# Dual MOSFET, N and P Channel, 20 V, 20 V, 1.6 A, 1.6 A, 0.087 ohm
**URL**: https://novapart.co/products/SSM6L39TU,LF(T/dual-mosfet-n-and-p-channel-20-v-16-a-0087-ohm
**SKU**: SSM6L39TU,LF(T
**Manufacturer**: TOSHIBA
**Category**: Semiconductors - Discretes || FETs || Dual MOSFETs
**Price**: €0.1160
**Stock**: 1000+
**Lead Time**: 120 days (indicative)
## Specifications
| Parameter | Value |
|---|---|
| Svhc | To Be Advised |
| No. Of Pins | 6Pins |
| Channel Type | N and P Channel |
| Product Range | - |
| Qualification | - |
| Transistor Case Style | SOT-363F |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 1.6A |
| Power Dissipation N Channel | 500mW |
| Power Dissipation P Channel | 500mW |
| Drain Source Voltage Vds N Channel | 20V |
| Drain Source Voltage Vds P Channel | 20V |
| Continuous Drain Current Id N Channel | 1.6A |
| Continuous Drain Current Id P Channel | 1.6A |
| Drain Source On State Resistance N Channel | 0.087ohm |
| Drain Source On State Resistance P Channel | 0.087ohm |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:3872302RL/)
SSM6L39TU
TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type
## **SSM6L39TU**
## ○ Power Management Switch Applications
## ○ High-Speed Switching Applications
- N-ch: 1.5-V drive P-ch: 1.8-V drive
- N-ch, P-ch, 2-in-1
• Low ON-resistance Q1 N-ch: Ron = 247 mΩ (max) (@VGS = 1.5 V) Ron = 190 mΩ (max) (@VGS = 1.8 V) Ron = 139 mΩ (max) (@VGS = 2.5 V) Q2 P-ch: Ron = 430 mΩ (max) (@VGS = −1.8 V) Ron = 294 mΩ (max) (@VGS = −2.5 V)
## **Q1 Absolute Maximum Ratings (Ta** = **25°C)**
|**1 Absolute Maximum Ratin**|**1 Absolute Maximum Ratin**|**gs (Ta**=**25**|**°C)**||
|---|---|---|---|---|
|Characteristics||Symbol|Rating|Unit|
|Drain-source voltage||VDSS|20|V|
|Gate-source voltage||VGSS|±10|V|
|Drain current|DC|ID|1.6|A|
||Pulse|IDP|3.2||
## **Q2 Absolute Maximum Ratings (Ta** = **25°C)**
|**2 Absolute Maximum Ratin**|**2 Absolute Maximum Ratin**|**gs (Ta**=**25**|**°C)**||
|---|---|---|---|---|
|Characteristics||Symbol|Rating|Unit|
|Drain-source voltage||VDSS|−20|V|
|Gate-source voltage||VGSS|±8|V|
|Drain current|DC|ID|−1.5|A|
||Pulse|IDP|−3||
Unit: mm
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2.1±0.1
1.7±0.1
1 6
2 5
3 4
1.Source1 4.Source2
2.Gate1 5.Gate2
3.Drain2 6.Drain1
UF6
JEDEC ―
JEITA ―
TOSHIBA 2-2T1B
0.65
+0.1
2.0±0.1 1.3±0.1 0.3-0.05
0.65
0.7±0.05 0.166±0.05
**----- End of picture text -----**
Weight: 7.0 mg (typ.)
