# Bipolar (BJT) Single Transistor, NPN, 40 V, 200 mA, 1.5 W, SOT-223, Surface Mount ![Product image](https://novapart.co/image/farnell:3368672RL/) **URL**: https://novapart.co/products/SPZT3904T1G/bipolar-bjt-single-transistor-npn-40-v-200-ma-15-w **SKU**: SPZT3904T1G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT **Price**: €0.2170 **Stock**: 1000+ **Lead Time**: 2 days (indicative) ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 4Pins | | Product Range | - | | Qualification | AEC-Q101 | | Power Dissipation | 1.5W | | Transistor Mounting | Surface Mount | | Transistor Polarity | NPN | | Transition Frequency | 300MHz | | Transistor Case Style | SOT-223 | | Dc Current Gain Hfe Min | 30hFE | | Operating Temperature Max | 150°C | | Continuous Collector Current | 200mA | | Collector Emitter Voltage Max | 40V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3368672RL/) ## PZT3904T1G ## General Purpose Transistor **NPN Silicon** ## **Features** - S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable ## **http://onsemi.com** COLLECTOR • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS 2, 4 Compliant 1 BASE **MAXIMUM RATINGS Rating Symbol Value Unit** 3 Collector−Emitter Voltage VCEO 40 Vdc EMITTER Collector−Base Voltage VCBO 60 Vdc ~~[©]~~ 4 Emitter−Base Voltage VEBO 6.0 Vdc 1 2 Collector Current − Continuous IC 200 mAdc 3 ~~os~~ Stresses exceeding Maximum Ratings may damage the device. Maximum **SOT−223** Ratings are stress ratings only. Functional operation above the Recommended **CASE 318E** Operating Conditions is not implied. Extended exposure to stresses above the **STYLE 1** Recommended Operating Conditions may affect device reliability. **MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Symbol Max Unit** Total Device Dissipation (Note 1) PD 1.5 W TA = 25 ° C 12 mW/ ° C AYW 1AM Thermal Resistance R JA ° C/W Junction−to−Ambient (Note 1) 83.3 1 Thermal Resistance R JA ° C/W Junction−to−Lead #4 35 Junction and Storage Temperature TJ, Tstg −55 to +150 ° C 1AM = Specific Device Code Range A = Assembly Location ~~=i~~ Y = Year 1. FR−4 with 1 oz and 713 mm[2] of copper area. W = Work Week = Pb−Free Package (Note: Microdot may be in either location) **ORDERING INFORMATION Device Package Shipping**[†] PZT3904T1G SOT−223 1,000 / Tape & Reel (Pb−Free) SPZT3904T1G SOT−223 1,000 / Tape & Reel (Pb−Free) ~~—~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: **PZT3904T1/D** **1** © Semiconductor Components Industries, LLC, 2013 **September, 2013 − Rev. 6** ## **PZT3904T1G** ## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) |**Characteristic**|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**| |---|---|---|---|---|---| |**OFF CHARACTERISTICS**(Note 2)|||||| |Collector−Emitter Breakdown Voltage (Note 3) (IC= 1.0 mAdc, IB= 0)||V(BR)CEO|40|−|Vdc| |Collector−Base Breakdown Voltage (IC= 10�Adc, IE= 0)||V(BR)CBO|60|−|| |Emitter−Base Breakdown Voltage (IE= 10�Adc, IC= 0)||V(BR)EBO|6.0|−|| |Base Cutoff Current (VCE= 30 Vdc, VEB= 3.0 Vdc)||IBL|−|50|nAdc| |Collector Cutoff Current (VCE= 30 Vdc, VEB= 3.0 Vdc)||ICEX|−|50|| |**ON CHARACTERISTICS**(Note 3)|||||| |DC Current Gain (Note 2)
(IC= 0.1 mAdc, VCE= 1.0 Vdc)
(IC= 1.0 mAdc, VCE= 1.0 Vdc)
(IC= 10 mAdc, VCE= 1.0 Vdc)
(IC= 50 mAdc, VCE= 1.0 Vdc)
(IC= 100 mAdc, VCE= 1.0 Vdc)||HFE|40
70
100
60
30|−
−
300
−
−|−| |Collector−Emitter Saturation Voltage (Note 3)
(IC= 10 mAdc, IB= 1.0 mAdc)
