# Power MOSFET, N Channel, 500 V, 17 A, 0.162 ohm, TO-263 (D2PAK), Surface Mount

![Product image](https://novapart.co/image/farnell:2098129/)

**URL**: https://novapart.co/products/STB23NM50N/power-mosfet-n-channel-500-v-17-a-0162-ohm-to-263
**SKU**: STB23NM50N
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €2.0400
**Stock**: 1000+
**Lead Time**: 113 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.162ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 125W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-263 (D2PAK) |
| Drain Source Voltage Vds | 500V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 17A |
| Drain Source On State Resistance | 0.162ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2098129/)

## **STB23NM50N, STF23NM50N STP23NM50N, STW23NM50N** N-channel 500 V, 0.162 Ω, 17 A TO-220, TO-220FP, TO-247, D²PAK MDmesh™ II Power MOSFET 

## **Features** 

**==> picture [444 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
Features<br>Order codes VDSS  RDS(on)  ID<br>(@Tjmax) max.<br>STB23NM50N 1 2 3 1 2 3<br>TO-220FP TO-220<br>STF23NM50N<br>550 V < 0.19 Ω 17 A<br>STP23NM50N<br>STW23NM50N<br>■ 100% avalanche tested<br>3 3<br>2 1<br>■ Low input capacitance and gate charge 1<br>TO-247 D²PAK<br>■ Low gate input resistance<br>**----- End of picture text -----**<br>


## **Application** 

Switching applications 

## **Description** 

These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 

## **Figure 1. Internal schematic diagram** 

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**Table 1. Device summary** 

|**Order codes**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STB23NM50N|23NM50N|D²PAK|Tape and reel|
|STF23NM50N||TO-220FP|Tube|
|STP23NM50N||TO-220||
|STW23NM50N||TO-247||



1/21 

May 2011 

Doc ID 16913 Rev 4 

_www.st.com_ 

**Contents** 

**STB23NM50N, STF23NM50N, STP23NM50N, STW23NM50N** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves)         . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10**|
|**5**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15**|
|**6**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16**|



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**STB23NM50N, STF23NM50N, STP23NM50N, STW23NM50N** 

**Electrical ratings** 

## **1 Electrical ratings** 

## **Table 2. Absolute maximum ratings** 

|**Table 2.**|**Absolute maximum ratings**|||||
|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|||**Unit**|
|||**TO-220, D²PAK**|**TO-247**|**TO-220FP**||
|VDS|Drain-source voltage (VGS= 0)|500|||V|
|VGS|Gate- source voltage|± 25|||V|
|ID|Drain current (continuous) at TC= 25 °C|17||17(1)|A|
|ID|Drain current (continuous) at TC= 100 °C|11||11(1)|A|
|IDM (2)|Drain current (pulsed)|68||68(1)|A|
|PTOT|Total dissipation at TC= 25 °C|125||30|W|
|VISO|Insulation withstand voltage (RMS) from all<br>three leads to external heat sink<br>(t=1 s;TC=25 °C)|||2500|V|
|dv/dt(3)|Peak diode recovery voltage slope|15|||V/ns|
|Tstg|Storage temperature|-55 to 150|||°C|
|Tj|Max. operating junction temperature|150|||°C|



1. Limited only by maximum temperature allowed 

2. Pulse width limited by safe operating area 

3. ISD ≤   17 A, di/dt   ≤  400 A/µs, VDS peak ≤   V(BR)DSS, VDD = 80% V(BR)DSS 

## **Table 3. Thermal data** 

|**Table 3.**|**Thermal data**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Value**||||**Unit**|
|||**D²PAK**|**TO-247**|**TO-220**|**TO-220FP**||
|Rthj-case|Thermal resistance junction-case<br>max|1|||4.17|°C/W|
|Rthj-pcb<br>(1)|Thermal resistance junction-pcb<br>minimum footprint|30||||°C/W|
|Rthj-amb|Thermal resistance junction-<br>ambient max||62.5|50|62.5|°C/W|
|Tl|Maximum lead temperature for<br>soldering purpose||300|||°C|



1. When mounted on 1inch² FR-4 board, 2 oz Cu 

## **Table 4. Avalanche characteristics** 

|**Table 4.**|**Avalanche characteristics**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|IAR|Avalanche current, repetitive or not-repetitive<br>(pulse width limited by Tj Max)|6|A|
|EAS|Single pulse avalanche energy<br>(starting Tj = 25 °C, ID= IAR, VDD= 50 V)|254|mJ|
|Doc ID 16913 Rev 4<br>3/21||||



**STB23NM50N, STF23NM50N, STP23NM50N, STW23NM50N** 

**Electrical characteristics** 

## **2 Electrical characteristics** 

(TCASE=25 °C unless otherwise specified) 