## **Absolute Maximum Ratings (Ta = 25 °C) (Q1, Q2 Common)**
|Characteristics|Symbol|Rating|Unit|
|---|---|---|---|
|Drain power dissipation|PD(Note 1)|500|mW|
|Channel temperature|Tch|150|°C|
|Storage temperature range|Tstg|−55 to 150|°C|
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
- significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note1: Mounted on an FR4 board. (total dissipation) (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad : 645 mm[2] )
## **Marking**
## **Equivalent Circuit (top view)**
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6 5 4 6 5 4
Q1 Q2
LL1
1 2 3 1 2 3
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Start of commercial production 2008-01
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SSM6L39TU
## **Q1 Electrical Characteristics (Ta** = **25°C)**
|Characteristics|Characteristics|Symbol|Test Conditions|Min|Typ.|Max|Unit|
|---|---|---|---|---|---|---|---|
|Drain-source breakdown voltage||V(BR) DSS|ID =1 mA, VGS =0 V|20|⎯|⎯|V|
|||V(BR) DSX|ID =1 mA, VGS =-10 V|12|⎯|⎯||
|Drain cutoff current||IDSS|VDS =20 V, VGS =0 V|⎯|⎯|1|μA|
|Gate leakage current||IGSS|VGS = ±10 V, VDS =0 V|⎯|⎯|±1|μA|
|Gate threshold voltage||Vth|VDS =3 V, ID =1 mA|0.35|⎯|1.0|V|
|Forward transfer admittance|||Yfs||VDS =3 V, ID =1A (Note 2)|2.5|5.0|⎯|S|
|Drain-source ON-resistance||RDS (ON)|ID =1 A, VGS =4.0 V (Note 2)|⎯|87|119|mΩ|
||||ID =1 A, VGS =2.5 V (Note 2)|⎯|105|139||
||||ID =0.8 A, VGS =1.8 V (Note 2)|⎯|125|190||
||||ID =0.3 A, VGS =1.5 V (Note 2)|⎯|145|247||
|Input capacitance||Ciss|VDS =10 V, VGS =0 V, f=1 MHz|⎯|260|⎯|pF|
|Output capacitance||Coss||⎯|45|⎯||
|Reverse transfer capacitance||Crss||⎯|37|⎯||
|Total Gate Charge||Qg|VDS= 10 V, ID= 1.6 A, VGS= 4 V|⎯|7.5|⎯|nC|
|Gate−Source Charge||Qgs||⎯|5.6|⎯||
|Gate−Drain Charge||Qgd||⎯|1.9|⎯||
|Switching time|Turn-on time|ton|VDD =10 V, ID =0.5 A
VGS =0 to 2.5 V, RG =4.7Ω|⎯|8.3|⎯|ns|
||Turn-off time|toff||⎯|11.5|⎯||
|Drain-source forward voltage||VDSF|ID =-1.6 A, VGS =0 V (Note 2)|⎯|-0.8|-1.2|V|
## **Q2 Electrical Characteristics (Ta** = **25°C)**
|Characteristics|Characteristics|Symbol|Test Conditions|Min|Typ.|Max|Unit|
|---|---|---|---|---|---|---|---|
|Drain-source breakdown voltage||V(BR) DSS|ID =-1 mA, VGS =0 V|-20|⎯|⎯|V|
|||V(BR) DSX|ID =-1 mA, VGS = +8 V|-12|⎯|⎯||
|Drain cutoff current||IDSS|VDS =-20 V, VGS =0 V|⎯|⎯|-10|μA|
|Gate leakage current||IGSS|VGS = ±8 V, VDS =0 V|⎯|⎯|±1|μA|
|Gate threshold voltage||Vth|VDS =-3 V, ID =-1 mA|-0.3|⎯|-1.0|V|
|Forward transfer admittance||⏐Yfs⏐|VDS =-3 V, ID =-1 A
(Note 2)|1.6|3.2|⎯|S|
|Drain-source ON-resistance||RDS (ON)|ID =-1.0 A, VGS =-4 V
(Note 2)|⎯|160|213|mΩ|
||||ID =-0.8 A, VGS =-2.5 V
(Note 2)|⎯|210|294||
||||ID =-0.1 A, VGS =-1.8 V
(Note 2)|⎯|280|430||
|Input capacitance||Ciss|VDS =-10 V, VGS =0 V, f=1 MHz|⎯|250|⎯|pF|
