# Power MOSFET, N Channel, 40 V, 460 A, 1240 µohm, PowerPAK, Surface Mount

![Product image](https://novapart.co/image/farnell:3586059/)

**URL**: https://novapart.co/products/SQJQ142E-T1_GE3/power-mosfet-n-channel-40-v-460-a-1240-ohm
**SKU**: SQJQ142E-T1_GE3
**Manufacturer**: VISHAY
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.9220
**Stock**: 500+
**Lead Time**: 288 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | TrenchFET Gen IV |
| Qualification | AEC-Q101 |
| Power Dissipation | 500W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | PowerPAK |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 460A |
| Drain Source On State Resistance | 1240µohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3586059/)

**SQJQ142E** 

Vishay Siliconix 

www.vishay.com 

## **Automotive N-Channel 40 V (D-S) 175 °C MOSFET** 

## **FEATURES** 

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**----- Start of picture text -----**<br>
PowerPAK [®]  8 x 8L<br>• TrenchFET [®]  Gen IV power MOSFET<br>• AEC-Q101 qualified<br>D • 100 % Rg and UIS tested<br>• Thin 1.6 mm package<br>G • Very low thermal resistance<br>S S 1<br>AF S a S 2 • Material categorization:<br>S S 3 for definitions of compliance please see<br>> G [o>] 4 www.vishay.com/doc?99912<br>1 D<br>“aea 7 a<br>Top View Bottom View<br>PRODUCT SUMMARY<br>VDS (V) 40 G<br>RDS(on) (  ) at VGS = 10 V  0.00124<br>ID (A) 460<br>Configuration Single<br>S<br>Package PowerPAK 8 x 8L<br>Oo N-Channel MOSFET ~<br>7.9 mm<br>8 mm<br>**----- End of picture text -----**<br>


|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C, unless otherwise noted)|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C, unless otherwise noted)|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C, unless otherwise noted)|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C, unless otherwise noted)|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C, unless otherwise noted)|
|---|---|---|---|---|
|**PARAMETER**<br>~~GO~~||**SYMBOL**<br>~~GO~~|**LIMIT**<br>~~GO~~|**UNIT**<br>~~GO~~|
|Drain-source voltage<br>~~GO~~<br>~~ee~~<br>~~a~~||VDS<br>~~GO~~<br>~~ee~~|40<br>~~GO~~<br>~~ee~~|V<br>~~GO~~|
|Gate-source voltage<br>~~a~~<br>~~ee~~<br>~~SO~~||VGS<br>~~SO~~|± 20||
|Continuous drain current<br>~~a~~<br>~~ee~~<br>~~|~~|TC= 25 °C<br>~~SO~~<br>~~|~~|ID<br>~~SO~~<br>~~|~~|460<br>~~|~~|A<br>~~es~~|
||TC= 125 °C<br>~~SO~~<br>~~|~~||265<br>~~|~~||
|Continuous source current (diode conduction)<br>~~ee~~<br>~~SO~~<br>~~|~~<br>~~a~~||IS<br>~~SO~~<br>~~|~~<br>~~a~~|450<br>~~|~~<br>~~a~~||
|Pulsed drain currentb<br>~~GO~~<br>~~Po~~||IDM<br>~~GO~~<br>~~ee~~|900<br>~~GO~~<br>~~ee~~||
|Single pulse avalanche current<br>~~Po~~<br>~~PO~~|L = 0.1 mH|IAS<br>~~ee~~<br>~~es~~|48<br>~~ee~~<br>~~es~~||
|Single pulse avalanche energy<br>~~Po~~<br>~~PO~~||EAS<br>~~ee~~<br>~~es~~|115.2<br>~~ee~~<br>~~es~~|mJ<br>~~es~~|
|Maximum power dissipation<br>~~PO~~<br>~~SO~~<br>~~|~~<br>~~a~~|TC= 25 °C<br>~~SO~~<br>~~|~~|PD<br>~~es~~<br>~~SO~~<br>~~|~~|500<br>~~es~~<br>~~SO~~<br>~~|~~|W<br>~~es~~<br>~~SO~~|
||TC= 125 °C<br>~~SO~~<br>~~|~~||166<br>~~SO~~<br>~~|~~||
|Operatingjunction and storage temperature range<br>~~|~~<br>~~a~~<br>~~a~~||TJ, Tstg<br>~~|~~|-55 to +175<br>~~|~~|°C|
|Solderingrecommendations (peak temperature)d<br>~~|~~<br>~~a~~<br>~~a~~||~~|~~|260<br>~~|~~||



