# Dual MOSFET, N and P Channel, 30 V, 20 V, 500 mA, 500 mA, 0.145 ohm

![Product image](https://novapart.co/image/farnell:4387194RL/)

**URL**: https://novapart.co/products/SSM6L12TU,LF(T/dual-mosfet-n-and-p-channel-30-v-20-500-ma-0145
**SKU**: SSM6L12TU,LF(T
**Manufacturer**: TOSHIBA
**Category**: Semiconductors - Discretes || FETs || Dual MOSFETs
**Price**: €0.1170
**Stock**: 1000+
**Lead Time**: 120 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | To Be Advised |
| No. Of Pins | 6Pins |
| Channel Type | N and P Channel |
| Product Range | - |
| Qualification | - |
| Transistor Case Style | SOT-363F |
| Operating Temperature Max | 150°C |
| Power Dissipation N Channel | 500mW |
| Power Dissipation P Channel | 500mW |
| Drain Source Voltage Vds N Channel | 30V |
| Drain Source Voltage Vds P Channel | 20V |
| Continuous Drain Current Id N Channel | 500mA |
| Continuous Drain Current Id P Channel | 500mA |
| Drain Source On State Resistance N Channel | 0.145ohm |
| Drain Source On State Resistance P Channel | 0.26ohm |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4387194RL/)

SSM6L12TU 

## TOSHIBA Field Effect Transistor  Silicon P/N Channel MOS Type 

## **SSM6L12TU** 

## High-Speed Switching Applications 

- Optimum for high-density mounting in small packages 

- Low ON-resistance Q1 : RDS(ON) = 180mΩ (max) (@VGS = 2.5 V) Q2 : RDS(ON) = 430mΩ (max) (@VGS = -2.5 V)DS(ON) = 430mΩ (max) (@VGS = -2.5 V) = 430mΩ (max) (@VGS = -2.5 V)GS = -2.5 V) = -2.5 V) 

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**----- Start of picture text -----**<br>
Unit: mm<br>Q2 :  RDS(ON) = 430mΩ (max) (@VGS = -2.5 V)DS(ON) = 430mΩ (max) (@VGS = -2.5 V) = 430mΩ (max) (@VGS = -2.5 V)GS = -2.5 V) = -2.5 V)<br>2.1±0.1<br>Q1 Absolute Maximum Ratings (Ta = 25°C) (Ta = 25°C) 1.7±0.1<br>Characteristics  Symbol  Rating  Unit<br>1 6<br>Drain-source voltage  VDS 30  V<br>Gate-source voltage  VGSS ± 12  V  2 5<br>DC  ID 0.5<br>Drain current  A  3 4<br>Pulse  IDP 1.5<br>Q2 Absolute Maximum Ratings (Ta = 25°C) (Ta = 25°C)<br>Characteristics  Symbol  Rating  Unit<br>Drain-source voltage  VDS -20  V<br>1.Source1  4.Source2<br>Gate-source voltage  VGSS ± 12  V<br>2.Gate1  5.Gate2<br>DC  ID -0.5  3.Drain2 6.Drain1<br>Drain current  A<br>Pulse  IDP -1.5  UF6<br>Absolute Maximum Ratings (Q1,Q2 Common)  (Q1,Q2 Common)  JEDEC  ―<br>(Ta = 25°C)<br>JEITA  ―<br>Characteristics  Symbol  Rating  Unit<br>TOSHIBA  2-2T1B<br>Power dissipation  PD  500  mW<br>(Note 1) Weight: 7.0 mg (typ.)<br>Channel temperature  Tch 150  °C<br>Storage temperature range  Tstg −55 to 150  °C<br>+0.1<br>0.65<br>0.3-0.05<br>2.0±0.1 1.3±0.1<br>0.65<br>+0.06 0.16-0.05<br>0.7±0.05<br>**----- End of picture text -----**<br>


## **Q1 Absolute Maximum Ratings (Ta = 25°C) (Ta = 25°C)** 

## **Q2 Absolute Maximum Ratings (Ta = 25°C) (Ta = 25°C)** 

**Absolute Maximum Ratings (Q1,Q2 Common)  (Q1,Q2 Common) (Ta = 25°C)** 

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. 

