# Power MOSFET, N Channel, 20 V, 2 A, 0.123 ohm, SOT-323F, Surface Mount ![Product image](https://novapart.co/image/farnell:4381019RL/) **URL**: https://novapart.co/products/SSM3K122TU,LF(T/power-mosfet-n-channel-20-v-2-a-0123-ohm-sot-323f **SKU**: SSM3K122TU,LF(T **Manufacturer**: TOSHIBA **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.0870 **Stock**: 1000+ **Lead Time**: 106 days (indicative) ## Specifications | Parameter | Value | |---|---| | Svhc | To Be Advised | | No. Of Pins | 3Pins | | Channel Type | N Channel | | Product Range | U-MOSIII Series | | Qualification | - | | Power Dissipation | 500mW | | Transistor Mounting | Surface Mount | | Rds(On) Test Voltage | 4V | | Transistor Case Style | SOT-323F | | Drain Source Voltage Vds | 20V | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 2A | | Drain Source On State Resistance | 0.123ohm | | Gate Source Threshold Voltage Max | 1V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:4381019RL/) SSM3K122TU TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ## **SSM3K122TU** ## Power Management Switch Applications High-Speed Switching Applications • AEC-Q101 qualified (Note 1) **Unit: mm** • 1.5 V drive 2.1±0.1 • Low ON-resistance: Ron = 304 mΩ (max) (@VGS = 1.5 V) 1.7±0.1 Ron = 211 mΩ (max) (@VGS = 1.8 V) Ron = 161 mΩ (max) (@VGS = 2.5 V) Ron = 123 mΩ (max) (@VGS = 4.0 V) 1 Note 1: For detail information, please contact our sales. 2 3 ~~|_|~~ **Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit** Drain-Source voltage VDSS 20 V Gate-Source voltage VGSS ± 10 V DC ID 2.0 Drain current A Pulse IDP 4.0 1: Gate Drain power dissipation PD (Note 1) 800 mW 2: Source PD (Note 2) 500 UFM 3: Drain Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C **JEDEC ―** ~~===== PO_~~ Note: Using continuously under heavy loads (e.g. the application of high **JEITA ―** temperature/current/voltage and the significant change in ~~PO~~ temperature, etc.) may cause this product to decrease in the **TOSHIBA 2-2U1A** ~~PO~~ reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum **Weight: 6.6 mg (typ.)** ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/ “Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). - Note 1: Mounted on a ceramic board. - (25.4 mm × 25.4 mm × 0.8 t, Cu Pad: 645 mm[2] ) - Note 2: Mounted on a FR4 board. - (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm[2] ) Start of commercial production 2007-10 2020-06-22 1 © 2020 Toshiba Electronic Devices & Storage Corporation SSM3K122TU ## **Electrical Characteristics (Ta = 25°C)** |**Characteristics**
~~a~~|**Characteristics**
~~a~~|**Symbol**
~~Ge~~|**Test Condition**
~~Ge~~|**Min**|**Typ.**|**Max**|**Unit**| |---|---|---|---|---|---|---|---| |Drain-Source breakdown voltage
~~a~~||V(BR)DSS|ID =1 mA, VGS =0 V
~~po~~|20|||V| |||V(BR)DSX|ID =1 mA, VGS = −10 V
~~po~~|12|||| |Drain cutoff current
~~pO~~||IDSS
~~pO~~|VDS =20 V, VGS =0 V
~~pO~~|
~~pO~~|
~~pO~~|1
~~pO~~|µA
~~pO~~| |Gate leakage current
~~pO~~||IGSS
~~pO~~|VGS = ±10 V, VDS =0 V
~~pO~~|
~~pO~~|
~~pO~~|±1
~~pO~~|µA
~~pO~~| |Gate threshold voltage
~~pO~~||Vth

~~pO~~|VDS =3 V, ID =1 mA
