# Power MOSFET, N Channel, 100 V, 9 A, 0.056 ohm, PowerPAK SC-70W, Surface Mount

![Product image](https://novapart.co/image/farnell:3777520/)

**URL**: https://novapart.co/products/SQA700CEJW-T1_GE3/power-mosfet-n-channel-100-v-9-a-0056-ohm-powerpak
**SKU**: SQA700CEJW-T1_GE3
**Manufacturer**: VISHAY
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1880
**Stock**: 1000+
**Lead Time**: 512 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Lead (07-Nov-2024) |
| No. Of Pins | 6Pins |
| Channel Type | N Channel |
| Product Range | TrenchFET |
| Qualification | AEC-Q101 |
| Power Dissipation | 13.6W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | PowerPAK SC-70W |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 9A |
| Drain Source On State Resistance | 0.056ohm |
| Gate Source Threshold Voltage Max | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3777520/)

**SQA700CEJW** 

www.vishay.com 

Vishay Siliconix 

## **Automotive N-Channel 100 V (D-S) 175 °C MOSFET** 

## **FEATURES** 

**==> picture [222 x 137] intentionally omitted <==**

**----- Start of picture text -----**<br>
PowerPAK [®]  SC-70W-6L Single<br>D<br>D 6<br>S 5<br>4<br>S 3s 1<br>7 2 D<br>3 D<br>1<br>G<br>Ss ><br>Top View Bottom View<br>Marking Code : Q2XXXX<br>2. 05 mm<br>2.05 mm<br>**----- End of picture text -----**<br>


- TrenchFET[®] power MOSFET 

- AEC-Q101 qualified 

- Wettable flank terminals 

- 100 % Rg and UIS tested 

- Material categorization: for definitions of compliance please see 

www.vishay.com/doc?99912 

D Top View Bottom View **Marking Code** : Q2XXXX **PRODUCT SUMMARY** VDS (V) 100 G RDS(on) (Ω) at VGS = 4.5 V 0.099 RDS(on) (Ω) at VGS = 10 V 0.079 ID (A) 9 Configuration Single S ~~——— *~~ 

N-Channel MOSFET 

## **ORDERING INFORMATION** 

Package PowerPAK SC-70W-6L SQA700CEJW 

Lead (Pb)-free and halogen-free 

(for detailed order number please see www.vishay.com/doc?79776) 

~~a~~ **ABSOLUTE MAXIMUM RATINGS** (TC = 25 °C, unless otherwise noted) ~~eG~~ **PARAMETER SYMBOL LIMIT UNIT** Drain-source voltage VDS 100 ~~a~~ V ~~E~~ Gate-source voltage ~~e~~ VGS ± 20 TC = 25 °C[a] 9 Continuous drain current ID ~~ae|~~ TC = 125 °C ~~ees eee~~ 5.2 Continuous source current (diode conduction)[a] IS 9 A ~~CO~~ Pulsed drain current[a] IDM 24 ~~a~~ Single pulse avalanche current L = 0.1 mH IAS ~~hae~~ 7.3 ~~POA~~ Single pulse avalanche energy ~~es~~ EAS ~~ee~~ 2.66 mJ TC = 25 °C 13.6 Maximum power dissipation PD W ~~a ee~~ TC = 125 °C 4.5 ~~| |[isd]~~ Operating junction and storage temperature range TJ, Tstg -55 to +175 °C ~~aSSS~~ Soldering recommendations (peak temperature)[ d, e] 260 **THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT** Junction-to-ambient PCB mount[ c] RthJA 90 °C/W Junction-to-case (drain) RthJC 11 

## **Notes** 

a. Package limited 

- b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % 

- c. When mounted on 1" square PCB (FR4 material) 

- d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70W-6L is a leadless package and features wettable terminals. The end of the lead terminal is plated with tin 

- e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components 

S21-0147-Rev. A, 22-Feb-2021 

Document Number: 63022 

**1** 

For technical questions, contact: automos.techsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**SQA700CEJW** 

