# Dual MOSFET, Dual N Channel, 60 V, 21 A, 0.0305 ohm ![Product image](https://novapart.co/image/farnell:4856011RL/) **URL**: https://novapart.co/products/SQJ768ELP-T1_GE3/dual-mosfet-n-channel-60-v-21-a-00305-ohm **SKU**: SQJ768ELP-T1_GE3 **Manufacturer**: VISHAY **Category**: Semiconductors - Discretes || FETs || Dual MOSFETs **Price**: €0.0700 **Stock**: 10+ **Lead Time**: 108 days (indicative) ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:4856011RL/) **SQJ768ELP** Vishay Siliconix www.vishay.com ## **Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFET** ## **FEATURES** **PowerPAK[®] SO-8L Dual BWL** • TrenchFET[®] power MOSFET • AEC-Q101 qualified D1 • 100 % Rg and UIS tested D2 • Material categorization: for definitions of 1 compliance please see 2 S1 www.vishay.com/doc?99912 3 G1 4 S2 1 G2 D1 D2 Top View Bottom View **PRODUCT SUMMARY** VDS (V) 60 G1 G2 RDS(on) (Ω) at VGS = 10 V 0.0305 RDS(on) (Ω) at VGS = 4.5 V 0.0350 ID (A) per leg[e] 21 S1 S2 ~~a~~ Configuration Dual N-Channel MOSFET N-Channel MOSFET **ORDERING INFORMATION** Package PowerPAK[®] SO-8L SQJ768ELP Lead (Pb)-free and halogen-free (for detailed order number please see www.vishay.com/doc?79771) ~~|~~ **ABSOLUTE MAXIMUM RATINGS** (TC = 25 °C, unless otherwise noted) ~~Pees~~ **PARAMETER SYMBOL LIMIT UNIT** Drain-source voltage VDS 60 V ~~eePee~~ Gate-source voltage VGS ± 20 ~~ee~~ TC = 25 °C[a] 21 Continuous drain current[e] ID ~~OE~~ TC = 125 °C 12 ~~rn~~ Continuous source current (diode conduction)[e] IS 21 A ~~|~~ Pulsed drain current[b, e] IDM 46 Single pulse avalanche current ~~|~~ L = 0.1 mH IAS ~~=e~~ 18 ~~SSPe~~ Single pulse avalanche energy ~~ee~~ EAS ~~oooen~~ 16 mJ TC = 25 °C 35 Maximum power dissipation[b, e] PD W TC = 125 °C 12 ~~CO | fF~~ Operating junction and storage temperature range TJ, Tstg -55 to +175 °C ~~SSI~~ Soldering recommendations (peak temperature) ~~ee~~ 260 ~~eee~~ **THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT** Junction-to-ambient PCB mount[c] RthJA 52 °C/W Junction-to-case (drain)[d] RthJC 4.3 ## **Notes** a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % b. When mounted on 1" square PCB (FR4 material) c. See solder profile (www.vishay.com/doc?73257) d. As per on JESD51-14 e. Values based on RthJC and TC of 25 °C. Actual values achievable will be dependent on the thermal characteristics of the complete system. S25-1304-Rev. A, 27-Oct-2025 Document Number: 61691 **1** For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **SQJ768ELP** Vishay Siliconix www.vishay.com |**SPECIFICATIONS**(TC= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TC= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TC= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TC= 25 °C,unless otherwise noted)||||| |---|---|---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**MIN.**|**TYP.**|**MAX.**|**UNIT**| |**Static**|||||||| |Drain-source breakdown voltage|VDS|VGS= 0 V, ID= 250 μA||60|-|-|V| |Gate-source threshold voltage|VGS(th)|VDS= VGS, ID= 250 μA||1.5|2.0|2.5|| |Gate-source leakage|IGSS|VDS= 0 V, VGS= ± 20 V||-|-|± 100|nA| |Zero gate voltage drain current|IDSS|VGS= 0 V|VDS= 60 V|-|-|1|μA| |||VGS= 0 V|VDS= 60 V, TJ= 125 °C|-|-|50|| |||VGS= 0 V|VDS= 60 V, TJ= 175 °C|-|-|150|| |On-state drain currenta|ID(on)|VGS= 10 V|VDS ≥5 V|10|-|-|A| |Drain-source on-state resistancea|RDS(on)|VGS= 10 V|ID= 15 A|-|0.0254|0.0305|Ω| |||VGS= 4.5 V||-|0.0282|0.0350|| |||VGS= 10 V|ID= 15 A, TJ= 125 °C|-|-|0.0620|| |||VGS= 10 V|ID= 15 A, TJ= 175 °C|-|-|0.0812|| |Forward transconductanceb|gfs|VDS= 15 V, ID= 30 A||-|50|-|S| |**Dynamicb**|||||||| |Input capacitance|Ciss|VGS= 0 V|VDS= 25 V, f = 1 MHz|-|939|1409|pF| |Output capacitance|Coss|||-|93|140|| |Reverse transfer capacitance|Crss|||-|35|70|| |Totalgate chargec|Qg|VGS= 10 V|VDS= 30 V, ID= 15 A|-|16|24|nC| |Gate-source chargec|Qgs|||-|4|-|| |Gate-drain chargec|Qgd|||-|3|-|| |Gate resistance|Rg|f = 1 MHz||1|2|3|Ω| |Turn-on delay timec|td(on)|VDD= 30 V, RL= 2Ω
ID ≅15 A, VGEN= 10 V, Rg= 1Ω||-|8|16|ns| |Rise timec|tr|||-|4|8|| |Turn-off delay timec|td(off)|||-|18|36|| |Fall timec|tf|||-|2|4|| |**Source-Drain Diode Ratings and Characteristicsb**|||||||| |Pulsed currenta|ISM|||-|-|46|A| |Forward voltage|VSD|IF= 7 A, VGS= 0 V||-|0.88|1.2|V| |Body diode reverse recovery time|trr|IF= 10 A, di/dt = 100A/us||-|22|44|ns| |Body diode reverse recovery charge|Qrr|||-|21|42|nC| |Reverse recovery fall time|ta|||-|18|-|ns| |Reverse recovery rise time|tb|||-|6|-|| |Body diode peak reverse recovery current|IRM(REC)|||-|-1.9|-|A| ## **Notes** f. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % g. Guaranteed by design, not subject to production testing h. Independent of operating temperature _Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability._ S25-1304-Rev. A, 27-Oct-2025 Document Number: 61691 **2** For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **SQJ768ELP** Vishay Siliconix **==> picture [77 x 10] intentionally omitted <==** **----- Start of picture text -----**
