# Dual MOSFET, N Channel, 40 V, 40 V, 100 A, 100 A, 3400 µohm

![Product image](https://novapart.co/image/farnell:2663703RL/)

**URL**: https://novapart.co/products/SQJQ904E-T1_GE3/dual-mosfet-n-channel-40-v-100-a-3400-ohm
**SKU**: SQJQ904E-T1_GE3
**Manufacturer**: VISHAY
**Category**: Semiconductors - Discretes || FETs || Dual MOSFETs
**Price**: €1.2700
**Stock**: 1000+
**Lead Time**: 260 days (indicative)

## Description

Transistor Polarity:Dual N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0034ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (04-Feb-2026) |
| No. Of Pins | 6Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Transistor Case Style | PowerPAK |
| Operating Temperature Max | 175°C |
| Power Dissipation N Channel | 135W |
| Power Dissipation P Channel | 135W |
| Drain Source Voltage Vds N Channel | 40V |
| Drain Source Voltage Vds P Channel | 40V |
| Continuous Drain Current Id N Channel | 100A |
| Continuous Drain Current Id P Channel | 100A |
| Drain Source On State Resistance N Channel | 3400µohm |
| Drain Source On State Resistance P Channel | 3400µohm |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2663703RL/)

**SQJQ904E** 

Vishay Siliconix 

www.vishay.com 

## **Automotive Dual N-Channel 40 V (D-S) 175 °C MOSFET** 

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PowerPAK [®]  8 x 8L Dual<br>7\ D1<br>D2<br>1<br>2 G1<br>3 S1<br>1 4 S2<br>G2<br>Top View Bottom View<br>8.1 mm<br>8 mm<br>**----- End of picture text -----**<br>


**PRODUCT SUMMARY** VDS (V) 40 RDS(on) (  ) at VGS = 10 V 0.0034 ID (A) per leg 100 Configuration Dual Package PowerPAK 8 x 8L ~~———~~ 

## **FEATURES** 

- TrenchFET[®] power MOSFET 

- AEC-Q101 qualified 

- 100 % Rg and UIS tested 

- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 

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D1 D2<br>G1 G2<br>S1 S2<br>N-Channel MOSFET N-Channel MOSFET<br>; ;<br>**----- End of picture text -----**<br>


## ~~a~~ 

**ABSOLUTE MAXIMUM RATINGS** (TC = 25 °C, unless otherwise noted) 

**PARAMETER SYMBOL LIMIT UNIT** ~~Ce~~ Drain-source voltage VDS 40 V ~~**a**~~ Gate-source voltage VGS ± 20 TC = 25 °Ca 100 Continuous drain current ID ~~a~~ TC = 125 °C 64 ~~a~~ Continuous source current (diode conduction)[ a] IS 100 A ~~a~~ Pulsed drain current[b] IDM 300 ~~—~~ Single pulse avalanche current L = 0.1 mH ~~ee~~ IAS 50 ~~a~~ Single pulse avalanche energy EAS 125 mJ TC = 25 °C 75 Maximum power dissipation[b] PD W ~~Aa~~ TC = 125 °C ~~SO—~~ 25 ~~ee~~ Operating junction and storage temperature range TJ, Tstg -55 to +175 °C ~~ff~~ Soldering recommendations (peak temperature)[d, e] 260 

|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|
|---|---|---|---|---|
|**PARAMETER**||**SYMBOL**|**LIMIT**|**UNIT**|
|Junction-to-ambient|PCB mountc|RthJA|85|°C/W|
|Junction-to-case (drain)||RthJC|2||



## **Notes** 

a. Package limited. 

b. Pulse test; pulse width  300 μs, duty cycle  2 %. 

- c. When mounted on 1" square PCB (FR4 material). 

d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 8 x 8L is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. 

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. 