Vishay Siliconix 

www.vishay.com 

|**SPECIFICATIONS**(TC= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TC= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TC= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TC= 25 °C,unless otherwise noted)|||||
|---|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**MIN.**|**TYP.**|**MAX.**|**UNIT**|
|**Static**||||||||
|Drain-source breakdown voltage|VDS|VGS= 0 V, ID= 250 μA||100|-|-|V|
|Gate-source threshold voltage|VGS(th)|VDS= VGS, ID= 250 μA||1.5|2.0|2.5||
|Gate-source leakage|IGSS|VDS= 0 V, VGS= ± 20 V||-|-|± 100|nA|
|Zero gate voltage drain current|IDSS|VGS= 0 V|VDS= 100 V|-|-|1|μA|
|||VGS= 0 V|VDS= 100 V, TJ= 125 °C|-|-|50||
|||VGS= 0 V|VDS= 100 V, TJ= 175 °C|-|-|250||
|On-state drain currenta|ID(on)|VGS= 10 V|VDS ≥5 V|10|-|-|A|
|Drain-source on-state resistancea|RDS(on)|VGS= 10 V|ID= 3 A|-|0.056|0.079|Ω|
|||VGS= 10 V|ID= 3 A, TJ= 125 °C|-|-|0.077||
|||VGS= 10 V|ID= 3 A, TJ= 175 °C|-|-|0.090||
|||VGS= 4.5 V|ID= 3 A|-|0.070|0.099||
|Forward transconductanceb|gfs|VDS= 15 V, ID= 3 A||-|9.0|-|S|
|**Dynamicb**||||||||
|Input capacitance|Ciss|VGS= 0 V|VDS= 25 V, f = 1 MHz|-|271|380|pF|
|Output capacitance|Coss|||-|140|200||
|Reverse transfer capacitance|Crss|||-|12|17||
|Totalgate chargec|Qg|VGS= 10 V|VDS= 50 V, ID= 2 A|-|6.2|9.5|nC|
|Gate-source chargec|Qgs|||-|1.2|-||
|Gate-drain chargec|Qgd|||-|1.3|-||
|Gate resistance|Rg|f = 1 MHz||0.5|1.1|1.6|Ω|
|Turn-on delay timec|td(on)|VDD= 50 V, RL= 25Ω<br>ID ≅2 A, VGEN= 10 V, Rg= 1Ω||-|6.0|10|ns|
|Rise timec|tr|||-|4|7||
|Turn-off delay timec|td(off)|||-|14|22||
|Fall timec|tf|||-|5|8||
|**Source-Drain Diode Ratings and Characteristicsb**||||||||
|Pulsed currenta|ISM|||-|-|24|A|
|Forward voltage|VSD|IF= 4.5 A, VGS= 0 V||-|0.86|1.2|V|
|Body diode reverse recovery time|trr|IF= 2 A, di/dt = 100 A/μs||-|24|48|ns|
|Body diode reverse recovery charge|Qrr|||-|20|40|nC|
|Reverse recovery fall time|ta|||-|15|-|ns|
|Reverse recovery rise time|tb|||-|9|-||
|Body diode peak reverse recovery current|IRM(REC)|||-|-1.5|-|A|



## **Notes** 

a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % 

b. Guaranteed by design, not subject to production testing 

c. Independent of operating temperature 

_Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability._ 

S21-0147-Rev. A, 22-Feb-2021 

Document Number: 63022 

**2** 

For technical questions, contact: automos.techsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**SQA700CEJW** 

Vishay Siliconix 

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www.vishay.com<br>**----- End of picture text -----**<br>


## **TYPICAL CHARACTERISTICS** (TA = 25 °C, unless otherwise noted) 

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25<br>VGS = 10 V thru 5 V<br>20<br>15 VGS = 4 V<br>10<br>5<br>VGS = 3 V<br>0<br>0 2 4 6 8 10<br>VDS - Drain-to-Source Voltage (V)<br>Output Characteristics<br>20<br>16 T C  = -55 °C<br>TC = 25 °C<br>12<br>8 T C = 125 °C<br>4<br>0<br>0 3 6 9 12 15<br>ID - Drain Current (A)<br> - Drain Current (A)<br>ID<br> - Transconductance (S)<br>fs<br>g<br>**----- End of picture text -----**<br>


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Transconductance<br>**----- End of picture text -----**<br>


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1000<br>C iss<br>100 C oss<br>10<br>Crss<br>1<br>0 20 40 60 80 100<br>VDS - Drain-to-Source Voltage (V)<br>C - Capacitance (pF)<br>**----- End of picture text -----**<br>


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Capacitance<br>**----- End of picture text -----**<br>


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15<br>12<br>9<br>6<br>TC = 25 °C<br>3 TC = 125 °C<br>TC = -55 °C<br>0<br>0 2 4 6 8<br>VGS - Gate-to-Source Voltage (V)<br>Transfer Characteristics<br>Axis Title<br>0.15<br>0.12<br>0.09<br>VGS = 4.5 V<br>0.06<br>VGS = 10 V<br>0.03<br>0<br>0 3 6 9 12 15<br>ID - Drain Current (A)<br>On-Resistance vs. Drain Current<br>Axis Title<br>10<br>8 VIDDS= 2 A= 50 V<br>6<br>4<br>2<br>0<br>0 2 4 6 8 10<br>Qg - Total Gate Charge (nC)<br> - Drain Current (A)<br>ID<br> - On-Resistance (Ω)<br>DS(on)<br>R<br> - Gate-to-Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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Gate Charge<br>**----- End of picture text -----**<br>


S21-0147-Rev. A, 22-Feb-2021 

Document Number: 63022 

**3** 

For technical questions, contact: automos.techsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**SQA700CEJW** 

