SS16 R2

**SS12 - SS115** 

Taiwan Semiconductor 

## **1A, 20V - 150V Surface Mount Schottky Barrier Rectifiers** 

## FEATURES 

- Low power loss, high efficiency 

- Ideal for automated placement 

- Guardring for overvoltage protection 

- High surge current capability 

- Compliant to RoHS Directive 2011/65/EU and 

in accordance to WEEE 2002/96/EC 

- Halogen-free according to IEC 61249-2-21 definition 

## **DO-214AC (SMA)** 

## MECHANICAL DATA 

**Case:** DO-214AC (SMA) 

Molding compound, UL flammability classification rating 94V-0 

Moisture sensitivity level: level 1, per J-STD-020 

Part No. with suffix "H" means AEC-Q101 qualified 

Packing code with suffix "G" means green compound (halogen-free) 

**Terminal:** Matte tin plated leads, solderable per JESD22-B102 

Meet JESD 201 class 2 whisker test 

**Polarity:** Indicated by cathode band **Weight:** 0.066 g (approximately) 

|MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted)<br>~~LC~~|MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted)<br>~~LC~~|MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted)<br>~~LC~~|MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted)<br>~~LC~~|MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted)<br>~~LC~~|MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted)<br>~~LC~~|MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted)<br>~~LC~~|MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted)<br>~~LC~~|MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted)<br>~~LC~~|MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted)<br>~~LC~~|MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted)<br>~~LC~~|
|---|---|---|---|---|---|---|---|---|---|---|
|PARAMETER<br>~~ee~~|SYMBOL<br>~~ee~~<br>~~nee~~|SS<br>12<br>~~ee~~<br>~~I~~|SS<br>13<br>~~ee~~<br>~~Gs~~|SS<br>14<br>~~ee~~<br>~~ns Gs~~|SS<br>15<br>~~ee~~<br>~~Gs~~|SS<br>16<br>~~ee~~|SS<br>19<br>~~ee~~<br>~~GO~~|SS<br>110<br>~~ee~~<br>~~GO~~|SS<br>115<br>~~ee~~|UNIT<br>~~ee~~|
|Maximum repetitive peak reverse voltage<br>~~I~~|VRRM<br>~~I~~<br>~~nee~~<br>~~nee~~|20<br>~~I~~<br>~~I~~<br>~~I~~|30<br>~~I~~<br>~~Gs~~<br>~~Gs~~|40<br>~~I~~<br>~~ns Gs~~<br>~~ns Gs~~|50<br>~~I~~<br>~~Gs~~<br>~~Gs~~|60<br>~~I~~|90<br>~~I~~<br>~~GO~~<br>~~GO~~|100<br>~~I~~<br>~~GO~~<br>~~GO~~|150<br>~~I~~|V<br>~~I~~|
|Maximum RMS voltage<br>~~I~~|VRMS<br>~~nee~~<br>~~I~~<br>~~nee~~<br>~~nen~~|14<br>~~I ~~<br>~~I~~<br>~~I~~<br>~~I~~|21<br> ~~Gs~~<br>~~I~~<br>~~Gs~~<br>~~(TD~~|28<br>~~ns Gs~~<br>~~I~~<br>~~ns Gs~~<br>~~(TD GD~~|35<br>~~Gs~~<br>~~I~~<br>~~Gs~~<br>~~GD~~|42<br>~~I~~|63<br>~~GO~~<br>~~I~~<br>~~GO~~<br>~~GO~~|70<br>~~GO~~<br>~~I~~<br>~~GO~~<br>~~GO~~|105<br>~~I~~|V<br>~~I~~|
|Maximum DC blocking voltage<br>~~ny~~<br>~~a~~|VDC<br>~~nee~~<br>~~ny~~<br>~~nen~~<br>nn|20<br>~~I ~~<br>~~ny~~<br>~~I~~|30<br> ~~Gs~~<br>~~ny~~<br>~~(TD~~|40<br>~~ns Gs~~<br>~~ny~~<br>~~(TD GD~~|50<br>~~Gs~~<br>~~ny~~<br>~~GD~~|60<br>~~ny~~|90<br>~~GO~~<br>~~ny~~<br>~~GO~~|100<br>~~GO~~<br>~~ny~~<br>~~GO~~|150<br>~~ny~~|V<br>~~ny~~|
|Maximum average forward rectified current<br>~~I~~<br>~~a~~|IF(AV)<br>~~nen~~<br>~~I~~<br>nn|1<br>~~I (TD GD~~<br>~~GO~~<br>~~I~~||||||||A<br>~~I~~|
|Peak forward surge current, 8.3 ms single half sine-wave<br>superimposed on rated load<br>~~a~~|IFSM<br>nn|40||||||||A|
|Maximum instantaneous forward voltage (Note 1)<br>@ 1 A, TJ=25°C<br>@ 1 A, TJ=100°C|VF|0.5<br>0.4|||0.75<br>0.65||0.8<br>0.7||0.95<br>0.85|V|
|TJ=100°C<br>TJ=125°C<br>Maximum reverse current @ rated VR<br>TJ=25°C<br>~~a~~|IR<br>~~a~~|0.2<br>~~a~~<br>~~ee~~|||||0.1<br>~~a~~|||mA<br>~~a~~|
|||6<br>~~a~~<br>~~ee~~|||5<br>~~a~~<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~a~~<br>~~ee~~||||
|||-<br>~~a~~<br>~~ee~~|||-<br>~~a~~<br>~~ee~~<br>~~ee~~<br>~~ee~~||2<br>~~a~~<br>~~ee~~||||
|Voltage rate of change (Rated VR)<br>~~Pee~~|dV/dt<br>~~Pee~~<br>~~ee~~|10000<br>~~ee~~<br>~~Pee~~<br>~~ee~~||||||||V/μs<br>~~Pee~~<br>~~ee~~|
|Typical thermal resistance<br>~~ee~~|RθJL<br>RθJA<br>~~ee~~<br>~~ee~~|28<br>88<br>~~ee~~<br>~~ee~~||||||||°C/W<br>~~ee~~<br>~~ee~~|
|Operating junction temperature range<br>~~eee~~|TJ<br>~~ee~~<br>~~eee~~|- 55 to +125<br>~~eee~~|||- 55 to +150<br>~~ee~~<br>~~eee~~|||||°C<br>~~ee~~<br>~~eee~~|
|Storage temperature range<br>~~eee~~|TSTG<br>~~eee~~|- 55 to +150<br>~~eee~~||||||||°C<br>~~eee~~|