## **THERMAL RESISTANCE RATINGS** 

|**PARAMETER**||**SYMBOL**|**LIMIT**|**UNIT**|
|---|---|---|---|---|
|Junction-to-ambient|PCB mountc|RthJA|44|°C/W|
|Junction-to-case (drain)||RthJC|0.3||



## **Notes** 

- a. Package limited 

- b. Pulse test; pulse width  300 μs, duty cycle  2 % 

- c. When mounted on 1" square PCB (FR4 material) 

d. See solder profile (www.vishay.com/doc?73257). The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection 

S19-1027-Rev. A, 02-Dec-2019 

Document Number: 77320 

**1** 

For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**SQJQ142E** 

www.vishay.com 

Vishay Siliconix 

**==> picture [59 x 48] intentionally omitted <==**

|**SPECIFICATIONS** (TC= 25 °C,unless otherwise noted)|**SPECIFICATIONS** (TC= 25 °C,unless otherwise noted)|**SPECIFICATIONS** (TC= 25 °C,unless otherwise noted)|**SPECIFICATIONS** (TC= 25 °C,unless otherwise noted)|||||
|---|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**MIN.**|**TYP.**|**MAX.**|**UNIT**|
|**Static**||||||||
|Drain-source breakdown voltage|VDS|VGS= 0, ID= 250 μA||40|-|-|V|
|Gate-source threshold voltage|VGS(th)|VDS= VGS, ID= 250 μA||2|3|3.5||
|Gate-source leakage|IGSS|VDS= 0 V, VGS= ± 20 V||-|-|± 100|nA|
|Zero gate voltage drain current|IDSS|VGS= 0 V|VDS= 40 V|-|-|1|μA|
|||VGS= 0 V|VDS= 40 V, TJ= 125 °C|-|-|200||
|||VGS= 0 V|VDS= 40 V, TJ= 175 °C|-|-|330||
|On-state drain currenta|ID(on)|VGS= 10 V|VDS 5 V|100|-|-|A|
|Drain-source on-state resistancea|RDS(on)|VGS= 10 V|ID= 20 A|-|0.00100|0.00124||
|||VGS= 10 V|ID= 20 A, TJ= 125 °C|-|-|0.00200||
|||VGS= 10 V|ID= 20 A, TJ= 175 °C|-|-|0.00240||
|Forward transconductanceb|gfs|VDS= 15 V, ID= 60 A||-|150|-|S|
|**Dynamic b**||||||||
|Input capacitance|Ciss|VGS= 0 V|VDS= 25 V, f = 1 MHz|-|5360|6975|pF|
|Output capacitance|Coss|||-|2070|2700||
|Reverse transfer capacitance|Crss|||-|167|215||
|Totalgate chargec|Qg|VGS= 10 V|VDS= 20 V, ID= 20 A|-|92|130|nC|
|Gate-source chargec|Qgs|||-|26|-||
|Gate-drain chargec|Qgd|||-|20.1|-||
|Gate resistance|Rg|f = 1 MHz||0.65|1.59|2.56||
|Turn-on delay timec|td(on)|VDD= 20 V, RL= 1<br>ID 20 A, VGEN= 10 V, Rg= 1||-|18.5|26|ns|
|Rise timec|tr|||-|18|25||
|Turn-off delay timec|td(off)|||-|37|52||
|Fall timec|tf|||-|14|20||
|**Source-Drain Diode Ratings and Characteristicsb**||||||||
|Reverse recovery time|trr|VDD= 32 V, IFM= 15 A,<br>di/dt = 100 A/μs||-|59|-|ns|
|Reverse recovery charge|Qrr|||-|69|-|nC|
|Reverse recovery current|IRM|||-|2|3.2|A|
|Pulsed currenta|ISM|||-|-|900|A|
|Forward voltage|VSD|IF= 50 A, VGS= 0||-|0.8|1.1|V|



