# Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 850 mA, 850 mA, 0.21 ohm

![Product image](https://novapart.co/image/farnell:3470722RL/)

**URL**: https://novapart.co/products/SQ1539EH-T1_GE3/dual-mosfet-complementary-n-and-p-channel-30-v-850
**SKU**: SQ1539EH-T1_GE3
**Manufacturer**: VISHAY
**Category**: Semiconductors - Discretes || FETs || Dual MOSFETs
**Price**: €0.1640
**Stock**: 1000+
**Lead Time**: 141 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (04-Feb-2026) |
| No. Of Pins | 6Pins |
| Channel Type | Complementary N and P Channel |
| Product Range | TrenchFET Series |
| Qualification | AEC-Q101 |
| Transistor Case Style | SC-70 |
| Operating Temperature Max | 175°C |
| Power Dissipation N Channel | 1.5W |
| Power Dissipation P Channel | 1.5W |
| Drain Source Voltage Vds N Channel | 30V |
| Drain Source Voltage Vds P Channel | 30V |
| Continuous Drain Current Id N Channel | 850mA |
| Continuous Drain Current Id P Channel | 850mA |
| Drain Source On State Resistance N Channel | 0.21ohm |
| Drain Source On State Resistance P Channel | 0.21ohm |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3470722RL/)

**SQ1539EH** 

www.vishay.com 

Vishay Siliconix 

## **N-and P-Channel 30 V (D-S) 175 °C MOSFET** 

|**PRODUCT SUMMARY**|**PRODUCT SUMMARY**|**PRODUCT SUMMARY**|
|---|---|---|
||**N-CHANNEL**|**P-CHANNEL**|
|VDS(V)|30|-30|
|RDS(on)(Ω) at VGS= ± 10 V|0.280|0.940|
|RDS(on)(Ω) at VGS= ± 4.5 V|0.380|1.800|
|RDS(on)(Ω) at VGS= ± 4.5 V<br>ID(A)|0.380<br>0.85|1.800<br>-0.85|
|Configuration|N & P Pair||
|Package|SC-70||



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SOT-363<br>SC-70 Dual (6 leads)<br>S2<br>4<br>G2<br>5<br>D1<br>6<br>3<br>V 2 D2<br>Od<br>A 1 G1<br>S1<br>Top View<br>**----- End of picture text -----**<br>


## **FEATURES** 

- TrenchFET[®] power MOSFET 

- AEC-Q101 qualified 

- 100 % Rg and UIS tested 

- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 ~~SSE~~ 

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D1 S2<br>G2<br>G1<br>S1 D2<br>N-Channel MOSFET P-Channel MOSFET<br>**----- End of picture text -----**<br>


## **Marking Code** : 9R 

|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C,unless otherwise noted)|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C,unless otherwise noted)|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C,unless otherwise noted)|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C,unless otherwise noted)|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C,unless otherwise noted)|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C,unless otherwise noted)|
|---|---|---|---|---|---|
|**PARAMETER**||**SYMBOL**|**N-CHANNEL**|**P-CHANNEL**|**UNIT**|
|Drain-Source Voltage||VDS|30|-30|V|
|Gate-Source Voltage||VGS|± 20|||
|Continuous Drain Currentc|TC= 25 °C|ID|0.85|-0.85|A|
||TC= 125 °C||0.85|-0.56||
|Continuous Source Current (Diode Conduction)||IS|0.85|-0.85||
|Pulsed Drain Currenta||IDM|3.3|-3.3||
|Single Pulse Avalanche Current|L = 0.1 mH|IAS|3.5|-1.9||
|Single Pulse Avalanche Energy||EAS|0.6|0.2|mJ|
|Maximum Power Dissipationa|TC= 25 °C|PD|1.5|1.5|W|
||TC= 125 °C||0.5|0.5||
|Operating Junction and Storage Temperature Range||TJ, Tstg|-55 to +175||°C|



## **THERMAL RESISTANCE RATINGS** 

|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|
|---|---|---|---|---|---|
|**PARAMETER**||**SYMBOL**|**N-CHANNEL**|**P-CHANNEL**|**UNIT**|
|Junction-to-Ambient|PCB Mountb|RthJA|220|220|°C/W|
|Junction-to-Foot (Drain)||RthJF|100|100||



## **Notes** 

a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. 

b. When mounted on 1" square PCB (FR4 material). 

c. Package limited. 