Note 1: Pulse test with PW=300μs, 1% duty cycle 

Document Number: DS_D1411020 

Version: P15 

**SS12 - SS115** 

Taiwan Semiconductor 

## ORDERING INFORMATION 

|ORDERING INFORMATION|ORDERING INFORMATION|ORDERING INFORMATION|ORDERING INFORMATION|ORDERING INFORMATION|ORDERING INFORMATION|
|---|---|---|---|---|---|
|PART NO.|PART NO.<br>SUFFIX|PACKING CODE|PACKING CODE<br>SUFFIX|PACKAGE|PACKING|
|SS1xx<br>(Note 1)|H|R3|G|SMA|1,800 / 7" Plastic reel|
|||R2||SMA|7,500 / 13" Paper reel|
|||M2||SMA|7,500 / 13" Plastic reel|
|||F3||Folded SMA|1,800 / 7" Plastic reel|
|||F2||Folded SMA|7,500 / 13" Paper reel|
|||F4||Folded SMA|7,500 / 13" Plastic reel|
||N/A|E3||Clip SMA|1,800 / 7" Plastic reel|
|||E2||Clip SMA|7,500 / 13" Plastic reel|



Note 1: "xx" defines voltage from 20V (SS12) to 150V (SS115) 

## EXAMPLE 

|EXAMPLE|EXAMPLE|EXAMPLE|EXAMPLE|EXAMPLE|EXAMPLE|
|---|---|---|---|---|---|
|PREFERRED<br>PART NO.|PART NO.|PART NO.<br>SUFFIX|PACKING CODE|PACKING CODE<br>SUFFIX|DESCRIPTION|
|SS16HR3G|SS16|H|R3|G|AEC-Q101 qualified<br>Green compound|



## RATINGS AND CHARACTERISTICS CURVES 

(TA=25°C unless otherwise noted) 

**==> picture [291 x 431] intentionally omitted <==**

**----- Start of picture text -----**<br>
FIG.1 FORWARD CURRENT DERATING CUURVE<br>1.2<br>1<br>0.8 SS15-SS115<br>SS12-SS14<br>0.6 e ee ) een<br>0.4 \<br>CC EA<br>0.2 RESISTIVE OR<br>INDUCTIVE LOAD<br>0 NA<br>50 60 70 80 90 100 110 120 130 140 150 160 170<br>LEAD TEMPERATURE ( [°] C)<br>FIG. 3 TYPICAL FORWARD CHARACTERISTICS<br>100<br>10<br>SS15-SS16<br>ny Ane 2S — eae<br>1<br>SS12-SS14 SS115<br>y<br>0.1<br>—— SS19-SS110<br>PP pp<br>a) 2 2 ee<br>0.01<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6<br>FORWARD VOLTAGE (V)<br>AVERAGE FORWARD CURRENT(A)<br>INSTANTANEOUS FORWARD CURRENT(A)<br>**----- End of picture text -----**<br>


