# Power MOSFET, N Channel, 40 V, 120 A, 0.0033 ohm, TO-263 (D2PAK), Surface Mount

![Product image](https://novapart.co/image/farnell:2807182/)

**URL**: https://novapart.co/products/STB200NF04T4/power-mosfet-n-channel-40-v-120-a-00033-ohm-to-263
**SKU**: STB200NF04T4
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.8800
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Power Dissipation | 310W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 310W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.0033ohm |
| Transistor Case Style | TO-263 (D2PAK) |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 120A |
| Drain Source On State Resistance | 0.0033ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2807182/)

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## **STP200NF04 STB200NF04 - STB200NF04-1** 

## N-CHANNEL 40V - 120 A - 3.3 mΩ  TO-220/D²PAK/I²PAK STri FET™II MOSFET p 

## **Table 1: General Features** 

|**Type**|**VDSS**|**RDS(on)**|**ID**|**Pw**|
|---|---|---|---|---|
|STB200NF04<br>STB200NF04-1<br>STP200NF04|40 V<br>40 V<br>40 V|< 0.0037Ω<br>< 0.0037Ω<br>< 0.0037Ω|120 A<br>120 A<br>120 A|310 W<br>310 W<br>310 W|



- I STANDARD THRESHOLD DRIVE 

I 100% AVALANCHE TESTED 

## **DESCRIPTION** 

This MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. 

## **Figure 1: Package** 

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**----- Start of picture text -----**<br>
3<br>1<br>3<br>1 2 D [2] PAK<br>TO-220<br>[3]<br>1 [2]<br>I [2] PAK<br>**----- End of picture text -----**<br>


## **Figure 2: Internal Schematic Diagram** 

## **APPLICATIONS** 

I HIGH CURRENT, HIGH SWITCHING SPEED I AUTOMOTIVE 

**==> picture [102 x 138] intentionally omitted <==**

**Table 2: Order Codes** 

|**Table 2: Order Codes**||||
|---|---|---|---|
|**SALES TYPE**|**MARKING**|**PACKAGE**|**PACKAGING**|
|STB200NF04T4|B200NF04|D2PAK|TAPE & REEL|
|STB200NF04-1|B200NF04|I2PAK|TUBE|
|STP200NF04|P200NF04|TO-220|TUBE|



Rev. 3 

October 2004 

1/15 

**STP200NF04 - STB200NF04 - STB200NF04-1** 

**Table 3: Absolute Maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VDS|Drain-source Voltage (VGS= 0)|40|V|
|VDGR|Drain-gate Voltage (RGS= 20 kΩ)|40|V|
|VGS|Gate- source Voltage|± 20|V|
|ID(#)|Drain Current (continuos) at TC= 25°C|120|A|
|ID(#)|Drain Current (continuos) at TC= 100°C|120|A|
|IDM(�)|Drain Current (pulsed)|480|A|
|PTOT|Total Dissipation at TC= 25°C|310|W|
||Derating Factor|2.07|W/°C|
|dv/dt (1)|Peak Diode Recovery voltage slope|1.5|V/ns|
|EAS(2)|Single Pulse Avalanche Energy|1.3|J|
|Tj<br>Tstg|Operating Junction Temperature<br>Storage Temperature|-55 to 175|°C|



(�) Pulse width limited by safe operating area 

(1) ISD ≤120A, di/dt ≤500A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. 

(2) Starting Tj = 25°C, Id = 60A, VDD=30 V 

(#) Current Limited by Package 

**Table 4: Thermal Data** 

|||**TO-220 / I2PAK / D2PAK**||
|---|---|---|---|
|Rthj-case|Thermal Resistance Junction-case Max|0.48|°C/W|
|Rthj-pcb|Thermal Resistance Junction-pcb Max|(see Figure 17)|°C/W|
|Rthj-amb<br>Tl|Thermal Resistance Junction-ambient (Free air) Max<br>Maximum Lead Temperature For Soldering Purpose|62.5<br>300|°C/W<br>°C|