S15-1925-Rev. A, 17-Aug-15 

Document Number: 62993 

**1** 

For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**SQ1539EH** 

**==> picture [59 x 48] intentionally omitted <==**

www.vishay.com 

Vishay Siliconix 

|**SPECIFICATIONS** (TC= 25 °C,unless otherwise noted)|**SPECIFICATIONS** (TC= 25 °C,unless otherwise noted)|**SPECIFICATIONS** (TC= 25 °C,unless otherwise noted)|**SPECIFICATIONS** (TC= 25 °C,unless otherwise noted)||||||
|---|---|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|||**MIN.**|**TYP.**|**MAX.**|**UNIT**|
|**Static**|||||||||
|Drain-Source Breakdown Voltage|VDS|VGS= 0 V, ID= 250μA||N-Ch|30|-|-|V|
|||VGS= 0 V, ID= -250μA||P-Ch|-30|-|-||
|Gate-Source Threshold Voltage|VGS(th)|VDS= VGS, ID= 250μA||N-Ch|1|1.8|2.6||
|||VDS= VGS, ID= -250μA||P-Ch|-1|-1.8|-2.6||
|Gate-Source Leakage|IGSS|VDS= 0 V, VGS= ± 20 V||N-Ch|-|-|± 100|nA|
|||||P-Ch|-|-|± 100||
|Zero Gate Voltage Drain Current|IDSS|VGS= 0 V|VDS= 30 V|N-Ch|-|-|1|μA|
|||VGS= 0 V|VDS= -30 V|P-Ch|-|-|-1||
|||VGS= 0 V|VDS= 30 V, TJ= 125 °C|N-Ch|-|-|50||
|||VGS= 0 V|VDS= -30 V, TJ= 125 °C|P-Ch|-|-|-50||
|||VGS= 0 V|VDS= 30 V, TJ= 175 °C|N-Ch|-|-|150||
|||VGS= 0 V|VDS= -30 V, TJ= 175 °C|P-Ch|-|-|-150||
|On-State Drain Currenta|ID(on)|VGS= 10 V|VDS= 5 V|N-Ch|2|-|-|A|
|||VGS= -10 V|VDS= -5 V|P-Ch|-0.5|-|-||
|Drain-Source On-State Resistancea|RDS(on)|VGS= 10 V|ID= 1 A|N-Ch|-|0.210|0.280|Ω|
|||VGS= -10 V|ID= -0.5 A|P-Ch|-|0.788|0.940||
|||VGS= 4.5 V|ID= 0.1 A|N-Ch|-|0.290|0.380||
|||VGS= -4.5 V|ID= -0.1 A|P-Ch|-|1.400|1.800||
|Forward Transconductanceb|gfs|VDS= 15 V, ID= 0.7 A||N-Ch|-|1.2|-|S|
|||VDS= -15 V, ID= -0.5 A||P-Ch|-|0.6|-||
|**Dynamicb**|||||||||
|Input Capacitance|Ciss|VGS= 0 V|VDS= 15 V, f = 1 MHz|N-Ch|-|38|48|pF|
|||VGS= 0 V|VDS= -15 V, f = 1 MHz|P-Ch|-|40|50||
|Output Capacitance|Coss|VGS= 0 V|VDS= 15 V, f = 1 MHz|N-Ch|-|14|21||
|||VGS= 0 V|VDS= -15 V, f = 1 MHz|P-Ch|-|14|21||
|Reverse Transfer Capacitance|Crss|VGS= 0 V|VDS= 15 V, f = 1 MHz|N-Ch|-|6|10||
|||VGS= 0 V|VDS= -15 V, f = 1 MHz|P-Ch|-|5|9||
|Total Gate Charge|Qg|VGS= 4.5 V|VDS= 15 V, ID= 0.7 A|N-Ch|-|1|1.4|nC|
|||VGS= -4.5 V|VDS= -15 V, ID= -0.5 A|P-Ch|-|1.2|1.6||
|Gate-Source Charge|Qgs|VGS= 4.5 V|VDS= 15 V, ID= 0.7 A|N-Ch|-|0.2|-||
|||VGS= -4.5 V|VDS= -15 V, ID= -0.5 A|P-Ch|-|0.3|-||
|Gate-Drain Chargec|Qgd|VGS= 4.5 V|VDS= 15 V, ID= 0.7 A|N-Ch|-|0.4|-||
|||VGS= -4.5 V|VDS= -15 V, ID= -0.5 A|P-Ch|-|0.6|-||
|Gate Resistance|Rg|f = 1 MHz||N-Ch|5.8|-|17.3|Ω|
|||||P-Ch|3.7|-|11.1||
|Turn-On Delay Time|td(on)|VDD= 15 V, RL= 20Ω<br>ID ≅0.7 A, VGEN= 4.5 V, Rg= 1Ω||N-Ch|-|3|6|ns|
|||VDD= -15 V, RL= 20Ω<br>ID ≅-0.5 A, VGEN= -4.5 V, Rg= 1Ω||P-Ch|-|4|8||
|Rise Time|tr|VDD= 15 V, RL= 20Ω<br>ID ≅0.7 A, VGEN= 4.5 V, Rg= 1Ω||N-Ch|-|18|28||
|||VDD= -15 V, RL= 20Ω<br>ID ≅-0.5 A, VGEN= -4.5 V, Rg= 1Ω||P-Ch|-|39|50||
|Turn-Off Delay Time|td(off)|VDD= 15 V, RL= 20Ω<br>ID ≅0.7 A, VGEN= 4.5 V, Rg= 1Ω||N-Ch|-|8|14||
|||VDD= -15 V, RL= 20Ω<br>ID ≅-0.5 A, VGEN= -4.5 V, Rg= 1Ω||P-Ch|-|10|16||
|Fall Time|tf|VDD= 15 V, RL= 20Ω<br>ID ≅0.7 A, VGEN= 4.5 V, Rg= 1Ω||N-Ch|-|32|46||
|||VDD= -15 V, RL= 20Ω<br>ID ≅-0.5 A, VGEN= -4.5 V, Rg= 1Ω||P-Ch|-|17|25||



