# Power MOSFET, N Channel, 800 V, 14 A, 0.3 ohm, TO-263 (D2PAK), Surface Mount

![Product image](https://novapart.co/image/farnell:3129785/)

**URL**: https://novapart.co/products/STB15N80K5/power-mosfet-n-channel-800-v-14-a-03-ohm-to-263
**SKU**: STB15N80K5
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €2.2000
**Stock**: 200+
**Lead Time**: 113 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V;

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | MDmesh K5 |
| Qualification | - |
| Power Dissipation | 190W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-263 (D2PAK) |
| Drain Source Voltage Vds | 800V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 14A |
| Drain Source On State Resistance | 0.3ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3129785/)

## **STB15N80K5, STF15N80K5, STP15N80K5, STW15N80K5** 

N-channel 800 V, 0.3 Ω typ., 14 A MDmesh™ K5 Power MOSFETs in D[2] PAK, TO-220FP, TO-220 and TO-247 packages − **Datasheet production data** TAB **Features Order code VDS RDS(on)max ID PTOT** 3 STB15N80K5 190 W 1 3 2 STF15N80K5 35 W **D[2] PAK** 1 800 V 0.375 Ω 14 A **TO-220FP** STP15N80K5 TAB 190 W STW15N80K5 ~~ain:~~ • Industry’s lowest RDS(on) x area 3 • Industry’s best figure of merit (FoM) 2 3 1 1 2 • Ultra low gate charge **TO-220 TO-247** • 100% avalanche tested • Zener-protected **Figure 1. Internal schematic diagram** D(2, TAB) **Applications** • Switching applications **Description** G(1) These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power S(3) density and high efficiency. AM01476v1 

**Table 1. Device summary** 

|**Order code**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STB15N80K5|15N80K5|D2PAK|Tape and reel|
|STF15N80K5||TO-220FP|Tube|
|STP15N80K5||TO-220||
|STW15N80K5||TO-247||



October 2014 

DocID023468 Rev 3 

1/23 

This is information on a product in full production. 

_www.st.com_ 

**Contents** 

**STB15N80K5, STF15N80K5, STP15N80K5, STW15N80K5** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10**|
||4.1<br>STB15N80K5, D²PAK (TO-263) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11|
||4.2<br>STP15N80K5, TO-220 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14|
||4.3<br>STF15N80K5, TO-220FP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16|
||4.4<br>STW15N80K5, TO-247  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18|
|**5**|**Packaging information  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20**|
|**6**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22**|



2/23 

DocID023468 Rev 3 

**STB15N80K5, STF15N80K5, STP15N80K5, STW15N80K5** 

**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2. Absolute maximum ratings** 

|**Symbol**<br>~~—_—~~|**Parameter**<br>~~—_—~~|**Value**|**Value**|**Unit**|
|---|---|---|---|---|
|||**D2PAK,**<br>**TO-220, TO-247**|**TO-220FP**||
|VGS<br>~~—_—~~|Gate- source voltage<br>~~—_—~~|± 30||V|
|ID<br>~~—_—~~<br>~~a~~|Drain current (continuous) at TC= 25 °C<br>~~—_—~~<br>~~a~~|14<br>~~a~~|14(1)<br>~~a~~|A<br>~~a~~|
|ID<br>~~a~~|Drain current (continuous) at TC= 100 °C<br>~~a~~|8.8<br>~~a~~|8.8(1)<br>~~a~~|A<br>~~a~~|
|IDM<br>(2)<br>~~a~~|Drain current (pulsed)<br>~~a~~|56<br>~~a~~|56(1)<br>~~a~~|A<br>~~a~~|
|PTOT<br>~~a~~|Total dissipation at TC= 25 °C<br>~~a~~|190<br>~~a~~|35<br>~~a~~|W<br>~~a~~|
|IAR|Max current during repetitive or single<br>pulse avalanche<br>(pulse width limited by Tjmax)|4||A|
|EAS|Single pulse avalanche energy<br>(starting TJ= 25 °C, ID=IAS, VDD= 50 V)|150||mJ|
|Viso|Insulation withstand voltage (RMS) from<br>all three leads to external heat sink<br>(t=1 s;TC=25 °C)||2500|V|
|dv/dt(3)<br>~~ee~~|Peak diode recovery voltage slope<br>~~ee~~|4.5<br>~~ee~~||V/ns|
|Tj<br>Tstg<br>~~ee~~|Operating junction temperature<br>Storage temperature<br>~~ee~~|-55 to 150<br>~~ee~~||°C|