~~pO~~|0.35
~~pO~~|
~~pO~~|1.0
~~pO~~|V
~~pO~~| |Forward transfer admittance
~~pO~~||Yfs
~~pO~~|VDS =3 V, ID =1.0 A
(Note 3)
~~pO~~|2.6
~~pO~~|5.2
~~pO~~|
~~pO~~|S
~~pO~~| |Drain-Source ON-resistance
~~pO~~
~~pO~~||RDS (ON)
~~pO~~
~~pO~~|ID =1.0 A, VGS =4.0 V
(Note 3)
~~a~~|
~~a~~|87
~~a~~|123
~~a~~|mΩ| ||||ID =1.0 A, VGS =2.5 V
(Note 3)
~~po~~|
~~po~~|112
~~po~~|161
~~po~~|| ||||ID =0.5 A, VGS =1.8 V
(Note 3)
~~pO~~|
~~pO~~|147
~~pO~~|211
~~pO~~|| ||||ID =0.3 A, VGS =1.5 V
(Note 3)
~~po~~|
~~po~~
~~a~~|182
~~po~~
~~ee~~|304
~~po~~|| |Input capacitance
~~pO~~
~~pO~~
~~pO~~||Ciss
~~pO~~
~~pO~~
~~pO~~|VDS =10 V, VGS =0 V, f=1 MHz
~~po~~|
~~po~~
~~a~~
~~a~~|195
~~po~~
~~ee~~
~~ee~~|
~~po~~|pF| |Output capacitance
~~pO~~
~~pO~~
~~pO~~
~~pO~~||Coss
~~pO~~
~~pO~~
~~pO~~
~~pO~~||
~~po~~
~~a~~
~~a~~
~~a~~|35
~~po~~
~~ee~~
~~ee~~
~~ee~~|
~~po~~|| |Reverse transfer capacitance
~~pO~~
~~pO~~
~~pO~~
~~pO~~||Crss
~~pO~~
~~pO~~
~~pO~~
~~pO~~||
~~a~~
~~a~~
~~a~~
~~a~~|29
~~ee~~
~~ee~~
~~ee~~
~~ee~~||| |Total Gate Charge
~~pO~~
~~pO~~
~~pO~~
~~pO~~||Qg
~~pO~~
~~pO~~
~~pO~~
~~pO~~|VDS= 10 V, ID= 2.0 A, VGS= 4 V|
~~a~~
~~a~~
~~a~~
~~**a**~~|3.4
~~ee~~
~~ee~~
~~ee~~
~~**ee**~~||nC| |Gate−Source Charge
~~pO~~
~~pO~~
~~pO~~||Qgs
~~pO~~
~~pO~~
~~pO~~||
~~a~~
~~a~~
~~**a**~~|2.3
~~ee~~
~~ee~~
~~**ee**~~||| |Gate−Drain Charge
~~pO~~
~~pO~~||Qgd
~~pO~~
~~pO~~||
~~a~~
~~**a**~~|1.1
~~ee~~
~~**ee**~~||| |Switching time
~~pO~~
~~ee~~|Turn-on time
~~pO~~
~~ee~~|ton
~~pO~~
~~ee~~|VDD =10 V, ID =0.5 A,
VGS =0 to 2.5 V, RG=4.7Ω
~~ee~~|
~~**a** ~~
~~ee~~|8.0
~~**ee**~~
~~ee~~|
~~ee~~|ns
~~ee~~| ||Turn-off time
~~ee~~|toff
~~ee~~||
~~ee~~
~~CO~~|9.0
~~ee~~
~~CO~~|
~~ee~~|| |Drain-Source forward voltage
~~GG~~||VDSF
~~GG~~|ID = −2.0 A, VGS =0 V (Note 3)
~~GG~~|
~~GG~~
~~CO~~|−0.85
~~GG~~
~~CO~~|-1.2
~~GG~~|V
~~GG~~| Note 3: Pulse test 2020-06-22 2 © 2020 Toshiba Electronic Devices & Storage Corporation SSM3K122TU ## **Switching Time Test Circuit** **==> picture [81 x 11] intentionally omitted <==** **----- Start of picture text -----**
(a) Test Circuit
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(b) VIN
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**==> picture [401 x 144] intentionally omitted <==** **----- Start of picture text -----**
2.5 V
OUT 90%
2.5 V
IN
10%
0 V
0
VDD
ae 10 µs VDD (c) VOUT 90%
VDD = 10 V VDS (ON) 10%
RG = 4.7 Ω tr tf
Duty ≤ 1%
VIN: tr, tf < 5 ns ton toff
Common Source
Ta = 25°C
G
R
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## **Marking Equivalent Circuit (top view)** **==> picture [241 x 103] intentionally omitted <==** **----- Start of picture text -----**
3 3
KKC
Je
1 2 1 2
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## **Notice on Usage** Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth, and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Take this into consideration when using the device. ## **Handling Precaution** When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2020-06-22 3 © 2020 Toshiba Electronic Devices & Storage Corporation SSM3K122TU **==> picture [448 x 645] intentionally omitted <==** **----- Start of picture text -----**