S15-1925-Rev. A, 17-Aug-15 

Document Number: 62993 

**2** 

For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**SQ1539EH** 

**==> picture [59 x 48] intentionally omitted <==**

www.vishay.com 

Vishay Siliconix 

|**SPECIFICATIONS** (TC= 25 °C,unless otherwise noted)|**SPECIFICATIONS** (TC= 25 °C,unless otherwise noted)|**SPECIFICATIONS** (TC= 25 °C,unless otherwise noted)||||||
|---|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**MIN.**|**TYP.**|**MAX.**|**UNIT**|
|**Source-Drain Diode Ratings and Characteristicsb**||||||||
|Pulsed Currenta|ISM|TC= 25 °C|N-Ch|-|-|3.3|A|
||||P-Ch|-|-|-3.3||
|Forward Voltage|VSD|IS= 0.5 A|N-Ch|-|0.8|1.2|V|
|||IS= -0.4 A|P-Ch|-|-0.8|-1.2||



## **Notes** 

- a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. 

- b. Guaranteed by design, not subject to production testing. 

- c. Independent of operating temperature. 

_Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability._ 

S15-1925-Rev. A, 17-Aug-15 

Document Number: 62993 

**3** 

For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**SQ1539EH** 

Vishay Siliconix 

**==> picture [59 x 48] intentionally omitted <==**

www.vishay.com 

## **N-CHANNEL TYPICAL CHARACTERISTICS** (TA = 25 °C, unless otherwise noted) 

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**----- Start of picture text -----**<br>
2.0<br>VGS = 10 V thru 4 V<br>1.6<br>1.2<br>0.8<br>VGS = 3 V<br>0.4<br>VGS = 2 V<br>0.0<br>0.0 0.4 0.8 1.2 1.6 2.0<br>VDS - Drain-to-Source Voltage (V)<br>Output Characteristics<br>1.0<br>0.8<br>0.6<br>0.4<br>VGS = 4.5 V<br>0.2<br>VGS = 10 V<br>0.0<br>0.0 0.4 0.8 1.2 1.6 2.0<br>ID - Drain Current (A)<br> - Drain Current (A)<br>ID<br> - On-Resistance (Ω)<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**On-Resistance vs. Drain Current** 

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**----- Start of picture text -----**<br>
10<br>8 I D  = 0.7 A<br>6<br>4<br>2<br>0<br>0.0 0.3 0.6 0.9 1.2<br>Qg - Total Gate Charge (nC)<br> - Gate-to-Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


## **Gate Charge** 

S15-1925-Rev. A, 17-Aug-15 

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**----- Start of picture text -----**<br>
3.0<br>2.4<br>1.8<br>TC = 25 °C<br>1.2<br>0.6 T C  = 125  ° C<br>TC = - 55 °C<br>0.0<br>0 2 4 6 8 10<br>VGS - Gate-to-Source Voltage (V)<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