2. Pulse width limited by safe operating area. 

3. ISD ≤ 14 A, di/dt ≤ 100 A/µs, VPeak ≤ V(BR)DSS 

**Table 3. Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Value**|**Value**|**Value**|**Unit**|
|---|---|---|---|---|---|---|
|||**TO-220**|**TO-247**|**D2PAK**|**TO-220FP**||
|Rthj-case|Thermal resistance junction-case<br>max|0.66|||3.6|°C/W|
|Rthj-amb|Thermal resistance junction-amb max|62.5|50||62.5||
|Rthj-pcb<br>(1)|Thermal resistance junction-pcb max|||30|||



1. When mounted on 1inch² FR-4 board, 2 oz Cu. 

DocID023468 Rev 3 3/23 ~~Be~~ 

**STB15N80K5, STF15N80K5, STP15N80K5, STW15N80K5** 

**Electrical characteristics** 

## **2 Electrical characteristics** 

(TCASE = 25 °C unless otherwise specified). 

**Table 4. On/off states** 

|**Symbol**<br>~~ee~~<br>~~a~~|**Parameter**<br>~~ee~~<br>~~es~~|**Test conditions**<br>~~ee~~<br>~~ee~~|**Min.**<br>~~ee~~<br>ee|**Typ.**<br>~~ee~~<br>~~ee~~|**Max.**<br>~~ee~~<br>~~ee~~|**Unit**<br>~~ee~~<br>~~ee~~|
|---|---|---|---|---|---|---|
|V(BR)DSS<br>~~a~~|Drain-source breakdown<br>voltage (VGS= 0)<br>~~es~~|ID= 1 mA<br>~~ee~~|800<br>ee|~~ee~~|~~ee~~|V<br>~~ee~~|
|IDSS<br>~~ee~~|Zero gate voltage drain<br>current (VGS= 0)<br>~~es~~<br>~~ee~~|VDS= 800 V<br>~~ee~~|~~ee~~|~~ee~~|1<br>~~ee~~|µA<br>~~ee~~|
|||VDS= 800 V, Tc=125 °C<br>~~ee~~<br>~~ee~~|~~ee~~<br>~~ee~~|~~ee~~<br>~~ee~~|50<br>~~ee~~<br>~~ee~~|µA<br>~~ee~~<br>~~ee~~|
|IGSS<br>~~i~~<br>~~a~~|Gate body leakage current<br>(VDS= 0)<br>~~i~~|VGS= ± 20 V<br>~~ee~~<br>~~a~~|~~ee~~|~~ee~~|±10<br>~~ee~~|µA<br>~~ee~~|
|VGS(th)<br>~~a~~<br>~~a~~|Gate threshold voltage<br>~~a~~<br>~~es~~|VDS= VGS, ID= 100 µA<br>~~a~~<br>~~a~~|3<br>~~a~~|4<br>~~a~~|5<br>~~a~~|V<br>~~a~~|
|RDS(on)<br>~~a~~|Static drain-source on<br>resistance<br>~~es~~|VGS= 10 V, ID= 7 A<br>~~a~~||0.3|0.375|Ω|



