] intentionally omitted <==**
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**Table 1. Device summary**
|**Order codes**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STB25NM60ND|25NM60ND|D²PAK|Tape and reel|
|STF25NM60ND|25NM60ND|TO-220FP|Tube|
|STP25NM60ND|25NM60ND|TO-220|Tube|
|STW25NM60ND|25NM60ND|TO-247|Tube|
1/21
November 2011
Doc ID 14167 Rev 5
_www.st.com_
**Contents**
**STx25NM60ND**
|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10**|
|**5**|**Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18**|
|**6**|**Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20**|
2/21
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**STx25NM60ND**
**Electrical ratings**
## **1 Electrical ratings**
## **Table 2. Absolute maximum ratings**
|**Table 2.**|**Absolute maximum ratings**||||
|---|---|---|---|---|
|**Symbol**|**Parameter**|**Value**||**Unit**|
|||**D2PAK, TO-220,**
**TO-247**|**TO-220FP**||
|VDS|Drain-source voltage|600||V|
|VGS|Gate-source voltage|±25||V|
|ID|Drain current (continuous) at TC= 25 °C|21|21(1)|A|
|ID|Drain current (continuous) at TC= 100 °C|13|13(1)|A|
|IDM (2)|Drain current (pulsed)|84|84(1)|A|
|PTOT|Total dissipation at TC= 25 °C|160|40|W|
|dv/dt(3)|Peak diode recovery voltage slope|40||V/ns|
|Viso|Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t=1 s;TC=25 °C)||2500|V|
|Tstg|Storage temperature|–55 to 150||°C|
|TJ|Max. operating junction temperature|150||°C|
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤ 21 A, di/dt ≤ 600 A/µs, VDD = 80% V(BR)DSS
## **Table 3. Thermal data**
|**Table 3.**|**Thermal data**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**D²PAK**|**TO-220FP**|**TO-220**|**TO-247**|**Unit**|
|Rthj-case|Thermal resistance junction-
case max|0.78|3.1|0.78||°C/W|
|Rthj-amb|Thermal resistance junction-
ambient max||62.5||50|°C/W|
|Rthj-pcb
(1)|Thermal resistance junction-
ambient max|30||||°C/W|
1. When mounted on 1inch² FR-4 board, 2 oz Cu
## **Table 4. Avalanche characteristics**
|**Table 4.**|**Avalanche characteristics**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Max value**|**Unit**|
|IAS
|Avalanche current, repetitive or not-repetitive
(pulse width limited by TJmax)|10|A|
|EAS
|Single pulse avalanche energy
(starting TJ= 25 °C, ID= IAS, VDD= 50 V)|850|mJ|
3/21
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**STx25NM60ND**
**Electrical characteristics**
## **2 Electrical characteristics**
(TCASE=25 °C unless otherwise specified).
## **Table 5. On/off states**
|**Table 5.**|**On/off states**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Value**|||**Unit**|
||||**Min.**|**Typ.**|**Max.**||
|V(BR)DSS|Drain-source
breakdown voltage|ID= 1 mA, VGS= 0|600|||V|
|dv/dt(1)|Drain source voltage slope|VDD= 480 V, ID= 21 A,
VGS= 10 V|48|||V/ns|
|IDSS|Zero gate voltage
drain current (VGS= 0)|VDS= 600 V
VDS= 600 V @TC= 125 °C|||1
100|µA
µA|
|IGSS|Gate-body leakage
current (VDS= 0)|VGS= ± 20 V|||±100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 µA|3|4|5|V|
|RDS(on)|Static drain-source on
resistance|VGS= 10 V, ID= 10.5 A||0.13|0.16|Ω|
1. Characteristic value at turn off on inductive load.
**Table 6. Dynamic**
|**Table 6.**|**Dynamic**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|gfs
(1)|Forward transconductance|VDS= 15 V,ID= 10.5 A|-|17|-|S|
|Ciss
Coss
Crss|Input capacitance
Output capacitance
Reverse transfer
capacitance|VDS= 50 V, f = 1 MHz,
VGS= 0|-|2400
150
15|-|pF
pF
pF|
|Coss eq.
