# Bipolar (BJT) Single Transistor, NPN, 45 V, 100 mA, 450 mW, TO-226AA, Through Hole

![Product image](https://novapart.co/image/farnell:2454126/)

**URL**: https://novapart.co/products/SS9014CBU./bipolar-bjt-single-transistor-npn-45-v-100-ma-450
**SKU**: SS9014CBU.
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €0.1110
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Power Dissipation | 450mW |
| Dc Current Gain Hfe | 200hFE |
| Transistor Mounting | Through Hole |
| Transistor Polarity | NPN |
| Transition Frequency | 270MHz |
| Transistor Case Style | TO-226AA |
| Dc Current Gain Hfe Min | 200hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 100mA |
| Collector Emitter Voltage Max | 45V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2454126/)

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## **SS9014** 

## **Pre-Amplifier, Low Level & Low Noise** 

- High total power dissipation. (PT=450mW) 

- • High hFE  and good linearity • Complementary to SS9015 

**==> picture [116 x 91] intentionally omitted <==**

**----- Start of picture text -----**<br>
1 TO-92<br>1. Emitter   2. Base   3. Collector<br>**----- End of picture text -----**<br>


## **NPN Epitaxial Silicon Transistor** 

**Absolute Maximum Ratings** Ta=25°C unless otherwise noted 

|**Absolute M**|**aximum Ratings**Ta=25°C unless otherwise noted|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Ratings**|**Units**|
|VCBO|Collector-Base Voltage|50|V|
|VCEO|Collector-Emitter Voltage|45|V|
|VEBO|Emitter-Base Voltage|5|V|
|IC|Collector Current|100|mA|
|PC|Collector Power Dissipation|450|mW|
|TJ|Junction Temperature|150|°C|
|TSTG|Storage Temperature|-55 ~ 150|°C|



**Electrical Characteristics** Ta=25°C unless otherwise noted 

|**Electric**|**al Characteristics**Ta=25°C unl|ess otherwise noted||||
|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Condition**|**Min.**|**Typ.**<br>**M**|**ax.**<br>**Units**|
|BVCBO|Collector-Base Breakdown Voltage|IC =100µA, IE=0|50||V|
|BVCEO|Collector-Emitter Breakdown Voltage|IC =1mA, IB=0|45||V|
|BVEBO|Emitter-Base Breakdown Voltage|IE=100µA, IC =0|5||V|
|ICBO|Collector Cut-off Current|VCB=50V, IE=0|||50<br>nA|
|IEBO|Emitter Cut-off Current|VEB=5V, IC =0|||50<br>nA|
|hFE|DC Current Gain|VCE=5V, IC =1mA|60|280<br>1|000|
|VCE(sat)|Collector-Base Saturation Voltage|IC =100mA, IB=5mA||0.14<br>0|.3|
|VBE(sat)|Base-Emitter Saturation Voltage|IC =100mA, IB=5mA||0.84<br>1|.0<br>V|
|VBE(on)|Base-Emitter  On Voltage|VCE=5V, IC =2mA|0.58|0.63<br>0|.7<br>V|
|Cob|Output Capacitance|VCB=10V, IE=0<br>f=1MHz||2.2<br>3|.5<br>pF|
|fT|Current Gain Bandwidth Product|VCE=5V, IC =10mA|150|270|MHz|
|NF|Noise Figure|VCE=5V, IC=0.2mA<br>f=1KHz, RS=2KΩ||0.9<br>|10<br>dB|



|**hFEClassification**|**hFEClassification**|**hFEClassification**|**hFEClassification**|**hFEClassification**|
|---|---|---|---|---|
|Classification|A|B|C|D|
|hFE|60 ~ 150|100 ~ 300|200 ~ 600|400 ~ 1000|