**Table 5. Dynamic** 

|**Symbol**<br>~~a~~<br>~~——~~|**Parameter**<br>~~ee~~<br>~~——~~|**Test conditions**<br>~~ee eee~~<br>~~_oxARRR:~~|**Min.**<br>~~eee~~<br>~~_oxARRR:~~|**Typ.**<br>~~eee~~<br>~~_oxARRR:~~|**Max.**<br>~~eee~~<br>~~_oxARRR:~~|**Unit**<br>~~eee~~<br>~~_oxARRR:~~|
|---|---|---|---|---|---|---|
|Ciss<br>~~a~~<br>~~|~~<br>~~——~~|Input capacitance<br>~~ee ~~<br>~~|~~<br>~~——~~|VDS=100 V, f=1 MHz, VGS=0<br> ~~ee eee~~<br>~~|~~<br>~~=~~<br>~~>~~<br>~~=~~<br>~~_oxARRR:~~|-<br>~~eee~~<br>~~|~~<br>~~=~~<br>~~_oxARRR:~~|1100<br>~~eee~~<br>~~|~~<br>~~=~~<br>~~_oxARRR:~~|-<br>~~eee~~<br>~~|~~<br>~~=~~<br>~~_oxARRR:~~|pF<br>~~eee~~<br>~~|~~<br>~~=~~<br>~~_oxARRR:~~|
|Coss<br>~~>~~<br>~~——~~|Output capacitance<br>~~>~~<br>~~——~~||-<br>~~>~~<br>~~=~~<br>~~_oxARRR:~~|85<br>~~>~~<br>~~=~~<br>~~_oxARRR:~~|-<br>~~>~~<br>~~=~~<br>~~_oxARRR:~~|pF<br>~~>~~<br>~~=~~<br>~~_oxARRR:~~|
|Crss<br>~~——~~|Reverse transfer<br>capacitance<br>~~——~~||-<br>~~_oxARRR:~~|1.5<br>~~_oxARRR:~~|-<br>~~_oxARRR:~~|pF<br>~~_oxARRR:~~|
|Co(tr)<br>(1)<br>~~——~~<br>~~of~~|Equivalent capacitance time<br>related<br>~~——~~<br>~~ee~~<br>~~of~~|VGS= 0, VDS= 0 to 640 V<br>~~_oxARRR:~~<br>~~ee~~<br>~~an~~|-<br>~~_oxARRR:~~<br>~~ee~~|113<br>~~_oxARRR:~~<br>~~ee~~|-<br>~~_oxARRR:~~<br>~~ee~~|pF<br>~~_oxARRR:~~<br>~~ee~~|
|Co(er)<br>(2)<br>~~of~~|Equivalent capacitance<br>energy related<br>~~ee~~<br>~~of~~||-<br>~~ee~~<br>~~an~~|49<br>~~ee~~<br>~~an~~|-<br>~~ee~~<br>~~an~~|pF<br>~~ee~~<br>~~an~~|
|RG<br>~~a~~|Intrinsic gate resistance<br>~~a~~|f = 1MHz, ID=0<br>~~a~~|-<br>~~a~~|4.5<br>~~a~~|-<br>~~a~~|Ω<br>~~a~~|
|Qg<br>~~——~~<br>~~———~~|Total gate charge<br>~~——~~<br>~~———~~|VDD= 640 V, ID= 14 A<br>VGS=10 V<br>_(seeFigure 20)_<br>~~=~~<br>~~=~~|-<br>~~=~~|32<br>~~=~~|-<br>~~=~~|nC<br>~~=~~|
|Qgs<br>~~———~~|Gate-source charge<br>~~———~~||-<br>~~=~~|6<br>~~=~~|-<br>~~=~~|nC<br>~~=~~|
|Qgd<br>~~———~~<br>~~TT~~|Gate-drain charge<br>~~———~~<br>~~TT~~||-<br>~~=~~<br>~~=~~|22<br>~~=~~<br>~~=~~|-<br>~~=~~<br>~~=~~|nC<br>~~=~~<br>~~=~~|



1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 

2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS 

4/23 

DocID023468 Rev 3 

**STB15N80K5, STF15N80K5, STP15N80K5, STW15N80K5** 

**Electrical characteristics** 

**Table 6. Switching times** 

||**Table 6. Switching times**|**Table 6. Switching timesg times times**|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|td(on)|Turn-on delay time|VDD= 400 V, ID= 7 A,<br>RG=4.7Ω, VGS=10 V<br>_(seeFigure 19 and24)_|-|19|-|ns|
|tr|Rise time||-|17.6|-|ns|
|td(off)|Turn-off delay time||-|44|-|ns|
|tf|Fall time||-|10|-|ns|



tf Fall time 

**Table 7. Source drain diode** 

|**Symbol**<br>~~a~~|**Parameter**<br>~~a~~|**Test conditions**<br>~~a~~|**Min.**<br>~~a~~|**Typ.**<br>~~a~~|**Max.**<br>~~a~~|**Unit**<br>~~a~~|
|---|---|---|---|---|---|---|
|ISD<br>~~a~~|Source-drain current<br>~~a~~|~~a~~|-<br>~~a~~|~~a~~|14<br>~~a~~|A<br>~~a~~|
|ISDM|Source-drain current (pulsed)||-||56|A|
|VSD<br>(1)|Forward on voltage|ISD= 14 A, VGS=0|-||1.5|V|
|trr|Reverse recovery time|ISD= 14 A, VDD= 60 V<br>di/dt = 100 A/µs,<br>_(seeFigure 21)_|-|445||ns|
|Qrr|Reverse recovery charge||-|8.2||μC|
|IRRM|Reverse recovery current||-|37||A|
|trr<br>~~——~~|Reverse recovery time<br>~~——~~|ISD= 14 A,VDD= 60 V<br>di/dt=100 A/µs,<br>Tj=150 °C<br>_(seeFigure 21)_<br>~~Fe~~|-<br>~~Fe~~|580<br>~~Fe~~|~~Fe~~|ns<br>~~Fe~~|
|Qrr<br>~~——~~|Reverse recovery charge<br>~~——~~||-<br>~~Fe~~|10<br>~~Fe~~|~~Fe~~|μC<br>~~Fe~~|
|IRRM<br>~~——~~|Reverse recovery current<br>~~——~~||-<br>~~Fe~~|35<br>~~Fe~~|~~Fe~~|A<br>~~Fe~~|



