# Power MOSFET, N Channel, 40 V, 50 A, 5600 µohm, TO-252AA, Surface Mount

![Product image](https://novapart.co/image/farnell:3929242/)

**URL**: https://novapart.co/products/SQD50N04-5M6L_GE3/power-mosfet-n-channel-40-v-50-a-5600-ohm-to-252aa
**SKU**: SQD50N04-5M6L_GE3
**Manufacturer**: VISHAY
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.5050
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Available until stocks are exhausted

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | To Be Advised |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | TrenchFET Series |
| Qualification | AEC-Q101 |
| Power Dissipation | 71W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252AA |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 50A |
| Drain Source On State Resistance | 5600µohm |
| Gate Source Threshold Voltage Max | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3929242/)

**SQD50N04-5m6L** 

www.vishay.com 

Vishay Siliconix 

## **Automotive N-Channel 40 V (D-S) 175 °C MOSFET** 

## **PRODUCT SUMMARY** 

|**PRODUCT SUMMARY**|**PRODUCT SUMMARY**|
|---|---|
|VDS(V)|40|
|RDS(on)() at VGS= 10 V|0.0056|
|RDS(on)() at VGS= 4.5 V|0.0070|
|ID(A)|50|
|Configuration|Single|
|Package|TO-252|



## **FEATURES** 

- TrenchFET[®] power MOSFET 

- Package with low thermal resistance 

- AEC-Q101 qualified 

- 100 % Rg and UIS tested 

- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 

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TO-252<br>Drain connected to tab<br>a<br>S<br>D<br>G<br>Top View<br>**----- End of picture text -----**<br>


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D<br>G<br>N-Channel MOSFET<br>S<br>**----- End of picture text -----**<br>


|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C,unless otherwise noted)|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C,unless otherwise noted)|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C,unless otherwise noted)|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C,unless otherwise noted)|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C,unless otherwise noted)|
|---|---|---|---|---|
|**PARAMETER**||**SYMBOL**|**LIMIT**|**UNIT**|
|Drain-Source Voltage||VDS|40|V|
|Gate-Source Voltage||VGS|± 20||
|Continuous Drain Current|TC= 25 °Ca|ID|50|A|
||TC= 125 °C||45||
|Continuous Source Current (Diode Conduction)a||IS|50||
|Pulsed Drain Currentb||IDM|200||
|Single Pulse Avalanche Current|L = 0.1 mH|IAS|33||
|Single Pulse Avalanche Energy||EAS|54|mJ|
|Maximum Power Dissipationb|TC= 25 °C|PD|71|W|
||TC= 125 °C||23||
|Operating Junction and Storage Temperature Range||TJ, Tstg|-55 to +175|°C|



## **THERMAL RESISTANCE RATINGS** 

|**PARAMETER**||**SYMBOL**|**LIMIT**|**UNIT**|
|---|---|---|---|---|
|Junction-to-Ambient|PCB Mountc|RthJA|50|°C/W|
|Junction-to-Case (Drain)||RthJC|2.1||



## **Notes** 

a. Package limited. 

b. Pulse test; pulse width  300 μs, duty cycle  2 %. 

c. When mounted on 1" square PCB (FR4 material). 

