# Power MOSFET, N Channel, 850 V, 54.9 A, 0.077 ohm, TO-247, Through Hole
**URL**: https://novapart.co/products/SPW55N80C3FKSA1/power-mosfet-n-channel-850-v-549-a-0077-ohm-to-247
**SKU**: SPW55N80C3FKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €5.9400
**Stock**: 1000+
**Lead Time**: 64 days (indicative)
## Description
Transistor Polarity:N Channel; Continuous Drain Current Id:54.9A; Drain Source Voltage Vds:850V; On Resistance Rds(on):0.077ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 500W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-247 |
| Drain Source Voltage Vds | 850V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 54.9A |
| Drain Source On State Resistance | 0.077ohm |
| Gate Source Threshold Voltage Max | 3V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2443414/)
## MOSFET
Metal Oxide Semiconductor Field Effect Transistor
## CoolMOS™ C3 800V
800V CoolMOS™ C3 Power Transistor SPW55N80C3
## Data Sheet
Rev. 2. 0 Final
800V CoolMOS™ C3 Power Transistor
SPW55N80C3
## 1 Description
800V CoolMOS™ C3 designed for:
- Industrial application with high DC bulk voltage
- Switching Application (i.e. active clamp forward)
## Features
New revolutionary high voltage technology
- Extreme dv/dt rated
- High peak current capability
- Qualified according to JEDEC1) for target applications
- Pb-free lead plating; RoHS compliant
- Ultra low gate charge
- Ultra low effective capacitances
## Applications
PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom, UPS and Solar.
**==> picture [92 x 236] intentionally omitted <==**
**----- Start of picture text -----**
TO-247
drain
pin 2
gate
pin 1
source
pin 3
**----- End of picture text -----**
Table 1 Key Performance Parameters
|**Parameter**|**Value**|**Unit**|
|---|---|---|
|V‡» @ TÎ ÑÈà|850|V|
|RDS(on),max|0.085|Â|
|Qg,typ|288|nC|
|ID,pulse|150|A|
|Eoss @ 400V|21.5|µJ|
|Body diode di/dt|100|A/µs|
**Type / Ordering Code Package Marking Related Links** SPW55N80C3 PG-TO 247 55N80C3 see Appendix A ~~[$f fF fF~~
Final Data Sheet
Rev. 2. 0 , 2011-10-12
2
800V CoolMOS™ C3 Power Transistor
SPW55N80C3
**==> picture [147 x 65] intentionally omitted <==**
## Table of Contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Final Data Sheet
Rev. 2. 0 , 2011-10-12
3
800V CoolMOS™ C3 Power Transistor
SPW55N80C3
**==> picture [147 x 65] intentionally omitted <==**
## 2 Maximum ratings
at TÎ = 25°C, unless otherwise specified
## Table 2 Maximum ratings
|Table 2 Maximum ratings|||||||
|---|---|---|---|---|---|---|
|Parameter|Symbol||Values||Unit|Note / Test Condition|
|||Min.|Typ.|Max.|||
|Continuous drain current1)|I ‡|||54.9|A|T† = 25°C|
|||||34.7||T† = 100°C|
|Pulsed drain current2)|I ‡‚ÔÛÐÙþ|||150|A|T† = 25°C|
|Avalanche energy, single pulse|Eƒ»|||2150|mJ|I‡ = 9.5A, V‡‡ = 50V|
|Avalanche energy, repetitive|Eƒ¸|||3.26|mJ|I‡ = 9.5A, V‡‡ = 50V|
|Avalanche current, repetitive|I ƒ¸|||9.5|A||
|MOSFET dv/dt ruggedness|dv/dt|||50|V/ns|V‡» = 0 ... 400V|
|Gate source voltage|V•»|-20||20|V|static|
|||-30||30||AC (f > 1 Hz)|
|Power dissipation (non FullPAK)
TO-247|PÚÓÚ|||500.0|W|T† = 25°C|
|Operating and storage temperature|T΂TÙÚÃ|-55||150|°C||
|Mounting torque (non FullPAK)
TO-247||||60|Ncm|M3 and M3.5 screws|
|Continuous diode forward current|I »|||47.6|A|T† = 25°C|