S17-0256-Rev. A, 20-Feb-17 

Document Number: 68442 

**1** 

For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**SQJQ904E** 

Vishay Siliconix 

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www.vishay.com 

|**SPECIFICATIONS** (TC= 25 °C,unless otherwise noted)|**SPECIFICATIONS** (TC= 25 °C,unless otherwise noted)|**SPECIFICATIONS** (TC= 25 °C,unless otherwise noted)|**SPECIFICATIONS** (TC= 25 °C,unless otherwise noted)|||||
|---|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**MIN.**|**TYP.**|**MAX.**|**UNIT**|
|**Static**||||||||
|Drain-source breakdown voltage|VDS|VGS= 0, ID= 250 μA||40|-|-|V|
|Gate-source threshold voltage|VGS(th)|VDS= VGS, ID= 250 μA||2.5|3|3.5||
|Gate-source leakage|IGSS|VDS= 0 V, VGS= ± 20 V||-|-|± 100|nA|
|Zero gate voltage drain current|IDSS|VGS= 0 V|VDS= 20 V|-|-|1|μA|
|||VGS= 0 V|VDS= 40 V, TJ= 125 °C|-|-|50||
|||VGS= 0 V|VDS= 40 V, TJ= 175 °C|-|-|150||
|On-state drain currenta|ID(on)|VGS= 10 V|VDS 5 V|40|-|-|A|
|Drain-source on-state resistancea|RDS(on)|VGS= 10 V|ID= 20 A|-|0.0029|0.0034||
|||VGS= 10 V|ID= 20 A, TJ= 125 °C|-|-|0.0074||
|||VGS= 10 V|ID= 20 A, TJ= 175 °C|-|-|0.0091||
|Forward transconductanceb|gfs|VDS= 15 V, ID= 15 A||-|80|-|S|
|**Dynamicb**||||||||
|Input capacitance|Ciss|VGS= 0 V|VDS= 20 V, f = 1 MHz|-|4530|5900|pF|
|Output capacitance|Coss|||-|2750|3300||
|Reverse transfer capacitance|Crss|||-|168|220||
|Total gate chargec|Qg|VGS= 10 V|VDS= 20 V, ID= 40 A|-|60|75|nC|
|Gate-source chargec|Qgs|||-|16|-||
|Gate-drain chargec|Qgd|||-|5|-||
|Gate resistance|Rg|f = 1 MHz||0.5|1|2||
|Turn-on delay timec|td(on)|VDD= 20 V, RL= 0.5<br>ID 40 A, VGEN= 10 V, Rg= 1||-|15.5|20|ns|
|Rise timec|tr|||-|4.6|6.2||
|Turn-off delay timec|td(off)|||-|30|38||
|Fall timec|tf|||-|4|7||
|**Source-Drain Diode Ratings and Characteristicsb**||||||||
|Pulsed currenta|ISM|||-|-|200|A|
|Forward voltage|VSD|IF= 40 A, VGS= 0||-|1|1.5|V|



## **Notes** 

a. Pulse test; pulse width  300 μs, duty cycle  2 %. 

b. Guaranteed by design, not subject to production testing. 

c. Independent of operating temperature. 

_Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability._ 

S17-0256-Rev. A, 20-Feb-17 

Document Number: 68442 

**2** 

For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**SQJQ904E** 

Vishay Siliconix 

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www.vishay.com<br>**----- End of picture text -----**<br>


## **TYPICAL CHARACTERISTICS** (TA = 25 °C, unless otherwise noted) 

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Axis Title<br>150 10000<br>120<br>VGS = 10 V thru 5 V<br>1000<br>90<br>60<br>100<br>30<br>VGS = 4 V<br>0 10<br>0 6 12 18 24 30<br>VDS - Drain-to-Source Voltage (V)<br>2nd line<br>2nd line 1st line 2nd line<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


## **Output Characteristics** 

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Axis Title<br>80 10000<br>64<br>1000<br>48<br>TC = 25 °C<br>32<br>100<br>16<br>TC = 125 °C<br>TC = -55 °C<br>0 10<br>0 2 4 6 8 10<br>VGS - Gate-to-Source Voltage (V)<br>2nd line<br>2nd line 1st line 2nd line<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


**Transfer Characteristics** 

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Axis Title<br>120 10000<br>TC = -55 °C<br>100<br>80 TC = 25 °C 1000<br>60<br>40 100<br>TC = 125 °C<br>20<br>0 10<br>0 3 6 9 12 15<br>ID - Drain Current (A)<br>2nd line<br>2nd line 1st line 2nd line<br> - Transconductance (S)<br>fs<br>g<br>**----- End of picture text -----**<br>