S15-2665-Rev. A, 09-Nov-15 

Document Number: 63413 

**1** 

For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**SQD50N04-5m6L** 

Vishay Siliconix 

**==> picture [59 x 48] intentionally omitted <==**

www.vishay.com 

|**SPECIFICATIONS** (TC= 25 °C,unless otherwise noted)|**SPECIFICATIONS** (TC= 25 °C,unless otherwise noted)|**SPECIFICATIONS** (TC= 25 °C,unless otherwise noted)|**SPECIFICATIONS** (TC= 25 °C,unless otherwise noted)|||||
|---|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**MIN.**|**TYP.**|**MAX.**|**UNIT**|
|**Static**||||||||
|Drain-Source Breakdown Voltage|VDS|VGS= 0 V, ID= 250 μA||40|-|-|V|
|Gate-Source Threshold Voltage|VGS(th)|VDS= VGS, ID= 250 μA||1.5|2.0|2.5||
|Gate-Source Leakage|IGSS|VDS= 0 V, VGS= ± 20 V||-|-|± 100|nA|
|Zero Gate Voltage Drain Current|IDSS|VGS= 0 V|VDS= 40 V|-|-|1|μA|
|||VGS= 0 V|VDS= 40 V, TJ= 125 °C|-|-|50||
|||VGS= 0 V|VDS= 40 V, TJ= 175 °C|-|-|150||
|On-State Drain Currenta|ID(on)|VGS= 10 V|VDS 5 V|50|-|-|A|
|Drain-Source On-State Resistancea|RDS(on)|VGS= 10 V|ID= 20 A|-|0.0043|0.0056||
|||VGS= 10 V|ID= 20 A, TJ= 125 °C|-|-|0.0094||
|||VGS= 10 V|ID= 20 A, TJ= 175 °C|-|-|0.0115||
|||VGS= 4.5 V|ID= 15 A|-|0.0057|0.0070||
|Forward Transconductanceb|gfs|VDS= 15 V, ID= 15 A||-|100|-|S|
|**Dynamicb**||||||||
|Input Capacitance|Ciss|VGS= 0 V|VDS= 25 V, f = 1 MHz|-|2850|4000|pF|
|Output Capacitance|Coss|||-|360|500||
|Reverse Transfer Capacitance|Crss|||-|135|200||
|Total Gate Chargec|Qg|VGS= 10 V|VDS= 20 V, ID= 50 A|-|46|75|nC|
|Gate-Source Chargec|Qgs|||-|10|-||
|Gate-Drain Chargec|Qgd|||-|8|-||
|Gate Resistance|Rg|f = 1 MHz||1.3|2.8|4.5||
|Turn-On Delay Timec|td(on)|VDD= 20 V, RL= 0.4<br>ID 50 A, VGEN= 10 V, Rg= 1||-|9|15|ns|
|Rise Timec|tr|||-|19|30||
|Turn-Off Delay Timec|td(off)|||-|26|40||
|Fall Timec|tf|||-|10|15||
|**Source-Drain Diode Ratings and Characteristicsb**||||||||
|Pulsed Currenta|ISM|||-|-|200|A|
|Forward Voltage|VSD|IF= 30 A, VGS= 0 V||-|0.87|1.5|V|



## **Notes** 

a. Pulse test; pulse width  300 μs, duty cycle  2 %. 

b. Guaranteed by design, not subject to production testing. 

c. Independent of operating temperature. 

_Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability._ 

S15-2665-Rev. A, 09-Nov-15 

Document Number: 63413 

**2** 

For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**SQD50N04-5m6L** 

Vishay Siliconix 

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www.vishay.com<br>**----- End of picture text -----**<br>


## **TYPICAL CHARACTERISTICS** (TA = 25 °C, unless otherwise noted) 

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**----- Start of picture text -----**<br>
250<br>VGS = 10 V thru 6 V<br>200<br>VGS = 5 V<br>150<br>VGS = 4 V<br>100<br>50<br>VGS = 3 V<br>0<br>0 4 8 12 16 20<br>VDS - Drain-to-Source Voltage (V)<br>2nd line<br>2nd line<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


## **Output Characteristics** 

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Axis Title<br>100 10000<br>80<br>1000<br>60<br>40<br>TC = 25 °C 100<br>TC = 125 °C<br>20<br>TC = -55 °C<br>0 10<br>0 2 4 6 8 10<br>VGS - Gate-to-Source Voltage (V)<br>2nd line<br>2nd line 1st line 2nd line<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


## **Transfer Characteristics** 

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Axis Title<br>200 10000<br>TC = -55 °C<br>160 T C = 25 °C<br>1000<br>120<br>TC = 125 °C<br>80<br>100<br>40<br>0 10<br>0 10 20 30 40 50<br>ID - Drain Current (A)<br>2nd line<br>2nd line 1st line 2nd line<br> - Transconductance (S)<br>fs<br>g<br>**----- End of picture text -----**<br>


**Transconductance** 

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Axis Title<br>4000 10000<br>3200<br>Ciss<br>1000<br>2400<br>1600<br>Crss 100<br>800<br>Coss<br>0 10<br>0 8 16 24 32 40<br>VDS - Drain-to-Source Voltage (V)<br>2nd line<br>2nd line 1st line 2nd line<br>C - Capacitance (pF)<br>**----- End of picture text -----**<br>