|Diode pulse current|I »‚ÔÛÐÙþ|||150|A|T† = 25°C|
|Reverse diode dv/dt3)|dv/dt|||4|V/ns|V‡» = 0 ... 400V, I»‡ ù I‡,
TÎ = 25°C|
|Maximum diode commutation speed|diË/dt|||100|A/µs||
> 2) Pulse width tÔ limited by TÎ ÑÈà
1) Limited by TÎ ÑÈà. Maximum duty cycle D=0.75
3) VÔþÈÏ picture [147 x 65] intentionally omitted <==**
## 3 Thermal characteristics
Table 3 Thermal characteristics TO-247
|Parameter|Symbol||Values|Values|Unit|Note / Test Condition|
|---|---|---|---|---|---|---|
|||Min.|Typ.|Max.|||
|Thermal resistance, junction - case|RÚÌœ†|||0.25|°C/W||
|Thermal resistance, junction - ambient|RÚÌœƒ|||62|°C/W|leaded|
|Soldering temperature, wavesoldering only
allowed at leads|TÙÓÐÁ|||260|°C|1.6 mm (0.063 in.) from case for
10s|
Final Data Sheet
Rev. 2. 0 , 2011-10-12
5
800V CoolMOS™ C3 Power Transistor
SPW55N80C3
**==> picture [147 x 65] intentionally omitted <==**
## 4 Electrical characteristics
at TÎ = 25°C, unless otherwise specified
## Table 4 Static characteristics
|Table 4 Static characteristics|||||||
|---|---|---|---|---|---|---|
|Parameter|Symbol||Values||Unit|Note / Test Condition|
|||Min.|Typ.|Max.|||
|Drain-source breakdown voltage|Vñ…¸ò‡»»|800|||V|V•» = 0V, I‡ = 0.25mA|
|Gate threshold voltage|V•»ñÚÌò|2.1|3|3.9|V|V‡» = V•», I‡ = 3.3mA|
|Zero gate voltage drain current|I ‡»»|||25|µA|V‡» = 800V, V•» = 0V, TÎ = 25°C|
||||150|||V‡» = 800V, V•» = 0V,
TÎ = 150°C|
|Gate-source leakage current|I •»»|||100|nA|V•» = 20V, V‡» = 0V|
|Drain-source on-state resistance|R‡»ñÓÒò||0.077|0.085|Â|V•» = 10V, I‡ = 32.6A, TÎ = 25°C|
||||0.199|||V•» = 10V, I‡ = 32.6A,
TÎ = 150°C|
|Gate resistance|R•||0.8||Â|f = 1MHz, open drain|
|Table 5 Dynamic characteristics|||||||
|Parameter|Symbol||Values||Unit|Note / Test Condition|
|||Min.|Typ.|Max.|||
|Input capacitance|CÍÙÙ||7520||pF|V•» = 0V, V‡» = 100V, f = 1MHz|
|Output capacitance|CÓÙÙ||305||pF||
|Effective output capacitance, energy
related1)|CÓñþØò||1535||pF|V•» = 0V, V‡» = 0 ... 400V|
|Effective output capacitance, time related2)|CÓñÚØò||277||pF|I‡ = constant, V•» = 0V,
V‡» = 0 ... 400V|
|Turn-on delay time|tÁñÓÒò||45||ns|V‡‡ = 400V, V•» = 13V,
I‡ = 54.9A, R• = 3.4Â|
|Rise time|tØ||21||ns||
|Turn-off delay time|tÁñÓËËò||200||ns||
|Fall time|tË||9||ns||
## Table 6 Gate charge characteristics
|Parameter|Symbol||Values|Values|Unit|Note / Test Condition|
|---|---|---|---|---|---|---|
|||Min.|Typ.|Max.|||
|Gate to source charge|QÃÙ||42||nC|V‡‡ = 480V, I‡ = 54.9A,
V•» = 0 to 10V|
|Gate to drain charge|QÃÁ||125||nC||
|Gate charge total|QÃ||288||nC||
|Gate plateau voltage|VÔÐÈÚþÈÛ||5.5||V||
> 1) CÓñþØò is a fixed capacitance that gives the same stored energy as CÓÙÙ while V‡» is rising from 0 to 400V
> 2) CÓñÚØò is a fixed capacitance that gives the same charging time as CÓÙÙ while V‡» is rising from 0 to 400V
Final Data Sheet
Rev. 2. 0 , 2011-10-12
6
800V CoolMOS™ C3 Power Transistor
SPW55N80C3
**==> picture [147 x 65] intentionally omitted <==**
## Table 7 Reverse diode characteristics
|Parameter|Symbol||Values|Values|Unit|Note / Test Condition|
|---|---|---|---|---|---|---|
|||Min.|Typ.|Max.|||
|Diode forward voltage|V»‡||0.95||V|V•» = 0V, IŒ = 54.9A, TÎ = 25°C|
|Reverse recovery time|tØØ||1050||ns|V¸ = 400V, IŒ = 54.9A,
diŒ/dt = 100A/µs|
|Reverse recovery charge|QØØ||43||µC||