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 

Note 1: Mounted on FR4 board. (total dissipation) 

- (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm[2] ) 

## **Marking** 

## **Equivalent Circuit (top view)** 

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6  5  4  6 5 4<br>Q1<br>K9<br>Q2<br>1  2  3  1 2 3<br>**----- End of picture text -----**<br>


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## **Q1 Electrical Characteristics (Ta = 25°C)** 

|Characteristics|Characteristics|Symbol|Test Condition|Min|Typ.|Max|Unit|
|---|---|---|---|---|---|---|---|
|Gate leakage current||IGSS|VGS = ±12 V, VDS =0|⎯|⎯|±1|μA|
|Drain-source breakdown voltage||V(BR) DSS|ID =1 mA, VGS =0|30|⎯|⎯|V|
|||V(BR) DSX|ID =1 mA, VGS = −12 V|18|⎯|⎯||
|Drain cut-off current||IDSS|VDS =30 V, VGS =0|⎯|⎯|1|μA|
|Gate threshold voltage||Vth|VDS =3 V, ID =0.1 mA|0.5|⎯|1.1|V|
|Forward transfer admittance||⏐Yfs⏐|VDS =3 V, ID =0.25 A<br>(Note 2)|1.0|2.0|⎯|S|
|Drain-source on-resistance||RDS (ON)|ID =0.50 A, VGS =4.5 V<br>(Note 2)|⎯|120|145|mΩ|
||||ID =0.25 A, VGS =2.5 V<br>(Note 2)|⎯|140|180||
|Input capacitance||Ciss|VDS =10 V, VGS =0, f=1 MHz|⎯|245|⎯|pF|
|Reverse transfer capacitance||Crss|VDS =10 V, VGS =0, f=1 MHz|⎯|33|⎯|pF|
|Output capacitance||Coss|VDS =10 V, VGS =0, f=1 MHz|⎯|41|⎯|pF|
|Switching time|Turn-on time|ton|VDD =10 V, ID =0.25 A,<br>VGS =0 to 2.5 V, RG=4.7Ω|⎯|9|⎯|ns|
||Turn-off time|toff||⎯|15|⎯||



Note 2: Pulse test 

## **Switching Time Test Circuit** 

## **(a) Test Circuit (b) VIN** 

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OUT<br>2.5 V<br>IN<br>0<br>10 μs VDD (c) VOUT<br>VDD = 10 V<br>RG = 4.7 Ω<br>Duty ≤ 1%<br>VIN: tr, tf < 5 ns<br>Common Source<br>Ta = 25°C<br>G<br>R<br>**----- End of picture text -----**<br>


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2.5 V<br>90%<br>10%<br>0 V<br>VDD<br>90%<br>10%<br>VDS (ON)<br>tr tf<br>ton toff<br>**----- End of picture text -----**<br>


## **Precaution** 

Vth can be expressed as the voltage between gate and source when the low operating current value is ID=100 μA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. 

(The relationship can be established as follows: VGS (off) < Vth < VGS (on)) 

Please take this into consideration when using the device. 

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## **Q2 Electrical Characteristics (Ta = 25°C)** 