(2)|Equivalent output
capacitance|VGS= 0, VDS= 0 to 480 V|-|320|-|pF|
|td(on)
tr
td(off)
tf|Turn-on delay time
Rise time
Turn-off delay time
Fall time|VDD= 300 V, ID= 10.5 A
RG= 4.7ΩVGS= 10 V
_(see Figure 23),_
_(see Figure 18)_|-|60
30
50
40|-|ns
ns
ns
ns|
|Qg
Qgs
Qgd|Total gate charge
Gate-source charge
Gate-drain charge|VDD= 480 V, ID= 21 A,
VGS= 10 V,
_(see Figure 19)_|-|80
15
40|-|nC
nC
nC|
|Rg|Gate input resistance|f=1 MHz gate DC bias=0
Test signal level = 20 mV
open drain|-|1.6|-|Ω|
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS
4/21
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**STx25NM60ND**
**Electrical characteristics**
## **Table 7. Source drain diode**
|**Table 7.**|**Source drain diode**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|ISD
ISDM (1)|Source-drain current
Source-drain current (pulsed)||-||21
84|A
A|
|VSD (2)|Forward on voltage|ISD= 21 A, VGS= 0|-||1.3|V|
|trr
Qrr
IRRM|Reverse recovery time
Reverse recovery charge
Reverse recovery current|ISD= 21 A, VDD= 60 V
di/dt=100 A/µs
_(see Figure 20)_|-|160
1
15||ns
µC
A|
|trr
Qrr
IRRM|Reverse recovery time
Reverse recovery charge
Reverse recovery current|ISD= 21 A,VDD= 60 V
di/dt=100 A/µs,
TJ= 150 °C
_(see Figure 20)_|-|230
2
19||ns
µC
A|
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
5/21
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**STx25NM60ND**
**Electrical characteristics**
## **2.1 Electrical characteristics (curves)**
**Figure 2. Safe operating area for D²PAK and Figure 3. Thermal impedance for D²PAK and TO-220 TO-220**
**==> picture [169 x 167] intentionally omitted <==**
**==> picture [172 x 167] intentionally omitted <==**
**Figure 4. Safe operating area for TO-220FP**
**Figure 5. Thermal impedance for TO-220FP**
**==> picture [169 x 169] intentionally omitted <==**
**==> picture [173 x 167] intentionally omitted <==**
**Figure 6. Safe operating area for TO-247**
**Figure 7. Thermal impedance for TO-247**
**==> picture [169 x 169] intentionally omitted <==**
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**Electrical characteristics**
## **Figure 8. Output characteristics**
## **Figure 9. Transfer characteristics**
**==> picture [173 x 167] intentionally omitted <==**
**==> picture [174 x 169] intentionally omitted <==**
**Figure 10. Transconductance**
**Figure 11. Static drain-source on resistance**
**==> picture [177 x 169] intentionally omitted <==**
**==> picture [179 x 169] intentionally omitted <==**
**Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations**
**==> picture [194 x 168] intentionally omitted <==**
**==> picture [174 x 167] intentionally omitted <==**
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**STx25NM60ND**
**Electrical characteristics**
**Figure 14. Normalized gate threshold voltage vs temperature**
**==> picture [186 x 167] intentionally omitted <==**
**Figure 16. Source-drain diode forward characteristics**
**==> picture [183 x 171] intentionally omitted <==**
**Figure 15. Normalized on resistance vs temperature**
**==> picture [183 x 169] intentionally omitted <==**
**Figure 17. Normalized BVDSS vs temperature**
**==> picture [187 x 170] intentionally omitted <==**
8/21
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**STx25NM60ND**
**Test circuits**
## **3 Test circuits**
**Figure 18. Switching times test circuit for Figure 19. Gate charge test circuit resistive load**
**==> picture [450 x 148] intentionally omitted <==**
**Figure 20. Test circuit for inductive load Figure 21. Unclamped inductive load test switching and diode recovery times circuit**
**==> picture [447 x 144] intentionally omitted <==**
**Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform**
**==> picture [185 x 152] intentionally omitted <==**
**==> picture [197 x 154] intentionally omitted <==**
9/21
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**STx25NM60ND**
**Package mechanical data**
## **4 Package mechanical data**
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.
