# Power MOSFET, N Channel, 800 V, 17 A, 0.25 ohm, TO-263 (D2PAK), Surface Mount ![Product image](https://novapart.co/image/farnell:2098126/) **URL**: https://novapart.co/products/STB18NM80/power-mosfet-n-channel-800-v-17-a-025-ohm-to-263 **SKU**: STB18NM80 **Manufacturer**: STMICROELECTRONICS **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €1.9700 **Stock**: 1000+ **Lead Time**: 106 days (indicative) ## Description Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.25ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 3Pins | | Channel Type | N Channel | | Product Range | - | | Qualification | - | | Power Dissipation | 190W | | Transistor Mounting | Surface Mount | | Rds(On) Test Voltage | 10V | | Transistor Case Style | TO-263 (D2PAK) | | Drain Source Voltage Vds | 800V | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 17A | | Drain Source On State Resistance | 0.25ohm | | Gate Source Threshold Voltage Max | 4V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2098126/) **STB18NM80, STF18NM80, STP18NM80, STW18NM80** N-channel 800 V, 0.25 Ω, 17 A, MDmesh™ Power MOSFET in D²PAK, TO-220FP, TO-220 and TO-247 packages **Datasheet — production data** ## **Features** |**Order codes**|**VDSS**|**RDS(on)**
**max**|**ID**| |---|---|---|---| |STB18NM80|800 V|< 0.295Ω|17 A| |STF18NM80|800 V|< 0.295Ω|17 A(1)| |STP18NM80|800 V|< 0.295Ω|17 A| |STW18NM80|800 V|< 0.295Ω|17 A| 1. Limited only by maximum temperature allowed - 100% avalanche tested - Low input capacitance and gate charge **==> picture [179 x 153] intentionally omitted <==** **----- Start of picture text -----**
3 3
1 1 2
D²PAK
TO-220FP
3 3
2 2
1 1
TO-220 TO-247
**----- End of picture text -----**
- Low gate input resistance ## **Application** - Switching applications ## **Description** These N-channel Power MOSFETs are developed using STMicroelectronics’ revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST’s proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market. ## **Figure 1. Internal schematic diagram** **==> picture [220 x 171] intentionally omitted <==** **----- Start of picture text -----**
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**Table 1. Device summary** |**Order codes**|**Marking**|**Package**|**Packaging**| |---|---|---|---| |STB18NM80|18NM80|D²PAK|Tape and reel| |STF18NM80||TO-220FP|Tube| |STP18NM80||TO-220|| |STW18NM80||TO-247|| 1/21 May 2012 Doc ID 15421 Rev 5 This is information on a product in full production. _www.st.com_ |**Contents**|**STB18NM80, STF18NM80, STP18NM80, STW18NM80**| |---|---| |**Contents**|| |**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**| |**2**|**Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**| ||2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6| |**3**|**Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**| |**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10**| |**5**|**Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18**| |**6**|**Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20**| 2/21 Doc ID 15421 Rev 5 **STB18NM80, STF18NM80, STP18NM80, STW18NM80** **Electrical ratings** ## **1 Electrical ratings** ## **Table 2. Absolute maximum ratings** |**Table 2.**|**Absolute maximum ratings**|||||| |---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Value**||||**Unit**| |||**TO-220**|**D²PAK**|**TO-247**|**TO-220FP**|| |VDS|Drain-source voltage|800||||V| |VGS|Gate-source voltage|± 30||||V| |ID|Drain current (continuous) at
TC= 25 °C|17|||17(1)|A| |ID|Drain current (continuous) at
TC= 100 °C|10.71|||10.71(1)|A| |IDM