|Characteristics|Characteristics|Symbol|Test Condition|Min|Typ.|Max|Unit|
|---|---|---|---|---|---|---|---|
|Gate leakage current||IGSS|VGS = ±12V, VDS =0|⎯|⎯|±1|μA|
|Drain-source breakdown voltage||V(BR) DSS|ID =-1 mA, VGS =0|-20|⎯|⎯|V|
|||V(BR) DSX|ID =-1 mA, VGS = +12 V|-8|⎯|⎯||
|Drain cut-off current||IDSS|VDS =-20 V, VGS =0|⎯|⎯|-1|μA|
|Gate threshold voltage||Vth|VDS =-3 V, ID =-0.1 mA|-0.5|⎯|-1.1|V|
|Forward transfer admittance||⏐Yfs⏐|VDS =-3 V, ID =-0.25 A<br>(Note 3)|0.65|1.3|⎯|S|
|Drain-source on-resistance||RDS (ON)|ID =-0.25 A, VGS =-4 V<br>(Note 3)|⎯|210|260|mΩ|
||||ID =-0.25 A, VGS =-2.5 V<br>(Note 3)|⎯|310|430||
|Input capacitance||Ciss|VDS =-10 V, VGS =0, f=1 MHz|⎯|218|⎯|pF|
|Reverse transfer capacitance||Crss|VDS =-10 V, VGS =0, f=1 MHz|⎯|42|⎯|pF|
|Output capacitance||Coss|VDS =-10 V, VGS =0, f=1 MHz|⎯|52|⎯|pF|
|Switching time|Turn-on time|ton|VDD =-10 V, ID =-0.25 A,<br>VGS =0 to -2.5 V, RG=4.7Ω|⎯|16|⎯|ns|
||Turn-off time|toff||⎯|15|⎯||



Note3: Pulse test 

## **Switching Time Test Circuit** 

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(a) Test circuit  OUT (b) VIN 0 V 90%<br>0<br>IN<br>−2.5V  RL −2.5 V 10%<br>10 μs VDD (c) VOUT VDS (ON)<br>90%<br>VDD = -10 V<br>RG = 4.7 Ω<br>10%<br>Duty ≤ 1%  VDD<br>VIN: tr, tf < 5 ns  tr tf<br>Common Source<br>Ta = 25°C  ton toff<br>G<br>R<br>**----- End of picture text -----**<br>


## **Precaution** 

Vth can be expressed as the voltage between gate and source when the low operating current value is ID=-100 μA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. 

(The relationship can be established as follows: VGS (off) < Vth < VGS (on)) 

Please take this into consideration when using the device. 

## **Handling Precaution** 

When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 

Thermal resistance Rth (ch-a) and power dissipation PD vary depending on board material, board area, board thickness and pad area. When using this device, please take heat dissipation into consideration 

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## **Q1(Nch MOS FET)** 

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ID - VDS ID - VDS<br>1600 1600 1.8<br>1.8<br>1400 1400<br>1.6 1.6<br>1200 1200 2.0 2.0<br>3.0 3.0<br>1000 1000 5.0 5.0 4.0 4.0 VGS=1.4V VGS=1.4V<br>800 800<br>600 600<br>400 400 Common Source<br>200 200 Ta Pulse test Common SourceTa Common SourceTa = = = 25 25 25 ℃ ° ° C C<br>0 0<br>0 0 0.2 0.2 0.4 0.4 0.6 0.6 0.8 0.8 1 1<br>Drain-Source voltage  VDS (V) Drain-Source voltage  VDS (V)<br> ID (mA)<br>urrent<br>c<br>Drain  Drain urrent<br>**----- End of picture text -----**<br>


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RDS(ON) - ID<br>200<br>Common SourceCommon Source<br>180 Ta=25 ℃ ° C<br>160 Pulse test<br>140 2.5V<br>120<br>VGS=4.5V<br>100<br>80<br>60<br>40<br>20<br>0<br>0 200 400 600 800 1000 1200 1400 1600<br>Drain current  ID (mA)<br>RDS(ON) - Ta<br>400<br>Common Source Common Source<br>350<br>Pulse test<br>300<br>250<br>2.5V,250mA<br>200<br>150<br>100 VGS=4.5V,ID=500mA<br>50<br>0<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>Ambient temperature  Ta (°C)<br> RDS(ON) (mΩ)<br>Drain-Source on resistance<br> RDS(ON) (mΩ)<br>Drain-Source on resistance<br>**----- End of picture text -----**<br>