**Transconductance** 

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Axis Title<br>0.010 10000<br>0.008<br>1000<br>0.006<br>0.004<br>VGS = 4.5 V 100<br>0.002<br>VGS = 10 V<br>0.000 10<br>0 20 40 60 80 100 120<br>ID - Drain Current (A)<br>2nd line<br>2nd line 1st line 2nd line<br> - On-Resistance (Ω)<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**On-Resistance vs. Drain Current** 

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Axis Title<br>10 10000<br>8<br>1000<br>6<br>4 TC = 25 °C<br>100<br>2<br>TC = 125 °C TC = -55 °C<br>0 10<br>0 2 4 6 8 10<br>VGS - Gate-to-Source Voltage (V)<br>2nd line<br>2nd line 1st line 2nd line<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


**Transfer Characteristics** 

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Axis Title<br>10 10000<br>ID = 15 A<br>8 V DS  = 20 V<br>1000<br>6<br>4<br>100<br>2<br>0 10<br>0 20 40 60 80 100<br>Qg - Total Gate Charge (nC)<br>2nd line<br>2nd line 1st line 2nd line<br> - Gate-to-Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


## **Gate Charge** 

Document Number: 68442 

S17-0256-Rev. A, 20-Feb-17 

**3** 

For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**SQJQ904E** 

Vishay Siliconix 

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## **TYPICAL CHARACTERISTICS** (TA = 25 °C, unless otherwise noted) 

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Axis Title<br>2.0 10000<br>ID = 10 A<br>1.7<br>VGS = 10 V<br>1000<br>1.4<br>1.1<br>VGS = 7 V 100<br>0.8<br>0.5 10<br>-50 -25 0 25 50 75 100 125 150 175<br>TJ - Junction Temperature (°C)<br>2nd line<br>2nd line 1st line 2nd line<br> - On-Resistance (Normalized)<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


## **On-Resistance vs. Junction Temperature** 

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Axis Title<br>100 10000<br>10<br>1 TJ = 150 °C TJ = 25 °C 1000<br>0.1<br>100<br>0.01<br>0.001 10<br>0 0.2 0.4 0.6 0.8 1.0 1.2<br>VSD - Source-to-Drain Voltage (V)<br>2nd line<br>2nd line 1st line 2nd line<br> - Source Current (A)<br>IS<br>**----- End of picture text -----**<br>


## **Source Drain Diode Forward Voltage** 

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Axis Title Axis Title<br>0.015 10000 0.5 10000<br>0.012 0.1<br>1000 ID = 5 mA 1000<br>0.009 -0.3<br>0.006 TJ = 150 °C -0.7<br>100 100<br>ID = 250 μA<br>0.003 -1.1<br>TJ = 25 °C<br>0.000 10 -1.5 10<br>0 2 4 6 8 10 -50 -25 0 25 50 75 100 125 150 175<br>VGS - Gate-to-Source Voltage (V) TJ - Temperature (°C)<br>2nd line 2nd line<br>2nd line 1st line 2nd line 2nd line  Variance (V) 1st line 2nd line<br> - On-Resistance (Ω) GS(th)<br>DS(on) V<br>R<br>**----- End of picture text -----**<br>


**On-Resistance vs. Gate-to-Source Voltage** 

**Threshold Voltage** 

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Axis Title<br>55 10000<br>ID = 1 mA<br>51<br>1000<br>47<br>43<br>100<br>39<br>35 10<br>-50 -25 0 25 50 75 100 125 150 175<br>TJ - Junction Temperature (°C)<br>2nd line<br>2nd line 1st line 2nd line<br> - Drain-to-Source Voltage (V)<br>DS<br>V<br>**----- End of picture text -----**<br>


**Drain Source Breakdown vs. Junction Temperature** 

S17-0256-Rev. A, 20-Feb-17 

Document Number: 68442 

**4** For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**SQJQ904E** 

Vishay Siliconix 

**==> picture [59 x 48] intentionally omitted <==**

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**THERMAL RATINGS** (TA = 25 °C, unless otherwise noted) 