(2)|Drain current (pulsed)|68|||68(1)|A| |PTOT|Total dissipation at TC= 25 °C|190|||40|W| |VISO|Insulation withstand voltage (RMS)
from all three leads to external heat
sink (t = 1 s;TC= 25 °C)||||2500|V| |Tstg|Storage temperature|-65 to 150||||°C| |Tj|Max. operating junction temperature|150||||°C| 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area ## **Table 3. Thermal data** |**Table 3.**|**Thermal data**|||||| |---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Value**||||**Unit**| |||**TO-220**|**D²PAK**|**TO-247**|**TO-220FP**|| |Rthj-case|Thermal resistance junction-case|0.66|||3.13|°C/W| |Rthj-amb|Thermal resistance junction-amb|62.5||50|62.5|°C/W| |Rthj-pcb|Thermal resistance junction-pcb||30|||°C/W| |Tl|Maximum lead temperature for
soldering purpose|300||||°C| ## **Table 4. Avalanche characteristics** |**Table 4.**|**Avalanche characteristics**||| |---|---|---|---| |**Symbol**|**Parameter**|**Max value**|**Unit**| |IAS|Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)|4|A| |EAS|Single pulse avalanche energy
(starting Tj = 25 °C, ID= IAS, VDD= 50 V)|600|mJ| 3/21 Doc ID 15421 Rev 5 **STB18NM80, STF18NM80, STP18NM80, STW18NM80** **Electrical characteristics** ## **2 Electrical characteristics** (TCASE= 25 °C unless otherwise specified) ## **Table 5. On/off states** |**Table 5.**|**On/off states**|||||| |---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |V(BR)DSS|Drain-source breakdown
voltage|ID= 1 mA, VGS= 0|800|||V| |IDSS|Zero gate voltage drain
current (VGS= 0)|VDS= 800 V,
VDS= 800 V,Tc = 125 °C|||10
100|µA
µA| |IGSS|Gate body leakage current
(VDS= 0)|VGS= ± 30 V|||±100|nA| |VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 µA|3|4|5|V| |RDS(on)|Static drain-source
on-resistance|VGS= 10 V, ID= 8.5 A||0.25|0.295|Ω| ## **Table 6. Dynamic** |**Table 6.**|**Dynamic**|||||| |---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |gfs
(1)|Forward transconductance|VDS= 15 V, ID= 8.5 A|-|14|-|S| |Ciss
Coss
Crss|Input capacitance
Output capacitance
Reverse transfer
capacitance|VDS= 50 V, f = 1 MHz, VGS= 0|-|2070
210
29|-|pF
pF
pF| |Coss eq.
(2)|Equivalent output
capacitance|VGS= 0, VDS= 0 to 640 V|-|316|-|pF| |RG|Gate input resistance|f = 1 MHz Gate DC Bias = 0
Test Signal Level = 20 mV
Open Drain|-|4|-|Ω| |Qg
Qgs
Qgd|Total gate charge
Gate-source charge
Gate-drain charge|VDD= 640 V, ID= 17 A
VGS= 10 V
_(seeFigure 17)_|-|70
13
40|-|nC
nC
nC| 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/21 Doc ID 15421 Rev 5 **STB18NM80, STF18NM80, STP18NM80, STW18NM80** **Electrical characteristics** ## **Table 7. Switching times** |**Table 7.**|**Switching times**|||||| |---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |td(on)
tr
td(off)
tf|Turn-on delay time
Rise time
Turn-off delay time
Fall time|VDD= 400 V, ID= 8.5 A,
RG= 4.7Ω,VGS= 10 V
_(seeFigure 16 and_
_Figure 21)_|-|18
28
96
50|-|ns
ns
ns
ns| ## **Table 8. Source drain diode** |**Table 8.**|**Source drain diode**|||||| |---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |ISD
ISDM
(1)|Source-drain current
Source-drain current (pulsed)||-||17
68|A
A| |VSD
(2)|Forward on voltage|ISD= 17 A, VGS= 0|-||1.6|V| |trr
Qrr
IRRM|Reverse recovery time
Reverse recovery charge
Reverse recovery current|ISD= 17 A, di/dt = 100
A/µs, VDD= 100 V,
_(seeFigure 18)_|-|618
9.6
31.2||ns
µC
A| |trr
Qrr
IRRM|Reverse recovery time
Reverse recovery charge
Reverse recovery current|ISD= 17 A,
di/dt = 100 A/µs,
VDD= 100 V, Tj=150°C
_(seeFigure 18)_|-|822
13
31.8||ns
µC