|Output capacitance||Coss||⎯|43|⎯||
|Reverse transfer capacitance||Crss||⎯|35|⎯||
|Total Gate Charge||Qg|VDS= -10 V, ID= -1.5 A, VGS= -4 V|⎯|6.4|⎯|nC|
|Gate−Source Charge||Qgs||⎯|4.5|⎯||
|Gate−Drain Charge||Qgd||⎯|1.9|⎯||
|Switching time|Turn-on time|ton|VDD =-10 V, ID =-1 A,
VGS =0 to -2.5 V, RG=4.7Ω|⎯|12|⎯|ns|
||Turn-off time|toff||⎯|11.2|⎯||
|Drain-source forward voltage||VDSF|ID =1.5 A, VGS =0 V
(Note 2)|⎯|0.88|1.2|V|
Note 2: Pulse test
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SSM6L39TU
## **Q1 Switching Time Test Circuit**
## **(a) Test Circuit**
## **(b) VIN**
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OUT
2.5 V
IN
0
10 μs VDD (c) VOUT
VDD = 10 V
RG = 4.7 Ω
Duty ≤ 1%
VIN: tr, tf < 5 ns
Common Source
Ta = 25°C
G
R
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**----- Start of picture text -----**
2.5 V
90%
10%
0 V
VDD
10%
90%
VDS (ON)
tr tf
ton toff
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## **Q2 Switching Time Test Circuit**
## **(a) Test Circuit**
## **(b) VIN**
**==> picture [242 x 138] intentionally omitted <==**
**----- Start of picture text -----**
OUT
0
IN
−2.5V
RL
10 μs VDD (c) VOUT
VDD =− 10 V
RG = 4.7 Ω
Duty ≤ 1%
VIN: tr, tf < 5 ns
Common Source
Ta = 25°C
G
R
**----- End of picture text -----**
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**----- Start of picture text -----**
0 V
10%
90%
−2.5 V
VDS (ON)
90%
10%
VDD
tr tf
ton toff
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## **Q1 Usage Considerations**
Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (1 mA for the Q1 of the SSM6L359TU). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on).
Take this into consideration when using the device.
## **Q2 Usage Considerations**
Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (−1 mA for the Q2 of the SSM6L39TU). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on). Take this into consideration when using the device.
## **Handling Precaution**
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials.
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SSM6L39TU
## **Q1 (N-ch MOSFET)**
**==> picture [190 x 181] intentionally omitted <==**
**----- Start of picture text -----**
ID – VDS
4
Common Source
Ta = 25 °C = 25 °C 25 °C
4.0 V 2.5 V
1.8 V
3
P| IA ALT I 1.5 V
2
VGS = 1.2 V
WAL I
1 LWA LTT LL$
0 Miri i i tli le
0 0.2 0.4 0.6 0.8 1.0
Drain-source voltage VDS (V) DS (V) (V)
(A)
D
Drain current I
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**==> picture [442 x 625] intentionally omitted <==**
**----- Start of picture text -----**
ID – VGS
4 10
Common Source Common Source
4.0 V 2.5 V Ta = 25 °C = 25 °C 25 °C VDS = 3 V
1.8 V
1
3
P| IA ALT I 1.5 V ————
0.1
2 Ta = 100 °C
VGS = 1.2 V 0.01
WAL I fp
1 LWA LTT LL$ SSSSSS 25 °C