The built-in back-to-back Zener diodes have been specifically designed to enhance the ESD capability of the device. The Zener voltage is appropriate for efficient and cost-effective intervention to protect the device integrity. These integrated Zener diodes thus eliminate the need for external components. 

DocID023468 Rev 3 

5/23 

**STB15N80K5, STF15N80K5, STP15N80K5, STW15N80K5** 

**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**Figure 2. Safe operating area for D[2] PAK and Figure 3. Thermal impedance for D[2] PAK and TO-220 TO-220** 

**==> picture [272 x 591] intentionally omitted <==**

**----- Start of picture text -----**<br>
ID AM15432v1<br>(A) Pe<br>eePT TT ielSP ARTSYe TT<br>pL SINT TENTH<br>COCPa 1µs<br>10 IIE!ee UUOACINRC 10µs<br>Sa SR 100µs<br>P| TT ANT oT TT NP TN<br>|| ty Lb||| 1ms<br>1 SaaS fare Tj=150°C meal 10ms<br>A Tc=25°C cet<br>PT TAT TTT<br>pA Single ail<br>pulse<br>0.1<br>0.1 1 10 100 VDS(V)<br>Figure 4. Safe operating area for TO-220FP Figgure 5. Thermal impedance for TO-220FP<br>ID AM15433v1<br>(A)<br>ee AN<br>| 1µs<br>10 NZS<br>10µs<br>, | ZO il<br>| | AT TT SA 100µs<br>1 UN 1ms<br>ACi 10ms<br>PALI Pt mail<br>Tj=150°C<br>0.1 40 Tc=25°C mail<br>Single<br>0.01 PoPTTT Tit pulse [Tayml<br>0.1 1 10 100 VDS(V)<br>Figure 6. Safe operating area for TO-247 Figgure 7. Thermal impedance for TO-247<br>ID AM15434v1<br>(A)<br>(eeee ed ey ee<br>Ae<br>pT ETN ALN NNT 1µs<br>AL<br>10µs<br>10 AI SU A<br>IAT TNS<br>PTT Try PAU TT Tis Ss 100µs<br>EePt [tt] L PALITTT TTI NA TT ATT 1ms<br>ey 40AUT TT TEETTSOE<br>10ms<br>1 PL WV Tj=150°C mill<br>Tc=25°C<br>ey A PTT<br>A Single aL<br>pulse<br>0.1<br>0.1 1 10 100 VDS(V)<br>6/23 DocID023468 Rev 3<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>**----- End of picture text -----**<br>


## **Figgure 5. Thermal impedance for TO-220FP** 

**Figgure 7. Thermal impedance for TO-247** 

**STB15N80K5, STF15N80K5, STP15N80K5, STW15N80K5** 

**Electrical characteristics** 

**Figure 8. Output characteristics** 

**Figure 9. Transfer characteristics** 

**==> picture [421 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM15435v1 AM15436v1<br>ID ID<br>(A) (A)<br>VGS= 10 V<br>30 30 V DS = 20 V<br>VGS= 9 V<br>Pt| || ty a/ |_|<br>24 24<br>VGS= 8 V<br>18 18<br>12 V GS = 7 V 12<br>fort | fs<br>6 VGS= 6 V 6<br>Faas tf<br>0 f+ 0 Catt<br>0 4 8 12 16 VDS(V) 4 6 8 10 VGS(V)<br>**----- End of picture text -----**<br>