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1000<br>I DM Limited<br>100<br>1 m s<br>10 ms<br>10 ID Limited 100 ms<br>Limited by RDS(on) * 1 s, 10 s, DC<br>1<br>TC = 25 °C BVDSS Limited<br>0.1 Single Pulse<br>0.01<br>0.01 0.1 1 10 100<br>VDS - Drain-to-Source Voltage (V)<br>* VGS > minimum VGS at which RDS(on) is specified<br>Safe Operating Area<br>1<br>Duty cycle = 0.5<br>Notes:<br>0.2<br>PDM<br>0.1<br>0.1<br>0.02 0.05 1. Duty cycle, D =  2. Per unit base = R t1 t 2 t t12thJA = 65 °C/W<br>Single pulse 3. T JM - T A = P DM Z thJA (t)<br>4. Surface mounted<br>0.01<br>0.0001 0.001 0.01 0.1 1 10 100 1000<br>Square Wave Pulse Duration (s)<br> - Drain Current (A)<br>ID<br>Thermal Impedance<br>Normalized Effective Transient<br>**----- End of picture text -----**<br>


**Normalized Thermal Transient Impedance, Junction-to-Ambient** 

S17-0256-Rev. A, 20-Feb-17 

Document Number: 68442 

**5** For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**SQJQ904E** 

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www.vishay.com<br>**----- End of picture text -----**<br>


Vishay Siliconix 

**THERMAL RATINGS** (TA = 25 °C, unless otherwise noted) 

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1<br>Duty cycle = 0.5<br>0.2<br>0.1<br>0.1 0.05<br>Single pulse<br>0.02<br>0.01<br>0.0001 0.001 0.01 0.1 1 10<br>Square Wave Pulse Duration (s)<br>Thermal Impedance<br>Normalized Effective Transient<br>**----- End of picture text -----**<br>


## **Normalized Thermal Transient Impedance, Junction-to-Case** 

## **Note** 

- The characteristics shown in the two graphs 

   - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) 

   - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) 

   - are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. 

_Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68442._ 

S17-0256-Rev. A, 20-Feb-17 

Document Number: 68442 

**6** 

For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Package Information** Vishay Siliconix 

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## **PowerPAK[®] 8 x 8L Case Outline** 

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D2<br>b2 D5 D6 D6 D5<br>A2 D4<br>A 1<br>b b1 e θ<br>D1<br>D Bottom view (single)<br>0.25 Gauge line<br>Top view (single)<br>D3 K D3<br>b2<br>D7 D5 D5 D7<br>K D5 D5<br>D4<br>b b1 e<br>D1<br>D Bottom view (dual)<br>Top view (dual)<br>E5<br>W3 W2 W1 W4 E4 E2 E3<br>W<br>E1 E<br>L L1<br>F<br>E5<br>1<br>W W4<br>W3 W2 E4 E2 E3<br>E1 E<br>A3<br>C A<br>**----- End of picture text -----**<br>


|**DIM.**|**MILLIMETERS**|**MILLIMETERS**|**MILLIMETERS**|**INCHES**|**INCHES**|**INCHES**|
|---|---|---|---|---|---|---|
||**MIN.**|**NOM.**|**MAX.**|**MIN.**|**NOM.**|**MAX.**|
|A|1.70|1.80|1.90|0.067|0.071|0.075|
|A1|0.00|0.08|0.13|0.000|0.003|0.005|
|A2|0.25|0.30|0.35|0.010|0.012|0.014|
|A3|0.55|0.62|0.70|0.022|0.024|0.028|
|b|0.92|1.00|1.08|0.036|0.039|0.043|
|b1|1.02|1.10|1.18|0.040|0.043|0.046|
|b2|7.80|7.90|8.00|0.307|0.311|0.315|
|c|0.20|0.25|0.30|0.008|0.010|0.012|
|D|8.00|8.10|8.25|0.315|0.319|0.325|
|D1|7.80|7.90|8.00|0.307|0.311|0.315|
|D2|6.70|6.80|6.90|0.264|0.268|0.272|
|D3|2.85|2.95|3.05|0.112|0.116|0.120|
|D4|6.11|6.21|6.31|0.241|0.244|0.248|
|D5|0.37|0.47|0.57|0.015|0.019|0.022|
|D6|2.49|2.59|2.69|0.098|0.102|0.106|
|D7|1.76|1.86|1.96|0.069|0.073|0.077|



