# Power MOSFET, N Channel, 300 V, 10 A, 0.33 ohm, TO-252AA, Surface Mount ![Product image](https://novapart.co/image/farnell:3929239/) **URL**: https://novapart.co/products/SQD10N30-330H_GE3/power-mosfet-n-channel-300-v-10-a-033-ohm-to-252aa **SKU**: SQD10N30-330H_GE3 **Manufacturer**: VISHAY **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.7670 **Stock**: 1000+ **Lead Time**: 176 days (indicative) ## Specifications | Parameter | Value | |---|---| | Svhc | Lead (21-Jan-2025) | | No. Of Pins | 3Pins | | Channel Type | N Channel | | Product Range | TrenchFET Series | | Qualification | AEC-Q101 | | Power Dissipation | 107W | | Transistor Mounting | Surface Mount | | Rds(On) Test Voltage | 10V | | Transistor Case Style | TO-252AA | | Drain Source Voltage Vds | 300V | | Operating Temperature Max | 175°C | | Continuous Drain Current Id | 10A | | Drain Source On State Resistance | 0.33ohm | | Gate Source Threshold Voltage Max | 3.8V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3929239/) **SQD15N06-42L** Vishay Siliconix www.vishay.com ## **Automotive N-Channel 60 V (D-S) 175 °C MOSFET** |**PRODUCT SUMMARYd**|**PRODUCT SUMMARYd**| |---|---| |VDS(V)|60| |RDS(on)(Ω) at VGS= 10 V|0.042| |RDS(on)(Ω) at VGS= 4.5 V|0.060| |ID(A)|15| |Configuration|Single| |Package|TO-252| **==> picture [142 x 113] intentionally omitted <==** **----- Start of picture text -----**
TO-252
Drain connected to tab
Ge
S
D
G
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## **FEATURES** - TrenchFET[®] power MOSFET - 100 % Rg and UIS tested - AEC-Q101 qualified - Package with low thermal resistance - Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 **==> picture [76 x 112] intentionally omitted <==** **----- Start of picture text -----**
D
G
S
N-Channel MOSFET
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Top View
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|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C, unless otherwise noted)|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C, unless otherwise noted)|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C, unless otherwise noted)|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C, unless otherwise noted)|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C, unless otherwise noted)| |---|---|---|---|---| |**PARAMETER**||**SYMBOL**|**LIMIT**|**UNIT**| |Drain-Source Voltage||VDS|60|V| |Gate-Source Voltage||VGS|± 20|| |Continuous Drain Current|TC= 25 °Ca|ID|15|A| ||TC= 125 °C||10|| |Continuous Source Current (Diode Conduction)a||IS|15|| |Pulsed Drain Currentb||IDM|50|| |Single Pulse Avalanche Current|L = 0.1 mH|IAS|18|| |Single Pulse Avalanche Energy||EAS|16.2|mJ| |Maximum Power Dissipationb|TC= 25 °C|PD|37|W| ||TC= 125 °C||11|| |OperatingJunction and Storage Temperature Range||TJ, Tstg|-55 to +175|°C| |**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**| |---|---|---|---|---| |**PARAMETER**||**SYMBOL**|**LIMIT**|**UNIT**| |Junction-to-Ambient|PCB Mountc|RthJA|50|°C/W| |Junction-to-Case (Drain)||RthJC|4|| ## **Notes** a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. - c. When mounted on 1" square PCB (FR4 material). S15-1873-Rev. G, 10-Aug-15 Document Number: 68880 **1** For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **SQD15N06-42L** Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** www.vishay.com |**SPECIFICATIONS**(TC= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TC= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TC= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TC= 25 °C,unless otherwise noted)||||| |---|---|---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**MIN.