**Figure 10. Gate charge vs gate-source voltage** 

**Figure 11. Static drain-source on-resistance** 

**==> picture [426 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
V(V)GS | VDD=640 V AM15443v1V(V)DS RDS(on)(Ω) AM15441v1<br>12 VDS 600<br>ID=14 A 0.5 VGS=10V<br>10 mM 500 iaeeeeeeeeee<br>\ af 0.4 CEE<br>8 400<br>0.3<br>6 Am 300 Sa<br>ase | Eee<br>4 TNT 200 0.2 PEREEEE EEE<br>2 ACAEEEH 100 0.1 Pi tt ety ttt ty<br>0 AAG 0 | 0 CECEGEEe<br>0 5 10 15 20 25 30 Qg(nC) 0 5 10 15 20 25 ID(A)<br>**----- End of picture text -----**<br>


**Figure 12. Capacitance variations** 

**==> picture [199 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
C AM15442v1<br>(pF)<br>1000 Ciss<br>100<br>Coss<br>10<br>Crss<br>1 EHH Ht<br>0.1 1 10 100 VDS(V)<br>**----- End of picture text -----**<br>


**Figure 13. Source-drain diode forward characteristics** 

**==> picture [193 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
VSD AM15439v1<br>(V) TJ=-50°C<br>0.9<br>TJ=25°C<br>0.8<br>0.7<br>TJ=150°C<br>0.6 att a<br>4 6 8 10 12 ISD(A)<br>**----- End of picture text -----**<br>


DocID023468 Rev 3 

7/23 

**STB15N80K5, STF15N80K5, STP15N80K5, STW15N80K5** 

**Electrical characteristics** 

**Figure 14. Normalized gate threshold voltage vs temperature** 

**Figure 15. Normalized on-resistance vs temperature** 

**==> picture [433 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
VGS(th) AM15440v1 RDS(on) AM15437v1<br>(norm) VDS = VGS (norm) VGS = 10 V<br>1.1 ID = 100 µA ID = 7 A<br>2.4<br>1 PONT Seer<br>2<br>NI Fp | ttt dt} dt dT A<br>0.9<br>PLEIN ET CEE<br>1.6<br>0.8 SERRERNGEE PERERA<br>x PPE rT [Tyr] EH<br>1.2<br>0.7 PENT) |<br>0.6 HN 0.8 EERE<br>0.5 LEP T TET | 0.4 CeCeAoAeer<br>-75 -25 25 75 125 TJ(°C) -75 -25 25 75 125 TJ(°C)<br>**----- End of picture text -----**<br>


**Figure 16. Output capacitance stored energy** 

**Figure 17. Normalized VDS vs temperature** 

**==> picture [425 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
Eoss AM15444v1 VDS AM15438v1<br>(µJ) (norm)<br>a, PTT TTT<br>1.1 ID = 1mA<br>12<br>1.06<br>8 1.02<br>FERRE fF | | dt dt dpa Et<br>| 0.98 FERRERS<br>4<br>— 0.94<br>0 PE 0.9 CAE eee<br>0 200 400 600 VDS(V) -75 -25 25 75 125 TJ(°C)<br>**----- End of picture text -----**<br>


**Figure 18. Maximum avalanche energy vs temperature** 

8/23 DocID023468 Rev 3 ~~LL~~ 

**STB15N80K5, STF15N80K5, STP15N80K5, STW15N80K5** 

**Test circuits** 

## **3 Test circuits** 

**Figure 19. Switching times test circuit for resistive load** 

**Figure 20. Gate charge test circuit** 

**==> picture [442 x 151] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDD<br>12V 47kΩ<br>1kΩ<br>100nF<br>RL 2200 3.3<br>μF μF<br>VDD IG=CONST<br>VD Vi=20V=VGMAX 100Ω D.U.T.<br>VGS<br>2200<br>RG D.U.T. μF 2.7kΩ VG<br>PW<br>47kΩ<br>1kΩ<br>PW<br>AM01468v1 AM01469v1<br>**----- End of picture text -----**<br>


**Figure 21. Test circuit for inductive load Figure 22. Unclamped inductive load test circuit switching and diode recovery times** 

**==> picture [445 x 314] intentionally omitted <==**

**----- Start of picture text -----**<br>
L<br>A A A<br>D<br>FAST L=100μH VD<br>G D.U.T. DIODE 2200 3.3<br>S B 3.3 1000 μF μF VDD<br>25 Ω B B D μF μF VDD ID<br>G<br>RG S<br>Vi D.U.T.<br>Pw<br>AM01470v1 AM01471v1<br>Figure 23. Unclamped inductive waveform Figure 24. Switching time waveform<br>V(BR)DSS ton toff<br>VD tdon tr tdoff tf<br>90% 90%<br>IDM<br>10%<br>ID 0 10% VDS<br>VDD VDD 90%<br>VGS<br>AM01472v1 0 10% AM01473v1<br>**----- End of picture text -----**<br>