©2002 Fairchild Semiconductor Corporation 

Rev. A4, November 2002 

## **Typical Characteristics** 

**==> picture [427 x 398] intentionally omitted <==**

**----- Start of picture text -----**<br>
100 1000<br>90 VCE = 5V<br>IB = 160µA<br>80 IB = 140µA<br>70 IB = 120µA<br>IB = 100µA<br>60<br>50 IB = 80µA 100<br>40 IB = 60µA<br>30 IB = 40µA<br>20 IB = 20µA<br>10<br>0 10<br>0 10 20 30 40 50 1 10 100 1000<br>VCE [V], COLLECTOR-EMITTER VOLTAGE IC [mA], COLLECTOR CURRENT<br>Figure 1. Static Characteristic Figure 2. DC current Gain<br>1000 1000<br>VBE (sat) VCE = 5V<br>100 100<br>VCE (sat)<br>IC = 20 IB 10<br>10 1 10 100 1000<br>1 10 100 1000<br>IC [mA], COLLECTOR CURRENT<br>IC [mA], COLLECTOR CURRENT<br>Figure 3. Base-Emitter Saturation Voltage Figure 4. Current Gain Bandwidth Product<br>Collector-Emitter Saturation Voltage<br>, DC CURRENT GAIN<br>FE<br> [mA], COLLECTOR CURRENTIC h<br>(sat)[mV], SATURATION VOLTAGE<br>CE<br>(sat), V<br>BE<br>V<br>[MHz], CURRENT GAIN BANDWIDTH PRODUCTfT<br>**----- End of picture text -----**<br>


©2002 Fairchild Semiconductor Corporation 

Rev. A4, November 2002 

## **Package Dimensions** 

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**----- Start of picture text -----**<br>
TO-92<br>4.58 [+0.25] –0.15<br>0.46 ±0.10<br>1.27TYP 1.27TYP 0.38 [+0.10] –0.05<br>[1.27 ±0.20] [1.27 ±0.20]<br>3.60 ±0.20<br>(R2.29)<br>0.20<br>±<br>4.58<br>0.40<br>±<br>14.47<br>3.86MAX<br>(0.25)<br>0.10 +0.10 –0.05<br>1.02 ± 0.38<br>**----- End of picture text -----**<br>


Dimensions in Millimeters 

©2002 Fairchild Semiconductor Corporation 

Rev. A4, November 2002 

## **TRADEMARKS** 

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 

|ACEx™|FACT™|ImpliedDisconnect™|PACMAN™|SPM™|
|---|---|---|---|---|
|ActiveArray™|FACT Quiet series™|ISOPLANAR™|POP™|Stealth™|
|Bottomless™|FAST®|LittleFET™|Power247™|SuperSOT™-3|
|CoolFET™|FASTr™|MicroFET™|PowerTrench®|SuperSOT™-6|
|_CROSSVOLT_™|FRFET™|MicroPak™|QFET™|SuperSOT™-8|
|DOME™|GlobalOptoisolator™|MICROWIRE™|QS™|SyncFET™|
|EcoSPARK™|GTO™|MSX™|QT Optoelectronics™|TinyLogic™|
|E2CMOS™|HiSeC™|MSXPro™|Quiet Series™|TruTranslation™|
|EnSigna™|I2C™|OCX™|RapidConfigure™|UHC™|
|Across the board.|Around the world.™|OCXPro™|RapidConnect™|UltraFET®|
|The Power Franchise™||OPTOLOGIC®|SILENT SWITCHER®|VCX™|
|Programmable Active Droop™||OPTOPLANAR™|SMART START™||



## **DISCLAIMER** 

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 

## **LIFE SUPPORT POLICY** 

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. 

As used herein: 

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. 

## **PRODUCT STATUS DEFINITIONS** 

## **Definition of Terms** 

|**Datasheet Identification**|**Product Status**|**Definition**|
|---|---|---|
|Advance Information|Formative or In<br>Design|This datasheet contains the design specifications for<br>product development. Specifications may change in<br>any manner without notice.|
|Preliminary|First Production|This datasheet contains preliminary data, and<br>supplementary data will be published at a later date.<br>Fairchild Semiconductor reserves the right to make<br>changes at any time without notice in order to improve<br>design.|
|No Identification Needed|Full Production|This datasheet contains final specifications. Fairchild<br>Semiconductor reserves the right to make changes at<br>any time without notice in order to improve design.|
|Obsolete|Not In Production|This datasheet contains specifications on a product<br>that has been discontinued by Fairchild semiconductor.<br>The datasheet is printed for reference information only.|



©2002 Fairchild Semiconductor Corporation 

Rev. I1 



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