**|**TYP.**|**MAX.**|**UNIT**| |**Static**|||||||| |Drain-Source Breakdown Voltage|VDS|VGS= 0 V, ID= 250 μA||60|-|-|V| |Gate-Source Threshold Voltage|VGS(th)|VDS= VGS, ID= 250 μA||1.5|2|2.5|| |Gate-Source Leakage|IGSS|VDS= 0 V, VGS= ± 20 V||-|-|± 100|nA| |Zero Gate Voltage Drain Current|IDSS|VGS= 0 V|VDS= 60 V|-|-|1|μA| |||VGS= 0 V|VDS= 60 V, TJ= 125 °C|-|-|50|| |||VGS= 0 V|VDS= 60 V, TJ= 175 °C|-|-|150|| |On-State Drain Currenta|ID(on)|VGS= 10 V|VDS ≥5 V|30|-|-|A| |Drain-Source On-State Resistancea|RDS(on)|VGS= 10 V|ID= 10 A|-|0.036|0.042|Ω| |||VGS= 10 V|ID= 10 A, TJ= 125 °C|-|-|0.075|| |||VGS= 10 V|ID= 10 A, TJ= 175 °C|-|-|0.090|| |||VGS= 4.5 V|ID= 10 A, TJ= 125 °C|-|0.092|-|| |||VGS= 4.5 V|ID= 10 A, TJ= 175 °C|-|0.110|-|| |||VGS= 4.5 V|ID= 10 A|-|0.048|0.060|| |Forward Transconductanceb|gfs|VDS= 15 V, ID= 6 A||-|11|-|S| |**Dynamicb**|||||||| |Input Capacitance|Ciss|VGS= 0 V|VDS= 25 V, f = 1 MHz|-|425|535|pF| |Output Capacitance|Coss|||-|95|120|| |Reverse Transfer Capacitance|Crss|||-|40|50|| |Total Gate Chargec|Qg|VGS= 10 V|VDS= 30 V, ID= 15 A|-|9.5|15|nC| |Gate-Source Chargec|Qgs|||-|1.7|-|| |Gate-Drain Chargec|Qgd|||-|2.5|-|| |Gate Resistance|Rg|f = 1 MHz||1.2|2.5|5.4|Ω| |Turn-On Delay Timec|td(on)|VDD= 30 V, RL= 2Ω
ID ≅15 A, VGEN= 10 V, Rg= 1Ω||-|5|8|ns| |Rise Timec|tr|||-|10|15|| |Turn-Off Delay Timec|td(off)|||-|13|20|| |Fall Timec|tf|||-|8|12|| |**Source-Drain Diode Ratings and Characteristicsb**|||||||| |Pulsed Currenta|ISM|||-|-|50|A| |Forward Voltage|VSD|IF= 10 A, VGS= 0 V||-|0.9|1.2|V| |Reverse Recovery Time|trr|IF= 15 A, dI/dt = 100 A/μs||-|29|60|ns| ## **Notes** a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. _Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability._ S15-1873-Rev. G, 10-Aug-15 Document Number: 68880 **2** For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **SQD15N06-42L** Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## **TYPICAL CHARACTERISTICS** (TA = 25 °C, unless otherwise noted) **==> picture [215 x 182] intentionally omitted <==** **----- Start of picture text -----**
50
40 V GS = 10 V thru 6 V
VGS = 5 V
30
20
VGS = 4 V
10
VGS = 3 V
0
0 2 4 6 8 10
VDS - Drain-to-Source Voltage (V)
Drain Current (A)
-
ID
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**Output Characteristics** **==> picture [212 x 184] intentionally omitted <==** **----- Start of picture text -----**
40
32
24
TC = 25 °C
16
8 TC = 125 ° C
0 TC = - 55 °C
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
Drain Current (A)
-
ID
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**Transfer Characteristics** **==> picture [214 x 184] intentionally omitted <==** **----- Start of picture text -----**
25
20 TC = -55 °C
TC = 25 °C
15
TC = 125 °C
10
5
0
0 2 4 6 8 10
ID - Drain Current (A)
Transconductance (F)
-
fs
g
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0.10
0.08
0.06 VGS = 4.5 V
0.04
VGS = 10 V
0.02
0
0 4 8 12 16 20
ID - Drain Current (A)
On-Resistance vs. Drain Current
10
8 I D = 15 A
VDS = 30 V
6
4
2
0
0 2 4 6 8 10
Qg - Total Gate Charge (nC)
Gate Charge
) 
On-Resistance (
-
DS(on)
R