Vishay Siliconix 

**==> picture [77 x 10] intentionally omitted <==**

**----- Start of picture text -----**<br>
www.vishay.com<br>**----- End of picture text -----**<br>


## **TYPICAL CHARACTERISTICS** (TA = 25 °C, unless otherwise noted) 

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2.3<br>ID = 2.5 A<br>1.9<br>VGS = 10 V<br>1.5<br>VGS = 4.5 V<br>1.1<br>0.7<br>0.3<br>-50 -25 0 25 50 75 100 125 150 175<br>TJ - Junction Temperature (°C)<br>On-Resistance vs. Junction Temperature<br>Axis Title<br>0.5<br>0.4<br>0.3<br>0.2<br>TJ = 150 °C<br>0.1<br>TJ = 25 °C<br>0<br>0 2 4 6 8 10<br>VGS - Gate-to-Source Voltage (V)<br> - On-Resistance (Normalized)<br>DS(on)<br>R<br> - On-Resistance (Ω)<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**On-Resistance vs. Gate-to-Source Voltage** 

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100<br>10<br>T J  = 150 °C<br>1<br>0.1 T J = 25 °C<br>0.01<br>0 0.2 0.4 0.6 0.8 1.0 1.2<br>VSD - Source-to-Drain Voltage (V)<br> - Source Current (A)<br>IS<br>**----- End of picture text -----**<br>


**Source Drain Diode Forward Voltage** 

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0.5 10000<br>0.2<br>1000<br>-0.1<br>ID = 5 mA<br>-0.4<br>ID = 250 μA 100<br>-0.7<br>-1.0 10<br>-50 -25 0 25 50 75 100 125 150 175<br>TJ - Junction Temperature (°C)<br>Threshold Voltage<br>Axis Title<br>125 10000<br>ID = 1 mA<br>120<br>1000<br>115<br>110<br>100<br>105<br>100 10<br>-50 -25 0 25 50 75 100 125 150 175<br>TJ - Junction Temperature (°C)<br>Drain Source Breakdown vs. Junction Temperature<br>Axis Title<br>100 10000<br>IDM limited<br>10<br>1000<br>1 100 us<br>Limited by RDS(on) a 1 ms 100<br>10 ms<br>0.1 100 ms, 1  s, 10 s, DC<br>T C  = 25 °C, BVDSS limited<br>single pulse<br>0.01 10<br>0.01 0.1 1 10 100 1000<br>VDS - Drain-to-Source Voltage (V)<br> - Variance (V) 1st line 2nd line<br>GS(th)<br>V<br>1st line 2nd line<br> - Drain-to-Source Voltage (V)<br>DS<br>V<br>1st line 2nd line<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


**Safe Operating Area** 

S21-0147-Rev. A, 22-Feb-2021 

Document Number: 63022 

**4** 

For technical questions, contact: automos.techsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**SQA700CEJW** 

Vishay Siliconix 

www.vishay.com 

## **THERMAL RATINGS** (TA = 25 °C, unless otherwise noted) 

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1<br>Duty Cycle = 0.5<br>0.2<br>0.1 Notes:<br>0.1<br>0.05 PDM<br>0.02 t1<br>1. Duty Cycle, D = t2 tt12<br>2. Per Unit Base = RthJA = 90 °C/W<br>3. TJM - T A = PDMZthJA [(t)]<br>Single Pulse<br>4. Surface Mounted<br>0.01<br>10 [-4] 10 [-3] 10 [-2] 10 [-1] 1 10 100 1000<br>Square Wave Pulse Duration (s)<br>Normalized Thermal Transient Impedance, Junction-to-Ambient<br>2<br>1<br>Duty cycle = 0.5<br>0.2<br>0.1<br>0.1<br>0.05<br>0.02<br>Single pulse<br>0.01<br>10 [-4] 10 [-3] 10 [-2] 10 [-1] 1 10<br>Square Wave Pulse Duration (s)<br>Thermal Impedance<br>Normalized Effective Transient<br>tn<br>eisTnare deecna<br>vitc mp<br>e<br>ffEd I lamr<br>e e<br>h<br>zila T<br>rmo<br>N<br>**----- End of picture text -----**<br>


**Normalized Thermal Transient Impedance, Junction-to-Case** 

_Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63022._ 

S21-0147-Rev. A, 22-Feb-2021 

Document Number: 63022 

**5** 

For technical questions, contact: automos.techsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Legal Disclaimer Notice** Vishay 

www.vishay.com 

## **Disclaimer** 

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product.  To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. 

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications.  Such statements are not binding statements about the suitability of products for a particular application.  It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time.  All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts.  Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. 

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. 

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.  Product names and markings noted herein may be trademarks of their respective owners. 

_**© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED**_ 

Revision: 01-Jan-2021 

Document Number: 91000 

**1** 



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