Image not available
Illustrative purposes only
SQJB42EP-T1_GE3
Dual MOSFET, N Channel, 40 V, 40 V, 30 A, 30 A, 7900 µohm
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: VISHAY
- Product type:
- Transistor Polarity:Dual N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0079ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vg
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: TrenchFET Series
- Qualification: AEC-Q101
- Transistor Case Style: PowerSO
- Operating Temperature Max: 175°C
- Power Dissipation N Channel: 48W
- Power Dissipation P Channel: 48W
- Drain Source Voltage Vds N Channel: 40V
- Drain Source Voltage Vds P Channel: 40V
- Continuous Drain Current Id N Channel: 30A
- Continuous Drain Current Id P Channel: 30A
- Drain Source On State Resistance N Channel: 7900µohm
- Drain Source On State Resistance P Channel: 7900µohm
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.519 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
|
|---|
Updated at March 30, 2026