# Power MOSFET, N Channel, 20 V, 3.2 A, 0.048 ohm, SOT-323F, Surface Mount
**URL**: https://novapart.co/products/SSM3K121TU,LF(T/power-mosfet-n-channel-20-v-32-a-0048-ohm-sot-323f
**SKU**: SSM3K121TU,LF(T
**Manufacturer**: TOSHIBA
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1090
**Stock**: 1000+
**Lead Time**: 106 days (indicative)
## Specifications
| Parameter | Value |
|---|---|
| Svhc | No SVHC (21-Jan-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 800mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4V |
| Transistor Case Style | SOT-323F |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 3.2A |
| Drain Source On State Resistance | 0.048ohm |
| Gate Source Threshold Voltage Max | 1V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:4707845/)
SSM3K121TU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
## **SSM3K121TU**
Unit: mm
## **1. Applications**
- Power Management Switch Applications
- ● High-Speed Switching Applications
|Power Management Switch Applications|Power Management Switch Applications|Power Management Switch Applications||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|●
Power Management Switch Applications
●
High-Speed Switching Applications
**2. Features**
●
1.5 V drive
●
Low ON-resistance:
Ron= 140 mΩ (max) (@VGS= 1.5 V)
Ron= 93 mΩ (max) (@VGS= 1.8 V)
Ron= 63 mΩ (max) (@VGS= 2.5 V)
Ron= 48 mΩ (max) (@VGS= 4.0 V)
**3. Absolute Maximum Ratings (Ta = 25°C) (Note)**|||1: Gate
-0.05
1.7±0.1
2.1±0.1
0.65±0.05
1
2
2.0±0.1
3
0.7±0.05
+0.1
0.3
0.166±0.05
~~B~~|||||||||||||
|**Characteristics**|**Symbol**
**Rating**
**Unit**|||||||2: Source||||||||
|Drain-Source voltage|VDS
20
V||UFM|||||3: Drain||||||||
|Gate-Source voltage|VGSS
± 10
V|||||||||||||||
|DC|ID
3.2||JEDEC||||||-|||||||
|Drain current|A|||||||||||||||
|Pulse|IDP
6.4||JEITA||||||-|||||||
|Drain power dissipation|PD (Note 1)
800
mW
PD (Note 2)
500||TOSHIBA
Weight: 6.6 mg (typ.)|||||Weight: 6.6 mg (typ.)|2-2U1A
Weight: 6.6 mg (typ.)|||||||
|Channel temperature|Tch
150
°C|||||||||||||||
|Storage temperature range|Tstg
-55 to 150
°C|||||||||||||||
## **2. Features**
## **3. Absolute Maximum Ratings (Ta = 25°C) (Note)**
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current / voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ( “Handling Precautions” / “Derating Concept and Methods” ) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on a ceramic board.
- (25.4 mm 25.4 mm 0.8 t, Cu Pad: 645 mm[2] )
- Note 2: Mounted on a FR4 board.
- (25.4 mm 25.4 mm 1.6 t, Cu Pad: 645 mm[2] )
Start of commercial production 2006-11
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Toshiba Electronic Devices & Storage Corporation
SSM3K121TU
## ~~eee~~
## **4. Electrical Characteristics**
## **4.1. Electrical Characteristics (Ta = 25°C)**
|**4.1. Electrical Characteristics (Ta = 25°C)**|**4.1. Electrical Characteristics (Ta = 25°C)**|**4.1. Electrical Characteristics (Ta = 25°C)**|**4.1. Electrical Characteristics (Ta = 25°C)**|**4.1. Electrical Characteristics (Ta = 25°C)**|**4.1. Electrical Characteristics (Ta = 25°C)**|**4.1. Electrical Characteristics (Ta = 25°C)**|**4.1. Electrical Characteristics (Ta = 25°C)**|**4.1. Electrical Characteristics (Ta = 25°C)**|**4.1. Electrical Characteristics (Ta = 25°C)**|**4.1. Electrical Characteristics (Ta = 25°C)**|
|---|---|---|---|---|---|---|---|---|---|---|
|**Characteristics**
**Symbol**
**Test Condition**
**Min**
**Typ.**
**Max**
**Unit**
Drain-Source breakdown voltage
V(BR) DSS
ID= 1 mA, VGS= 0
20
-
-
V
V(BR) DSX
ID= 1 mA, VGS= -10 V
12
-
-
Drain cutoff current
IDSS
VDS= 20 V, VGS= 0
-
-
1
μA
~~as~~
~~ee~~
~~ee~~
~~ee ee~~
~~—————————~~|||||||||||
|Gate leakage current|IGSS|VGS= ± 10 V, VDS= 0|-|||-|±1|||μA|
|Gate threshold voltage|Vth|VDS= 3 V, ID= 1 mA|0.35|||-|1.0|||V|
|Forward transfer admittance||Yfs||VDS= 3 V, ID= 2.0 A
(Note 3)|6.5|6.5||13||-||S|
|||ID= 2.0 A, VGS= 4.0 V
(Note 3)|-|||36|48||||
|Drain-Source ON-resistance|RDS (ON)|ID= 2.0 A, VGS= 2.5 V
(Note 3)
ID= 1.0 A, VGS= 1.8 V
(Note 3)|-