**==> picture [279 x 429] intentionally omitted <==**

**----- Start of picture text -----**<br>
FIG. 2 MAXIMUM NON-REPETITIVE FORWARD<br>SURGE CURRENT<br>40<br>8.3ms Single Half Sine-Wave<br>30<br>20 LPLTS]LI!<br>10 A eRe<br>0 Sit<br>1 10 100<br>NUMBER OF CYCLES AT 60 Hz<br>FIG. 4 TYPICAL REVERSE CHARACTERISTICS<br>100<br>SS12-SS14<br>SS15-SS115<br>10 TJ=125 ° C<br>1<br>ee—<br>0.1 TJ=75 ° C<br>ee— | GK<br>0.01<br>TJ=25 ° C<br>$< er<br>0.001 — +ee—<br>0 20 40 60 80 100 120 140<br>PERCENT OF RATED PEAK REVERSE VOLTAGE.(%)<br>PEAK FORWARD SURGE CURRENT (A)<br>INSTANTANEOUS REVERSE CURRENT (mA)<br>**----- End of picture text -----**<br>


Document Number: DS_D1411020 

Version: P15 

**SS12 - SS115** Taiwan Semiconductor 

**==> picture [283 x 201] intentionally omitted <==**

**----- Start of picture text -----**<br>
FIG. 5 TYPICAL JUNCTION CAPACITANCE<br>1000<br>SS12-SS14<br>SS15-SS16<br>SS19-SS115<br>SS i<br>== inn<br>100 —_ ni<br>eel |<br>SS eae te<br>EH EE EP eT<br>f=1.0MHz<br>fy TT oNAN<br>Vslg=50mVp-p<br>TFPI<br>10<br>[LUA TET<br>0.1 1 10 100<br>REVERSE VOLTAGE (V)<br>CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**==> picture [221 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE<br>**----- End of picture text -----**<br>


**==> picture [297 x 186] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>a<br>10<br>ee<br>==aAe<br>1 Sf Pl<br>ALI TTI EH<br>ee eee<br>ee<br>0.1 Pn<br>0.01 0.1 1 10 100<br>T-PULSE DURATION(s)<br>IMPEDANCE (°C/W)<br>TRANSIENT THERMAL<br>**----- End of picture text -----**<br>


## PACKAGE OUTLINE DIMENSIONS 

## **DO-214AC (SMA)** 

|**Min**<br>**Max**<br>**Min**<br>**Max**<br>**DIM.**<br>**Unit (mm)**<br>**Unit (inch)**<br>~~es~~<br>=<br>~~eT~~|**Min**<br>**Max**<br>**Min**<br>**Max**<br>**DIM.**<br>**Unit (mm)**<br>**Unit (inch)**<br>~~es~~<br>=<br>~~eT~~|
|---|---|
|A<br>1.27<br>1.58<br>0.050<br>B<br>4.06<br>4.60<br>0.160<br>C<br>2.29<br>2.83<br>0.090<br>D<br>1.99<br>2.50<br>0.078<br>E<br>0.90<br>1.41<br>0.035<br>~~|a~~<br>~~a~~<br>~~a~~|0.062<br>0.181<br>0.111<br>0.098<br>0.056|
|F<br>4.95<br>5.33<br>0.195<br>~~a~~|0.210|
|G<br>0.10<br>0.20<br>0.004<br>~~Ha~~|0.008|
|H<br>0.15<br>0.31<br>0.006<br>~~_a~~<br>—1|0.012|



## SUGGESTED PAD LAYOUT 

|**Symbol**|**Unit (mm)**|**Unit (inch)**|
|---|---|---|
|A|1.68|0.066|
|B|1.52|0.060|
|C|3.93|0.155|
|D|2.41|0.095|
|E|5.45|0.215|



## MARKING DIAGRAM 

P/N = Specific Device Code G = Green Compound YW = Date Code F = Factory Code 

Document Number: DS_D1411020 

Version: P15 

**- SS12 SS115** Taiwan Semiconductor 

## Notice 

Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. 

Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. 

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 

Document Number: DS_D1411020 

Version: P15