DocID023468 Rev 3 

9/23 

**STB15N80K5, STF15N80K5, STP15N80K5, STW15N80K5** 

**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com_ . ECOPACK[®] is an ST trademark. 

10/23 

DocID023468 Rev 3 

**STB15N80K5, STF15N80K5, STP15N80K5, STW15N80K5** 

**Package mechanical data** 

## **4.1 STB15N80K5, D²PAK (TO-263)** 

## **Figure 25. D²PAK (TO-263) drawing** 

**==> picture [30 x 6] intentionally omitted <==**

**----- Start of picture text -----**<br>
0079457_U<br>**----- End of picture text -----**<br>


DocID023468 Rev 3 

11/23 

**STB15N80K5, STF15N80K5, STP15N80K5, STW15N80K5** 

**Package mechanical data** 

**Table 9. D²PAK (TO-263) mechanical data** 

||**Table 9. D²PAK (TO-263) mechanical data(TO-263) mechanical dataTO-263) mechanical data) mechanical data mechanical data**|**Table 9. D²PAK (TO-263) mechanical data(TO-263) mechanical dataTO-263) mechanical data) mechanical data mechanical data**|**Table 9. D²PAK (TO-263) mechanical data(TO-263) mechanical dataTO-263) mechanical data) mechanical data mechanical data**|
|---|---|---|---|
|**Dim.**<br>~~a~~|**mm**<br>~~a~~<br>~~ee~~|||
||**Min.**<br>~~a~~|**Typ.**<br>~~a~~<br>~~ee~~|**Max.**<br>~~a~~|
|A<br>~~a~~|4.40|~~ee~~|4.60|
|A1<br>~~a~~|0.03||0.23|
|b<br>~~a~~|0.70||0.93|
|b2<br>~~a~~|1.14||1.70|
|c<br>~~a~~|0.45||0.60|
|c2<br>~~a~~<br>~~es~~|1.23||1.36|
|D<br>~~es~~|8.95||9.35|
|D1<br>~~es~~<br>~~a~~|7.50|7.75|8.00|
|D2<br>~~a~~|1.10|1.30|1.50|
|E<br>~~a~~|10||10.40|
|E1<br>~~a~~|8.50|8.70|8.90|
|E2<br>~~a~~<br>~~es~~|6.85|7.05|7.25|
|e<br>~~es~~||2.54||
|e1<br>~~es~~<br>~~a~~|4.88||5.28|
|H<br>~~a~~|15||15.85|
|J1<br>~~a~~|2.49||2.69|
|L<br>~~a~~|2.29||2.79|
|L1<br>~~a~~<br>~~es~~|1.27||1.40|
|L2<br>~~es~~|1.30||1.75|
|R<br>~~es~~<br>~~a~~||0.4||
|V2<br>~~a~~|0°||8°|



12/23 

DocID023468 Rev 3 

**STB15N80K5, STF15N80K5, STP15N80K5, STW15N80K5** 

**Package mechanical data** 

## **Figure 26. D²PAK footprint[(a)]** 

**==> picture [24 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
Footprint<br>**----- End of picture text -----**<br>


- a. All dimension are in millimeters 

DocID023468 Rev 3 

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**STB15N80K5, STF15N80K5, STP15N80K5, STW15N80K5** 

**Package mechanical data** 

## **4.2 STP15N80K5, TO-220** 

## **Figure 27. TO-220 type A drawing** 

**==> picture [64 x 6] intentionally omitted <==**

**----- Start of picture text -----**<br>
0015988_typeA_Rev_S<br>**----- End of picture text -----**<br>


14/23 

DocID023468 Rev 3 

**STB15N80K5, STF15N80K5, STP15N80K5, STW15N80K5** 

**Package mechanical data** 

**Table 10. TO-220 type A mechanical data** 

**mm Dim. Min. Typ. Max.** ~~es~~ A 4.40 4.60 ~~a ee ee~~ b 0.61 0.88 ~~a~~ b1 1.14 1.70 ~~a~~ c 0.48 0.70 ~~a~~ D 15.25 15.75 ~~Ge~~ D1 1.27 ~~Ge~~ E 10 10.40 ~~a~~ e 2.40 2.70 ~~a~~ e1 4.95 5.15 ~~a~~ F 1.23 1.32 ~~a~~ H1 6.20 6.60 ~~Ge~~ J1 2.40 2.72 ~~Ge~~ L 13 14 ~~a~~ L1 3.50 3.93 ~~a~~ L20 16.40 ~~a~~ L30 28.90 ~~a Ge~~ ∅ P 3.75 3.85 Q 2.65 2.95 ~~Ge~~ 

