# Dual MOSFET, Dual P Channel, 20 V, 1.5 A
**URL**: https://novapart.co/products/SSM6P39TU,LF(T/dual-mosfet-p-channel-20-v-15-a
**SKU**: SSM6P39TU,LF(T
**Manufacturer**: TOSHIBA
**Category**: Semiconductors - Discretes || FETs || Dual MOSFETs
**Price**: €0.0990
**Stock**: 1000+
**Lead Time**: 120 days (indicative)
## Specifications
| Parameter | Value |
|---|---|
| Svhc | To Be Advised |
| No. Of Pins | 6Pins |
| Channel Type | Dual P Channel |
| Product Range | U-MOSIII Series |
| Qualification | - |
| Transistor Case Style | SOT-363F |
| Operating Temperature Max | 150°C |
| Power Dissipation N Channel | - |
| Power Dissipation P Channel | 500mW |
| Drain Source Voltage Vds N Channel | - |
| Drain Source Voltage Vds P Channel | 20V |
| Continuous Drain Current Id N Channel | - |
| Continuous Drain Current Id P Channel | 1.5A |
| Drain Source On State Resistance N Channel | - |
| Drain Source On State Resistance P Channel | 0.213ohm |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:4381053RL/)
SSM6P39TU
TOSHIBA Field-Effect Transistor Silicon P Channel MOS Type
## **SSM6P39TU**
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Unit: mm
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- Power Management Switch Applications
|Power Manaement Switch Alications|Power Manaement Switch Alications|Power Manaement Switch Alications|Power Manaement Switch Alications|Power Manaement Switch Alications|||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|g pp
High-Speed Switching Applications
1.8 V drive
P-ch 2-in-1
Low ON-resistance:
Ron= 430mΩ (max) (@VGS= –1.8 V)
Ron= 294mΩ (max) (@VGS= –2.5 V)
Ron= 213mΩ (max) (@VGS= –4.0 V)
**bsolute Maximum Ratings (Ta = 25 °C) (Q1,Q2 Common)**
**ote)**
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
-20
V
Gate-source voltage
VGSS
±8
V
DC
ID
-1.5
Drain current
Pulse
IDP
-3
A
Drain power dissipation
PD(Note 1)
500
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C|||||1.3±0.1
2.0±0.1
0.7±0.05
UF6||||||||||
||||||||||||||||
||||||||||||||||
||||||||1.3±0.1||||||||
||||||||||||||||
|||||||||||0.65
0.65|||||
||||||||||||||||
||||||||||||||||
||||||||||||||||
||||||||||||||||
|Characteristic||Symbol|Rating|Unit|||||||||||
|Drain-source voltage||VDSS|-20|V|||||||||||
|Gate-source voltage||VGSS|±8|V|||||||||||
|Drain current|DC|ID|-1.5|A|JEDEC
―||||||||||
||Pulse|IDP|-3||JEITA
―||||||||||
|Drain power dissipation||PD(Note 1)|500|mW|TOSHIBA
2-2T1B||||||||||
|Channel temperature||Tch|150|°C|||||||||||
||||||Weight: 7.0mg (typ.)||||||||||
|Storage temperature range||Tstg|−55 to 150|°C|||||||||||
- High-Speed Switching Applications
- 1.8 V drive
- P-ch 2-in-1
- Low ON-resistance: Ron = 430mΩ (max) (@VGS = –1.8 V) Ron = 294mΩ (max) (@VGS = –2.5 V) Ron = 213mΩ (max) (@VGS = –4.0 V)
## **Absolute Maximum Ratings (Ta = 25 °C) (Q1,Q2 Common) (Note)**
- Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
- Note1: Mounted on an FR4 board. (total dissipation) (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad : 645 mm[2] )
Start of commercial production 2008-01
2014-03-01
1
SSM6P39TU
## **Electrical Characteristics (Ta = 25°C) (Q1,Q2 Common)**
|Characteristics|Characteristics|Symbol|Test Conditions|Min|Typ.|Max|Unit|
|---|---|---|---|---|---|---|---|
|Drain-source breakdown voltage||V(BR) DSS|ID =-1 mA, VGS =0 V|-20|⎯|⎯|V|
|||V(BR) DSX|ID =-1 mA, VGS = +8 V|-12|⎯|⎯||
|Drain cutoff current||IDSS|VDS =-20 V, VGS =0 V|⎯|⎯|-10|μA|
|Gate leakage current||IGSS|VGS = ±8 V, VDS =0 V|⎯|⎯|±1|μA|