A| 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% 5/21 Doc ID 15421 Rev 5 **STB18NM80, STF18NM80, STP18NM80, STW18NM80** **Electrical characteristics** ## **2.1 Electrical characteristics (curves)** ## **Figure 2. Safe operating area for TO-220, D²PAK** **==> picture [228 x 171] intentionally omitted <==** **----- Start of picture text -----**
ID
(A)
10
10µs
100µs
1ms
1 10ms
Tj=150°C
Tc=25°C
Single
pulse
0.1
0.1 1 10 100 VDS(V)
DS(on)
Operation in this area is
Limited by max R
**----- End of picture text -----**
## **Figure 4. Safe operating area for TO-247** **==> picture [228 x 171] intentionally omitted <==** **----- Start of picture text -----**
ID
(A)
10µs
10 100µs
1ms
10ms
1 Tj=150°C
Tc=25°C
Single
pulse
0.1
0.1 1 10 100 VDS(V)
DS(on)
Operation in this area is
Limited by max R
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## **Figure 6. Safe operating area for TO-220FP** **==> picture [228 x 171] intentionally omitted <==** **----- Start of picture text -----**
ID
(A)
10
10µs
100µs
1 1ms
10ms
Tj=150°C
0.1
Tc=25°C
Single
pulse
0.01
0.1 1 10 100 VDS(V)
DS(on)
Operation in this area is
Limited by max R
**----- End of picture text -----**
## **Figure 3. Thermal impedance for TO-220, D²PAK** **==> picture [174 x 168] intentionally omitted <==** ## **Figure 5. Thermal impedance for TO-247** **==> picture [175 x 169] intentionally omitted <==** **Figure 7. Thermal impedance for TO-220FP** **==> picture [175 x 169] intentionally omitted <==** 6/21 Doc ID 15421 Rev 5 **STB18NM80, STF18NM80, STP18NM80, STW18NM80** **Electrical characteristics** ## **Figure 8. Output characteristics** **==> picture [228 x 171] intentionally omitted <==** **----- Start of picture text -----**
ID
(A)
VGS=10V
40
35
30
7V
25
20
15
10
6V
5
5V
0
0 5 10 15 20 VDS(V)
**----- End of picture text -----**
## **Figure 9. Transfer characteristics** **==> picture [228 x 171] intentionally omitted <==** **----- Start of picture text -----**
ID
(A)
40 V DS =20V
35
30
25
20
15
10
5
0
0 2 4 6 8 10 VGS(V)
**----- End of picture text -----**
## **Figure 10. Normalized BVDSS vs temperature Figure 11. Static drain-source on-resistance** **==> picture [462 x 176] intentionally omitted <==** **----- Start of picture text -----**
BVDSS RDS(on)
(norm) (Ω)
I D =1mA
1.06 0.28 VGS=10V
1.03
0.26
1.00
0.24
0.98
0.22
0.95
0.92 0.2
-50 -25 0 25 50 75 100 TJ(°C) 0 5 10 15 ID(A)
**----- End of picture text -----**
## **Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations** **==> picture [462 x 177] intentionally omitted <==** **----- Start of picture text -----**
VGS 700 C
(V) VDD=640V VGS (pF)
12 600 100000
ID=17A
VDS
10 500
10000
8 400 Ciss
1000
6 300
100
4 200 Coss
Crss
2 100 10
0 0 1
0 20 40 60 80 Qg(nC) 0.1 1 10 100 1000 VDS(V)
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7/21 Doc ID 15421 Rev 5 **STB18NM80, STF18NM80, STP18NM80, STW18NM80** **Electrical characteristics** **Figure 14. Normalized gate threshold voltage vs temperature** **Figure 15. Normalized on-resistance vs temperature** **==> picture [462 x 176] intentionally omitted <==** **----- Start of picture text -----**
VGS(th) RDS(on)
(norm) (norm)
1.10 I D =250µA 2.1 ID=8.5A
1.9 VGS=10V
1.00 1.7
1.5
0.90 1.3
1.1
0.80 0.9
0.7
0.70 0.5
-50 -25 0 25 50 75 100 TJ(°C) -50 -25 0 25 50 75 100 TJ(°C)
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8/21 Doc ID 15421 Rev 5 **STB18NM80, STF18NM80, STP18NM80, STW18NM80** **Test circuits** ## **3 Test circuits** **Figure 16. Switching times test circuit for Figure 17. Gate charge test circuit resistive load** **==> picture [462 x 162] intentionally omitted <==** **----- Start of picture text -----**
VDD
12V 47kΩ
1kΩ
100nF
RL 2200 3.3
μF μF
VDD IG=CONST
VD Vi=20V=VGMAX 100Ω D.U.T.
