# Power MOSFET, N Channel, 20 V, 180 mA, 3 ohm, SOT-723, Surface Mount
**URL**: https://novapart.co/products/SSM3K35MFV,L3XGF(T/power-mosfet-n-channel-20-v-180-ma-3-ohm-sot-723
**SKU**: SSM3K35MFV,L3XGF(T
**Manufacturer**: TOSHIBA
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.0290
**Stock**: 10+
**Lead Time**: 134 days (indicative)
## Specifications
| Parameter | Value |
|---|---|
| Svhc | To Be Advised |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 150mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4V |
| Transistor Case Style | SOT-723 |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 180mA |
| Drain Source On State Resistance | 3ohm |
| Gate Source Threshold Voltage Max | 1V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:4274857/)
SSM3K35MFV
## TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
## **SSM3K35MFV**
## ○ High-Speed Switching Applications
Unit: mm
- Analog Switch Applications
- 1.2 V drive
- Low ON-resistance : Ron = 20 Ω (max) (@VGS = 1.2 V) : Ron = 8 Ω (max) (@VGS = 1.5 V) : Ron = 4 Ω (max) (@VGS = 2.5 V) : Ron = 3 Ω (max) (@VGS = 4.0 V)
## **Absolute Maximum Ratings (Ta = 25˚C)**
|**Characteristic**|**Characteristic**|**Symbol**|**Rating**|**Unit**|
|---|---|---|---|---|
|Drain–source voltage||VDSS|20|V|
|Gate–source voltage||VGSS|±10|V|
|Drain current|DC|ID|180|mA|
||Pulse|IDP|360||
|Drain power dissipation||PD(Note 1)|150|mW|
|Channel temperature||Tch|150|°C|
|Storage temperature||Tstg|−55 to 150|°C|
Note 1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.585 mm[2] )
**==> picture [148 x 264] intentionally omitted <==**
**----- Start of picture text -----**
1.2±0.05
0.8±0.05
1
2
3
1.Gate
2.Source
ＶＥＳＭ 3.Drain
JEDEC ⎯
JEITA ⎯
TOSHIBA 2-1L1B
0.22±0.05
0.32±0.05
1.2±0.05 0.8±0.05 0.40.4
0.13±0.05
0.5±0.05
**----- End of picture text -----**
Weight: 1.5 mg (typ.)
## **Electrical Characteristics (Ta** = **25°C)**
|**lectrical Characteristics (**|**lectrical Characteristics (**|**Ta**=**25°C)**||||||
|---|---|---|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Test Condition**|**Min**|**Typ.**|**Max**|**Unit**|
|Gate leakage current||IGSS|VGS = ±10 V, VDS =0 V|⎯|⎯|±10|μA|
|Drain–source breakdown voltage||V(BR) DSS|ID =0.1 mA, VGS =0 V|20|⎯|⎯|V|
|Drain cutoff current||IDSS|VDS =20 V, VGS =0 V|⎯|⎯|1|μA|
|Gate threshold voltage||Vth|VDS =3 V, ID =1 mA|0.4|⎯|1.0|V|
|Forward transfer admittance||⏐Yfs⏐|VDS =3 V, ID =50 mA (Note 2)|115|⎯|⎯|mS|
|Drain–source ON-resistance||RDS (ON)|ID =50 mA, VGS =4 V (Note 2)|⎯|1.5|3|Ω|
||||ID =50 mA, VGS =2.5 V (Note 2)|⎯|2|4||
||||ID =5 mA, VGS =1.5 V (Note 2)|⎯|3|8||
||||ID =5 mA, VGS =1.2 V (Note 2)|⎯|5|20||
|Input capacitance||Ciss|VDS =3 V, VGS =0 V, f=1 MHz|⎯|9.5|⎯|pF|
|Reverse transfer capacitance||Crss||⎯|4.1|⎯||
|Output capacitance||Coss||⎯|9.5|⎯||
|Switching time|Turn-on time|ton|VDD =3 V, ID =50 mA,
VGS =0 to 2.5 V|⎯|115|⎯|ns|
||Turn-off time|toff||⎯|300|⎯||
|Drain–source forward voltage||VDSF|ID =- 180 mA, VGS =0 V (Note 2)|⎯|-0.9|-1.2|V|
Note 2: Pulse test
Start of commercial production 2008-01
2014-03-01
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SSM3K35MFV
## **Switching Time Test Circuit**
## **(a) Test Circuit (b) VIN**
**==> picture [408 x 141] intentionally omitted <==**
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OUT 2.5 V 90%
2.5 V
IN
10%
0
RL 0 V
10 μs VDD (c) VOUT VDD
10%
VDD = 3 V
Duty ≤ 1%
90%
VIN: tr, tf < 5 ns VDS (ON)
(Zout = 50 Ω) tr tf
Common Source
Ta = 25°C ton toff
Ω
50
**----- End of picture text -----**
## **Marking**
**Equivalent Circuit (top view)**
**==> picture [222 x 91] intentionally omitted <==**
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3 3
KZ
1 2 1 2
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## **Notice on Usage**
Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).)
Take this into consideration when using the device.
## **Handling Precaution**
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials.