## **Notes** 

a. Pulse test; pulse width  300 μs, duty cycle  2 % 

b. Guaranteed by design, not subject to production testing 

c. Independent of operating temperature 

_Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability._ 

S19-1027-Rev. A, 02-Dec-2019 

Document Number: 77320 

**2** 

For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**SQJQ142E** 

Vishay Siliconix 

**==> picture [59 x 48] intentionally omitted <==**

**==> picture [77 x 10] intentionally omitted <==**

**----- Start of picture text -----**<br>
www.vishay.com<br>**----- End of picture text -----**<br>


## **TYPICAL CHARACTERISTICS** (TA = 25 °C, unless otherwise noted) 

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**----- Start of picture text -----**<br>
Axis Title<br>300 10000<br>VGS = 10 V thru 6 V<br>240<br>VGS = 5 V 1000<br>180<br>120<br>100<br>60<br>VGS = 4 V<br>0 10<br>0 2 4 6 8 10<br>VDS - Drain-to-Source Voltage (V)<br>Output Characteristics<br>Axis Title<br>10000<br>160<br>120 1000<br>80<br>100<br>TC = 25 °C<br>40<br>TC = 125 °C TC = -55 °C<br>0 10<br>0 2 4 6 8 10<br>VGS - Gate-to-Source Voltage (V)<br>2nd line 1st line 2nd line<br> - Drain Current (A)<br>ID<br>2nd line 1st line 2nd line<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


## **Transfer Characteristics** 

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Axis Title<br>0.006 10000<br>0.005<br>0.004 1000<br>0.003<br>0.002 100<br>VGS = 7.5 V<br>0.001<br>VGS = 10 V<br>0.000 10<br>0 20 40 60 80 100<br>ID - Drain Current (A)<br>On-Resistance vs. Drain Current<br>2nd line<br>1st line 2nd line<br> - On-Resistance (Ω)<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
200<br>TC = -55 °C<br>160<br>TC = 25 °C<br>120<br>TC = 125 °C<br>80<br>40<br>0<br>0 20 40 60 80 100<br>ID - Drain Current (A)<br>2nd line<br> - Transconductance (S)<br>fs<br>g<br>**----- End of picture text -----**<br>


## **Transconductance** 

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Axis Title<br>100 000 10000<br>10 000 Ciss<br>1000<br>1000 Coss<br>C rss<br>100<br>100<br>10<br>1 10<br>0 8 16 24 32 40<br>VDS - Drain-to-Source Voltage (V)<br>Capacitance<br>Axis Title<br>10 10000<br>ID = 20 A<br>8 V DS = 20 V<br>1000<br>6<br>4<br>100<br>2<br>0 10<br>0 20 40 60 80 100<br>Qg - Total Gate Charge (nC)<br>Gate Charge<br>2nd line 1st line 2ndline<br>C - Capacitance (pF)<br>2nd line 1st line 2nd line<br> - Gate-to-Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


S19-1027-Rev. A, 02-Dec-2019 

Document Number: 77320 

**3** 

For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**SQJQ142E** 

Vishay Siliconix 

**==> picture [59 x 48] intentionally omitted <==**

**==> picture [77 x 10] intentionally omitted <==**

**----- Start of picture text -----**<br>
www.vishay.com<br>**----- End of picture text -----**<br>


## **TYPICAL CHARACTERISTICS** (TA = 25 °C, unless otherwise noted) 

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**----- Start of picture text -----**<br>
Axis Title<br>56 10000<br>ID = 1 mA<br>55<br>54 1000<br>53<br>52 100<br>51<br>50 10<br>-50 -25 0 25 50 75 100 125 150 175<br>TJ - Junction Temperature (°C)<br>2nd line 1st line 2nd line<br> - Drain-to-Source Voltage (V)<br>DS<br>V<br>**----- End of picture text -----**<br>


## **Drain Source Breakdown vs. Junction Temperature** 

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**----- Start of picture text -----**<br>
Axis Title<br>0.006 10000<br>0.005<br>0.004 1000<br>0.003<br>0.002 T J = 150 °C 100<br>0.001<br>TJ = 125 °C TJ = 25 °C<br>0.000 10<br>2 4 6 8 10<br>VGS - Gate-to-Source Voltage (V)<br>2nd line 1st line 2nd line<br> - On-Resistance (Ω)<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**On-Resistance vs. Gate-to-Source Voltage** 