|Gate threshold voltage||Vth|VDS =-3 V, ID =-1 mA|-0.3|⎯|-1.0|V|
|Forward transfer admittance||⏐Yfs⏐|VDS =-3 V, ID =-1 A
(Note 2)|1.6|3.2|⎯|S|
|Drain-source ON-resistance||RDS (ON)|ID =-1.0 A, VGS =-4 V
(Note 2)|⎯|160|213|mΩ|
||||ID =-0.8 A, VGS =-2.5 V
(Note 2)|⎯|210|294||
||||ID =-0.1 A, VGS =-1.8 V
(Note 2)|⎯|280|430||
|Input capacitance||Ciss|VDS =-10 V, VGS =0 V, f=1 MHz|⎯|250|⎯|pF|
|Output capacitance||Coss||⎯|43|⎯||
|Reverse transfer capacitance||Crss||⎯|35|⎯||
|Total Gate Charge||Qg|VDS= -10 V, ID= -1.5 A, VGS= -4 V|⎯|6.4|⎯|nC|
|Gate−Source Charge||Qgs||⎯|4.5|⎯||
|Gate−Drain Charge||Qgd||⎯|1.9|⎯||
|Switching time|Turn-on time|ton|VDD =-10 V, ID =-1 A,
VGS =0 to -2.5 V, RG=4.7Ω|⎯|12|⎯|ns|
||Turn-off time|toff||⎯|11.2|⎯||
|Drain-source forward voltage||VDSF|ID =1.5 A, VGS =0 V (Note 2)|⎯|0.88|1.2|V|
Note 2: Pulse test
2014-03-01
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SSM6P39TU
## **Switching Time Test Circuit**
## **(a) Test Circuit (b) VIN**
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0 V
10%
OUT
0
IN 90%
−2.5 V
−2.5V
RL VDS (ON)
90%
10 μs VDD (c) VOUT
VDD =− 10 V 10%
RG = 4.7 Ω VDD tr tf
Duty ≤ 1%
VIN: tr, tf < 5 ns ton toff
Common Source
Ta = 25°C
G
R
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## **Marking Equivalent Circuit (top view)**
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6 5 4 6 5 4
PP1 Q1 Q2
1 2 3 1 2 3
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## **Notice on Usage**
Vth can be expressed as the voltage between gate and source when the low operating current value is ID = -1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).)
Take this into consideration when using the device.
## **Handling Precaution**
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials.
2014-03-01
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SSM6P39TU
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ID – VDS
-3
-8.0 V -4.0 V -2.5 V
-2 LPL i IAAYAYM LLL\Y~ |
-1.8 V
-1.5 V
-1 AA
VGS =- 1.2 V
Common Source
0 Eo Ta = 25 °C
0 -0.2 -0.4 -0.6 -0.8 -1.0
Drain-source voltage VDS (V)
(A)
D
Drain current I
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**----- Start of picture text -----**
ID – VGS
-10
Common Source
VDS = -3 V
-1
oe
Megena74eeesaeeees s asse
Ta = 100 °C
-0.1
-0.01 Sees) Seeeeeeeee 25 °C
− 25 °C
-0.001
-0.0001 Spiiiseanenenees
0 -1.0 -2.0 -3.0
Gate-source voltage VGS (V)
(A)
D
Drain current I
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RDS (ON) – VGS RDS (ON) – ID
1000 1000
TOLLE ID =−1.0A Common Source FET
Common Source Ta = 25°C
800 PCCPPEE $$| 800 SR|
600 PTT TTT TELL ELL 600 PF | | | fe
PCO a
400 COREE 400 Te Ao
25 °C
-1.8 V
CONE CO a r
-2.5 V
200 Ta = 100 °C 200
CNS — ————
Za... __2___-—— - VGS = -4.0 V + | }
− 25 °C
0 PORE E E 0 Po) tooo
0 -2.0 -4.0 -6.0 -8.0 0 -1 -2 -3
Gate-source voltage VGS (V) Drain current ID (A)
RDS (ON) – Ta Vth – Ta
1000 -1.0
Common Source Common Source
TOUT ET TT Ted VDS = -3.0 V
800 aOeee —SS| | | ID = -1 mA
600 Oe a
-0.5
400 Sot -0.8 A / -2.5 V ID = −0.1 A / VGS = -1.8 V EES
200 Tae -1.0 A / -4.0 V a
0 Fetto t Tot 0 piea eee tt
−50 0 50 100 150 −50 0 50 100 150
Ambient temperature Ta (°C) Ambient temperature Ta (°C)
(mΩ)
(mΩ)
DS (ON)
R DS (ON)
R
Drain-source ON-resistance
Drain-source ON-resistance
(V)
th
(mΩ)
DS (ON)
R
Drain-source ON-resistance
Gate threshold voltage V
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2014-03-01
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SSM6P39TU
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**----- Start of picture text -----**