VGS
2200
RG D.U.T. μF 2.7kΩ VG
PW
47kΩ
1kΩ
PW
AM01468v1 AM01469v1
**----- End of picture text -----**
**Figure 18. Test circuit for inductive load Figure 19. Unclamped inductive load test switching and diode recovery times circuit** **==> picture [462 x 183] intentionally omitted <==** **----- Start of picture text -----**
L
A A A
D
G D.U.T. FASTDIODE L=100μH VD 2200 3.3
S B 3.3 1000 μF μF VDD
25 Ω B B D μF μF VDD ID
G
RG S
Vi D.U.T.
Pw
AM01470v1 AM01471v1
Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform
**----- End of picture text -----**
**==> picture [462 x 162] intentionally omitted <==** **----- Start of picture text -----**
V(BR)DSS ton toff
VD tdon tr tdoff tf
90% 90%
IDM
10%
ID 0 10% VDS
VDD VDD 90%
VGS
AM01472v1 0 10% AM01473v1
**----- End of picture text -----**
9/21 Doc ID 15421 Rev 5 **STB18NM80, STF18NM80, STP18NM80, STW18NM80** **Package mechanical data** ## **4 Package mechanical data** In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. **Table 9. D²PAK (TO-263) mechanical data** |**Dim.**|**mm**|**mm**|**mm**| |---|---|---|---| ||**Min.**|**Typ.**|**Max.**| |A|4.40||4.60| |A1|0.03||0.23| |b|0.70||0.93| |b2|1.14||1.70| |c|0.45||0.60| |c2|1.23||1.36| |D|8.95||9.35| |D1|7.50||| |E|10||10.40| |E1|8.50||| |e||2.54|| |e1|4.88||5.28| |H|15||15.85| |J1|2.49||2.69| |L|2.29||2.79| |L1|1.27||1.40| |L2|1.30||1.75| |R||0.4|| |V2|0°||8°| 10/21 Doc ID 15421 Rev 5 **STB18NM80, STF18NM80, STP18NM80, STW18NM80** **Package mechanical data** **==> picture [173 x 11] intentionally omitted <==** **----- Start of picture text -----**
Figure 22. D²PAK (TO-263) drawing
**----- End of picture text -----**
**==> picture [405 x 320] intentionally omitted <==** **----- Start of picture text -----**
0079457_T
**----- End of picture text -----**
## **Figure 23. D²PAK footprint[(a)]** **==> picture [405 x 232] intentionally omitted <==** **----- Start of picture text -----**
16.90
12.20 5.08
1.60
3.50
9.75
Footprint
**----- End of picture text -----**
**==> picture [130 x 7] intentionally omitted <==** **----- Start of picture text -----**
a. All dimensions are in millimeters
**----- End of picture text -----**
11/21 Doc ID 15421 Rev 5 **STB18NM80, STF18NM80, STP18NM80, STW18NM80** **Package mechanical data** **Table 10. TO-220FP mechanical data** |**Dim.**|**mm**|**mm**|**mm**| |---|---|---|---| ||**Min.**|**Typ.**|**Max.**| |A|4.4||4.6| |B|2.5||2.7| |D|2.5||2.75| |E|0.45||0.7| |F|0.75||1| |F1|1.15||1.70| |F2|1.15||1.70| |G|4.95||5.2| |G1|2.4||2.7| |H|10||10.4| |L2||16|| |L3|28.6||30.6| |L4|9.8||10.6| |L5|2.9||3.6| |L6|15.9||16.4| |L7|9||9.3| |Dia|3||3.2| 12/21 Doc ID 15421 Rev 5 **STB18NM80, STF18NM80, STP18NM80, STW18NM80** **Package mechanical data** ## **Figure 24. TO-220FP drawing** **==> picture [405 x 577] intentionally omitted <==** **----- Start of picture text -----**
7012510_Rev_K_B
**----- End of picture text -----**
13/21 Doc ID 15421 Rev 5 **STB18NM80, STF18NM80, STP18NM80, STW18NM80** **Package mechanical data** **Table 11. TO-220 type A mechanical data** |**Dim.**|**mm**|**mm**|**mm**| |---|---|---|---| ||**Min.**|**Typ.**|**Max.**| |A|4.40||4.60| |b|0.61||0.88| |b1|1.14||1.70| |c|0.48||0.70| |D|15.25||15.75| |D1||1.27|| |E|10||10.40| |e|2.40||2.70| |e1|4.95||5.15| |F|1.23||1.32| |H1|6.20||6.60| |J1|2.40||2.72| |L|13||14| |L1|3.50||3.93| |L20||16.40|| |L30||28.90|| |∅P|3.75||3.85| |Q|2.65||2.95| 14/21 Doc ID 15421 Rev 5 **STB18NM80, STF18NM80, STP18NM80, STW18NM80** **Package mechanical data** **Figure 25. TO-220 type A drawing** **==> picture [405 x 383] intentionally omitted <==** **----- Start of picture text -----**
