# Power MOSFET, N Channel, 600 V, 10 A, 0.15 ohm, TO-263 (D2PAK), Surface Mount

![Product image](https://novapart.co/image/farnell:1751989/)

**URL**: https://novapart.co/products/STB23NM60ND/power-mosfet-n-channel-600-v-10-a-015-ohm-to-263
**SKU**: STB23NM60ND
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.7800
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Power Dissipation | 150W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 150W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.15ohm |
| Transistor Case Style | TO-263 (D2PAK) |
| Drain Source Voltage Vds | 600V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 10A |
| Drain Source On State Resistance | 0.15ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1751989/)

**==> picture [61 x 39] intentionally omitted <==**

## **STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND** 

N-channel 600 V, 0.150 Ω typ., 19.5 A, FDmesh™ II Power MOSFET (with fast diode) in D²PAK, TO-220FP, TO-220 and TO-247 packages 

**Datasheet — production data** 

## **Features** 

|**Order codes**|**VDSS@ **<br>**TJmax**|**RDS(on)**<br>**max**|**ID**|
|---|---|---|---|
|STB23NM60ND|650 V|< 0.180Ω|19.5 A|
|STF23NM60ND||||
|STP23NM60ND||||
|STW23NM60ND||||



- The worldwide best RDS(on) * area amongst the fast recovery diode devices 

**==> picture [164 x 141] intentionally omitted <==**

**----- Start of picture text -----**<br>
TAB<br>3<br>1 3<br>2<br>1<br>D²PAK<br>TO-220FP<br>TAB<br>1 2 3 1 2 3<br>TO-220 TO-247<br>**----- End of picture text -----**<br>


- 100% avalanche tested 

- Low input capacitance and gate charge 

- Low gate input resistance 

- High dv/dt and avalanche capabilities 

## **Applications** 

- Switching applications 

## **Description** 

These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching  performance. They are ideal for bridge topologies and ZVS phase-shift converters. 

## **Figure 1. Internal schematic diagram** 

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**Table 1. Device summary** 

|**Table 1.**<br>**Device summary**||||
|---|---|---|---|
|**Oreder codes**|**Marking**|**Package**|**Packaging**|
|STB23NM60ND|23NM60ND|D²PAK|Tape and reel|
|STF23NM60ND|23NM60ND|TO-220FP|Tube|
|STP23NM60ND|23NM60ND|TO-220||
|STW23NM60ND|23NM60ND|TO-247||



1/22 

December 2012 

Doc ID 14367 Rev 4 

This is information on a product in full production. 

_www.st.com_ 

|**Contents**|**STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND**|
|---|---|
|**Contents**||
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves)         . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10**|
|**5**|**Packaging mechanical data  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19**|
|**6**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21**|



2/22 

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**Electrical ratings** 

**STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND** 

## **1 Electrical ratings** 

**Table 2. Absolute maximum ratings** 

|**Table 2.**|**Absolute maximum ratings**||||
|---|---|---|---|---|
|**Symbol**|**Parameter**|**Value**||**Unit**|
|||**D²PAK, TO-220,**<br>**TO-247**|**TO-220FP**||
|VDS|Drain-source voltage|600||V|
|VGS|Gate-source voltage|± 25||V|
|ID|Drain current (continuous) at TC= 25 °C|19.5|19.5(1)|A|
|ID|Drain current (continuous) at TC= 100 °C|11.7|11.7(1)|A|
|IDM<br>(2)|Drain current (pulsed)|78|78(1)|A|
|PTOT|Total dissipation at TC= 25 °C|150|35|W|
|IAS|Avalanche current, repetitive or not-repetitive<br>(pulse width limited by Tj max)|9||A|
|EAS|Single pulse avalanche energy<br>(starting Tj= 25 °C, ID= IAS, VDD= 50 V)|700||mJ|
|dv/dt(3)|Peak diode recovery voltage slope|40||V/ns|
|VISO|Insulation withstand voltage (RMS) from all<br>three leads to external heat sink<br>(t = 1 s; TC= 25 °C)||2500|V|
|Tstg|Storage temperature|-55 to 150||°C|
|Tj|Max. operating junction temperature|150||°C|