## **Table 5. On/off states** 

|**Table 5.**|**On/off states**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|V(BR)DSS|Drain-source<br>breakdown voltage|ID= 1 mA, VGS= 0|500|||V|
|IDSS|Zero gate voltage<br>drain current (VGS= 0)|VDS= max rating<br>VDS= max rating, @125 °C|||1<br>100|µA<br>µA|
|IGSS|Gate-body leakage<br>current (VDS= 0)|VGS= ± 25 V|||100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 µA|2|3|4|V|
|RDS(on)|Static drain-source on<br>resistance|VGS= 10 V, ID= 8.5 A||0.162|0.19|Ω|



## **Table 6. Dynamic** 

|**Table 6.**|**Dynamic**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|Ciss<br>Coss<br>Crss|Input capacitance<br>Output capacitance<br>Reverse transfer<br>capacitance|VDS= 50 V, f = 1 MHz,<br>VGS= 0|-|1330<br>84<br>4.8|-|pF<br>pF<br>pF|
|Coss eq.<br>(1)|Equivalent output<br>capacitance|VGS= 0, VDS= 0 to 400 V|-|210|-|pF|
|Qg<br>Qgs<br>Qgd|Total gate charge<br>Gate-source charge<br>Gate-drain charge|VDD= 400 V, ID= 17 A,<br>VGS= 10 V,<br>_(see Figure 18)_|-|45<br>7<br>24|-|nC<br>nC<br>nC|
|Rg|Gate input resistance|f=1 MHz Gate DC Bias=0<br>Test signal level=20 mV<br>open drain|-|4.6|-|Ω|



1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDS 

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**STB23NM50N, STF23NM50N, STP23NM50N, STW23NM50N** 

**Electrical characteristics** 

## **Table 7. Switching times** 

|**Table 7.**|**Switching times**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|td(on)<br>tr<br>td(off)<br>tf|Turn-on delay time<br>Rise time<br>Turn-off-delay time<br>Fall time|VDD= 250 V, ID= 17 A<br>RG= 4.7ΩVGS= 10 V<br>_(see Figure 17)_|-|6.6<br>19<br>71<br>29|-|ns<br>ns<br>ns<br>ns|



## **Table 8. Source drain diode** 

|**Table 8.**|**Source drain diode**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min**|**Typ.**|**Max**|**Unit**|
|ISD<br>ISDM (1)|Source-drain current<br>Source-drain current (pulsed)||-||17<br>68|A<br>A|
|VSD (2)|Forward on voltage|ISD= 17 A, VGS= 0|-||1.5|V|
|trr<br>Qrr<br>IRRM|Reverse recovery time<br>Reverse recovery charge<br>Reverse recovery current|ISD= 17 A, di/dt = 100 A/µs<br>VDD= 60 V<br>_(see Figure 22)_|-|286<br>3700<br>26||ns<br>nC<br>A|
|trr<br>Qrr<br>IRRM|Reverse recovery time<br>Reverse recovery charge<br>Reverse recovery current|ISD= 17 A, di/dt = 100 A/µs<br>VDD= 60 V, Tj= 150 °C<br>_(see Figure 22)_|-|350<br>4800<br>27||ns<br>nC<br>A|



1. Pulse width limited by safe operating area 

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% 

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**STB23NM50N, STF23NM50N, STP23NM50N, STW23NM50N** 

**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**Figure 2. Safe operating area  for TO-220, D²PAK** 

**Figure 3. Thermal impedance for TO-220, D²PAK** 

**Figure 4. Safe operating area  for TO-220FP** 

**Figure 5. Thermal impedance for TO-220FP** 

## **Figure 6. Safe operating area for TO-247** 

## **Figure 7. Thermal impedance for TO-247** 

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**Electrical characteristics** 

## **Figure 8. Output characteristics** 

**Figure 9. Transfer characteristics** 

**Figure 10. Normalized BVDSS vs temperature** 

**Figure 11. Static drain-source on resistance** 

**Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations** 

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**Electrical characteristics** 

**Figure 14. Normalized gate threshold voltage Figure 15. Normalized on resistance vs vs temperature temperature** 

## **Figure 16. Source-drain diode forward characteristics** 

**==> picture [33 x 6] intentionally omitted <==**

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AM09169v1<br>**----- End of picture text -----**<br>


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VSD<br>(V)<br>1.21.4 Cee TJ=-50°C<br>TJ=25°C<br>1.0 |ee e<br>0.8 yr TJ=150°C<br>L o<br>0.6<br>P T<br>0.4<br>0.2<br>0<br>0 2 4 6 8 10 12 14 16 18 ISD(A)<br>**----- End of picture text -----**<br>