0.001
− 25 °C
0 Miri i i tli le 0.0001 SAES
0 0.2 0.4 0.6 0.8 1.0 0 1.0 2.0
Drain-source voltage VDS (V) DS (V) (V) Gate-source voltage VGS (V)
RDS (ON) – VGS RDS (ON) – ID
400 400
ID =1.0A Common Source
Common Source Ta = 25°C
titi tT | i eee
300 300 1.5 V
SEEECEEE SR C
200 200
PME LE LE Et | | | es
25 °C 1.8 V
Ta = 100 °C 2.5 V
100 HIKEES Ee 100 S S
ENS
VGS = 4.0V
po) Se ee = =
− 25 °C
0 PT AFtT E EEL R 0 P | ft t| | H tf
0 5 10 0 1 2 3 4
Gate-source voltage VGS (V) Drain current ID (A)
RDS (ON) – Ta Vth – Ta
400 1.0
Common Source Common Source
VDS = 3 V
ID = 1 mA
ee EH
300
| ID = 0.3 A / VGS = 1.5 V
200 aa ID = 0.8 A / VGS = 1.8 V J 0.5 AHFASSEE
Ss
100 T he 1.0 A / 4 V y | AS
= oe a iPp
0 Pt tt. ID = 1.0 A / VGS = 2.5 V 0 Pt tT tLLL
−50 0 50 100 150 −50 0 50 100 150
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
(A)
D (A)
Drain current I D
Drain current I
(mΩ)
(mΩ)
DS (ON)
R DS (ON)
R
Drain-source ON-resistance
Drain-source ON-resistance
(V)
th
(mΩ)
DS (ON)
R
Drain-source ON-resistance
Gate threshold voltage V
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SSM6L39TU
## **Q1 (N-ch MOSFET)**
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IDR – VDS
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**==> picture [439 x 415] intentionally omitted <==**
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|Yfs| – ID
10 10
Common Source
VDS = 3 V
Ta = 25 ° C
3 eel nD 1 rrttrerterelT yyy yyy
mrt HHH SeRGG002/400008
25 °C
1 a) Aam 0.1 S SaSaaciiaeaacaete;ete; esanmnnnn Ta =100 °C°CC esanmnnnn Common SourceVGS = 0 V VGS = 0 V = 0 V 0 V
D
0.3 0.01
oy A ttt G , IDRDR
7 TT pf ff |
−25 °C 25 °C °C C
S
0.1 LEHI EIN ELI 0.001 F EEEEGHECCCCCC 4
0.01 0.1 1 10 0 –0.5 –1.0 –1.5
Drain-source voltage VDS (V) DS (V) (V)
Drain current ID (A)
C – VDS t – ID
1000 1000
Common Source
500 VDD = 10 V
VGS = 0 to 2.5 V
300
C iss t off Ta = 25 °C
RG = 4.7 Ω
eel 100 cence
100 tf
Pre CTE Lol N01
50
30 TS C oss JINN
a C rss
ee el | oT TL TNINAE TET
10 10 ton
POS ce RE Sel
5 Common Source
3 Ta = 25°C
f = 1 MHz tr
VGS = 0 V
1 eea Se:ll 1 Sania annnilimmnaiii
0.1 1 10 100 0.01 0.1 1 10
Drain-source voltage VDS (V) Drain current ID (A)
(S)
⎪
Yfs (A)
⎪ DR
Forward transfer admittance Drain reverse current I
Switching time t (ns)
Capacitance C (pF)
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**==> picture [201 x 180] intentionally omitted <==**
**----- Start of picture text -----**
10
1 rrttrerterelT yyy yyy
SeRGG002/400008
25 °C
0.1
S SaSaaciiaeaacaete;ete; esanmnnnn
Ta =100 °C°CC
Common SourceVGS = 0 V VGS = 0 V = 0 V 0 V
D
0.01
ttt G , IDRDR
pf ff |
−25 °C 25 °C °C C
S
0.001 F EEEEGHECCCCCC 4
0 –0.5 –1.0 –1.5
Drain-source voltage VDS (V) DS (V) (V)
(A)
DR
Drain reverse current I
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**==> picture [203 x 167] intentionally omitted <==**