-|||46
60|63
93|||mΩ|
|||ID= 0.5 A, VGS= 1.5 V
(Note 3)|-|||75|140||||
|Input capacitance
Ciss
VDS= 10 V, VGS= 0, f = 1 MHz
-
400
-
pF
Output capacitance
Coss
-
68
-
Reverse transfer capacitance
Crss
-
60
-
Total Gate Charge
Qg
VDS= 10 V, IDS= 3.2 A, VGS= 4 V
-
5.9
-
nC
Gate-Source Charge
Qgs
-
4.1
-
Gate-Drain Charge
Qgd
-
1.8
-
~~pf~~
~~——~~|||||||||||
|Switching time
Turn-on time
Turn-off time
Drain-Source forward voltage
~~a~~|ton
toff
VDSF|VDD= 10 V, ID= 2 A,
VGS= 0 to 2.5 V, RG= 4.7 Ω
See4.2
ID= -3.2 A, VGS= 0 V (Note 3)|-
-
-|||14
15
-0.85|-
-
-1.2|||ns
V|
|Note 3:Pulse test|||||||||||
|**4.2.Switching Time Test Circuit**|||||||||||
|(a) Test Circuit
2.5V
~~7~~
;|2.5 V
(b) Input Waveform
our||10%||||90%||||
|||0 V
(c) Output|||||||||
|||VDD
Waveform||||90%|||||
|VDD= 10 V|||||||||||
|RGS= 4.7 Ω
Duty ≤ 1 %||VDS (ON)|||tr|10%||tf|||
|VIN: tr, tf 5 ns|||||||||||
|Common Source
Ta = 25 °C|||ton||||toff||||
## **4.2. Switching Time Test Circuit**
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©2026 Toshiba Electronic Devices & Storage Corporation
2026-04-14 Rev. 2.0.A
SSM3K121TU
## **5. Marking, Equivalent Circuit (top view)**
3 KKB 1 2 =H
## **6. Notice on Usage**
Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth, and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).)
Take this into consideration when using the device.
## **7. Handling Precaution**
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials.
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©2026
2026-04-14 Rev. 2.0.A
Toshiba Electronic Devices & Storage Corporation
SSM3K121TU
## **8. Characteristic Chart (Note)**
**==> picture [185 x 181] intentionally omitted <==**
**----- Start of picture text -----**
ID – VDS
7
4.0 V 2.5 V 1.8 V
6
5 4 3 UEWAT e o 1.5 V
2
VGS = 1.2 V
1
Common Source
Ta = 25 °C
0 P o
0 0.2 0.4 0.6 0.8 1.0
Drain - Source voltage VDS (V)
(A)
D
Drain current I
**----- End of picture text -----**
**==> picture [29 x 8] intentionally omitted <==**
**----- Start of picture text -----**
ID – VGS
**----- End of picture text -----**
**==> picture [195 x 165] intentionally omitted <==**
**----- Start of picture text -----**
10 Common Source
V DS = 3 V
1
0.1 ee (22
Ta = 100 °C
-— [of]
0.01
25 °C
0.001 - 25 °C
0.0001 ==ciiaaae
0 1.0 2.0
Gate - Source voltage VGS (V)
(A)
D
Drain current I
**----- End of picture text -----**
**==> picture [446 x 425] intentionally omitted <==**
**----- Start of picture text -----**
RDS (ON) – VGS RDS (ON) – ID
200 200
ID =2.0A Common Source
| Common Source Ta = 25°C | [{{{]
Sr PA | |
See an
100 100
FIAT | | dt | Fp {| 1.5V | JA fT lt
1.8 V
n a 25 °C e we
Ta = 100 °C 2.5 V
CASS oS See ee VGS = 4.0 V e
a. —_——— - 25 °C a a
0 a 0 a
0 2 4 6 8 0 2 4 6
Gate - Source voltage VGS (V) Drain current ID (A)
RDS (ON) – Ta Vth – Ta
200 1.0
Common Source Common Source
rr ee e | | |tt VDS = 3 V
0.8 ID = 1 mA
FEEEEE SSH
1.0 A / 1.8 V 0.6
0.5A / 1.5 V
100 py)S eer ai
2.0A / 2.5 V
0.4
|p| | | ft | | | EA
Bee er a pt | ft tt tt
0.2
jr | tT | ft |
ID = 2.0 A / VGS = 4.0 V
0 ae 0 eee
-50 pt | 0 tt 50 tt 100 150 -50 Pp | i 0 | 50 | | 100 | 150
Ambient temperature Ta (°C) Ambient temperature Ta (°C)
(mΩ)
(mΩ)
DS (ON)
R
DS (ON)
R
Drain – Source on-resistance
Drain – Source on-resistance
(V)
th
(mΩ)
DS (ON)
R
Gate threshold voltage V
Drain – Source on-resistance
**----- End of picture text -----**
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SSM3K121TU
**==> picture [446 x 189] intentionally omitted <==**
**----- Start of picture text -----**
|Yfs| – ID IDR – VDS
30 Common Source 10 Common Source
10 VDS = 3 V V Ta = 25 °C GS = 0 V D IDR
Ta = 25 °C 1
3 |PR ee| G S _——== a———
Hee = 2=
1 PETIT TTT 0.1 eeeey ey A) ee
0.3
Z| 0.01 ee
0.1 ETI ETT _———
100 °C
0.001
0.03
AC = SS 25 °C -25 ° C
0.01 Cn nn 0.0001 of ES
0.001 0.01 0.1 1 10
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
Drain current ID (A) Drain-Source voltage VDS (V)
| (S)
fs
(A)
DR
Drain reverse current I
Forward transfer admittance |Y