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**STB23NM50N, STF23NM50N, STP23NM50N, STW23NM50N** 

**Test circuits** 

## **3 Test circuits** 

**Figure 17. Switching times test circuit for Figure 18. Gate charge test circuit resistive load** 

**==> picture [462 x 162] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDD<br>12V 47kΩ<br>1kΩ<br>100nF<br>RL 2200 3.3<br>μF μF<br>VDD IG=CONST<br>VD Vi=20V=VGMAX 100Ω D.U.T.<br>VGS<br>2200<br>RG D.U.T. μF 2.7kΩ VG<br>PW<br>47kΩ<br>1kΩ<br>PW<br>AM01468v1 AM01469v1<br>**----- End of picture text -----**<br>


**Figure 19. Test circuit for inductive load Figure 20. Unclamped inductive load test switching and diode recovery times circuit** 

**==> picture [462 x 346] intentionally omitted <==**

**----- Start of picture text -----**<br>
L<br>A A A<br>D<br>G D.U.T. FASTDIODE L=100μH VD 2200 3.3<br>S B 3.3 1000 μF μF VDD<br>25 Ω B B D μF μF VDD ID<br>G<br>RG S<br>Vi D.U.T.<br>Pw<br>AM01470v1 AM01471v1<br>Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform<br>V(BR)DSS ton toff<br>VD tdon tr tdoff tf<br>90% 90%<br>IDM<br>10%<br>ID 0 10% VDS<br>VDD VDD 90%<br>VGS<br>AM01472v1 0 10% AM01473v1<br>**----- End of picture text -----**<br>


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**STB23NM50N, STF23NM50N, STP23NM50N, STW23NM50N** 

**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 

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**Package mechanical data** 

## **Table 9. TO-220FP mechanical data** 

|**Dim.**|**mm**<br>**Min.**<br>**Typ.**<br>**Max.**|**mm**<br>**Min.**<br>**Typ.**<br>**Max.**|**mm**<br>**Min.**<br>**Typ.**<br>**Max.**|
|---|---|---|---|
|||**Typ.**|**Max.**|
|A|4.4||4.6|
|B|2.5||2.7|
|D|2.5||2.75|
|E|0.45||0.7|
|F|0.75||1|
|F1|1.15||1.70|
|F2|1.15||1.70|
|G|4.95||5.2|
|G1|2.4||2.7|
|H|10||10.4|
|L2||16||
|L3|28.6||30.6|
|L4|9.8||10.6|
|L5|2.9||3.6|
|L6|15.9||16.4|
|L7|9||9.3|
|Dia|3||3.2|



## **Figure 23. TO-220FP drawing** 

**==> picture [405 x 265] intentionally omitted <==**

**----- Start of picture text -----**<br>
L7<br>E<br>A<br>B<br>D<br>Dia<br>L5<br>L6<br>F1 F2<br>F<br>H G<br>G1<br>L2 L4<br>L3<br>7012510_Rev_K<br>**----- End of picture text -----**<br>


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Doc ID 16913 Rev 4 11/21<br>**----- End of picture text -----**<br>


**STB23NM50N, STF23NM50N, STP23NM50N, STW23NM50N** 

**Package mechanical data** 

## **Table 10. TO-220 type A mechanical data** 

|**Dim.**|**mm**|**mm**|**mm**|
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|b|0.61||0.88|
|b1|1.14||1.70|
|c|0.48||0.70|
|D|15.25||15.75|
|D1||1.27||
|E|10||10.40|
|e|2.40||2.70|
|e1|4.95||5.15|
|F|1.23||1.32|
|H1|6.20||6.60|
|J1|2.40||2.72|
|L|13||14|
|L1|3.50||3.93|
|L20||16.40||
|L30||28.90||
|∅P|3.75||3.85|
|Q|2.65||2.95|



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**Package mechanical data** 

**Figure 24. TO-220 type A drawing** 

**==> picture [405 x 383] intentionally omitted <==**

**----- Start of picture text -----**<br>
0015988_typeA_Rev_S<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

**Table 11. TO-247 mechanical data** 

|**Dim.**|**mm**|**mm**|**mm**|
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.85||5.15|
|A1|2.20||2.60|
|b|1.0||1.40|
|b1|2.0||2.40|
|b2|3.0||3.40|
|c|0.40||0.80|
|D|19.85||20.15|
|E|15.45||15.75|
|e||5.45||
|L|14.20||14.80|
|L1|3.70||4.30|
|L2||18.50||
|∅P|3.55||3.65|
|∅R|4.50||5.50|
|S||5.50||



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**STB23NM50N, STF23NM50N, STP23NM50N, STW23NM50N** 