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Dynamic Input Characteristic
10
Common Source
ID = 1.6A ttt tly |
8 Ta = 25°C Tt| A
eeeee ae
6 PTTtlt LTA]
PTT
VDD = 10 V VDD = 16 V
4 P[. EL ym yy
PT I[_ATTfF {ll
2 | | Tl
YA | | | |
eet
0
Vit tt| tT t | tl
0 10 20
(V)
GS
Gate-Source voltage V
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Total Gate Charge Qg (nC)
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SSM6L39TU
## **Q2 (P-ch MOSFET)**
**==> picture [447 x 661] intentionally omitted <==**
**----- Start of picture text -----**
ID – VDS ID – VGS
-3 -10
-8.0 V -4.0 V -2.5 V Common Source
VDSDS = -3 V 3 V
-2 aPL IAA w YL ean V4 -1 eeSSSSSS == S—— 72SES======= sssae—— 72SES======= sssae 72SES======= sssaeSES======= sssae======= sssae sssae
Ta = 100 °C= 100 °C 100 °C
-1.8 V -0.1
-1 aV/7eaeaee -1.5 V -0.01 Sao0//=eeeSeee 25 °C °C C
− 25 °C25 °C
-0.001
VGS =- 1.2 V
Common Source
0 Ao Ta = 25 °C -0.0001 SHE FEE - 4
0 -0.2 -0.4 -0.6 -0.8 -1.0 0 -1.0 -2.0 -3.0
Drain-source voltage VDS (V) Gate-source voltage VGS (V) GS (V) (V)
RDS (ON) – VGS RDS (ON) – ID
1000 1000
TOO ID =−1.0A Common Source TILL
Common Source Ta = 25°C
800 PEEPOO oe 800 Seee
600 PCOPCO 600 eeee
400 PCAN EEE 400 ee
25 °C
-1.8 V
COON > ae
-2.5 V
200 Ta = 100 °C 200
SREKNNSSEPAERES P|
a . [ VGS = -4.0 V +
− 25 °C
0 0
0 PCCPEEEE -2.0 -4.0 PPT -6.0 -8.0 0 Po -1 -2 -3
Gate-source voltage VGS (V) Drain current ID (A)
RDS (ON) – Ta Vth – Ta
1000 -1.0
Common Source Common Source
ee ee ee | VDS = -3.0 V
800 PEEPee |oS|tt ID = -1 mA
600 PEEP a
-0.5
400 -0.8 A / -2.5 V ID = −0.1 A / VGS = -1.8 V
peeyp ees } PSSSEE EE
200
e —T -1.0 A / -4.0 V f
0 PE Pert| | fe 0 FEE EEE
−50 0 50 100 150 −50 0 50 100 150
Ambient temperature Ta (°C) Ambient temperature Ta (°C)
(A)
D (A)
Drain current I D
Drain current I
(mΩ)
(mΩ)
DS (ON)
R DS (ON)
R
Drain-source ON-resistance
Drain-source ON-resistance
(V)
th
(mΩ)
DS (ON)
R
Drain-source ON-resistance
Gate threshold voltage V
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**==> picture [201 x 168] intentionally omitted <==**
**----- Start of picture text -----**
-10
Common Source
VDSDS = -3 V 3 V
-1
eeSSSSSS == S—— 72SES======= sssae—— 72SES======= sssae 72SES======= sssaeSES======= sssae======= sssae sssae
Ta = 100 °C= 100 °C 100 °C
-0.1
-0.01
25 °C °C C
Sao0//=eeeSeee
− 25 °C25 °C
-0.001
-0.0001 SHE FEE - 4
0 -1.0 -2.0 -3.0
Gate-source voltage VGS (V) GS (V) (V)
(A)
D
Drain current I
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SSM6L39TU
## **Q2 (P-ch MOSFET)**
**==> picture [448 x 420] intentionally omitted <==**
**----- Start of picture text -----**
|Yfs| – ID IDR – VDS
10 10
Common Source
Common Source VGS = 0 V
VDS = -3.0 V
D
Ta = 25°C
3 re TTT 1 G , IDR 4444.