**Transfer Characteristics** 

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60<br>50<br>Ciss<br>40<br>30<br>Coss<br>20<br>Crss<br>10<br>0<br>0 5 10 15 20 25 30<br>VDS - Drain-to-Source Voltage (V)<br>Capacitance<br>2.0<br>ID = 0.5 A<br>1.7<br>VGS =10 V<br>1.4<br>VGS = 4.5 V<br>1.1<br>0.8<br>0.5<br>- 50 - 25 0 25 50 75 100 125 150 175<br>TJ - Junction Temperature (°C)<br>C - Capacitance (pF)<br>(Normalized)<br> - On-Resistance<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


## **On-Resistance vs. Junction Temperature** 

Document Number: 62993 

**4** 

For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**SQ1539EH** 

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**==> picture [59 x 48] intentionally omitted <==**

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## **N-CHANNEL TYPICAL CHARACTERISTICS** (TA = 25 °C, unless otherwise noted) 

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**----- Start of picture text -----**<br>
10<br>1 TJ = 150 °C<br>0.1<br>0.01 TJ = 25 °C<br>0.001<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2<br>VSD - Source-to-Drain Voltage (V)<br> - Source Current (A)<br>IS<br>**----- End of picture text -----**<br>


**Source Drain Diode Forward Voltage** 

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**----- Start of picture text -----**<br>
1.0<br>0.8<br>0.6<br>TJ = 150 °C<br>0.4<br>0.2<br>TJ = 25 °C<br>0.0<br>0 2 4 6 8 10<br>VGS - Gate-to-Source Voltage (V)<br> - On-Resistance (Ω)<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**On-Resistance vs. Gate-to-Source Voltage** 

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**----- Start of picture text -----**<br>
40<br>ID = 1 mA<br>38<br>IDD = 5 mA 36<br>34<br>32<br>30<br>100 125 150 175 - 50 - 25 0 25 50 75 100 125 150 175<br>°C)C) TJ - Junction Temperature (°C)<br>Drain Source Breakdown vs. Junction Temperature<br>10<br>IDM Limited<br>Limited by RDS(on)* 100 μs<br>1<br>1 ms<br>ID Limited 10 ms<br>0.1<br>100 m s, 1s, 10 s, DC<br>TC = 25  ° C BVDSS Limited<br>Single Pulse<br>0.01<br>0.01 0.1 1 10 100<br>VDS - Drain-to-Source Voltage (V)<br>* VGS > minimum VGS at which RDS(on) is specified<br> - Drain-to-Source Voltage (V)<br>DS<br>V<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
0.5<br>0.2<br>- 0.1 IDD = 5 mA<br>- 0.4<br>ID = 250 μA<br>- 0.7<br>- 1.0<br>- 50 - 25 0 25 50 75 100 125 150 175<br>TJ - Temperature (°C)C)<br> Variance (V)<br>GS(th)<br>V<br>**----- End of picture text -----**<br>


**Drain Source Breakdown vs. Junction Temperature** 

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Threshold Voltage<br>**----- End of picture text -----**<br>


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Safe Operating Area<br>**----- End of picture text -----**<br>


Document Number: 62993 

S15-1925-Rev. A, 17-Aug-15 

**5** 

For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**SQ1539EH** 

Vishay Siliconix 

**==> picture [59 x 48] intentionally omitted <==**

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## **N-CHANNEL THERMAL RATINGS** (TA = 25 °C, unless otherwise noted) 

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**----- Start of picture text -----**<br>
2<br>1<br>Duty Cycle = 0.5<br>0.2<br>Notes:<br>0.1<br>0.1 PDM<br>0.05<br>t 1<br>0.02 1. Dut2. Per Unit Base = Ry Cycle, D =t2 thJA tt12  = 220 °C/W<br>3. T JM - TA = PDMZthJA [(t)]<br>Single Pulse 4. Surface Mounted<br>0.01<br>10 [-4] 10 [-3] 10 [-2] 10 [-1] 1 10 100 600<br>Square Wave Pulse Duration (s)<br>Normalized Thermal Transient Impedance, Junction-to-Ambient<br>2<br>1<br>Duty Cycle = 0.5<br>0.2<br>0.1<br>0.1<br>0.05<br>0.02<br>Single Pulse<br>0.01<br>10 [-4] 10 [-3] 10 [-2] 10 [-1] 1 10<br>Square Wave Pulse Duration (s)<br>Thermal Impedance<br>Normalized Effective Transient<br>Thermal Impedance<br>Normalized Effective Transient<br>**----- End of picture text -----**<br>


## **Normalized Thermal Transient Impedance, Junction-to-Foot** 

## **Note** 

- The characteristics shown in the two graphs 

   - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) 

   - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) 

   - are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. 