(IC= 50 mAdc, IB= 5.0 mAdc)||VCE(sat)|−
−|0.2
0.3|Vdc| |Base−Emitter Saturation Voltage (Note 3)
(IC= 10 mAdc, IB= 1.0 mAdc)
(IC= 50 mAdc, IB= 5.0 mAdc)||VBE(sat)|0.65
−|0.85
0.95|Vdc| |**SMALL−SIGNAL CHARACTERISTICS**|||||| |Current−Gain − Bandwidth Product (IC= 10 mAdc, VCE= 20 Vdc, f = 100 MHz)||fT|300|−|MHz| |Output Capacitance (VCB= 5.0 Vdc, IE= 0, f = 1.0 MHz)||Cobo|−|5.0|pF| |Input Capacitance (VEB= 0.5 Vdc, IC= 0, f = 1.0 MHz)||Cibo|−|8.0|| |Input Impedance (VCE= 10 Vdc, IC= 1.0 mAdc, f = 1.0 kHz)||hie|1.0|10|k�| |Voltage Feedback Ratio (VCE= 10 Vdc, IC= 1.0 mAdc, f = 1.0 kHz)||hre|0.5|8.0|X 10−4| |Small−Signal Current Gain (VCE= 10 Vdc, IC= 1.0 mAdc, f = 1.0 kHz)||hfe|100|400|−| |Output Admittance (VCE= 10 Vdc, IC= 1.0 mAdc, f = 1.0 kHz)||hoe|1.0|40|�Mhos| |Noise Figure (VCE= 5.0 Vdc, IC= 100�Adc, RS= 1.0 k�, f = 1.0 kHz)||nF|−|5.0|dB| |**SWITCHING CHARACTERISTICS**|||||| |Delay Time|(VCC= 3.0 Vdc, VBE= −0.5 Vdc,
IC= 10 mAdc, IB1= 1.0 mAdc)|td|−|35|ns| |Rise Time||tr|−|35|| |Storage Time|(VCC= 3.0 Vdc,
IC= 10 mAdc, IB1= IB2= 1.0 mAdc)|ts|−|200|| |Fall Time||tf|−|50|| 2. FR−5 = 1.0 � 0.75 � 0.062 in. 3. Pulse Test: Pulse Width � 300 � s, Duty Cycle � 2.0%. **==> picture [484 x 99] intentionally omitted <==** **----- Start of picture text -----**
+3 V +3 V
DUTY CYCLE = 2% 10 < t1 < 500 �s t1
+10.9 V
300 ns +10.9 V 275 DUTY CYCLE = 2% 275
10 k 10 k
0
-�0.5 V
< 1 ns CS < 4 pF* 1N916 CS < 4 pF*
-�9.1 V′
< 1 ns
**----- End of picture text -----**
- Total shunt capacitance of test jig and connectors **Figure 1. Delay and Rise Time Equivalent Test Circuit** **Figure 2. Storage and Fall Time Equivalent Test Circuit** **http://onsemi.com** **2** **PZT3904T1G** ## **TYPICAL TRANSIENT CHARACTERISTICS** **==> picture [487 x 596] intentionally omitted <==** **----- Start of picture text -----**
TJ = 25°C
TJ = 125°C
10 5000
3000 VCC = 40 V
7.0 IC/IB = 10
2000
5.0
1000
700
Cibo
500
3.0
300 QT
2.0 Cobo 200
QA
100
70
1.0 50
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
REVERSE BIAS VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)
Figure 3. Capacitance Figure 4. Charge Data
500 500
300 IC/IB = 10 300 VCC = 40 V
IC/IB = 10
200 200
100 100
70 tr @ VCC = 3.0 V 70
50 50
30 30
40 V
20 20
15 V
10 10
2.0 V
7 td @ VOB = 0 V 7
5 5
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 5. Turn−On Time Figure 6. Rise Time
500 500
′
300200 IC/IB = 20 IC/IB = 10 tIB1 s = t= IsB2 - [1] /8 tf 300200 VIB1CC = I = 40 VB2
IC/IB = 20
100 100
70 70
50 IC/IB = 20 50
30 IC/IB = 10 30 IC/IB = 10
20 20
10 10
7 7
5 5
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Q, CHARGE (pC)
CAPACITANCE (pF)
TIME (ns)
r
t , RISE TIME (ns)
f
t , FALL TIME (ns)
t , STORAGE TIME (ns)′s
**----- End of picture text -----**
**Figure 7. Storage Time** **Figure 8. Fall Time** **http://onsemi.com** **3** **PZT3904T1G** ## **TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS** (VCE = 5.0 Vdc, TA = 25 ° C, Bandwidth = 1.0 Hz) **==> picture [491 x 603] intentionally omitted <==** **----- Start of picture text -----**
12 14
SOURCE RESISTANCE = 200 � f = 1.0 kHz
IC = 1.0 mA
10 IC = 1.0 mA 12
SOURCE RESISTANCE = 200 � 10 IC = 0.5 mA
8
IC = 0.5 mA IC = 50 �A
8
6 SOURCE RESISTANCE = 1.0 k IC = 100 �A
IC = 50 �A 6
4
4
2 SOURCE RESISTANCE = 500 � 2
IC = 100 �A
0 0
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100
f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (k �)
Figure 9. Figure 10.