## **Capacitance** 

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Axis Title<br>0.010 10000<br>0.008<br>VGS = 4.5 V 1000<br>0.006<br>0.004 V GS = 10 V<br>100<br>0.002<br>0.000 10<br>0 20 40 60 80 100<br>ID - Drain Current (A)<br>2nd line<br>On-Resistance vs. Drain Current<br>Axis Title<br>10 10000<br>ID = 50 A<br>8 V DS  = 20 V<br>1000<br>6<br>4<br>100<br>2<br>0 10<br>0 10 20 30 40 50<br>Qg - Total Gate Charge (nC)<br>2nd line<br>2nd line 1st line 2nd line<br> - On-Resistance (Ω)<br>DS(on)<br>R<br>2nd line 1st line 2nd line<br> - Gate-to-Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


## **Gate Charge** 

S15-2665-Rev. A, 09-Nov-15 

Document Number: 63413 

**3** 

For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**SQD50N04-5m6L** 

Vishay Siliconix 

**==> picture [59 x 48] intentionally omitted <==**

www.vishay.com 

## **TYPICAL CHARACTERISTICS** (TA = 25 °C, unless otherwise noted) 

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Axis Title<br>10000 100 10000<br>10 T J = 150 °C<br>VGS = 10 VGS = 10 V = 10 V<br>1000 1000<br>1<br>VGS = 4.5 VGS = 4.5 V = 4.5 V TJ = 25 °C<br>0.1<br>100 100<br>0.01<br>10 0.001 10<br>100 125 150 175 0 0.2 0.4 0.6 0.8 1.0 1.2<br>VSD - Source-to-Drain Voltage (V)<br>2nd line<br>Source Drain Diode Forward Voltage<br>Axis Title<br>10000 0.6 10000<br>0.2<br>1000 1000<br>-0.2<br>ID = 5 mA<br>-0.6<br>100 100<br>ID = 250 μA<br>TJJ = 150 °C -1.0<br>10 -1.4 10<br>8 10 -50 -25 0 25 50 75 100 125 150 175<br>TJ - Temperature (°C)<br>2nd line<br>Threshold Voltage<br>Axis Title<br>55 10000<br>ID = 1 mA<br>52<br>1000<br>49<br>46<br>100<br>43<br>40 10<br>-50 -25 0 25 50 75 100 125 150 175<br>TJ - Junction Temperature (°C)<br>2nd line<br>1st line 2nd line 2nd line 1st line 2nd line<br> - Source Current (A)<br>IS<br>1st line 2nd line 2nd line  Variance (V) 1st line 2nd line<br>GS(th)<br>V<br>2nd line 1st line 2nd line<br> - Drain-to-Source Voltage (V)<br>DS<br>V<br>**----- End of picture text -----**<br>


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2.5<br>ID = 30 A<br>2.1<br>VGS = 10 VGS = 10 V = 10 V<br>1.7<br>VGS = 4.5 VGS = 4.5 V = 4.5 V<br>1.3<br>0.9<br>0.5<br>-50 -25 0 25 50 75 100 125 150 175<br>TJ - Junction Temperature (°C)<br> - On-Resistance (Normalized)<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**On-Resistance vs. Junction Temperature** 

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0.05<br>0.04<br>0.03<br>0.02<br>0.01 TJJ = 150 °C<br>TJ = 25 °C<br>0<br>0 2 4 6 8 10<br>VGS - Gate-to-Source Voltage (V)<br> - On-Resistance (Ω)<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**On-Resistance vs. Gate-to-Source Voltage** 

**Drain Source Breakdown vs. Junction Temperature** 

S15-2665-Rev. A, 09-Nov-15 

Document Number: 63413 

**4** 

For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**SQD50N04-5m6L** Vishay Siliconix 

www.vishay.com 

## **THERMAL RATINGS** (TA = 25 °C, unless otherwise noted) 

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1000 10000<br>IDM limited<br>re<br>100 SS<br>100 μs<br>po A att TT 1000<br>10 err ID limited Eis 1 ms<br>A 10 ms TTT<br>1 726i 100 ms, 1 s, 10 s, DC<br>Limited by RDS(on) (1) 100<br>|<br>0.1 CE<br>TC = 25 °C<br>0.01 Single pulse CUT Mle BVDSS limited ccs]1i Te 10<br>0.01 0.1 1 10 100 1000<br>VDS - Drain-to-Source Voltage (V)<br>(1) VGS > minimum VGS at which RDS(on) is specified<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