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**STx25NM60ND**
**Package mechanical data**
**Table 8. D²PAK (TO-263) mechanical data**
|**Dim.**|**mm**|**mm**|**mm**|
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|A1|0.03||0.23|
|b|0.70||0.93|
|b2|1.14||1.70|
|c|0.45||0.60|
|c2|1.23||1.36|
|D|8.95||9.35|
|D1|7.50|||
|E|10||10.40|
|E1|8.50|||
|e||2.54||
|e1|4.88||5.28|
|H|15||15.85|
|J1|2.49||2.69|
|L|2.29||2.79|
|L1|1.27||1.40|
|L2|1.30||1.75|
|R||0.4||
|V2|0°||8°|
11/21
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**STx25NM60ND**
**Package mechanical data**
**==> picture [173 x 11] intentionally omitted <==**
**----- Start of picture text -----**
Figure 24. D²PAK (TO-263) drawing
**----- End of picture text -----**
**==> picture [405 x 320] intentionally omitted <==**
**----- Start of picture text -----**
0079457_S
**----- End of picture text -----**
## **Figure 25. D²PAK footprint[(a)]**
**==> picture [405 x 232] intentionally omitted <==**
**----- Start of picture text -----**
16.90
12.20 5.08
1.60
3.50
9.75
Footprint
**----- End of picture text -----**
**==> picture [126 x 7] intentionally omitted <==**
**----- Start of picture text -----**
a. All dimension are in millimeters
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**STx25NM60ND**
**Package mechanical data**
## **Table 9. TO-220FP mechanical data**
|**Dim.**|**mm**
**Min.**
**Typ.**
**Max.**|**mm**
**Min.**
**Typ.**
**Max.**|**mm**
**Min.**
**Typ.**
**Max.**|
|---|---|---|---|
|||**Typ.**|**Max.**|
|A|4.4||4.6|
|B|2.5||2.7|
|D|2.5||2.75|
|E|0.45||0.7|
|F|0.75||1|
|F1|1.15||1.70|
|F2|1.15||1.70|
|G|4.95||5.2|
|G1|2.4||2.7|
|H|10||10.4|
|L2||16||
|L3|28.6||30.6|
|L4|9.8||10.6|
|L5|2.9||3.6|
|L6|15.9||16.4|
|L7|9||9.3|
|Dia|3||3.2|
## **TO-220FP drawing**
**==> picture [405 x 265] intentionally omitted <==**
**----- Start of picture text -----**
L7
E
A
B
D
Dia
L5
L6
F1 F2
F
H G
G1
L2 L4
L3
7012510_Rev_K
**----- End of picture text -----**
**==> picture [271 x 8] intentionally omitted <==**
**----- Start of picture text -----**
Doc ID 14167 Rev 5 13/21
**----- End of picture text -----**
**STx25NM60ND**
**Package mechanical data**
**Table 10. TO-220 type A mechanical data**
|**Dim.**|**mm**|**mm**|**mm**|
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|b|0.61||0.88|
|b1|1.14||1.70|
|c|0.48||0.70|
|D|15.25||15.75|
|D1||1.27||
|E|10||10.40|
|e|2.40||2.70|
|e1|4.95||5.15|
|F|1.23||1.32|
|H1|6.20||6.60|
|J1|2.40||2.72|
|L|13||14|
|L1|3.50||3.93|
|L20||16.40||
|L30||28.90||
|∅P|3.75||3.85|
|Q|2.65||2.95|
14/21
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**STx25NM60ND**
**Package mechanical data**
## **Figure 26. TO-220 type A drawing**
**==> picture [405 x 383] intentionally omitted <==**
**----- Start of picture text -----**
0015988_typeA_Rev_S
**----- End of picture text -----**
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**STx25NM60ND**
**Package mechanical data**
**Table 11. TO-247 mechanical data**
|**Dim.**|**mm.**|**mm.**|**mm.**|
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.85||5.15|
|A1|2.20||2.60|
|b|1.0||1.40|
|b1|2.0||2.40|
|b2|3.0||3.40|