1. Limited by maximum junction temperature 

2. Pulse width limited by safe operating area 

3. ISD ≤  19.5 A, di/dt  ≤  600 A/µs, VDD =80% V(BR)DSS, VDS(peak) < V(BR)DSS 

**Table 3. Thermal data** 

|**Table 3.**|**Thermal data**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**D²PAK **|**TO-220FP **|**TO-220 **|**TO-247**|**Unit**|
|Rthj-case|Thermal resistance junction-case max|0.83|3.6|0.83||°C/W|
|Rthj-amb|Thermal resistance junction-amb max||62.5||50|°C/W|
|Rthj-pcb|Thermal resistance junction-pcb max(1)|30||||°C/W|



1. When mounted on 1 inch² FR-4, 2 Oz copper board. 

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Doc ID 14367 Rev 4 

**Electrical characteristics** 

**STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND** 

## **2 Electrical characteristics** 

(TCASE = 25 °C unless otherwise specified) 

## **Table 4. On/off states** 

|**Table 4.**|**On/off states**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|V(BR)DSS|Drain-source breakdown<br>voltage|ID= 1 mA, VGS= 0|600|||V|
|dv/dt(1)|Drain-source voltage slope|VDD= 480 V, ID= 19.5 A,<br>VGS= 10 V|30|||V/ns|
|IDSS|Zero gate voltage drain<br>current (VGS= 0)|VDS= 600 V,<br>VDS= 600 V, Tc=125 °C|||1<br>100|µA<br>µA|
|IGSS|Gate body leakage current<br>(VDS= 0)|VGS= ±20 V|||±100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 µA|3|4|5|V|
|RDS(on)|Static drain-source on<br>resistance|VGS= 10 V, ID= 10 A||0.150|0.180|Ω|



1. Characteristic value at turn off on inductive load 

## **Table 5. Dynamic** 

|**Table 5.**|**Dynamic**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|Ciss<br>Coss<br>Crss|Input capacitance<br>Output capacitance<br>Reverse transfer<br>capacitance|VDS= 50 V, f =1 MHz,<br>VGS= 0|-|2100<br>80<br>10|-|pF<br>pF<br>pF|
|Coss eq.<br>(1)|Equivalent output<br>capacitance|VGS= 0, VDS= 0 to 480 V|-|310|-|pF|
|Rg|Gate input  resistance|f=1 MHz Gate DC Bias=0<br>Test signal level=20 mV<br>open drain|-|4|-|Ω|
|Qg<br>Qgs<br>Qgd|Total gate charge<br>Gate-source charge<br>Gate-drain charge|VDD= 480 V, ID= 19.5 A<br>VGS= 10 V<br>_(see Figure 18)_|-|69<br>13<br>35|-|nC<br>nC<br>nC|



1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 

4/22 

Doc ID 14367 Rev 4 

**Electrical characteristics** 

**STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND** 

## **Table 6. Switching times** 

|**Table 6.**|**Switching times**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|td(on)<br>tr<br>td(off)<br>tf|Turn-on delay time<br>Rise time<br>Turn-off delay time<br>Fall time|VDD= 300 V, ID= 10 A,<br>RG= 4.7Ω,VGS= 10 V<br>(see Figure 17)|-|21<br>19<br>92<br>42|-|ns<br>ns<br>ns<br>ns|



## **Table 7. Source drain diode** 

|**Table 7.**|**Source drain diode**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|ISD<br>ISDM<br>(1)|Source-drain current<br>Source-drain current (pulsed)||-||19.5<br>78|A<br>A|
|VSD<br>(2)|Forward on voltage|ISD= 19.5 A, VGS=0|-||1.3|V|
|trr<br>Qrr<br>IRRM|Reverse recovery time<br>Reverse recovery charge<br>Reverse recovery current|ISD= 19.5 A, di/dt =100<br>A/µs, VDD= 60 V<br>_(see Figure 19)_|-|190<br>1.2<br>13||ns<br>µC<br>A|
|trr<br>Qrr<br>IRRM|Reverse recovery time<br>Reverse recovery charge<br>Reverse recovery current|VDD= 60 V<br>di/dt =100 A/µs, ISD= 19.5<br>A Tj= 150 °C<br>_(see Figure 19)_|-|270<br>2.0<br>15||ns<br>µC<br>A|