**----- End of picture text -----**
**==> picture [201 x 190] intentionally omitted <==**
**----- Start of picture text -----**
C – VDS
1000
es
Ciss
300
SSSRSSTt
100 NW |
Coss
Crss
30 Common Source
Ta = 25 °C
f = 1 MHz
VGS = 0 V
10 LTA LUI
0.1 1 10 100
Drain – Source voltage VDS (V)
Capacitance C (pF)
**----- End of picture text -----**
**==> picture [198 x 190] intentionally omitted <==**
**----- Start of picture text -----**
t – ID
1000
Common Source
PEt ot VDD = 10 V VGS = 0 2.5 V
toff
Ta = 25 °C
RG = 4.7 Ω
100 SaiNSIT tf Sr
eT
ton
10
tr
1 Tt;Ca Ci Co
0.01 0.1 1 10
Drain current ID (A)
Switching time t (ns)
**----- End of picture text -----**
Dynamic Input Characteristic
**==> picture [204 x 190] intentionally omitted <==**
**----- Start of picture text -----**
10
Common
Source || 4
8 ID = 3.2A || Af]
Ta = 25°C
6 | |||[AfYW| ||
VDD=10 V
4 VDD=16 V
2
| |A7 | | |
ro |dt
0 f | | | | | 4 ]
0 5 10 15
Total Gate Charge Qg (nC)
(V)
GS
V
Gate-Source voltage
**----- End of picture text -----**
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SSM3K121TU
**==> picture [24 x 8] intentionally omitted <==**
**----- Start of picture text -----**
rth – tw
**----- End of picture text -----**
**==> picture [27 x 8] intentionally omitted <==**
**----- Start of picture text -----**
PD – Ta
**----- End of picture text -----**
**==> picture [439 x 182] intentionally omitted <==**
**----- Start of picture text -----**
600 1000
a: Mounted on ceramic board
| | || || c (25.4mm x 25.4mm x 0.8t ,
Cu Pad : 645 mm [2] )
b: Mounted on FR4 board
Stat Shi ait pe ta 800 To (25.4mm x 25.4mm x 1.6t , Cu Pad : 645 mm [2] )
100 b a
a
HEBBEN 242 | | rrrTT 600
Seite adit matt weet tt HEEL
ST b SSE EEEEEE
400
10 MPM TTT TTT TNT NTT
Sy AIL TTT PSN
Single pulse
a: Mounted on ceramic board
? sent (25.4mm x 25.4mm x 0.8t , Cu Pad : 645 mm eee ee el [2] ) 200 TEEN INU
b: Mounted on FR4 board
; (25.4mm x 25.4mm x 1.6t , Cu Pad : 645 mm [2] ) EEEEEEEECL DSSS
c: Mounted on FR4 Board PTT
1 i (25.4mm x 25.4mm x 1.6t , Cu Pad : 0.36 mm [2] x 3) 0 PECEEEEEECEEEHSNBSE
0.001 0.01 0.1 1 10 100 600 -40 -20 0 20 40 60 80 100 120 140 160
Pulse width tw (s) Ambient temperature Ta (°C)
(mW)
D
Drain power dissipation P
Transient thermal impedance Rth (°C/W)
**----- End of picture text -----**
Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted.
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©2026
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SSM3K121TU
## **RESTRICTIONS ON PRODUCT USE**
Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. Hardware, software and systems described in this document are collectively referred to as “Product”.
- TOSHIBA reserves the right to make changes to the information in this document and related Product without notice.
- This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
- Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. **TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS.**
- **PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT**
**("UNINTENDED USE").** equipment used in nuclear facilities, equipment used in the aerospace industry, Class 3 medical devices, equipment used for automobiles, and military vehicles and munitions. **IF YOU USE PRODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT.** For details, please contact your TOSHIBA sales representative or contact us via our website.
- Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
- Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations.
- The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
- **ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.**
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- Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. **TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.**
- https://toshiba.semicon storage.com/
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©2026 Toshiba Electronic Devices & Storage Corporation
2026-04-14 Rev. 2.0.A
## Links
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---
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