Image not available
Illustrative purposes only
SQJ200EP-T1_GE3
Dual MOSFET, N Channel, 20 V, 20 V, 60 A, 60 A, 3100 µohm
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: VISHAY
- Product type: Dual MOSFETs
- Transistor Polarity:Dual N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.0031ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltag
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: TrenchFET Series
- Qualification: AEC-Q101
- Transistor Case Style: PowerPAK SO
- Operating Temperature Max: 175°C
- Power Dissipation N Channel: 48W
- Power Dissipation P Channel: 48W
- Drain Source Voltage Vds N Channel: 20V
- Drain Source Voltage Vds P Channel: 20V
- Continuous Drain Current Id N Channel: 60A
- Continuous Drain Current Id P Channel: 60A
- Drain Source On State Resistance N Channel: 3100µohm
- Drain Source On State Resistance P Channel: 3100µohm
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.469 € |
| Current stock | 1000+ |
| Lead time | 7 days |
Datasheet
|
|---|
Updated at March 22, 2026