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## **TYPICAL CHARACTERISTICS** (TA = 25 °C, unless otherwise noted) **==> picture [193 x 371] intentionally omitted <==** **----- Start of picture text -----**
65
VGS = 10 V thru 4 V
52
39
26
VGS = 3 V
13
0
0 2 4 6 8 10
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Axis Title
50
40
30
TC = 25 °C
20
10
TC = 125 °C TC = -55 °C
0
0 1 2 3 4 5
VGS - Gate-to-Source Voltage (V)
- Drain Current (A)
ID
- Drain Current (A)
ID
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Transfer Characteristics
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70
TC = -55 °C
56
TC = 25 °C
42
TC = 125 °C
28
14
0
0 10 20 30 40 50
ID - Drain Current (A)
Transconductance
- Transconductance (S)
fs
g
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90 10000
TC = -55 °C
72
TC = 25 °C 1000
54
TC = 125 °C
36
100
18
0 10
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Axis Title
10 000 10000
Ciss
1000 1000
100 C oss 100
C rss
10 10
0 12 24 36 48 60
VDS - Drain-to-Source Voltage (V)
Capacitance
Axis Title
0.15 10000
0.12
1000
0.09
0.06
100
VGS = 4.5 V
0.03
VGS = 10 V
0 10
0 14 28 42 56 70
ID - Drain Current (A)
- Drain Current (A)
ID
C - Capacitance (pF)
- On-Resistance (Ω)
DS(on)
R
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On-Resistance vs. Drain Current
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S25-1304-Rev. A, 27-Oct-2025 Document Number: 61691 **3** For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **SQJ768ELP** Vishay Siliconix **==> picture [77 x 10] intentionally omitted <==** **----- Start of picture text -----**
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## **TYPICAL CHARACTERISTICS** (TA = 25 °C, unless otherwise noted) **==> picture [190 x 162] intentionally omitted <==** **----- Start of picture text -----**
10
8 IVDDS= 15 A = 30 V
6
4
2
0
0 4 8 12 16 20
Qg - Total Gate Charge (nC)
- Gate-to-Source Voltage (V)
GS
V
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## **Gate Charge** **==> picture [215 x 160] intentionally omitted <==** **----- Start of picture text -----**
3.0 10000
2.6 I D = 15 A
2.2 V GS = 10 V
1000
1.8
VGS = 4.5 V
1.4
100
1.0
0.6
0.2 10
-50 -25 0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
- On-Resistance (Normalized)
DS(on)
R
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**On-Resistance vs. Junction Temperature** **==> picture [193 x 161] intentionally omitted <==** **----- Start of picture text -----**
0.15
0.12
0.09
TJ = 150 °C
0.06
TJ = 125 °C
0.03
TJ = 25 °C
0
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
- On-Resistance (Ω)
DS(on)
R
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**On-Resistance vs. Gate-to-Source Voltage** **==> picture [215 x 582] intentionally omitted <==** **----- Start of picture text -----**
100 10000
10
TJ = 150 °C 1000
1
100
0.1
TJ = 25 °C
0.01 10
0 0.3 0.6 0.9 1.2
VSD - Source-to-Drain Voltage (V)
Source Drain Diode Forward Voltage
Axis Title
0.6 10000
0.3
0 1000
-0.3 ID = 5 mA
-0.6 100
ID = 250 μA
-0.9
-1.2 10
-50 -25 0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
Threshold Voltage
Axis Title
80 10000
78 I D = 1 mA
76
74
1000
72
70
68
66
100
64
62
60
58 10
-50 -25 0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
- Source Current (A)
IS
- Variance (V)
GS(th)
V
- Drain-to-Source Voltage (V)
DS
V
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**Drain Source Breakdown vs. Junction Temperature** S25-1304-Rev. A, 27-Oct-2025 Document Number: 61691 **4** For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **SQJ768ELP** Vishay Siliconix **==> picture [77 x 10] intentionally omitted <==** **----- Start of picture text -----**
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**THERMAL RATINGS** (TA = 25 °C, unless otherwise noted) **==> picture [439 x 356] intentionally omitted <==** **----- Start of picture text -----**
10000
1
Duty Cycle = 0.5
0.2 1000
0.1
0.1
0.05
0.02
100
0.01
Single pulse
0.001 10
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Ambient
Axis Title
10000
1
Duty Cycle = 0.5
1000
0.2
0.1 0.1
0.05 100
0.02
Single pulse
0.01 10
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00
Square Wave Pulse Duration (s)
1st line
Thermal Impedance
Normalized Effective Transient
Thermal Impedance
Normalized Effective Transient
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## **Normalized Thermal Transient Impedance, Junction-to-Case** ## **Note** - The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) - are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions _Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?61691._ S25-1304-Rev. A, 27-Oct-2025 Document Number: 61691 **5** For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Legal Disclaimer Notice** Vishay www.vishay.com ## **Disclaimer** ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. 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