S15-1925-Rev. A, 17-Aug-15 

Document Number: 62993 

**6** 

For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**SQ1539EH** 

Vishay Siliconix 

**==> picture [59 x 48] intentionally omitted <==**

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## **P-CHANNEL TYPICAL CHARACTERISTICS** (TA = 25 °C, unless otherwise noted) 

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**----- Start of picture text -----**<br>
1.0<br>0.8<br>VGS = 10 V thru 6 V<br>0.6<br>VGS = 5 V<br>0.4<br>VGS = 4 V<br>0.2<br>0.0<br>0.0 0.3 0.6 0.9 1.2 1.5<br>VDS - Drain-to-Source Voltage (V)<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


**Output Characteristics** 

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**----- Start of picture text -----**<br>
0.5<br>0.4<br>0.3<br>0.2 T C  = 25 °C<br>0.1<br>TC = 125 °C TC = - 55 °C<br>0.0<br>0 2 4 6 8 10<br>VGS - Gate-to-Source Voltage (V)<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


**Transfer Characteristics** 

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**----- Start of picture text -----**<br>
5<br>4<br>3<br>2<br>VGS = 4.5V<br>1<br>VGS =10 V<br>0<br>0.0 0.2 0.4 0.6 0.8 1.0<br>ID - Drain Current (A)<br> - On-Resistance (Ω)<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**On-Resistance vs. Drain Current** 

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**----- Start of picture text -----**<br>
10<br>8<br>ID = -0.5 A<br>VDS = -15 V<br>6<br>4<br>2<br>0<br>0.0 0.3 0.6 0.9 1.2 1.5<br>Qg - Total Gate Charge (nC)<br> - Gate-to-Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


## **Gate Charge** 

S15-1925-Rev. A, 17-Aug-15 

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7<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
60<br>50<br>Ciss<br>40<br>30<br>20<br>Coss<br>10<br>Crss<br>0<br>0 5 10 15 20 25 30<br>VDS - Drain-to-Source Voltage (V)<br>Capacitance<br>2.0<br>ID = 0.3 A<br>1.7<br>VGS = 10 V<br>1.4<br>VGS = 4.5 V<br>1.1<br>0.8<br>0.5<br>- 50 - 25 0 25 50 75 100 125 150 175<br>TJ - Junction Temperature (°C)<br>C - Capacitance (pF)<br>(Normalized)<br> - On-Resistance<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**On-Resistance vs. Junction Temperature** 

Document Number: 62993 

For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**SQ1539EH** 

Vishay Siliconix 

**==> picture [59 x 48] intentionally omitted <==**

www.vishay.com 

## **P-CHANNEL TYPICAL CHARACTERISTICS** (TA = 25 °C, unless otherwise noted) 

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**----- Start of picture text -----**<br>
10<br>1<br>TJ = 150 °C<br>0.1<br>0.01 TJ = 25 °C<br>0.001<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2<br>VSD - Source-to-Drain Voltage (V)<br> - Source Current (A)<br>IS<br>**----- End of picture text -----**<br>


## **Source Drain Diode Forward Voltage** 

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**----- Start of picture text -----**<br>
5<br>4<br>3<br>TJ = 150 °C<br>2<br>1<br>TJ = 25 °C<br>0<br>0 2 4 6 8 10<br>VGS - Gate-to-Source Voltage (V)<br> - On-Resistance (Ω)<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**On-Resistance vs. Gate-to-Source Voltage** 

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**----- Start of picture text -----**<br>
1.0<br>0.7<br>ID = 250 μA<br>0.4<br>0.1 ID = 5 mA<br>- 0.2<br>- 0.5<br>- 50 - 25 0 25 50 75 100 125 150 175<br>TJ - Temperature (°C)<br> Variance (V)<br>GS(th)<br>V<br>**----- End of picture text -----**<br>


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Threshold Voltage<br>**----- End of picture text -----**<br>


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- 28<br>- 30<br>ID = 1 mA<br>- 32<br>- 34<br>- 36<br>- 38<br>- 50 - 25 0 25 50 75 100 125 150 175<br>TJ - Junction Temperature (°C)<br> - Drain-to-Source Voltage (V)<br>DS<br>V<br>**----- End of picture text -----**<br>