Gate-to-Source Voltage (V)
-
GS
V
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Transconductance
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700
600
500
Ciss
400
300
200
Coss
100
Crss
0
0 10 20 30 40 50 60
VDS - Drain-to-Source Voltage (V)
Capacitance (pF)
C -
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Capacitance
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S15-1873-Rev. G, 10-Aug-15 **3** Document Number: 68880 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **SQD15N06-42L** Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## **TYPICAL CHARACTERISTICS** (TA = 25 °C, unless otherwise noted) **==> picture [214 x 183] intentionally omitted <==** **----- Start of picture text -----**
2.5
ID = 10 A
2.1
1.7 VGS = 10 V
VGS = 4.5 V
1.3
0.9
0.5
-50 -25 0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
On-Resistance (Normalized)
-
DS(on)
R
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## **On-Resistance vs. Junction Temperature** **==> picture [214 x 186] intentionally omitted <==** **----- Start of picture text -----**
0.5
0.4
0.3
0.2
0.1 T J = 150 °C
TJ = 25 °C
0
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
)Ω
On-Resistance (
-
DS(on)
R
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**On-Resistance vs. Gate-to-Source Voltage** **==> picture [216 x 414] intentionally omitted <==** **----- Start of picture text -----**
100
10
TJ = 150 °C
1
0.1 TJ = 25 °C
0.01
0.001
0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
Source Drain Diode Forward Voltage
0.5
0.2
-0.1
ID = 5 mA
-0.4
ID = 250 µA
-0.7
-1.0
-50 -25 0 25 50 75 100 125 150 175
TJ - Temperature (°C)
Threshold Voltage
Source Current (A)
-
IS
(V)
GS(th)
V
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75
ID = 10 mA
72
69
66
63
60
- 50 - 25 0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
Drain-to-Source Voltage (V)
-
DS
V
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**On-Resistance vs. Junction Temperature** S15-1873-Rev. G, 10-Aug-15 Document Number: 68880 **4** For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **SQD15N06-42L** Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## **THERMAL RATINGS** (TA = 25 °C, unless otherwise noted) **==> picture [472 x 396] intentionally omitted <==** **----- Start of picture text -----**
IDM Limited
100
Limited by
RDS(on)* 100 µs
10
ID
Limited
1 ms
1 10 ms
10 0 ms
1 s ,10 s, DC
0.1
TC = 25 °C
Single Pulse
BVDSS Limited
0.01
0.01 0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS minimum VGS at which RDS(on) is specified
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 [-4] 10 [-3] 10 [-2] 10 [-1] 1 10 100 1000
Square Wave Pulse Duration (s)
- Drain Current (A)
ID
Thermal Impedance
Normalized Effective Transient
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## **Normalized Thermal Transient Impedance, Junction-to-Ambient** S15-1873-Rev. G, 10-Aug-15 Document Number: 68880 **5** For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **SQD15N06-42L** Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## **THERMAL RATINGS** (TA = 25 °C, unless otherwise noted) **==> picture [466 x 180] intentionally omitted <==** **----- Start of picture text -----**
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 [-4] 10 [-3] 10 [-2] 10 [-1] 1 10 100
Square Wave Pulse Duration (s)
Thermal Impedance
Normalized Effective Transient