## **ELECTRICAL CHARACTERISTICS** (TCASE =25°C UNLESS OTHERWISE SPECIFIED) **Table 5: On/Off** 

|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source<br>Breakdown Voltage|ID= 250 µA, VGS= 0|40|||V|
|IDSS|Zero Gate Voltage<br>Drain Current (VGS= 0)|VDS= Max Rating<br>VDS= Max Rating, TC= 125 °C|||1<br>10|µA<br>µA|
|IGSS|Gate-body Leakage<br>Current (VDS= 0)|VGS= ± 20V|||±100|nA|
|VGS(th)|Gate Threshold Voltage|VDS= VGS, ID= 250µA|2||4|V|
|RDS(on)|Static Drain-source On<br>Resistance|VGS= 10V, ID= 90 A||3.3|3.7|mΩ|



2/15 

**STP200NF04 - STB200NF04 - STB200NF04-1** 

## **ELECTRICAL CHARACTERISTICS (CONTINUED)** 

## **Table 6: Dynamic** 

|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|gfs(1)|Forward Transconductance|VDS= 15 V,ID= 90 A||150||S|
|Ciss<br>Coss<br>Crss|Input Capacitance<br>Output Capacitance<br>Reverse Transfer<br>Capacitance|VDS= 25V, f = 1 MHz, VGS= 0||5100<br>1600<br>600||pF<br>pF<br>pF|



## **Table 7: Switching On/Off** 

|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)<br>tr<br>td(off)<br>tf|Turn-on Delay Time<br>Rise Time<br>Turn-off Delay Time<br>Fall Time|VDD= 20 V, ID= 90 A<br>RG= 4.7ΩVGS= 10 V<br>(see Figure 20)||30<br>320<br>140<br>120||ns<br>ns<br>ns<br>ns|
|Qg<br>Qgs<br>Qgd|Total Gate Charge<br>Gate-Source Charge<br>Gate-Drain Charge|VDD= 20V, ID= 120 A,<br>VGS= 10V<br>(see Figure 23)||170<br>30<br>62|210|nC<br>nC<br>nC|



**Table 8: Source Drain Diode** 

|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD<br>ISDM(2)|Source-drain Current<br>Source-drain Current (pulsed)||||120<br>480|A<br>A|
|VSD(1)|Forward On Voltage|ISD= 120 A, VGS= 0|||1.3|V|
|trr<br>Qrr<br>IRRM|Reverse Recovery Time<br>Reverse Recovery Charge<br>Reverse Recovery Current|ISD= 120 A, di/dt = 100A/µs<br>VDD= 30V, Tj= 150°C<br>(see Figure 21)||85<br>190<br>4.5||ns<br>nC<br>A|



(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 

(2) Pulse width limited by safe operating area. 

3/15 

**STP200NF04 - STB200NF04 - STB200NF04-1** 

**Figure 3: Safe Operating Area** 

**==> picture [179 x 178] intentionally omitted <==**

**Figure 4: Output Characteristics** 

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**Figure 5: Transconductance** 

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## **Figure 6: Thermal Impedance** 

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**Figure 7: Transfer Characteristics** 

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**Figure 8: Static Drain-source On Resistance** 

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4/15 

**STP200NF04 - STB200NF04 - STB200NF04-1** 

## **Figure 9: Gate Charge vs Gate-source Voltage** 

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**Figure 10: Normalized Gate Thereshold Voltage vs Temperature** 

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**Figure 11: Dource-Drain Diode Forward Characteristics** 

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**Figure 12: Capacitance Variations** 

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**Figure 13: Normalized On Resistance vs Temperature** 

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**Figure 14: Normalized Breakdown Voltage vs Temperature** 

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**STP200NF04 - STB200NF04 - STB200NF04-1** 

**Figure 15: Thermal Resistance Rthj-a vs PCB Copper Area** 

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**Figure 16: Max Power Dissipation vs PCB Copper Area** 

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**STP200NF04 - STB200NF04 - STB200NF04-1** 