0015988_typeA_Rev_S
**----- End of picture text -----**
15/21 Doc ID 15421 Rev 5 **STB18NM80, STF18NM80, STP18NM80, STW18NM80** **Package mechanical data** ## **Table 12. TO-247 mechanical data** |**Dim.**|**mm.**|**mm.**|**mm.**| |---|---|---|---| ||**Min.**|**Typ.**|**Max.**| |A|4.85||5.15| |A1|2.20||2.60| |b|1.0||1.40| |b1|2.0||2.40| |b2|3.0||3.40| |c|0.40||0.80| |D|19.85||20.15| |E|15.45||15.75| |e|5.30|5.45|5.60| |L|14.20||14.80| |L1|3.70||4.30| |L2||18.50|| |∅P|3.55||3.65| |∅R|4.50||5.50| |S|5.30|5.50|5.70| 16/21 Doc ID 15421 Rev 5 **STB18NM80, STF18NM80, STP18NM80, STW18NM80** **Package mechanical data** **==> picture [132 x 11] intentionally omitted <==** **----- Start of picture text -----**
Figure 26. TO-247 drawing
**----- End of picture text -----**
**==> picture [401 x 394] intentionally omitted <==** **----- Start of picture text -----**
0075325_G
**----- End of picture text -----**
17/21 Doc ID 15421 Rev 5 **STB18NM80, STF18NM80, STP18NM80, STW18NM80** **Packaging mechanical data** ## **5 Packaging mechanical data** **Table 13. D²PAK (TO-263) tape and reel mechanical data** ||**Tape**|**Tape**||**Reel**|**Reel**| |---|---|---|---|---|---| |**Dim.**|**mm**||**Dim.**|**mm**|| ||**Min.**|**Max.**||**Min.**|**Max.**| |A0|10.5|10.7|A||330| |B0|15.7|15.9|B|1.5|| |D|1.5|1.6|C|12.8|13.2| |D1|1.59|1.61|D|20.2|| |E|1.65|1.85|G|24.4|26.4| |F|11.4|11.6|N|100|| |K0|4.8|5.0|T||30.4| |P0|3.9|4.1|||| |P1|11.9|12.1||Base qty|1000| |P2|1.9|2.1||Bulk qty|1000| |R|50||||| |T|0.25|0.35|||| |W|23.7|24.3|||| 18/21 Doc ID 15421 Rev 5 **STB18NM80, STF18NM80, STP18NM80, STW18NM80** **Packaging mechanical data** ## **Figure 27. Tape** **==> picture [350 x 317] intentionally omitted <==** **----- Start of picture text -----**
10 pitches cumulative
tolerance on tape +/- 0.2 mm
Top cover P0 D P2
T tape
E
000 00 000 6 00
F
K0 W
B0
A0 P1 D1
————_
User direction of feed
R
cn a ea ca l la :
erates
DDD a |
—_—_—_—_> Bending radius
User direction of feed
AM08852v2
**----- End of picture text -----**
## **Figure 28. Reel** **==> picture [377 x 249] intentionally omitted <==** **----- Start of picture text -----**
T
REEL DIMENSIONS
40mm min.
Access hole
A - At sl ot location
B
D
C
N
A
Full radius Tape slot G measured at hub
in core for
tape start 25 mm min.
width
AM08851v2
**----- End of picture text -----**
19/21 Doc ID 15421 Rev 5 **STB18NM80, STF18NM80, STP18NM80, STW18NM80** **Revision history** ## **6 Revision history** ## **Table 14. Document revision history** |**Date**|**Revision**|**Changes**| |---|---|---| |25-Feb-2009|1|First release.| |07-Apr-2009|2|_Section 4: Package mechanical data_has been modified.| |20-Apr-2009|3|RDS(on)max value has been corrected.| |09-Sep-2009|4|Document status promoted from preliminary data to datasheet.| |25-May-2012|5|_Figure 12: Gate charge vs gate-source voltage_has been
updated.
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