**Drain Source Breakdown vs. Junction Temperature** 

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**----- Start of picture text -----**<br>
10<br>IDM Limited<br>100 µs<br>1 Limited by RDS(on)*<br>1 ms<br>ID Limited 10 ms<br>0.1<br>100 ms<br>1s, 10  s, DC<br>BVDSS Limited<br>T C  = 25 °C<br>Single Pulse<br>0.01<br>0.01 0.1 1 10 100<br>VDS - Drain-to-Source Voltage (V)<br>* VGS > minimum VGS at which RDS(on) is specified<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


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Safe Operating Area<br>**----- End of picture text -----**<br>


**8** Document Number: 62993 

S15-1925-Rev. A, 17-Aug-15 

For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**SQ1539EH** 

**==> picture [59 x 48] intentionally omitted <==**

www.vishay.com 

Vishay Siliconix 

## **P-CHANNEL THERMAL RATINGS** (TA = 25 °C, unless otherwise noted) 

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**----- Start of picture text -----**<br>
2<br>1<br>Duty Cycle = 0.5<br>0.2<br>Notes:<br>0.1<br>0.1 PDM<br>0.05<br>t 1<br>1. Duty Cycle, D =t2 tt12<br>0.02 2. Per Unit Base = R thJA = 220 °C/W<br>3. T JM - TA = PDMZthJA [(t)]<br>Single Pulse 4. Surface Mounted<br>0.01<br>10 [-4] 10 [-3] 10 [-2] 10 [-1] 1 10 100 600<br>Square Wave Pulse Duration (s)<br>Normalized Thermal Transient Impedance, Junction-to-Ambient<br>2<br>1<br>Duty Cycle = 0.5<br>0.2<br>0.1<br>0.1<br>0.05<br>0.02<br>Single Pulse<br>0.01<br>10 [-4] 10 [-3] 10 [-2] 10 [-1] 1 10<br>Square Wave Pulse Duration (s)<br>Thermal Impedance<br>Normalized Effective Transient<br>Thermal Impedance<br>Normalized Effective Transient<br>**----- End of picture text -----**<br>


## **Normalized Thermal Transient Impedance, Junction-to-Foot** 

## **Note** 

- The characteristics shown in the two graphs 

   - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) 

   - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) 

   - are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. 

_Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62993._ 

S15-1925-Rev. A, 17-Aug-15 

Document Number: 62993 

**9** 

For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

## ~~a~~ **Package Information Vishay Siliconix** 

**==> picture [482 x 192] intentionally omitted <==**

**----- Start of picture text -----**<br>
6 5 4 E1 E oteeee DimAA1 ee Min 0.90– Nom –– Max 1.100.10 0.035 Min – Nom –– ee Max 0.0430.004<br>1 2 3 a A2 0.80 – 1.00 0.031 – 0.039<br>-B- ee b 0.15 – 0.30 0.006 – 0.012<br>ee c 0.10 – 0.25 0.004 – 0.010<br>e b<br>e1 ee D 1.80 2.00 2.20 0.071 0.079 0.087<br>a ee E 1.80 2.10 2.40 0.071 0.083 0.094<br>D -A-<br>- c ee E1 1.15 1.25 1.35 0.045 0.049 0.053<br>a e 0.65BSC 0.026BSC<br>A2 A ee e1 1.20 1.30 1.40 0.047 0.051 0.055<br>ee L 0.10 0.20 0.30 0.004 0.008 0.012<br>We | L ee 7 Nom 7 Nom<br>A1 ECN: S-03946—Rev. B, 09-Jul-01<br>DWG:  5550<br>**----- End of picture text -----**<br>


Document Number: 71154 06-Jul-01 

www.vishay.com 

**1** 

**AN816** 

# **Vishay Siliconix** 

## **Dual-Channel LITTLE FOOT** ® **6-Pin SC-70 MOSFET Copper Leadframe Version Recommended Pad Pattern and Thermal Performance** 

## INTRODUCTION 

The new dual 6-pin SC-70 package with a copper leadframe enables improved on-resistance values and enhanced thermal  performance as compared to the existing 3-pin and 6-pin packages with Alloy 42 leadframes. These devices are intended for small  to medium load applications where a miniaturized package is required. Devices in this package come in a range  of on-resistance values, in n-channel and p-channel versions. This technical note discusses pin-outs, package outlines, pad patterns, evaluation board layout, and thermal performance for the dual-channel version. 