EA Pct JShH pSAA ES SSS=
S
25 °C
1 MEN Za 0.1 ffDATA
Ta =100 °C
0.3 PACT 0.01 i | ft | |
7410) an A ;SRS{| | |SPSSFY Tt ye −25 °C Y | SS==| ft
0.1 CUTE LVF LUT 0.001 PCC Soeyf
-0.01 -0.1 -1 -10 0 0.5 1.0 1.5
Drain current ID (A) Drain-source voltage VDS (V)
C – VDS DS t – ID
1000 1000
Common Source
500 VDD = -10 V
300 Cississ Ta VGS = 25 = 0 to -2.5 V ° C
nS toff cist
RG = 4.7 Ω
100 100
tf
50
Coss
30 Crss
EH rr Hi eT AT
10 10 t on
5 Common Source tr
3 Ta = 25°C = 25°C 25°C °C C
f = 1 MHz = 1 MHz 1 MHz ell ee|
VGS = 0 V = 0 V 0 V
1 PE LUN ECU 1 a|
-0.1 -1 -10 -100 -0.01 -0.1 -1 -10
Drain-source voltage VDS (V) DS (V) (V) Drain current ID (A)
(S)
⎪
fs
Y (A)
⎪ DR
Drain reverse current I
Forward transfer admittance
Capacitance C (pF) Switching time t (ns)
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**==> picture [202 x 413] intentionally omitted <==**
**----- Start of picture text -----**
C – VDS DS
1000
500
300 Cississ
nS
100
50
Coss
30 Crss
EH rr Hi
10
5 Common Source
3 Ta = 25°C = 25°C 25°C °C C
f = 1 MHz = 1 MHz 1 MHz ell
VGS = 0 V = 0 V 0 V
1 PE LUN ECU
-0.1 -1 -10 -100
Drain-source voltage VDS (V) DS (V) (V)
Dynamic Input Characteristic
-10
Common Source
ID = -1.5 A P| | | Yl |
-8 Ta = 25°C TTY|
poo
-6
PT | lA
Pi tt}| | tTWi Ayt| tt| tlyt
VDD = -10 V VDD = -16 V
-4 i Ae
PT Iyt | | | tt
-2
Pi Yl | tt tt
rt | | | tT dt tt
0 0 Vitti 10 tt tt ft 20
Capacitance C (pF)
(V)
GS
Gate-Source voltage V
**----- End of picture text -----**
Total Gate Charge Qg (nC)
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SSM6L39TU
## **Q1,Q2 Common**
**==> picture [436 x 195] intentionally omitted <==**
**----- Start of picture text -----**
*
rth – tw PD – Ta
1000 1000
Single pulse Mounted on FR4 board
Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm , Cu Pad : 645 mm [2] )
2
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm )
Coo 800 t =10s ‘
100 B00 H N
600
TT TT DC IN
a a a a 400 TTTTTNTNETTTIN
10
FCP CCMA CTT 200 HUTT TT NN
1 LTV UTNE TWIN TWIN LTT LTT 0 PLL EL EL EEL LL LLL LEN
-40 -20 0 20 40 60 80 100 120 140 160
0.001 0.01 0.1 1 10 100 1000
Pulse width tw (s) *:Total Rating Ambient temperature Ta (°C)
(°C/W) (mW)
th *
D
Drain power dissipation P
Transient thermal impedance r
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SSM6L39TU
## **RESTRICTIONS ON PRODUCT USE**
- Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice.
- This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
- Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. **TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS.**
- **PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT (** " **UNINTENDED USE** " **).** Except for specific applications as expressly stated in this document, Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. **IF YOU USE PRODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT.** For details, please contact your TOSHIBA sales representative.
- Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
- Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations.
- The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
- **ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.**
- Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
- Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. **TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.**
2014-03-01
9
## Links
- [View this product on Novapart](https://novapart.co/products/SSM6L39TU,LF(T/dual-mosfet-n-and-p-channel-20-v-16-a-0087-ohm)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/toshiba/ssm6l39tu-lf-t/mosfet-dual-n-p-ch-20v-1-6a-sot363f/dp/3872302RL)
---
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