**Figure 17: Allowable lav vs. Time in Avalanche** 

**==> picture [364 x 178] intentionally omitted <==**

The previous curve gives the safe operating area for unclamped inductive loads, single pulse or repetitive, under the following conditions: 

PD(AVE) = 0.5 * (1.3 * BVDSS * IAV) 

EAS(AR) = PD(AVE) * tAV 

## Where: 

IAV  is the Allowable Current in Avalanche 

PD(AVE) is the Average Power Dissipation in Avalanche (Single Pulse) tAV is the Time in Avalanche 

To derate above 25 °C, at fixed IAV, the following equation must be applied: 

IAV = 2 * (Tjmax - TCASE) / (1.3 * BVDSS * Zth) 

## Where: 

Zth = K * Rth is the value coming from Normalized Thermal Response at fixed pulse width equal to TAV. 

7/15 

**STP200NF04 - STB200NF04 - STB200NF04-1** 

## **SPICE THERMAL MODEL** 

## **Table 9: 6th Order RC Network** 

|**Parameter**|**Node**|**Value**|
|---|---|---|
|CTHERM1|1 - 2|1.4958E-3|
|CTHERM2|2 - 3|3.5074E-2|
|CTHERM3|3 - 4|5.939E-2|
|CTHERM4|4 - 5|9.7411E-2|
|CTHERM5|5 - 6|8.8596E-2|
|CTHERM6|6 - 7|8.2755E-1|
||||
|RTHERM1|1 - 2|0.0384|
|RTHERM2|2 - 3|0.0624|
|RTHERM3|3 - 4|0.072|
|RTHERM4|4 - 5|0.0912|
|RTHERM5|5 - 6|0.1008|
|RTHERM6|6 - 7|0.1152|



**Figure 18: Schematic of 6th Order RC Network** 

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8/15 

**STP200NF04 - STB200NF04 - STB200NF04-1** 

**Figure 19: Unclamped Inductive Load Test Circuit** 

**==> picture [206 x 164] intentionally omitted <==**

**Figure 20: Switching Times Test Circuit For Resistive Load** 

**==> picture [207 x 86] intentionally omitted <==**

**Figure 22: Unclamped Inductive Wafeform** 

**==> picture [204 x 167] intentionally omitted <==**

**Figure 23: Gate Charge Test Circuit** 

**==> picture [206 x 164] intentionally omitted <==**

**Figure 21: Test Circuit For Inductive Load Switching and Diode Recovery Times** 

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9/15 

**STP200NF04 - STB200NF04 - STB200NF04-1** 

## **TO-220 MECHANICAL DATA** 

|**TO-220 MECHANICAL DATA**|**TO-220 MECHANICAL DATA**|**TO-220 MECHANICAL DATA**|**TO-220 MECHANICAL DATA**|**TO-220 MECHANICAL DATA**|**TO-220 MECHANICAL DATA**|**TO-220 MECHANICAL DATA**|
|---|---|---|---|---|---|---|
||||||||
||||||||
|**DIM.**|**mm.**|||**inch**|||
||**MIN.**|**TYP**|**MAX.**|**MIN.**|**TYP.**|**MAX.**|
|A|4.40||4.60|0.173||0.181|
|b|0.61||0.88|0.024||0.034|
|b1|1.15||1.70|0.045||0.066|
|c|0.49||0.70|0.019||0.027|
|D|15.25||15.75|0.60||0.620|
|E|10||10.40|0.393||0.409|
|e|2.40||2.70|0.094||0.106|
|e1|4.95||5.15|0.194||0.202|
|F|1.23||1.32|0.048||0.052|
|H1|6.20||6.60|0.244||0.256|
|J1|2.40||2.72|0.094||0.107|
|L|13||14|0.511||0.551|
|L1|3.50||3.93|0.137||0.154|
|L20||16.40|||0.645||
|L30||28.90|||1.137||
|øP|3.75||3.85|0.147||0.151|
|Q|2.65||2.95|0.104||0.116|
||||||||