DocID023468 Rev 3 

15/23 

**STB15N80K5, STF15N80K5, STP15N80K5, STW15N80K5** 

**Package mechanical data** 

## **4.3 STF15N80K5, TO-220FP** 

**==> picture [138 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 28. TO-220FP drawing<br>**----- End of picture text -----**<br>


**==> picture [53 x 6] intentionally omitted <==**

**----- Start of picture text -----**<br>
7012510_Rev_K_B<br>**----- End of picture text -----**<br>


16/23 

DocID023468 Rev 3 

**STB15N80K5, STF15N80K5, STP15N80K5, STW15N80K5** 

**Package mechanical data** 

**Table 11. TO-220FP mechanical data** 

||**Table 11. TO-220FP mechanical data**|**Table 11. TO-220FP mechanical data**|**Table 11. TO-220FP mechanical data**|
|---|---|---|---|
|**Dim.**<br>~~a~~|**mm**<br>~~ee ee~~|||
||**Min.**<br>~~es~~|**Typ.**<br>~~es~~<br>~~ee ee~~|**Max.**<br>~~es~~<br>~~ee~~|
|A<br>~~a~~|4.4|~~ee ee~~|4.6<br>~~ee~~|
|B<br>~~a~~|2.5||2.7|
|D<br>~~a~~|2.5||2.75|
|E<br>~~a~~|0.45<br>||0.7<br>|
|F<br>~~Ge~~|0.75<br>~~Ge~~|~~Ge~~|1<br>~~Ge~~|
|F1<br>~~Ge~~|1.15<br>~~Ge~~|~~Ge~~|1.70<br>~~Ge~~|
|F2<br>~~a~~|1.15||1.70|
|G<br>~~a~~|4.95||5.2|
|G1<br>~~a~~|2.4||2.7|
|H<br>~~a~~|10<br>||10.4<br>|
|L2<br>~~Ge~~|~~Ge~~|16<br>~~Ge~~|~~Ge~~|
|L3<br>~~Ge~~|28.6<br>~~Ge~~|~~Ge~~|30.6<br>~~Ge~~|
|L4<br>~~a~~|9.8||10.6|
|L5<br>~~a~~|2.9||3.6|
|L6<br>~~a~~|15.9||16.4|
|L7<br>~~a~~|9||9.3|
|Dia<br>~~a~~|3||3.2|



DocID023468 Rev 3 

17/23 

**STB15N80K5, STF15N80K5, STP15N80K5, STW15N80K5** 

**Package mechanical data** 

## **4.4 STW15N80K5, TO-247** 

## **Figure 29. TO-247 drawing** 

**==> picture [32 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
0075325_H<br>**----- End of picture text -----**<br>


18/23 

DocID023468 Rev 3 

**STB15N80K5, STF15N80K5, STP15N80K5, STW15N80K5** 

**Package mechanical data** 

**Table 12. TO-247 mechanical data** 

||**Table 12. TO-247 mechanical data**|**Table 12. TO-247 mechanical data**|**Table 12. TO-247 mechanical data**|
|---|---|---|---|
|**Dim.**<br>~~a~~|**mm.**<br>~~a~~<br>~~ee~~|||
||**Min.**<br>~~a~~|**Typ.**<br>~~a~~<br>~~ee~~|**Max.**<br>~~a~~|
|A<br>~~a~~|4.85|~~ee~~|5.15|
|A1<br>~~a~~|2.20||2.60|
|b<br>~~a~~|1.0||1.40|
|b1<br>~~a~~|2.0||2.40|
|b2<br>~~a~~|3.0||3.40|
|c<br>~~a~~<br>~~es~~|0.40||0.80|
|D<br>~~es~~|19.85||20.15|
|E<br>~~es~~<br>~~a~~|15.45||15.75|
|e<br>~~a~~|5.30|5.45|5.60|
|L<br>~~a~~|14.20||14.80|
|L1<br>~~a~~|3.70||4.30|
|L2<br>~~a~~<br>~~es~~||18.50||
|∅P<br>~~es~~|3.55||3.65|
|∅R<br>~~es~~<br>~~a~~|4.50||5.50|
|S<br>~~a~~|5.30|5.50|5.70|