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25 ° C)
300 100
50
200
20
10
100
70 5
50
2
30 1
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 11. Current Gain Figure 12. Output Admittance
20 10
7.0
10
5.0
5.0
3.0
2.0
2.0
1.0
1.0
0.5
0.7
0.2 0.5
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB)
�
fe
h , CURRENT GAIN
oe
h , OUTPUT ADMITTANCE ( mhos)
-4
ie
h , INPUT IMPEDANCE (k OHMS)
re
h , VOLTAGE FEEDBACK RATIO (X 10 )
**----- End of picture text -----**
**Figure 13. Input Impedance** **Figure 14. Voltage Feedback Ratio** **http://onsemi.com** **4** **PZT3904T1G** ## **TYPICAL STATIC CHARACTERISTICS** **==> picture [487 x 598] intentionally omitted <==** **----- Start of picture text -----**
2.0
TJ = +125°C VCE = 1.0 V
1.0 +25°C
0.7
-�55°C
0.5
0.3
0.2
0.1
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA)
Figure 15. DC Current Gain
1.0
T J = 25°C
0.8
IC = 1.0 mA 10 mA 30 mA 100 mA
0.6
0.4
0.2
0
0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IB, BASE CURRENT (mA)
Figure 16. Collector Saturation Region
1.2 1.0
TJ = 25°C
1.0 VBE(sat) @ IC/IB =10 0.5 +25°C TO +125°C
�VC FOR VCE(sat)
0.8 0 -�55°C TO +25°C
VBE @ VCE =1.0 V
0.6 -�0.5
-�55°C TO +25°C
0.4 -�1.0
VCE(sat) @ IC/IB =10 +25°C TO +125°C
0.2 -�1.5 �VB FOR VBE(sat)
0 -�2.0
1.0 2.0 5.0 10 20 50 100 200 0 20 40 60 80 100 120 140 160 180 200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
FE
h , DC CURRENT GAIN (NORMALIZED)
CE
V , COLLECTOR EMITTER VOLTAGE (VOLTS)
°
V, VOLTAGE (VOLTS) COEFFICIENT (mV/ C)
**----- End of picture text -----**
**Figure 17. “ON” Voltages** **Figure 18. Temperature Coefficients** **http://onsemi.com** **5** **PZT3904T1G** ## **TYPICAL CHARACTERISTICS** **==> picture [246 x 175] intentionally omitted <==** **----- Start of picture text -----**
1
10 ms
1.0 s
0.1
0.01
1 10 100
VCE, COLLECTOR−EMITTER VOLTAGE (V)
, COLLECTOR CURRENT (A)
IC
**----- End of picture text -----**
**Figure 19. Safe Operating Area** **http://onsemi.com** **6** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **SOT−223 (TO−261)** CASE 318E−04 ISSUE R **SCALE 1:1** ## DATE 02 OCT 2018 **DOCUMENT NUMBER: 98ASB42680B** **DESCRIPTION: SOT−223 (TO−261)** Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **PAGE 1 OF 2** ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2018 DATE 02 OCT 2018 ## **SOT−223 (TO−261)** CASE 318E−04 ISSUE R STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5: PIN 1. BASE PIN 1. ANODE PIN 1. GATE PIN 1. SOURCE PIN 1. DRAIN 2. COLLECTOR 2. CATHODE 2. DRAIN 2. DRAIN 2. GATE 3. EMITTER 3. NC 3. SOURCE 3. GATE 3. SOURCE 4. COLLECTOR 4. CATHODE 4. DRAIN 4. DRAIN 4. GATE STYLE 6: STYLE 7: STYLE 8: STYLE 9: STYLE 10: PIN 1. RETURN PIN 1. ANODE 1 CANCELLED PIN 1. INPUT PIN 1. CATHODE 2. INPUT 2. CATHODE 2. GROUND 2. ANODE 3. OUTPUT 3. ANODE 2 3. LOGIC 3. GATE 4. INPUT 4. CATHODE 4. GROUND 4. ANODE STYLE 11: STYLE 12: STYLE 13: PIN 1. MT 1 PIN 1. INPUT PIN 1. GATE 2. MT 2 2. OUTPUT 2. COLLECTOR 3. GATE 3. NC 3. EMITTER 4. MT 2 4. OUTPUT 4. COLLECTOR **GENERIC MARKING DIAGRAM*** AYW XXXXX 1 ~~|~~ A = Assembly Location Y = Year W = Work Week XXXXX = Specific Device Code = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98ASB42680B** Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **DESCRIPTION: SOT−223 (TO−261) PAGE 2 OF 2** ~~—ee~~ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2018 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi’s** product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. 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