**==> picture [404 x 256] intentionally omitted <==**

10/15 

**STP200NF04 - STB200NF04 - STB200NF04-1** 

||||~~**TO-247 MECHANICAL DATA**~~<br>**D2PAK MECHANICAL DATA**|~~**TO-247 MECHANICAL DATA**~~<br>**D2PAK MECHANICAL DATA**|~~**TO-247 MECHANICAL DATA**~~<br>**D2PAK MECHANICAL DATA**|~~**TO-247 MECHANICAL DATA**~~<br>**D2PAK MECHANICAL DATA**|~~**TO-247 MECHANICAL DATA**~~<br>**D2PAK MECHANICAL DATA**|~~**TO-247 MECHANICAL DATA**~~<br>**D2PAK MECHANICAL DATA**|~~**TO-247 MECHANICAL DATA**~~<br>**D2PAK MECHANICAL DATA**|~~**TO-247 MECHANICAL DATA**~~<br>**D2PAK MECHANICAL DATA**||
|---|---|---|---|---|---|---|---|---|---|---|---|
|||||||||||||
|||||||||||||
|**DIM.**||||**mm.**|||**inch**|||||
|||**MIN.**||**TYP**|**MAX.**||**MIN.**||**TYP.**|**MAX.**||
|A||4.4|||4.6||0.173|||0.181||
|A1||2.49|||2.69||0.098|||0.106||
|A2||0.03|||0.23||0.001|||0.009||
|B||0.7|||0.93||0.027|||0.036||
|B2||1.14|||1.7||0.044|||0.067||
|C||0.45|||0.6||0.017|||0.023||
|C2||1.23|||1.36||0.048|||0.053||
|D||8.95|||9.35||0.352|||0.368||
|D1||||8|||||0.315|||
|E||10|||10.4||0.393|||||
|E1||||8.5|||||0.334|||
|G||4.88|||5.28||0.192|||0.208||
|L||15|||15.85||0.590|||0.625||
|L2||1.27|||1.4||0.050|||0.055||
|L3||1.4|||1.75||0.055|||0.068||
|M||2.4|||3.2||0.094|||0.126||
|R||||0.4|||||0.015|||
|V2||0º|||4º|||||||
|||||||||||||
|||||||||||||
|||||||||||||
|||||||||||||
|||||||||||||
|||||_3_||||||||
|||||||||||||
|||||||||||||



11/15 

**STP200NF04 - STB200NF04 - STB200NF04-1** 

## **TO-262 (I[2] PAK) MECHANICAL DATA** 

|**TO-262 (I2PAK) MECHANICAL DATA**|**TO-262 (I2PAK) MECHANICAL DATA**|**TO-262 (I2PAK) MECHANICAL DATA**|**TO-262 (I2PAK) MECHANICAL DATA**|**TO-262 (I2PAK) MECHANICAL DATA**|**TO-262 (I2PAK) MECHANICAL DATA**|**TO-262 (I2PAK) MECHANICAL DATA**|
|---|---|---|---|---|---|---|
||||||||
|**DIM.**|**mm.**|||**inch**|||
||**MIN.**|**TYP**|**MAX.**|**MIN.**|**TYP.**|**MAX.**|
|A|4.40||4.60|0.173||0.181|
|A1|2.40||2.72|0.094||0.107|
|b|0.61||0.88|0.024||0.034|
|b1|1.14||1.70|0.044||0.066|
|c|0.49||0.70|0.019||0.027|
|c2|1.23||1.32|0.048||0.052|
|D|8.95||9.35|0.352||0.368|
|e|2.40||2.70|0.094||0.106|
|e1|4.95||5.15|0.194||0.202|
|E|10||10.40|0.393||0.410|
|L|13||14|0.511||0.551|
|L1|3.50||3.93|0.137||0.154|
|L2|1.27||1.40|0.050||0.055|
||||||||