## PIN-OUT 

Figure 1 shows the pin-out description and Pin 1 identification for the dual-channel SC-70 device in the 6-pin configuration. Both n-and p-channel devices are available in this package – the drawing example below illustrates the p-channel device. 

**==> picture [113 x 132] intentionally omitted <==**

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SOT-363<br>SC-70 (6-LEADS)<br>S1 1 6 D1<br>G1 2 5 G2<br>D2 3 4 S2<br>t e<br>Top View<br>FIGURE  1.<br>**----- End of picture text -----**<br>


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87 (mil)<br>26 (mil)<br>6 5 4<br>96 (mil)<br>71 (mil)<br>aay<br>48 (mil)<br>23 (mil) 61 (mil)<br>1 2 3<br>0.0 (mil)<br>“gon<br>8 (mil)<br>26 (mil)<br>16 (mil)<br>FIGURE  2. SC-70 (6 leads) Dual<br>**----- End of picture text -----**<br>


## EVALUATION BOARD FOR THE DUALCHANNEL SC70-6 

The 6-pin SC-70 evaluation board (EVB) shown in Figure 3 measures 0.6 in. by 0.5 in. The copper pad traces are the same as described in the previous section, _Basic Pad Patterns_ . The board allows for examination from the outer pins to the 6-pin DIP connections, permitting test sockets to be used in evaluation testing. 

For package dimensions see outline drawing SC-70 (6-Leads) (http://www.vishay.com/doc?71154) 

The thermal performance of the dual 6-pin SC-70 has been measured on the EVB, comparing both the copper and Alloy 42 leadframes. This test was then repeated using the 1-inch[2] PCB with dual-side copper coating. 

## BASIC PAD PATTERNS 

See Application Note 826, _Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFET_ s, (http://www.vishay.com/doc?72286) for the SC-70 6-pin basic pad layout and dimensions. This pad pattern is sufficient for the low-power applications for which this package is intended. Increasing the drain pad pattern (Figure 2) yields a reduction in thermal resistance and is a preferred footprint. 

A helpful way of displaying the thermal performance of the 6-pin SC-70 dual copper leadframe is to compare it to the traditional Alloy 42 version. 

Document Number:  71405 12-Dec-03 

www.vishay.com 

**1** 

**AN816** ~~CCNISSHA~~ Y **Vishay Siliconix** 

**==> picture [117 x 132] intentionally omitted <==**

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Front of Board SC70-6<br>S1 D1<br>G1 G2<br>a \ Le.<br>ei He<br>D2 S2<br>eo e<br>SC70 − 6 DUAL<br>**----- End of picture text -----**<br>


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Back of Board SC70-6<br>**----- End of picture text -----**<br>


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vishay.com<br>**----- End of picture text -----**<br>


**FIGURE  3.** 

## THERMAL PERFORMANCE 

## **Junction-to-Foot Thermal Resistance (the Package Performance)** 

Thermal performance for the dual SC-70 6-pin package is measured as junction-to-foot thermal resistance, in which the “foot” is the drain lead of the device as it connects with the body. The junction-to-foot thermal resistance for this device is typically 80 . C/W, with a maximum thermal resistance of approximately 100 C/W. This data compares favorably with another compact, dual-channel package – the dual TSOP-6 – which features a typical thermal resistance of 75 C/W and a maximum of 90 C/W. 

**==> picture [241 x 104] intentionally omitted <==**

**----- Start of picture text -----**<br>
CP COOPER LEADFRAME<br>Room Ambient 25 C Elevated Ambient 60 C<br>ee ee<br>PD - —,— TJ(max)R JA TA PD oo TJ(max)R JA TA<br>PD - 150224 [o] C [o] 7 C 25W [o] C PD ae 150224 [o] C [o] C 60W [o] C<br>PD 558 mW PD 402 mW<br>**----- End of picture text -----**<br>


Although they are intended for low-power applications, devices in the 6-pin SC-70 dual-channel configuration will handle power dissipation in excess of 0.5 W. 

## TESTING 

## **Power Dissipation** 

The typical R θ JA for the dual-channel 6-pin SC-70 with a copper leadframe is 224 C/W steady-state, compared to 413 C/W for the Alloy 42 version. All figures are based on the 1-inch[2] FR4 test board. The following example shows how the thermal resistance impacts power dissipation for the dual 6-pin SC-70 package at varying ambient temperatures. 