**Package mechanical data** 

**==> picture [133 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 25. TO-247 drawing<br>**----- End of picture text -----**<br>


**==> picture [405 x 398] intentionally omitted <==**

**----- Start of picture text -----**<br>
0075325_F<br>**----- End of picture text -----**<br>


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**STB23NM50N, STF23NM50N, STP23NM50N, STW23NM50N** 

**Package mechanical data** 

**Table 12. D²PAK (TO-263) mechanical data** 

|**Dim.**|**mm**|**mm**|**mm**|
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|A1|0.03||0.23|
|b|0.70||0.93|
|b2|1.14||1.70|
|c|0.45||0.60|
|c2|1.23||1.36|
|D|8.95||9.35|
|D1|7.50|||
|E|10||10.40|
|E1|8.50|||
|e||2.54||
|e1|4.88||5.28|
|H|15||15.85|
|J1|2.49||2.69|
|L|2.29||2.79|
|L1|1.27||1.40|
|L2|1.30||1.75|
|R||0.4||
|V2|0°||8°|



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**STB23NM50N, STF23NM50N, STP23NM50N, STW23NM50N** 

**Package mechanical data** 

## **Figure 26. D²PAK footprint[(a)]** 

**==> picture [405 x 232] intentionally omitted <==**

**----- Start of picture text -----**<br>
16.90<br>12.20 5.08<br>1.60<br>3.50<br>9.75<br>Footprint<br>**----- End of picture text -----**<br>


## **Figure 27. D²PAK (TO-263) drawing** 

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**----- Start of picture text -----**<br>
0079457_S<br>**----- End of picture text -----**<br>


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a. All dimension are in millimeters<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

## **5 Package mechanical data** 

**Table 13. D²PAK (TO-263) tape and reel mechanical data** 

||**Tape**|**Tape**||**Reel**|**Reel**|
|---|---|---|---|---|---|
|**Dim.**|**mm**||**Dim.**|**mm**||
||**Min.**|**Max.**||**Min.**|**Max.**|
|A0|10.5|10.7|A||330|
|B0|15.7|15.9|B|1.5||
|D|1.5|1.6|C|12.8|13.2|
|D1|1.59|1.61|D|20.2||
|E|1.65|1.85|G|24.4|26.4|
|F|11.4|11.6|N|100||
|K0|4.8|5.0|T||30.4|
|P0|3.9|4.1||||
|P1|11.9|12.1||Base qty|1000|
|P2|1.9|2.1||Bulk qty|1000|
|R|50|||||
|T|0.25|0.35||||
|W|23.7|24.3||||



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**STB23NM50N, STF23NM50N, STP23NM50N, STW23NM50N** 

**Package mechanical data** 

**==> picture [404 x 345] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 28. Tape<br>10 pitches cumulative<br>tolerance on tape +/- 0.2 mm<br>T i e Top covertape P0 D _ P2<br>| / C00 G8G 8000 8 00 E<br>F<br>K0 W<br>B0<br>He s an bo e felloie n di L ne lli ae ll i e t<br>A0 P1 D1<br>——<br>User direction of feed<br>R<br>\ (Gera$/¢l e$¢) s/% $/% al f p]/ a% les l e/4 %s llr eal :<br>e crerele S s Se tara Se Se Se |<br>$< Bending radius<br>User direction of feed<br>AM08852v2<br>**----- End of picture text -----**<br>


## **Figure 29. Reel** 

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**----- Start of picture text -----**<br>
T<br>REEL DIMENSIONS<br>40mm min.<br>Access hole<br>|. At sl ot location<br>B<br>D<br>C<br>N<br>A<br>Full radius Tape slot  G measured at hub<br>in core for<br>tape start 25 mm min.<br>width<br>AM08851v2<br>**----- End of picture text -----**<br>


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**STB23NM50N, STF23NM50N, STP23NM50N, STW23NM50N** 

**Revision history** 

## **6 Revision history** 

## **Table 14. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|11-Dec-2009|1|First release.|
|26-May-2010|2|Document status promoted from preliminary data to datasheet.|
|16-Sep-2010|3|Added new value in_Figure 14_,_Figure 15_and_Figure 10_.|
|23-May-2011|4|_Section 2.1: Electrical characteristics (curves)_has been<br>updated.|



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Doc ID 16913 Rev 4 

**STB23NM50N, STF23NM50N, STP23NM50N, STW23NM50N** 

## **Please Read Carefully:** 

Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 

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Doc ID 16913 Rev 4 



## Links

- [View this product on Novapart](https://novapart.co/products/STB23NM50N/power-mosfet-n-channel-500-v-17-a-0162-ohm-to-263)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/stb23nm50n/mosfet-n-ch-500v-17a-d2pak/dp/2098129)
---

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