## **Safe Operating Area** 

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1<br>Duty Cycle = 0.5 SS A SO GS OS a<br>PSSA 8 ew0 SS8me Oe rrr<br>0.2 Notes:<br>ce eeee allce PDM<br>0.1<br>0.1 See a 0.05 nllPe| eta Oe | |a Leeee_| t1 t2 t 1<br>a aa aow OOa en OS a2 a 0= - t2<br>0.02<br>P Lett tt tTTLT TTTTTTT 21. Dutyeer unit cycle,baseD == Rua =50 °C<br>0.01 a ell Single pulse Ul) | TEHIT TTTAI i'n"<br>0.0001 0.001 0.01 0.1 1 10 100 1000<br>Square Wave Pulse Duration (s)<br>Thermal Impedance<br>Normalized Effective Transient<br>**----- End of picture text -----**<br>


## **Normalized Thermal Transient Impedance, Junction-to-Ambient** 

S15-2665-Rev. A, 09-Nov-15 

Document Number: 63413 

**5** 

For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**SQD50N04-5m6L** 

Vishay Siliconix 

**==> picture [59 x 48] intentionally omitted <==**

www.vishay.com 

## **THERMAL RATINGS** (TA = 25 °C, unless otherwise noted) 

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Axis Title<br>10000<br>1<br>Duty Cycle = 0.5<br>0.2 1000<br>0.1<br>0.1<br>0.05 100<br>0.02<br>Single pulse<br>0.01 10<br>0.0001 0.001 0.01 0.1 1 10<br>Square Wave Pulse Duration (s)<br>2nd line<br>1st line 2nd line<br>Thermal Impedance<br>Normalized Effective Transient<br>**----- End of picture text -----**<br>


## **Normalized Thermal Transient Impedance, Junction-to-Case** 

## **Note** 

- The characteristics shown in the two graphs 

   - Normalized Transient Thermal Impedance Junction to Ambient (25 °C) 

   - Normalized Transient Thermal Impedance Junction to Case (25 °C) 

   - are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. 

_Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63413._ 

S15-2665-Rev. A, 09-Nov-15 

Document Number: 63413 

**6** 

For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Package Information** 

Vishay Siliconix 

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www.vishay.com 

## **TO-252AA Case Outline** 

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**----- Start of picture text -----**<br>
E A<br>C2<br>b3<br>b b2 C<br>e<br>A1<br>e1<br>E1<br>L3<br>D<br>H<br>L4<br>L5 L<br>gage plane height (0.5 mm)<br>D1<br>**----- End of picture text -----**<br>


||**MILLIMETERS**|**MILLIMETERS**|**INCHES**|**INCHES**|
|---|---|---|---|---|
|**DIM.**|**MIN.**|**MAX.**|**MIN.**|**MAX.**|
|A|2.18|2.38|0.086|0.094|
|A1|-|0.127|-|0.005|
|b|0.64|0.88|0.025|0.035|
|b2|0.76|1.14|0.030|0.045|
|b3|4.95|5.46|0.195|0.215|
|C|0.46|0.61|0.018|0.024|
|C2|0.46|0.89|0.018|0.035|
|D|5.97|6.22|0.235|0.245|
|D1|4.10|-|0.161|-|
|E|6.35|6.73|0.250|0.265|
|E1|4.32|-|0.170|-|
|H|9.40|10.41|0.370|0.410|
|e|2.28 BSC||0.090 BSC||
|e1|4.56 BSC||0.180 BSC||
|L|1.40|1.78|0.055|0.070|
|L3|0.89|1.27|0.035|0.050|
|L4|-|1.02|-|0.040|
|L5|1.01|1.52|0.040|0.060|
|ECN: T13-0592-Rev. A, 02-Sep-13<br>DWG: 6019|||||



## **Note** 

• Dimension L3 is for reference only. 

Revision: 02-Sep-13 

Document Number: 64424 

**1** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Application Note 826** 

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## Vishay Siliconix 

## **RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)** 

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0.224<br>(5.690)<br>0.180 0.055<br>(4.572) (1.397)<br>0.243 (6.180)<br>0.420<br>(10.668)<br>0.087 (2.202)<br>0.090 (2.286)<br>**----- End of picture text -----**<br>


Recommended Minimum Pads Dimensions in Inches/(mm) 

> Return to Index Return to Index 

Document Number: 72594 Revision: 21-Jan-08 

www.vishay.com 

3 

**Legal Disclaimer Notice** Vishay 

www.vishay.com 

## **Disclaimer** 

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. 

Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. 

Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. 

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. 

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 

_**© 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED**_ 

Revision: 01-Jan-2022 

Document Number: 91000 

**1** 



## Links

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