1. Pulse width limited by safe operating area 

2. Pulsed: pulse duration = 300µs, duty cycle 1.5% 

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**Electrical characteristics** 

**STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND** 

## **2.1 Electrical characteristics (curves)** 

**Figure 2. Safe operating area for D[2] PAK and Figure 3. Thermal impedance for D[2] PAK and TO-220 TO-220** 

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## **Figure 4. Safe operating area for TO-220FP** 

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**Figure 5. Thermal impedance for TO-220FP** 

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## **Figure 6. Safe operating area for TO-247** 

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## **Figure 7. Thermal impedance for TO-247** 

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6/22 

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**Electrical characteristics** 

**STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND** 

## **Figure 8. Output characteristics** 

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AM14794v1<br>ID<br>(A)<br>VGS=10V<br>50<br>7V<br>40<br>6V<br>30<br>20<br>5V<br>10<br>0<br>0 5 10 15 20 25 30 VDS(V)<br>**----- End of picture text -----**<br>


## **Figure 10. Static drain-source on resistance** 

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**Figure 12. Capacitance variations** 

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C AM01538v1<br>(pF)<br>10000<br>Ciss<br>1000<br>100<br>Coss<br>10 Crss<br>1<br>0.1 1 10 100 VDS(V)<br>**----- End of picture text -----**<br>


## **Figure 9. Transfer characteristics** 

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AM14795v1<br>ID<br>(A)<br>VDS= 20 V<br>50<br>40<br>30<br>20<br>10<br>0<br>0 2 4 6 8 VGS(V)<br>**----- End of picture text -----**<br>


**Figure 11. Gate charge vs gate-source voltage** 

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**----- Start of picture text -----**<br>
VGS AM01537v1<br>(V) VDD=480V<br>12 ID=19.5A<br>10<br>8<br>6<br>4<br>2<br>0<br>0 20 40 60 80 Qg(nC)<br>**----- End of picture text -----**<br>


**Figure 13. Normalized gate threshold voltage vs temperature** 

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Doc ID 14367 Rev 4 

**Electrical characteristics** 

**STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND** 

**Figure 14. Normalized on resistance vs temperature** 

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**Figure 15. Source-drain diode forward characteristics** 

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## **Figure 16. Normalized BVDSS vs temperature** 

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**----- Start of picture text -----**<br>
VDS AM09028v1<br>(norm)<br>ID=1mA<br>1.10<br>1.08<br>1.06<br>1.04<br>1.02<br>1.00<br>0.98<br>0.96<br>0.94<br>0.92<br>-50 -25 0 25 50 75 100 TJ(°C)<br>**----- End of picture text -----**<br>


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Doc ID 14367 Rev 4 

**Test circuits** 

**STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND** 

## **3 Test circuits** 

**Figure 17. Switching times test circuit for Figure 18. Gate charge test circuit resistive load** 

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VDD<br>12V 47kΩ<br>1kΩ<br>100nF<br>RL 2200 3.3<br>μF μF<br>VDD IG=CONST<br>VD Vi=20V=VGMAX 100Ω D.U.T.<br>VGS<br>2200<br>RG D.U.T. μF 2.7kΩ VG<br>PW<br>47kΩ<br>1kΩ<br>PW<br>AM01468v1 AM01469v1<br>Figure 19. Test circuit for inductive load  Figure 20. Unclamped inductive load test<br>switching and diode recovery times circuit<br>**----- End of picture text -----**<br>


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L<br>A A A<br>D<br>G D.U.T. FASTDIODE L=100μH VD 2200 3.3<br>S B 3.3 1000 μF μF VDD<br>25 Ω B B D μF μF VDD ID<br>G<br>RG S<br>Vi D.U.T.<br>Pw<br>AM01470v1 AM01471v1<br>**----- End of picture text -----**<br>