|c|0.40||0.80|
|D|19.85||20.15|
|E|15.45||15.75|
|e|5.30|5.45|5.60|
|L|14.20||14.80|
|L1|3.70||4.30|
|L2||18.50||
|∅P|3.55||3.65|
|∅R|4.50||5.50|
|S|5.30|5.50|5.70|
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**STx25NM60ND**
**Package mechanical data**
**==> picture [133 x 11] intentionally omitted <==**
**----- Start of picture text -----**
Figure 27. TO-247 drawing
**----- End of picture text -----**
**==> picture [400 x 394] intentionally omitted <==**
**----- Start of picture text -----**
0075325_G
**----- End of picture text -----**
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**STx25NM60ND**
**Packing mechanical data**
## **5 Packing mechanical data**
**Table 12. D²PAK (TO-263) tape and reel mechanical data**
||**Tape**|**Tape**||**Reel**|**Reel**|
|---|---|---|---|---|---|
|**Dim.**|**mm**||**Dim.**|**mm**||
||**Min.**|**Max.**||**Min.**|**Max.**|
|A0|10.5|10.7|A||330|
|B0|15.7|15.9|B|1.5||
|D|1.5|1.6|C|12.8|13.2|
|D1|1.59|1.61|D|20.2||
|E|1.65|1.85|G|24.4|26.4|
|F|11.4|11.6|N|100||
|K0|4.8|5.0|T||30.4|
|P0|3.9|4.1||||
|P1|11.9|12.1||Base qty|1000|
|P2|1.9|2.1||Bulk qty|1000|
|R|50|||||
|T|0.25|0.35||||
|W|23.7|24.3||||
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**Packing mechanical data**
## **Figure 28. Tape**
**==> picture [353 x 317] intentionally omitted <==**
**----- Start of picture text -----**
10 pitches cumulative
tolerance on tape +/- 0.2 mm
T i e Top covertape P0 D _ P2
| / C00 G8G 8000 8 00 E
F
K0 W
B0
He s an bo e felloie n di L ne lli ae ll i e t
A0 P1 D1
——
User direction of feed
R
ra$/¢l e$¢) s/% $/% al f p]/ a% les l e/4 %s llr eal :
crereles Se tara Se Se Se |
$< Bending radius
User direction of feed
AM08852v2
**----- End of picture text -----**
## **Figure 29. Reel**
**==> picture [377 x 249] intentionally omitted <==**
**----- Start of picture text -----**
T
REEL DIMENSIONS
40mm min.
Access hole
|. At sl ot location
B
D
C
N
A
Full radius Tape slot G measured at hub
in core for
tape start 25 mm min.
width
AM08851v2
**----- End of picture text -----**
Doc ID 14167 Rev 5 19/21 ~~BM~~
**STx25NM60ND**
**Revision history**
## **6 Revision history**
## **Table 13. Document revision history**
|**Date**|**Revision**|**Changes**|
|---|---|---|
|15-Nov-2007|1|First release.|
|22-Jan-2008|2|Document status promoted from target specification to
preliminary data.|
|08-Apr-2008|3|– Updated_Table 3: Thermal data on page 3_;
– Document status promoted from preliminary data to
datasheet.|
|03-Mar-2009|4|Qgvalue has been updated.|
|28-Nov-2011|5|Updated_Section 4: Package mechanical data_and_Section 5:_
_Packing mechanical data_.
Minor text changes.|
20/21
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**STx25NM60ND**
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21/21
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## Links
- [View this product on Novapart](https://novapart.co/products/STB25NM60ND/power-mosfet-n-channel-600-v-21-a-013-ohm-to-263)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/stmicroelectronics/stb25nm60nd/mosfet-n-ch-600v-21a-d2pak/dp/2098132)
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