|Yfs| – ID IDR – VDS
10 10
Common Source
Common Source VGS = 0 V
V DS = -3.0 V D
Ta = 25°C
3 Se 1 G , IDR Ea
PT ei oJ 5 /======
Liye
S
25 °C
1 SA CUT 0.1 Saeea/ Ta =100 °C si inowaaeyt tT Tt
PT TA I I L_L__eL_
0.3 i oo 0.01 PTA
PAM TAI ETA SS −25 °C
0.1 CIN UAE EU 0.001 ERATE
-0.01 -0.1 -1 -10 0 0.5 1.0 EEE EA 1.5
Drain current ID (A) Drain-source voltage VDS (V)
C – VDS t – ID
1000 1000
Common Source
500 VDD = -10 V
300 Ciss Ta VGS = 25 °C = 0 ∼ -2.5 V
ee toff cist
RG = 4.7 Ω
100 100
tf
50
Coss
30 Crss
SSS ott man SE
10 10 t on
ee Nell
5 Common Source tr
3 Ta = 25°C
f = 1 MHz a ell ee eeel
VGS = 0 V
1 LN 1 PTI TTF
-0.1 -1 -10 -100 -0.01 -0.1 -1 -10
Drain-source voltage VDS (V) Drain current ID (A)
Dynamic Input Characteristic
-10
Common Source TTT
ID = -1.5 A
-8 Ta = 25°C |Ty| |
I
-6
Pt tt Tye tt
PET VDD = -10 V TA VDD = -16 V
-4 an ay 4 / ee e
-2
PTY
yt tt tt
0
0 Vit ttt 10 ey 20
(S)
⎪
fs
Y (A)
⎪ DR
Drain reverse current I
Forward transfer admittance
Capacitance C (pF) Switching time t (ns)
(V)
GS
Gate-Source voltage V
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Total Gate Charge Qg (nC)
2014-03-01
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SSM6P39TU
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**----- Start of picture text -----**
rth – tw
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**----- Start of picture text -----**
1000
Single pulse
Mounted on FR4 board
2
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm )
i
100 B00
TT TT
a a a a
10
FCP CCMA CTT
1 LTV UTNE TWIN TWIN LTT LTT
0.001 0.01 0.1 1 10 100 1000
Pulse width tw (s)
Transient thermal impedance Rth (°C/W)
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PD – Ta
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**----- Start of picture text -----**
1000
Mounted on FR4 board
(25.4mm × 25.4mm × 1.6t , Cu Pad : 645 mm [2] )
t=10s
800 ‘
H EN
600
DC IN
400 TTTTTNTNETTTIN
200 HUTT TT NN
0 PLL EL EL EEL LL LLL LEN
-40 -20 0 20 40 60 80 100 120 140 160
*:Total Rating Ambient temperature Ta (°C)
(mW)
*
D
Drain power dissipation P
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2014-03-01
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SSM6P39TU
## **RESTRICTIONS ON PRODUCT USE**
- Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice.
- This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
- Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. **TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS.**
- **PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT (** " **UNINTENDED USE** " **).** Except for specific applications as expressly stated in this document, Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. **IF YOU USE PRODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT.** For details, please contact your TOSHIBA sales representative.
- Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
- Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations.
- The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
- **ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.**
- Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
- Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. **TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.**
2014-03-01
7
## Links
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- [Supplier page](https://es.farnell.com/toshiba/ssm6p39tu-lf-t/mosfet-dual-p-ch-20v-1-5a-sot/dp/4381053RL)
---
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