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## **Normalized Thermal Transient Impedance, Junction-to-Case** ## **Note** - The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) - are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. _Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68880._ S15-1873-Rev. G, 10-Aug-15 Document Number: 68880 **6** For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **SQD15N06-42L** www.vishay.com **==> picture [59 x 48] intentionally omitted <==** Vishay Siliconix |**REVISION**|**HISTORYa**|**HISTORYa**| |---|---|---| |**REVISION**|**DATE**|**DESCRIPTION OF CHANGE**| |G|04-Aug-15|•
Revised Rgminimum limit| ## **Note** a. As of April 2014 S15-1873-Rev. G, 10-Aug-15 Document Number: 68880 **7** For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Ordering Information** Vishay Siliconix www.vishay.com **==> picture [59 x 48] intentionally omitted <==** ## **DPAK / TO-252 and Reverse DPAK** Ordering codes for the SQ rugged series power MOSFETs in the DPAK / TO-252 and Reverse DPAK packages: |**DATASHEET PART NUMBER**|**OLD ORDERING CODEa**|**NEW ORDERING CODE**| |---|---|---| |SQD07N25-350H|SQD07N25-350H-GE3|**SQD07N25-350H_GE3**| |SQD100N02-3m5L|-|**SQD100N02-3m5L_GE3**| |SQD100N03-3m2L|SQD100N03-3M2L-GE3|**SQD100N03-3M2L_GE3**| |SQD100N03-3m4|SQD100N03-3M4-GE3|**SQD100N03-3M4_GE3**| |SQD100N04-3m6|SQD100N04-3M6-GE3|**SQD100N04-3M6_GE3**| |SQD100N04-3m6L|SQD100N04-3M6L-GE3|**SQD100N04-3M6L_GE3**| |SQD10N30-330H|SQD10N30-330H-GE3|**SQD10N30-330H_GE3**| |SQD15N06-42L|SQD15N06-42L-GE3|**SQD15N06-42L_GE3**| |SQD19P06-60L|SQD19P06-60L-GE3|**SQD19P06-60L_GE3**| |SQD23N06-31L|SQD23N06-31L-GE3|**SQD23N06-31L_GE3**| |SQD25N06-22L|SQD25N06-22L-GE3|**SQD25N06-22L_GE3**| |SQD25N15-52|SQD25N15-52-GE3|**SQD25N15-52_GE3**| |SQD30N05-20L|SQD30N05-20L-GE3|**SQD30N05-20L_GE3**| |SQD40N06-14L|SQD40N06-14L-GE3|**SQD40N06-14L_GE3**| |SQD40N10-25|SQD40N10-25-GE3|**SQD40N10-25_GE3**| |SQD40P10-40L|SQD40P10-40L-GE3|**SQD40P10-40L_GE3**| |SQD45P03-12|SQD45P03-12-GE3|**SQD45P03-12_GE3**| |SQD50N04-5m6|SQD50N04-5M6-GE3|**SQD50N04-5M6_GE3**| |SQD50N04-5m6L|-|**SQD50N04-5m6L_GE3**| |SQD50N05-11L|SQD50N05-11L-GE3|**SQD50N05-11L_GE3**| |SQD50N06-09L|SQD50N06-09L-GE3|**SQD50N06-09L_GE3**| |SQD50N10-8m9L|SQD50N10-8M9L-GE3|**SQD50N10-8M9L_GE3**| |SQD50P03-07|SQD50P03-07-GE3|**SQD50P03-07_GE3**| |SQD50P04-13L|SQD50P04-13L-GE3|**SQD50P04-13L_GE3**| |SQD50P04-09L|SQD50P04-09L-GE3|**SQD50P04-09L_GE3**| |SQD50P06-15L|SQD50P06-15L-GE3|**SQD50P06-15L_GE3**| |SQD50P08-25L|SQD50P08-25L-GE3|**SQD50P08-25L_GE3**| |SQD50P08-28|SQD50P08-28-GE3|**SQD50P08-28_GE3**| |SQD90P04-9m4L|SQD90P04-9M4L-GE3|**SQD90P04-9M4L_GE3**| |SQD97N06-6m3L|SQD97N06-6M3L-GE3|**SQD97N06-6M3L_GE3**| |SQR40N10-25|SQR40N10-25-GE3|**SQR40N10-25_GE3**| |SQR50N04-3m8|SQR50N04-3M8-GE3|**SQR50N04-3M8_GE3**| ## **Note** a. Old ordering code is obsolete and no longer valid for new orders Revision: 11-Nov-15 Document Number: 66957 **1** For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Package Information** Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## **TO-252AA Case Outline** **==> picture [230 x 317] intentionally omitted <==** **----- Start of picture text -----**
E A
C2
b3
b b2 C
e
A1
e1
E1
L3
D
H
L4
L5 L
gage plane height (0.5 mm)
D1