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ID - VGS<br>10000<br>1000<br>100<br>Ta=100°C<br>10<br>1 25°C<br>-25°C<br>Common Source<br>0.1<br>VDS=3V Common Source<br>Pulse test VDS=3V<br>0.01<br>0 1 2 3<br>Gate-Source voltage  VGS (V)<br>RDS(ON) - VGS<br>400<br>Common SourceCommon Source<br>350 ID=500mA<br>ID=500mA<br>300 Pulse test<br>250<br>200<br>25°C<br>Ta=100°C<br>150<br>100<br>-25°C<br>50<br>0<br>0 1 2 3 4 5 6 7 8 9 10<br>Gate-Source voltage  VGS (V)<br>Vth - Ta<br>1<br>Common Source<br>ID=0.1mA<br>0.8 VDS=3V<br>0.6<br>0.4<br>0.2<br>0<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>Ambient temperature  Ta (°C)<br>Drain current  ID (mA)<br> RDS(ON) (mΩ)<br>Drain-Source on resistance<br>Gate threshold voltage  Vth(V)<br>**----- End of picture text -----**<br>


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## **Q1(Nch MOS FET)** 

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|Yfs| - ID<br>10<br>25°C<br>-25°C<br>Ta=100°C<br>1<br>Common Source<br>Common Source<br>VDS=3V VDS=3V<br>Pulse test Ta=25°C<br>0<br>10 100 1000 10000<br>Drain current  ID (mA)<br>|Yfs| (S)<br>Forward transfer admittance<br>**----- End of picture text -----**<br>


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C - VDS<br>1000<br>Common Source<br>VGS=0V<br>f=1MHz<br>Ta=25°C<br>Ciss<br>100<br>Coss<br>Crss<br>10<br>0.1 1 10 100<br>Drain-Source voltage  VDS (V)<br>Capacitance  C (pF)<br>**----- End of picture text -----**<br>


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IDR - VDS<br>1600<br>Common SourceCommon Source<br>1400 VGS=0V V GS = 0 V<br>Ta=25°C Pulse test<br>1200 D<br>D<br>1000 G IDR<br>G IDR<br>800<br>S<br>S<br>600<br>400<br>200<br>0<br>0 -0.2 -0.4 -0.6 -0.8 -1<br>Drain-Source voltage  VDS (V)<br>Drain reverse current  IDR (mA)<br>**----- End of picture text -----**<br>


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t - ID<br>1000<br>Common SourceCommon Source<br>VDD=10V<br>VGS=0 to 2.5V  VGS=0~2.5V<br>Ta=25 Ta=25°C ℃<br>100<br>toff<br>tf<br>10<br>ton<br>tr<br>1<br>10 100 1000 10000<br>Drain current  ID (mA)<br>Switching time  t (ns)<br>**----- End of picture text -----**<br>


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## **Q2(Pch MOS FET)** 

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ID - VDS ID - VDS<br>-1600 -1600<br>-1400 -1400 -5.0 -5.0 -3.0 -3.0<br>-1200 -1200<br>- - 2.0<br>-1000 -1000<br>-4.0 -4.0<br>-800 -800<br>- 1.8 1.8<br>-600 -600<br>-400 -400 V GS=-1.6 GS=-1.6<br>-200 -200 Common Source Common Source Common Source<br>Ta=25Ta=25 Ta=25 ℃ ° C, Pulse test °C<br>0 0<br>0 0 -0.2 -0.2 - -0. 4 4 - -0 .6 .6 -0.8 -1<br>Drain-Source voltage  VDS (V) Drain-Source voltage  VDS (V)<br>RDS(ON) - ID<br>500<br>400<br>-2.5V<br>300<br>200<br>VGS=-4V<br>100 Common Source<br>Ta=25Common Source ℃<br>Pulse test Ta=25°C<br>0<br>0 -200 -400 -600 -800 -1000 -1200 -1400 -1600<br>Drain current  ID (mA)<br>RDS(ON) - Ta<br>500<br>Common Source Common Source<br>ID=-250mA ID=-250mA<br>400 -2.5V<br>Pulse test<br>300<br>VGS=-4V<br>200<br>100<br>0<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>Ambient temperature  Ta (°C)<br>Drain current  ID (mA) Drain current  ID (mA)<br> RDS(ON) (mΩ)<br>Drain-Source on resistance<br> RDS(ON) (mΩ)<br>Drain-Source on resistance<br>**----- End of picture text -----**<br>