## **Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform** 

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**----- Start of picture text -----**<br>
V(BR)DSS ton toff<br>VD tdon tr tdoff tf<br>90% 90%<br>IDM<br>10%<br>ID 0 10% VDS<br>VDD VDD 90%<br>VGS<br>AM01472v1 0 10% AM01473v1<br>**----- End of picture text -----**<br>


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Doc ID 14367 Rev 4 

**Package mechanical data** 

**STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com_ . ECOPACK[®] is an ST trademark. 

10/22 

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**Package mechanical data** 

**STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND** 

**Table 8. D²PAK (TO-263) mechanical data** 

|**Dim.**|**mm**|**mm**|**mm**|
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|A1|0.03||0.23|
|b|0.70||0.93|
|b2|1.14||1.70|
|c|0.45||0.60|
|c2|1.23||1.36|
|D|8.95||9.35|
|D1|7.50|||
|E|10||10.40|
|E1|8.50|||
|e||2.54||
|e1|4.88||5.28|
|H|15||15.85|
|J1|2.49||2.69|
|L|2.29||2.79|
|L1|1.27||1.40|
|L2|1.30||1.75|
|R||0.4||
|V2|0°||8°|



11/22 

Doc ID 14367 Rev 4 

**Package mechanical data** 

**STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND** 

**==> picture [173 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 23. D²PAK (TO-263) drawing<br>**----- End of picture text -----**<br>


**==> picture [405 x 575] intentionally omitted <==**

**----- Start of picture text -----**<br>
0079457_T<br>Figure 24. D²PAK footprint [(a)]<br>16.90<br>12.20 5.08<br>1.60<br>3.50<br>9.75<br>Footprint<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
a. All dimensions are in millimeters<br>**----- End of picture text -----**<br>


12/22 

Doc ID 14367 Rev 4 

**Package mechanical data** 

**STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND** 

## **Table 9. TO-220FP mechanical data** 

|**Dim.**|**mm**|**mm**|**mm**|
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.4||4.6|
|B|2.5||2.7|
|D|2.5||2.75|
|E|0.45||0.7|
|F|0.75||1|
|F1|1.15||1.70|
|F2|1.15||1.70|
|G|4.95||5.2|
|G1|2.4||2.7|
|H|10||10.4|
|L2||16||
|L3|28.6||30.6|
|L4|9.8||10.6|
|L5|2.9||3.6|
|L6|15.9||16.4|
|L7|9||9.3|
|Dia|3||3.2|



13/22 

Doc ID 14367 Rev 4 

**Package mechanical data** 

**STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND** 

## **Figure 25. TO-220FP drawing** 

**==> picture [405 x 577] intentionally omitted <==**

**----- Start of picture text -----**<br>
7012510_Rev_K_B<br>**----- End of picture text -----**<br>


14/22 

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**Package mechanical data** 

**STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND** 

## **Table 10. TO-220 type A mechanical data** 

|**Dim.**|**mm**|**mm**|**mm**|
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|b|0.61||0.88|
|b1|1.14||1.70|
|c|0.48||0.70|
|D|15.25||15.75|
|D1||1.27||
|E|10||10.40|
|e|2.40||2.70|
|e1|4.95||5.15|
|F|1.23||1.32|
|H1|6.20||6.60|
|J1|2.40||2.72|
|L|13||14|
|L1|3.50||3.93|
|L20||16.40||
|L30||28.90||
|∅P|3.75||3.85|
|Q|2.65||2.95|



15/22 

Doc ID 14367 Rev 4 

**Package mechanical data** 

**STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND** 

**Figure 26. TO-220 type A drawing** 

**==> picture [405 x 383] intentionally omitted <==**

**----- Start of picture text -----**<br>
0015988_typeA_Rev_S<br>**----- End of picture text -----**<br>


16/22 

Doc ID 14367 Rev 4 

**Package mechanical data** 

**STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND** 

**Table 11. TO-247 mechanical data** 

|**Dim.**|**mm.**|**mm.**|**mm.**|
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.85||5.15|
|A1|2.20||2.60|
|b|1.0||1.40|
|b1|2.0||2.40|
|b2|3.0||3.40|
|c|0.40||0.80|
|D|19.85||20.15|
|E|15.45||15.75|
|e|5.30|5.45|5.60|
|L|14.20||14.80|
|L1|3.70||4.30|
|L2||18.50||
|∅P|3.55||3.65|
|∅R|4.50||5.50|
|S|5.30|5.50|5.70|