|Peak reverse recovery current|I ØØÑ||78||A||
Final Data Sheet
Rev. 2. 0 , 2011-10-12
7
800V CoolMOS™ C3 Power Transistor
SPW55N80C3
**==> picture [147 x 65] intentionally omitted <==**
## 5 Electrical characteristics diagrams
## Table 8
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Power dissipation Safe operating area
600 10 [3]
1 µs
500
10 [2]
10 µs
400 100 µs
10 [1]
1 ms
300
10 ms
10 [0]
DC
200
10 [-1]
100
0 10 [-2]
0 40 80 120 160 10 [0] 10 [1] 10 [2] 10 [3]
TC [°C] VDS [V]
Ptot=f(TC) ID=f(VDS); VGS>7V; TC=25 °C; D=0; parameter: tp
[W] [A]
Ptot ID
**----- End of picture text -----**
## Table 9
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**----- Start of picture text -----**
Safe operating area Max. transient thermal impedance
10 [3] 10 [0]
1 µs
10 [2]
10 µs 0.5
10 [-1]
100 µs
10 [1] 0.2
1 ms 0.1
10 ms 0.05
10 [0]
0.02
DC 10 [-2]
0.01
single pulse
10 [-1]
10 [-2] 10 [-3]
10 [0] 10 [1] 10 [2] 10 [3] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]
VDS [V] tp [s]
ID=f(VDS);VGS>7V; TC=80 °C; D=0; parameter: tp ZthJC =f(tP); parameter: D=tp/T
[A] [K/W]
ID thJC
Z
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Final Data Sheet
Rev. 2. 0 , 2011-10-12
8
800V CoolMOS™ C3 Power Transistor
SPW55N80C3
**==> picture [147 x 65] intentionally omitted <==**
## Table 10
**==> picture [512 x 289] intentionally omitted <==**
**----- Start of picture text -----**
Typ. output characteristics Typ. output characteristics
200 120
20 V 20 V
180 10 V 10 V
100
160 8 V 8 V
7 V 7 V
140
6 V 80 6 V
120
5.5 V 5.5 V
100 5 V 60 5 V
4.5 V 4.5 V
80
40
60
40
20
20
0 0
0 5 10 15 20 0 5 10 15 20
VDS [V] VDS [V]
ID=f(VDS); Tj=25 °C; parameter: VGS ID=f(VDS); Tj=125 °C; parameter: VGS
[A] [A]
ID ID
**----- End of picture text -----**
## Table 11
**==> picture [512 x 289] intentionally omitted <==**
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Typ. drain-source on-state resistance Drain-source on-state resistance
1.00 0.25
0.90
0.80 0.20
0.70
0.60 0.15
0.50
98% typ
0.40 0.10
0.30
5 V 5.5 V 6 V 6.5 V 7 V
0.20 0.05
10 V
0.10
0.00 0.00
0 20 40 60 80 100 120 -60 -20 20 60 100 140 180
ID [A] Tj [°C]
RDS(on)=f(ID); Tj=125 °C; parameter: VGS RDS(on)=f(Tj); ID=32.6 A; VGS=10 V
[Â] [Â]
DS(on) DS(on)
R R
**----- End of picture text -----**
Final Data Sheet
Rev. 2. 0 , 2011-10-12
9
800V CoolMOS™ C3 Power Transistor
SPW55N80C3
**==> picture [147 x 65] intentionally omitted <==**
## Table 12
**==> picture [512 x 623] intentionally omitted <==**
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Typ. transfer characteristics Typ. gate charge
180 10
25 ° C
160 9 120 V 480 V
8
140
7
120
6
100
150 ° C 5
80
4
60
3
40
2
20 1
0 0
0 2 4 6 8 10 0 50 100 150 200 250 300
VGS [V] Qgate [nC]
ID=f(VGS); |VDS|=20V; VGS=f(Qgate); ID=54.9 A pulsed; parameter: VDD
Table 13
Forward characteristics of reverse diode Avalanche energy
10 [2] 2500
2000
10 [1]
1500
125 °C 25 °C
1000
10 [0]
500
10 [-1] 0
0.0 0.5 1.0 1.5 0 50 100 150 200
VSD [V] Tj [°C]
IF=f(VSD); parameter: Tj EAS=f(Tj); ID=9.5 A; VDD=50 V
[V]
[A]
ID VGS
[A] [mJ]
IF AS
E
**----- End of picture text -----**
Final Data Sheet
Rev. 2. 0 , 2011-10-12
10
800V CoolMOS™ C3 Power Transistor
SPW55N80C3