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SSM3K35MFV
**==> picture [436 x 659] intentionally omitted <==**
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ID – VDS ID – VGS
400 1000
10 4 2.5 Common Source Common Source
Ta = 25°C VDS = 3 V
nee ee i ====—_-=—-
100
300
HA or pf
1.8
Ta = 100°C
10
200
25°C
−25°C
1.5 1
100
0.1
VGS = 1.2 V
0 0.01
0 0.5 1 1.5 2 0 1 2 3
Drain–source voltage VDS (V) Gate–source voltage VGS (V)
RDS (ON) – VGS RDS (ON) – VGS
10 10
Common Source Common Source
|HEREPte| | | | EE| ID = 5 mA | [tt] SESEttrH ID = 50 mA
| te tT ty tT | ET | | | ET
5 5
| tT | | TT TT PET fT | TE
| IKtT | | | T TT P ikPT | | || | T tY
Fi\ eee Si\eee
25°C 25°C
a Ta = 100°C PA SE Ta = 100°C
| | See ee −25°C 2 2S −25°C
0 0
0 Pt 2 TT TT 4 Pe 6 8 10 0 PT tT 2 | EE 4 6 8 10
Gate–source voltage VGS (V) Gate–source voltage VGS (V)
RDS (ON) – ID RDS (ON) – Ta
10 10
Common Source
Common Source
Ta = 25°C
a Sar ammean es
aAre TITEL PTT]| i | hl
5 apT VGS = 1.2 V NT eNPATNVATI|MaELT 5 CEEpe VGS = 1.2 V, ID = 5 mA e TEre_
e 1.5 V e 1.5 V, 5 mA =
p 2.5 V I AINE ll 2.5 V, 50 mA i =T
S 4 V t III e e
4 V, 50 mA
0 i CoCo 0 e e e e
1 10 100 1000 −50 0 50 100 150
Drain current ID (mA) Ambient temperature Ta (°C)
(mA) (mA)
D D
Drain current I Drain current I
(Ω) (Ω)
DS (ON) DS (ON)
R R
Drain–source ON-resistance Drain–source ON-resistance
(Ω) (Ω)
DS (ON) DS (ON)
R R
Drain–source ON-resistance Drain–source ON-resistance
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2014-03-01
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SSM3K35MFV
**==> picture [194 x 183] intentionally omitted <==**
**----- Start of picture text -----**
Vth – Ta
1.0
Common Source
ID = 1 mA
VDS = 3 V
SS
PSS er
0.5 P| | | | |
rf | fl fl lt
a
CTE eee
0 ee
−50 0 50 100 150
Ambient temperature Ta (°C)
(V)
th
Gate threshold voltage V
**----- End of picture text -----**
**==> picture [36 x 10] intentionally omitted <==**
**----- Start of picture text -----**
⎪Yfs⎪ – ID
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**==> picture [201 x 167] intentionally omitted <==**
**----- Start of picture text -----**
500
300
a | et
100
err
50
30 et
PAL PE
10
OB | RE
5
3 Common Source
V DS = 3 V
1 SethETN LL Ta = 25°C
1 10 100 1000
Drain current ID (mA)
(mS)
⎪
fs
Y
⎪
Forward transfer admittance
**----- End of picture text -----**
**==> picture [196 x 183] intentionally omitted <==**
**----- Start of picture text -----**
IDR – VDS
100
VCommon Source GS = 0 V =====—=——=
100 D IDR 27 ¢4ennn
= =a ===
10 G SRST S GRAFae oe 25°C
mt
Ta = 100°C −25°C
1
0.1 Sane 22 eeeeeee8
SSS
0.01 Pity VE yy tt
0 −0.5 −1 −1.5
Drain–source voltage VDS (V)
(mA)
DR
Drain reverse current I
**----- End of picture text -----**
**==> picture [197 x 156] intentionally omitted <==**
**----- Start of picture text -----**
C – VDS
100 FE tH HH
50
Ee
| |
RaelSMANE
aSSN
10
Ciss
5 C oss
Common Source
VGS = 0 V
f = 1 MHz iS Crss
Ta = 25°C
1 Cua
0.1 0.5 1 5 10 50 100
Capacitance C (pF)
**----- End of picture text -----**
Drain – Source voltage VDS (V)
**==> picture [429 x 189] intentionally omitted <==**
**----- Start of picture text -----**
t – ID PD – Ta
5000 250
Mounted on FR4 board
3000 toff Common Source VDD = 3 V ( Cu Pad : 585 mm 25.4mm × 25.4mm × 1.6t , [2] )
ricoHHH HHHct‘<‘é V Ta GS= 25°C = 0 to 2.5 V étés~*«*d | 200 HH|
1000 tf SNUTIE ET_E | >>
eee pf | | ft ft tt4
500
150
300 Pt TINGE Tt MS
100 t on 100
AN trill Ht ttt tt
50 t r
30 EE 50 p | f | |} [Not]
TT Cnn pt fot | | A]
10 PL TADIME LUVIN ELT ET 0 ee
0.1 1 10 100 1000 0 20 40 60 80 100 120 140 160
Drain current ID (mA) Ambient temperature Ta (°C)
(mW)
D
Switching time t (ns)
Drain Power Dissipation P
**----- End of picture text -----**
2014-03-01
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SSM3K35MFV
## **RESTRICTIONS ON PRODUCT USE**
- Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice.
- This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
- Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. **TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS.**
- **PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT (** " **UNINTENDED USE** " **).** Except for specific applications as expressly stated in this document, Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. **IF YOU USE PRODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT.** For details, please contact your TOSHIBA sales representative.
- Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
- Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations.
- The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
- **ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.**
- Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
- Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. **TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.**
2014-03-01
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## Links
- [View this product on Novapart](https://novapart.co/products/SSM3K35MFV,L3XGF(T/power-mosfet-n-channel-20-v-180-ma-3-ohm-sot-723)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/toshiba/ssm3k35mfv-l3xgf-t/mosfet-n-ch-20v-0-18a-sot-723/dp/4274857)
---
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