ID – VDS ID – VGS
4 10
10 V 4.0 V 2.5 V Common Source Common Source
TTI Ta = 25 °C . VDS = 3 V Se
1.8 V 1
3 Uf a a
0.1
2 1.5 V
KA LETTTI 0.01 my, Ta = 100 ° C im 25 ° C
1 − 25 ° C
VGS = 1.2 V 0.001
0 Zea 0.0001 =.
0 0.2 0.4 0.6 0.8 1 0 1.0 2.0
Drain–source voltage VDS (V) Gate–source voltage VGS (V)
RDS (ON) – VGS RDS (ON) – ID
500 500
Common Source
ID =1.0A
Ta = 25°C
400 TLL Common Source 400 ==
Ta = 25°C
TELLSp ee ToL|
300 300
FREE EEE
1.5 V
200 0 \ \ 200 e VA e
1.8 V
PIE EEE a
25 °C Ta = 100 °C 2.5 V
100 100
VGS = 4.0 V
ai SS= S 2ee SS ee Pe pe
− 25 °C
0 FEELELEL I. 0 a
0 2 4 6 8 10 0 1 2 3 4
Gate–source voltage VGS (V) Drain current ID (A)
RDS (ON) – Ta Vth – Ta
400 1.0
Common Source Common Source
VDS = 3V
ID = 1 mA
300 PCMPf] te pteT ET AEEptt ff
0.3 A / 1.5 V
pp ET Ef ee t RoTSE
200 0.5 A / 1.8 V 0.5
a e es
100 |eTde ID = 1.0 A / VGS 1.0 A / 2.5 V = = 4.0 V Pteefy tt [Pe]
ST ee
mal
0 P| | ft | ft ft | 0 ee
−50 0 50 100 150 −50 0 50 100 150
Ambient temperature Ta (°C) Ambient temperature Ta (°C)
(A)
D (A)
Drain current I D
Drain current I
(mΩ) (mΩ)
RDS (ON) RDS (ON)
Drain–source ON-resistance Drain–source ON-resistance
(V)
th
(mΩ)
DS (ON)
R
Drain–source ON-resistance
Gate threshold voltage V
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The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. 2020-06-22 4 © 2020 Toshiba Electronic Devices & Storage Corporation SSM3K122TU **==> picture [201 x 649] intentionally omitted <==** **----- Start of picture text -----**
|Yfs| – ID
10
Common Source
VDS = 3 V
Ta = 25°C
3
721
1
0.3 7 TTT
CTT CT
0.1
0.01 0.1 1 10
Drain current ID (A)
C – VDS
1000
500
300
Ciss
|
100
50
30 Common Source Coss
Ta = 25°C Crss
f = 1 MHz Conon
VGS = 0 V
10 nt,
0.1 1 10 100
Drain–source voltage VDS (V)
Dynamic Input Characteristic
10
Common Source
ID = 2.0 A
Ta = 25°C
8 / EAR| |fA.
H——ar PYAe| |
6 a) ae
VDD=10V VDD=16V
a
4
| 4 ee
2 |Yt[| Fl }ft +
y—|_}VET[ft [| f
0
0 2 4 6 8 10
Total Gate Charge Qg (nC)
(S)

fs
Y

Forward transfer admittance
Capacitance C (pF)
(V)
GS
Gate–Source voltage V
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**==> picture [203 x 421] intentionally omitted <==** **----- Start of picture text -----**
IDR – VDS
10
Common Source
VGS = 0 V
D
1
G IDR
aa] =
0.1 S
Ta =100 °C
25 °C
0.01 SS = =
−25 °C
0.001 aFAee eee ee [i
0 –0.2 –0.4 –0.6 –0.8 –1.0 –1.2
Drain–source voltage VDS (V)
t – ID
1000
Common Source
VDD = 10 V
VGS = 0 to 2.5 V
Ta = 25 °C
toff
RG = 4.7Ω
100
tf SNEHH
10
ton
t r
1 PCE0 Sarre
0.01 0.1 1 10
Drain current ID (A)
(A)
DR
Drain reverse current I
Switching time t (ns)
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The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. 2020-06-22 5 © 2020 Toshiba Electronic Devices & Storage Corporation SSM3K122TU **==> picture [195 x 193] intentionally omitted <==** **----- Start of picture text -----**
t – ID
600
c
tut gu gu ci Gan
100 b
a
AEeee |ee
ee
10
i A A
Single Pulse
a: Mounted on a ceramic board
(25.4 x 25.4 x 0.8 mm Cu Pad : 645 mm [2] )
b: Mounted on an FR4 board
EI EU (25.4 x 25.4 x 1.6 mm Cu Pad : 645 mm [2] )
c: Mounted on an FR4 board
1 BNA (25.4 x 25.4 x 1.6 mm Cu Pad : 0.36 mm [2] x 3)
0.001 0.01 0.1 1 10 100 600
Pulse width tw (s)
Transient thermal impedance Rth (°C/W)
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**==> picture [31 x 8] intentionally omitted <==** **----- Start of picture text -----**
PD – Ta
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**==> picture [200 x 183] intentionally omitted <==** **----- Start of picture text -----**
1000
a: Mounted on an FR4 board
(25.4 x 25.4 x 1.6 mm Cu Pad : 645 mm [2] )
b: Mounted on a ceramic board
(25.4 x 25.4 x 0.8 mm Cu Pad : 645 mm [2] )
800 o b e
POCEELEN LEE\
600
a
400 TTT P N ENT TTT
LECCE NCCETE
200 LEE
0 PCECEEEEEECELELEETT EET ANNATNS S
-40 -20 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
(mW)
D
Drain power dissipation P
**----- End of picture text -----**
The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. 2020-06-22 6 © 2020 Toshiba Electronic Devices & Storage Corporation SSM3K122TU ## **RESTRICTIONS ON PRODUCT USE** Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. Hardware, software and systems described in this document are collectively referred to as “Product”. - TOSHIBA reserves the right to make changes to the information in this document and related Product without notice. - This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. - Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. **TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS.** - **PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT (** " **UNINTENDED USE** " **).** Except for specific applications as expressly stated in this document, Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, lifesaving and/or life supporting medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, and devices related to power plant. **IF YOU USE PRODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT.** For details, please contact your TOSHIBA sales representative or contact us via our website. - Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. - Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. - The information contained herein is presented only as guidance for Product use. 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