## _**Alloy 42 Leadframe**_ 

|ALLOY 42 LEADFRAME<br>~~CP~~<br>~~ee~~|ALLOY 42 LEADFRAME<br>~~CP~~<br>~~ee~~|
|---|---|
|**Room Ambient 25 C**<br>~~ee~~|**Elevated Ambient 60 C**|
|PD<br>TJ(max)<br>TA<br>R JA<br>PD<br>150oC<br>25oC<br>413oC W<br>PD<br>303 mW<br>~~ee~~<br>= ~~——~~<br>—|PD<br>TJ(max)<br>TA<br>R JA<br>PD<br>150oC<br>60oC<br>413oC W<br>PD<br>218 mW<br>_ ~~——~~<br>-|



To further aid the comparison of copper and Alloy 42 leadframes, Figures 4 and 5 illustrate the dual-channel 6-pin SC-70 thermal performance on two different board sizes and pad patterns. The measured steady-state values of R θ JA for the dual 6-pin SC-70 with varying leadframes are as follows: 

|LITTLE FOOT 6-PIN SC-70<br>~~Cd~~<br>~~es~~|LITTLE FOOT 6-PIN SC-70<br>~~Cd~~<br>~~es~~|LITTLE FOOT 6-PIN SC-70<br>~~Cd~~<br>~~es~~|
|---|---|---|
|~~ee~~|**Alloy 42**<br>~~ee~~<br>~~es~~<br>~~ee~~|**Copper**<br>~~ee~~<br>~~ee~~|
|1) Minimum recommended pad pattern on<br>the EVB board (see Figure 3).<br>~~ee~~|518 C/W<br>~~es~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|344 C/W<br>~~ee~~<br>~~ee~~<br>~~ee~~|
|2) Industry standard 1-inch2PCB with<br>maximum copper both sides.<br>~~ee~~|413 C/W<br>~~ee ~~<br>~~ee~~<br>~~ee~~|224 C/W<br> ~~ee~~<br>~~ee~~<br>~~ee~~|



The results indicate that designers can reduce thermal resistance ( θ JA) by 34% simply by using the copper leadframe device as opposed to the Alloy 42 version. In this example, a 174 C/W reduction was achieved without an increase in board area. If an increase in board size is feasible, a further 120 C/W ° reduction can be obtained by utilizing a 1-inch[2] . PCB area. 

The Dual copper leadframe versions have the following suffix: 

|Dual:<br>Compl.:|Si19xxEDH<br>Si15xxEDH|
|---|---|



Document Number:  71405 12-Dec-03 

www.vishay.com 

**2** 

**AN816** 

**==> picture [486 x 272] intentionally omitted <==**

**----- Start of picture text -----**<br>
Vishay Siliconix<br>Vv<br>500 500<br>400 400<br>a =n<br>300 300<br>Alloy<br>H Alloy 42 e  a  42<br>200 200<br>eae Copper Mo<br>100 100<br>WA 2A fl Copper<br>0 A 0<br>10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 1 10 100 1000 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 1 10 100 1000<br>Time (Secs) Time (Secs)<br>FIGURE  4. Dual SC70-6 Thermal Performance on EVB FIGURE  5. Dual SC70-6 Comparison on 1-inch [2]  PCB<br>Thermal Resistance (C/W) Thermal Resistance (C/W)<br>**----- End of picture text -----**<br>


## **Vishay Siliconix** 

Document Number:  71405 12-Dec-03 

www.vishay.com 

**3** 

**Application Note 826** 

Vishay Siliconix 

**==> picture [59 x 50] intentionally omitted <==**

## **RECOMMENDED MINIMUM PADS FOR SC-70: 6-Lead** 

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**----- Start of picture text -----**<br>
0.067<br>(1.702)<br>0.016 0.026 0.010<br>(0.406) (0.648) (0.241)<br>0.026 (0.648)<br>0.096 (2.438) 0.045 (1.143)<br>**----- End of picture text -----**<br>


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Recommended Minimum Pads<br>Dimensions in Inches/(mm)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Return to Index<br>**----- End of picture text -----**<br>


Return to Index 

## 

www.vishay.com 18 

Document Number: 72602 Revision: 21-Jan-08 

**Legal Disclaimer Notice** Vishay 

www.vishay.com 

**==> picture [59 x 48] intentionally omitted <==**

## **Disclaimer** 

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product.  To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. 

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications.  Such statements are not binding statements about the suitability of products for a particular application.  It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time.  All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts.  Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. 

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. 

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.  Product names and markings noted herein may be trademarks of their respective owners. 

_**© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED**_ 

Revision: 08-Feb-17 

Document Number: 91000 

**1** 



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---

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