Revision: 16-Oct-17 

**1** 

Document Number: 67734 

For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Package Information** 

Vishay Siliconix 

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|**DIM.**|**MILLIMETERS**|**MILLIMETERS**|**MILLIMETERS**|**INCHES**|**INCHES**|**INCHES**|
|---|---|---|---|---|---|---|
||**MIN.**|**NOM.**|**MAX.**|**MIN.**|**NOM.**|**MAX.**|
|e|1.95|2.00|2.05|0.077|0.079|0.081|
|E|7.90|8.00|8.10|0.311|0.315|0.319|
|E1|6.12|6.22|6.32|0.241|0.245|0.249|
|E2|3.94|4.04|4.14|0.140|0.159|0.163|
|E3|4.69|4.79|4.89|0.185|0.189|0.193|
|E4|3.23|3.33|3.43|0.127|0.131|0.135|
|E5|0.65|0.75|0.85|0.026|0.030|0.033|
|F|0.00|0.10|0.15|0.000|0.004|0.006|
|L|0.62|0.72|0.82|0.024|0.028|0.032|
|L1|0.92|1.07|1.22|0.036|0.042|0.048|
|K|0.80|0.90|1.00|0.031|0.035|0.039|
|W|0.30|0.40|0.50|0.012|0.016|0.020|
|W1|0.30|0.40|0.50|0.012|0.016|0.020|
|W2|4.39|4.49|4.59|0.173|0.177|0.181|
|W3|4.54|4.64|4.74|0.179|0.183|0.187|
|W4|0.32|0.37|0.42|0.013|0.015|0.017|
||6°|10°|14°|6°|10°|14°|
|C17-1388-Rev. B, 16-Oct-17<br>DWG: 6026|||||||
||||||||



Revision: 16-Oct-17 

Document Number: 67734 

**2** 

For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**PAD Pattern** 

www.vishay.com 

Vishay Siliconix 

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## **Recommended Minimum PADs for PowerPAK[®] 8 x 8L Dual** 

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**----- Start of picture text -----**<br>
8.00<br>(0.31) 0.50<br>4.05 (0.02)<br>(0.16)<br>3.55 6.90<br>(0.14) (0.27)<br>3.05 3.05<br>(0.12) (0.12)<br>0.80 Y<br>(0.03)<br>0.44 (0, 0)<br>(0.02)<br>X<br>0.54<br>(0.02)<br>6.11 0.85<br>1.29 (0.24) (0.03)<br>(0.05) 8.25<br>(0.32)<br>3.23<br>(0.13) 0.82<br>4.05 (0.03)<br>(0.16)<br>2.03 1.15<br>(0.08) (0.05)<br>0.88<br>(0.03)<br>Dimensions in millimeters (inches)<br>3.99 (0.16)<br>4.59 (0.18)<br>1.94 (0.08)<br>3.62 (0.14) 2.47 (0.10)<br>**----- End of picture text -----**<br>


## **Note** 

- Linear dimensions are in black, the same information is provided in ordinate dimensions which are in blue. 

Revision: 08-Apr-15 

Document Number: 67489 

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Legal Disclaimer Notice** Vishay 

www.vishay.com 

## **Disclaimer** 

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product.  To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. 

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications.  Such statements are not binding statements about the suitability of products for a particular application.  It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time.  All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts.  Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. 

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. 

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.  Product names and markings noted herein may be trademarks of their respective owners. 

_**© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED**_ 

Revision: 01-Jan-2021 

Document Number: 91000 

**1** 



## Links

- [View this product on Novapart](https://novapart.co/products/SQJQ904E-T1_GE3/dual-mosfet-n-channel-40-v-100-a-3400-ohm)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/vishay/sqjq904e-t1-ge3/mosfet-dual-n-ch-40v-100a-powerpak/dp/2663703RL)
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