17/22 

Doc ID 14367 Rev 4 

**Package mechanical data** 

**STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND** 

## **Figure 27. TO-247 drawing** 

**==> picture [405 x 398] intentionally omitted <==**

**----- Start of picture text -----**<br>
0075325_G<br>**----- End of picture text -----**<br>


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Doc ID 14367 Rev 4 

**Packaging mechanical data** 

**STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND** 

## **5 Packaging mechanical data** 

**Table 12. D²PAK (TO-263) tape and reel mechanical data** 

||**Tape**|**Tape**||**Reel**|**Reel**|
|---|---|---|---|---|---|
|**Dim.**|**mm**||**Dim.**|**mm**||
||**Min.**|**Max.**||**Min.**|**Max.**|
|A0|10.5|10.7|A||330|
|B0|15.7|15.9|B|1.5||
|D|1.5|1.6|C|12.8|13.2|
|D1|1.59|1.61|D|20.2||
|E|1.65|1.85|G|24.4|26.4|
|F|11.4|11.6|N|100||
|K0|4.8|5.0|T||30.4|
|P0|3.9|4.1||||
|P1|11.9|12.1||Base qty|1000|
|P2|1.9|2.1||Bulk qty|1000|
|R|50|||||
|T|0.25|0.35||||
|W|23.7|24.3||||



19/22 

Doc ID 14367 Rev 4 

**Packaging mechanical data** 

**STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND** 

## **Figure 28. Tape** 

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**----- Start of picture text -----**<br>
10 pitches cumulative<br>tolerance on tape +/- 0.2 mm<br>Top cover P0 D P2<br>T tape<br>E<br>F<br>K0 W<br>B0<br>| OO ©) ® @ 6)<br>HY } tI Eel e l lel<br>‘ Liss<br>A0 P1 D1<br>————_<br>User direction of feed<br>R<br>¢ ¢/¢ ¢/¢ ¢/4 ¢/4 4/4 ¢<br>erates<br>DDD a a |<br>—_> Bending radius<br>User direction of feed<br>AM08852v2<br>**----- End of picture text -----**<br>


## **Figure 29. Reel** 

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**----- Start of picture text -----**<br>
T<br>REEL DIMENSIONS<br>40mm min.<br>Access hole<br>At sl ot location<br>B<br>D<br>C<br>N<br>A<br>Full radius Tape slot  G measured at hub<br>in core for<br>tape start 25 mm min.<br>width<br>AM08851v2<br>**----- End of picture text -----**<br>


20/22 Doc ID 14367 Rev 4 ~~I~~ 

**Revision history** 

**STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND** 

## **6 Revision history** 

## **Table 13. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|22-Jan-2008|1|First release|
|11-Dec-2008|2|Document status promoted from preliminary data to datasheet.|
|06-Oct-2010|3|Corrected unit in_Table 4: On/off states_|
|18-Dec-2012|4|– Minor text changes in cover page<br>– The part number STI23NM60ND has been moved to a<br>separate datasheet<br>– Modified:_Note 1_and_Note 3_in_Table 2_<br>– Added Rthj-pcbin_Table 3_and_Note 1_<br>– Modified: typ values in_Table 5_and_6_<br>– Modified:_Figure 8_,_9_,_11_and_16_<br>– Updated:_Section 4: Package mechanical data_and_Section 5:_<br>_Packaging mechanical data_|



21/22 

Doc ID 14367 Rev 4 

**STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND** 

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22/22 

Doc ID 14367 Rev 4 



## Links

- [View this product on Novapart](https://novapart.co/products/STB23NM60ND/power-mosfet-n-channel-600-v-10-a-015-ohm-to-263)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/stmicroelectronics/stb23nm60nd/mosfet-n-ch-600v-20a-d2pak/dp/1751989)
---

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