**==> picture [405 x 298] intentionally omitted <==**

12/15 

**STP200NF04 - STB200NF04 - STB200NF04-1** 

## **D[2] PAK FOOTPRINT** 

## **TUBE SHIPMENT (no suffix)*** 

## **TAPE AND REEL SHIPMENT (suffix ”T4”)*** 

|||||REEL MECHANICAL DATA|REEL MECHANICAL DATA||
|---|---|---|---|---|---|---|
|wee<br>i<br>ee af ait nod<br>-<br>:|||“|<br>=a<br>T|**DIM.**<br>**mm**<br>**MIN.**<br>**MAX.**|**inch**<br>**MIN.**<br>**MAX.**||
|**DIM.**<br>**mm**<br>**inch**<br>**MIN.**<br>**MAX.**<br>**MIN.**<br>**MAX.**<br>A0<br>10.5<br>10.7<br>0.413<br>0.421<br>B0<br>15.7<br>15.9<br>0.618<br>0.626<br>TAPE MECHANICAL DATA<br>ral<br>_ =<br>*y<br>/<br>callg<br>-<br>;<br>|<br>Tita<br>|<br>,<br>ay<br>of<br>Ps,<br>iat<br>\<br>a’, tf<br>“|<br>an<br>|<br>4<br>—<br>J<br>‘<br>Pull radius<br>fia=<br>reader<br>NN<br>ot tape wierd<br>|<br>at feub:<br>'<br>i<br>a Sen min<br>~<br>~<br>whith<br>~~——~~<br>~~a ae ~~~~**ee** ~~~~**ee**~~<br>.<br>~~ee ee ee~~<br>ft<br>.||||A<br>330<br>B<br>1.5<br>C<br>12.8<br>13.2<br>D<br>20.2<br>G<br>24.4<br>26.4<br>N<br>100<br>T<br>30.4<br>**BASE QTY**<br>1000<br>~~/_——} ~~<br>-<br>oP<br>5<br>pt|12.992<br>0.059<br>0.504<br>0.520<br>0795<br>0.960<br>1.039<br>3.937<br>1.197<br>**BULK QTY**<br>1000<br> ~~J~~<br>snpncta**n**ue<br>tee ie<br>onte||
|D<br>1.5<br>1.6<br>0.059<br>0.063<br>D1<br>1.59<br>1.61<br>0.062<br>0.063<br>~~ee ee~~<br>~~ee ee ee~~|||re||||
|E<br>1.65<br>1.85<br>0.065<br>0.073|||||||
|F<br>11.4<br>11.6<br>0.449<br>0.456|||||||
|K0<br>4.8<br>5.0<br>0.189<br>0.197|||||||
|P0<br>3.9<br>4.1<br>0.153<br>0.161<br>P1<br>11.9<br>12.1<br>0.468<br>0.476<br>P2<br>1.9<br>2.1<br>0.075<br>0.082<br>R<br>50<br>1.574<br>T<br>0.25<br>0.35<br>0.0098 0.0137<br>W<br>23.7<br>24.3<br>0.933<br>0.956<br>~~ee ee ee ee eee~~<br>~~ee ee ee ee ee~~ <br>~~ee ee ee ee ee~~ <br>~~ee ee ee ee ee~~||VemDirectionofFeed<br>TAL<br>—<br> a<br>hn.<br> nana<br>f<br>oP<br>Bin<br>a<br>k<br>k<br>EF<br>4<br>PEER DIRECTION,<br>Bening radius|||||
|* on sales type|||||||



13/15 

**STP200NF04 - STB200NF04 - STB200NF04-1** 

## **Table 10: Revision History** 

|**Date**|**Revision**|**Description of Changes**|
|---|---|---|
|28-Sep-2004|2|New Stylesheet. No Content Change|
|11-Oct-2004|3|Final datasheet|



14/15 

**STP200NF04 - STB200NF04 - STB200NF04-1** 

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 

The ST logo is a registered trademark of STMicroelectronics 

All other names are the property of their respective owners 

- © 2004 STMicroelectronics - All Rights Reserved 

STMicroelectronics group of companies 

Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 

15/15 



## Links

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- [Supplier page](https://es.farnell.com/en-ES/stmicroelectronics/stb200nf04t4/mosfet-n-ch-40v-120a-to-263/dp/2807182)
---

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