**==> picture [147 x 65] intentionally omitted <==**
## Table 14
**==> picture [512 x 289] intentionally omitted <==**
**----- Start of picture text -----**
Drain-source breakdown voltage Typ. capacitances
980 10 [5]
960
940
920
Ciss
900
10 [4]
880
860
840
820
800 10 [3]
780
760
740 Coss
720 10 [2]
Crss
700
680
660
640
10 [1]
620
600
580
560
540 10 [0]
-60 -20 20 60 100 140 180 0 100 200 300 400 500 600
Tj [°C] VDS [V]
VBR(DSS)=f(Tj); ID= 0.25 mA C=f(VDS); VGS=0 V; f=1 MHz
[V]
C [pF]
BR(DSS)
V
**----- End of picture text -----**
## Table 15
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**----- Start of picture text -----**
Typ. Coss stored energy
40
35
30
25
20
15
10
5
0
0 100 200 300 400 500 600
VDS [V]
Eoss=f(VDS)
[µJ]
oss
E
**----- End of picture text -----**
Final Data Sheet
Rev. 2. 0 , 2011-10-12
11
800V CoolMOS™ C3 Power Transistor
SPW55N80C3
## 6 Test Circuits
## Table 16 Diode_characteristics
**==> picture [382 x 153] intentionally omitted <==**
**----- Start of picture text -----**
Test circuit for diode characteristics Diode recovery waveform
ID ‘ di-/dt
ty =tg+fy
RG1 0,=Qs+ Of
ty
VDS
EESeS
GY
RG2
RRM “=
Qe aca
RG1 = RG2 Vv
**----- End of picture text -----**
## Table 17 Switching_times
**==> picture [471 x 126] intentionally omitted <==**
**----- Start of picture text -----**
Switching times test circuit for inductive load Switching times waveform
VDS
90%
VDS
VGS 10%
VGS
— td(on) tr _ td(off) tf
+> + >
+ ton >+ toff
**----- End of picture text -----**
## Table 18 Unclamped_inductive
**==> picture [422 x 118] intentionally omitted <==**
**----- Start of picture text -----**
Unclamped inductive load test circuit Unclamped inductive waveform
V
(BR)DS
VD
ID VDS
VDS VDS
ID >
**----- End of picture text -----**
Final Data Sheet
Rev. 2. 0 , 2011-10-12
12
800V CoolMOS™ C3 Power Transistor
SPW55N80C3
## 7 Package Outlines
## Figure 1 Outline PG-TO 247, dimensions in mm/inches
Final Data Sheet
Rev. 2. 0 , 2011-10-12
13
800V CoolMOS™ C3 Power Transistor
SPW55N80C3
**==> picture [147 x 65] intentionally omitted <==**
## 8 Appendix A
## Table 19 Related Links
- [IFX CoolMOS Webpage:]
http://www.infineon.com/cms/en/product/channel.html?channel=ff80808112ab681d0112ab6a628704d8
- [IFX Design Tools:]
http://www.infineon.com/cms/en/product/promopages/designtools/index.html
Final Data Sheet
Rev. 2. 0 , 2011-10-12
14
800V CoolMOS™ C3 Power Transistor
SPW55N80C3
**==> picture [147 x 65] intentionally omitted <==**
## Revision History
SPW55N80C3
## **Revision: 2011-10-12, Rev. 2.2**
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.0|2011-09-26|release of final datasheet|
||||
||||
## We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com
Edition 2011-08-01 Published by Infineon Technologies AG 81726 München, Germany © 2011 Infineon Technologies AG All Rights Reserved.
## Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.
## Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com).
## Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Final Data Sheet
Rev. 2. 0 , 2011-10-12
15
## Links
- [View this product on Novapart](https://novapart.co/products/SPW55N80C3FKSA1/power-mosfet-n-channel-850-v-549-a-0077-ohm-to-247)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/spw55n80c3fksa1/mosfet-n-ch-850v-54-9a-to-247/dp/2443414)
---
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