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ID - VGS<br>-10000<br>-1000<br>-100<br>-10 Ta=100°C<br>-1 25 °<br>-25 ° C Common Source<br>- 0.1 Common Source<br>VDS=-3V<br>VDS=-3V<br>Pulse test<br>- 0.01<br>0 -1 -2 -3<br>Gate-Source voltage  VGS (V)<br>-<br>Drain current  ID (mA)<br>**----- End of picture text -----**<br>


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RDS(ON) - VGS<br>500<br>Common Source Common Source<br>ID=-250mA ID=-250mA<br>400<br>Pulse test<br>300<br>200<br>Ta=100°C<br>25°C<br>100<br>-25°C<br>0<br>0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10<br>Gate-Source voltage  VGS (V)<br>Vth - Ta<br>-1<br>-0.8<br>-0.6<br>-0.4<br>-0.2 Common Source<br>ID=-0.1mA<br>VDS=-3V<br>0<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>Ambient temperature  Ta (°C)<br> RDS(ON) (mΩ)<br>Drain-Source on resistance<br>Gate threshold voltage  Vth(V)<br>**----- End of picture text -----**<br>


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## **Q2(Pch MOS FET)** 

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|Yfs| - ID<br>10<br>25 ° C<br>-25°C<br>1<br>Ta=100°C<br>Common Source<br>VDS=-3V Common Source<br>Ta=25VDS=-3V ℃<br>Pulse test Ta=25°C<br>0<br>-10 -100 -1000 -10000<br>Drain current  ID (mA)<br>|Yfs| (S)<br>Forward transfer admittance<br>**----- End of picture text -----**<br>


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C - VDS<br>1000<br>Ciss<br>100<br>Common Source Coss Crss<br>VGS=0V<br>f=1MHz<br>Ta=25°C<br>10<br>-0 -1 -10 -100<br>Drain-Source voltage  VDS (V)<br>Capacitance  C (pF)<br>**----- End of picture text -----**<br>


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IDR - VDS<br>1600<br>Common SourceCommon Source<br>1400 VGS=0VVGS = 0 V<br>Ta=25°CPulse test D<br>1200<br>G IDR<br>1000<br>800<br>S<br>600<br>400<br>200<br>0<br>0.0 0.2 0.4 0.6 0.8 1.0<br>Drain-Source voltage  VDS (V)<br>Drain reverse current  IDR (mA)<br>**----- End of picture text -----**<br>


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t - ID<br>1000<br>Common SourceCommon Source<br>VDD=-10V VDD=-10V<br>VGS=0 to -2.5V  VGS=0~-2.5V<br>toff Ta=25 Ta=25°C ℃<br>100<br>tf<br>ton<br>10<br>tr<br>1<br>-10 -100 -1000 -10000<br>Drain current  ID (mA)<br>Switching time  t (ns)<br>**----- End of picture text -----**<br>


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PD* - Ta<br>1000<br>Mounted FR4 board mounted FR4 board<br>800 t=10s (25.4 mm × 25.4mm × 1.6 mm(25.4mm*25.4mm*1.6t )<br>Cu Pad :645mmCu Pad :645mm [2] [2] )<br>600<br>DC<br>400<br>200<br>0<br>0 20 40 60 80 100 120 140 160<br>*:Total Rating Ambient temperature Ta(℃)<br>Drain power dissipation PD* (mW)<br>**----- End of picture text -----**<br>


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rth – tw<br>1000<br>Single pulse<br>Mounted on FR4 board<br>2<br>(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm )<br>100<br>10<br>1 aa ee ll<br>0.001  0.01 0.1  1  10  100  1000<br>Pulse width  tw  (s)<br>  (°C/W )<br>th<br>Transient thermal impedance  r<br>**----- End of picture text -----**<br>


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## **RESTRICTIONS ON PRODUCT USE** 

- Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. 

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- **ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.** 

- Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. 

- Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 

2010-02-15 

9 



## Links

- [View this product on Novapart](https://novapart.co/products/SSM6L12TU,LF(T/dual-mosfet-n-and-p-channel-30-v-20-500-ma-0145)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/toshiba/ssm6l12tu-lf-t/mosfet-n-p-ch-30v-0-5a-sot-363f/dp/4387194RL)
---

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