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||**MILLIMETERS**|**MILLIMETERS**|**INCHES**|**INCHES**| |---|---|---|---|---| |**DIM.**|**MIN.**|**MAX.**|**MIN.**|**MAX.**| |A|2.18|2.38|0.086|0.094| |A1|-|0.127|-|0.005| |b|0.64|0.88|0.025|0.035| |b2|0.76|1.14|0.030|0.045| |b3|4.95|5.46|0.195|0.215| |C|0.46|0.61|0.018|0.024| |C2|0.46|0.89|0.018|0.035| |D|5.97|6.22|0.235|0.245| |D1|4.10|-|0.161|-| |E|6.35|6.73|0.250|0.265| |E1|4.32|-|0.170|-| |H|9.40|10.41|0.370|0.410| |e|2.28 BSC||0.090 BSC|| |e1|4.56 BSC||0.180 BSC|| |L|1.40|1.78|0.055|0.070| |L3|0.89|1.27|0.035|0.050| |L4|-|1.02|-|0.040| |L5|1.01|1.52|0.040|0.060| |ECN: T13-0592-Rev. A, 02-Sep-13
DWG: 6019||||| ## **Note** • Dimension L3 is for reference only. Revision: 02-Sep-13 Document Number: 64424 **1** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Package Information** Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## **QFN32 5 x 5 Case Outline** **==> picture [444 x 241] intentionally omitted <==** **----- Start of picture text -----**
D
Pin 1 location D2 K
indentifier [ (5)] 32 31 30 29 28 27 26 25 B 25 26 27 28 29 30 31 32 Pin 1 location
indentifier [ (5)]
L
1 24 24 1
2 23 23 2
3 22 22 3
4 21 21 4
E E2
5 20 20 5
6 19 19 6
7 18 18 7
8 17 17 8
9 10 11 12 13 14 15 16 16 15 14 13 12 11 10 9 b
0.1 C Terminal Tip (4) e 0.1 M C A B
Top view Bottom view
0.1 C
C A
0.1 C
Seating plane
Side view A1 A3
A
C
0.1
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|**DIM.**|**MILLIMETERS**|**MILLIMETERS**|**MILLIMETERS**|**INCHES**|**INCHES**|**INCHES**| |---|---|---|---|---|---|---| ||**MIN.**|**NOM.**|**MAX.**|**MIN.**|**NOM.**|**MAX.**| |A|0.75|0.85|0.95|0.029|0.033|0.037| |A1|0.00|-|0.05|0.000|-|0.002| |A3|0.20 ref.|||0.008 ref.||| |b|0.18|0.25|0.30|0.007|0.010|0.012| |D|5.00 BSC|||0.197 BSC||| |D2|3.00|3.10|3.20|0.118|0.122|0.126| |e|0.50 BSC|||0.020 BSC||| |E|5.00 BSC|||0.197 BSC||| |E2|3.00|3.10|3.20|0.118|0.122|0.126| |K|0.20|-|-|0.008|-|-| |L|0.30|0.40|0.50|0.012|0.016|0.020| |N(3)|32|||32||| |Nd(3)|8|||8||| |Ne(3)|8|||8||| ## **Notes** - (1) Use millimeters as the primary measurement > (2) Dimensioning and tolerances conform to ASME Y14.5M. - 1994 > (3) N is the number of terminals, Nd is the number of terminals in X-direction and Ne is the number of terminals in Y-direction. > (4) Dimension b applies to plated terminal and is measured between 0.15 mm and 0.30 mm from terminal tip > (5) The pin #1 identifier must be existed on the top surface of the package by using indentation mark or other feature of package body > (6) Package warpage max. 0.05 mm S14-2079-Rev. A, 20-Oct-14 DWG: 6027 Revision: 20-Oct-14 **1** Document Number: 67244 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Application Note 826** **==> picture [60 x 50] intentionally omitted <==** ## Vishay Siliconix ## **RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)** **==> picture [203 x 287] intentionally omitted <==** **----- Start of picture text -----**
0.224
(5.690)
0.180 0.055
(4.572) (1.397)
0.243 (6.180)
0.420
(10.668)
0.087 (2.202)
0.090 (2.286)
**----- End of picture text -----**
Recommended Minimum Pads Dimensions in Inches/(mm) > Return to Index Return to Index Document Number: 72594 Revision: 21-Jan-08 www.vishay.com 3 **Legal Disclaimer Notice** Vishay www.vishay.com **==> picture [59 x 48] intentionally omitted <==** ## **Disclaimer** ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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