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**----- Start of picture text -----**<br>
Axis Title<br>2.1 10000<br>ID = 10 A<br>1.7<br>VGS = 10 V 1000<br>1.3<br>VGS = 7.5 V<br>100<br>0.9<br>0.5 10<br>-50 -25 0 25 50 75 100 125 150 175<br>TJ - Junction Temperature (°C)<br>2nd line 1st line 2nd line<br> - On-Resistance (Normalized)<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**On-Resistance vs. Junction Temperature** 

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**----- Start of picture text -----**<br>
Axis Title<br>0.5 10000<br>0.1<br>1000<br>-0.3<br>ID = 5 mA<br>-0.7<br>100<br>ID = 250 μA<br>-1.1<br>-1.5 10<br>-50 -25 0 25 50 75 100 125 150 175<br>TJ - Junction Temperature (°C)<br>2nd line  - Variance (V) 1st line 2nd line<br>GS(th)<br>V<br>**----- End of picture text -----**<br>


## **Threshold Voltage** 

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**----- Start of picture text -----**<br>
Axis Title<br>100 10000<br>10 TJ = 150 °C<br>1000<br>1<br>100<br>0.1<br>T J = 25 °C<br>0.01 10<br>0 0.2 0.4 0.6 0.8 1.0 1.2<br>VSD - Source-to-Drain Voltage (V)<br>2nd line 1st line 2nd line<br> - Source Current (A)<br>IS<br>**----- End of picture text -----**<br>


**Source Drain Diode Forward Voltage** 

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**----- Start of picture text -----**<br>
Axis Title<br>1000 10000<br>I DM  limited<br>100<br>1000<br>100 μs<br>10<br>Limited by R DS(on) a 1 ms100<br>1 10  ms<br>T C = 25  ° C, 10 0 ms<br>single pulse BVDSS limited 1  s, 10 s, DC<br>0.1 10<br>0.01 0.1 1 10 100<br>VDS - Drain-to-Source Voltage (V)<br>Safe Operating Area<br>1st line 2nd line<br>2nd line<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


## **Note** 

a. VGS > minimum VGS at which RDS(on) is specified 

S19-1027-Rev. A, 02-Dec-2019 

Document Number: 77320 

**4** 

For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**SQJQ142E** 

Vishay Siliconix 

**==> picture [59 x 48] intentionally omitted <==**

www.vishay.com 

## **THERMAL RATINGS** (TA = 25 °C, unless otherwise noted) 

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**----- Start of picture text -----**<br>
Axis Title<br>10000<br>1 Duty Cycle = 0.5<br>0.2<br>0.1 1000<br>0.1<br>0.05<br>0.02<br>100<br>0.01 Single pulse<br>0.001 10<br>0.0001 0.001 0.01 0.1 1 10<br>Square Wave Pulse Duration (s)<br>2nd line<br>Normalized Thermal Transient Impedance, Junction-to-Ambient<br>Axis Title<br>10000<br>1 Duty Cycle = 0.5<br>0.2<br>0.1<br>0.1 0.05 1000<br>0.02<br>0.01<br>100<br>0.001 Single pulse<br>0.0001 10<br>0.0001 0.001 0.01 0.1 1 10 100<br>Square Wave Pulse Duration (s)<br>2nd line<br>1st line 2nd line<br>Thermal Impedance<br>Normalized Effective Transient<br>1st line 2nd line<br>Thermal Impedance<br>Normalized Effective Transient<br>**----- End of picture text -----**<br>


## **Normalized Thermal Transient Impedance, Junction-to-Case** 

_Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?77320._ 

S19-1027-Rev. A, 02-Dec-2019 

Document Number: 77320 

**5** 

For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Legal Disclaimer Notice** Vishay 

www.vishay.com 

**==> picture [59 x 48] intentionally omitted <==**

## **Disclaimer** 

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product.  To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. 

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications.  Such statements are not binding statements about the suitability of products for a particular application.  It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time.  All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts.  Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. 

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. 

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.  Product names and markings noted herein may be trademarks of their respective owners. 

_**© 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED**_ 

Revision: 01-Jan-2019 

Document Number: 91000 

**1** 



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