DocID023468 Rev 3 

19/23 

**STB15N80K5, STF15N80K5, STP15N80K5, STW15N80K5** 

**Packaging information** 

## **5 Packaging information** 

## **Figure 30. Tape** 

**==> picture [353 x 317] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 pitches cumulative<br>tolerance on tape +/- 0.2 mm<br>Top cover P0 D P2<br>T tape<br>o i e —4 ”<br>E<br>C0O 0G8 O000 0 00<br>F<br>K0 W<br>B0<br>H ) P IGGY<br>Ld<br>A0 P1 D1<br>><br>User direction of feed<br>R<br>aca f ac i al i cal i aal :<br>BGs<br>es es Se en ns Sn Sen 5<br>——_—_p»> Bending radius<br>User direction of feed<br>AM08852v2<br>**----- End of picture text -----**<br>


20/23 

DocID023468 Rev 3 

**STB15N80K5, STF15N80K5, STP15N80K5, STW15N80K5** 

**Packaging information** 

**==> picture [366 x 246] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 31. Reel<br>T<br>REEL DIMENSIONS<br>40mm min.<br>Access hole<br>A At sl ot location<br>B<br>D<br>QO<br>C<br>N<br>A<br>Full radius Tape slot  G measured at hub<br>in core for<br>| | tape start 25 mm min.<br>width<br>**----- End of picture text -----**<br>


AM08851v2 

**Table 13. D²PAK (TO-263) tape and reel mechanical data** 

|**Tape**<br>~~ee~~<br>~~ee~~|**Tape**<br>~~ee~~<br>~~ee~~|**Tape**<br>~~ee~~<br>~~ee~~|**Reel**<br>~~ee~~<br>ee~~ee~~|**Reel**<br>~~ee~~<br>ee~~ee~~|**Reel**<br>~~ee~~<br>ee~~ee~~|
|---|---|---|---|---|---|
|**Dim.**<br>~~a~~|**mm**<br>**Min.**<br>**Max.**<br>~~ee ~~<br>~~aes~~||**Dim.**<br> ee<br>~~es~~|**mm**<br>~~ee~~||
||**Min.**<br>~~ee~~<br>~~a~~|||**Min.**<br>~~ee~~|**Max.**<br>~~ee~~|
|A0<br>~~a~~|10.5<br>|10.7<br>~~es~~|A<br>~~es~~||330|
|B0<br>~~a~~|15.7|15.9|B|1.5||
|D<br>~~a~~|1.5|1.6|C|12.8|13.2|
|D1<br>~~a~~|1.59<br>~~ee~~|1.61<br>~~ee~~|D<br>~~ee~~|20.2<br>~~ee~~|~~ee~~|
|E<br>~~a~~|1.65|1.85|G|24.4|26.4|
|F<br>~~a~~|11.4|11.6|N|100||
|K0<br>~~a~~|4.8|5.0|T||30.4|
|P0<br>~~a~~|3.9|4.1||||
|P1<br>~~a~~|11.9|12.1|Base qty||1000|
|P2<br>~~a~~|1.9<br>|2.1<br><br>~~ee~~|Bulk qty||1000|
|R<br>~~ee~~|50<br>~~ee~~|0.35<br>24.3<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~pp~~||||
|T<br>~~ee~~|0.25<br>~~ee~~|||||
|W<br>~~pp~~|23.7<br>~~pp~~|||||



DocID023468 Rev 3 21/23 ~~Se~~ 

**STB15N80K5, STF15N80K5, STP15N80K5, STW15N80K5** 

**Revision history** 

## **6 Revision history** 

**Table 14. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|18-Jul-2012|1|First release.|
|31-Oct-2012|2|– Inserted: IAR, EASand dv/dt values in_Table 2_<br>– Inserted:_Table 5_,_6_and_7_typical values<br>– Inserted:_Section 2.1: Electrical characteristics (curves)_<br>– Minor text changes|
|31-Oct-2014|3|Updated title, description and features<br>Updated_Static drain-source on-resistance_<br>Minor text changes|



22/23 

DocID023468 Rev 3 

**STB15N80K5, STF15N80K5, STP15N80K5, STW15N80K5** 

## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2014 STMicroelectronics – All rights reserved 

DocID023468 Rev 3 

23/23 



## Links

- [View this product on Novapart](https://novapart.co/products/STB15N80K5/power-mosfet-n-channel-800-v-14-a-03-ohm-to-263)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/stb15n80k5/mosfet-n-ch-800v-14a-190w-to-263/dp/3129785)
---

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