# Power MOSFET, N Channel, 650 V, 47 A, 0.06 ohm, TO-247, Through Hole

![Product image](https://novapart.co/image/farnell:2781202/)

**URL**: https://novapart.co/products/SPW47N65C3FKSA1/power-mosfet-n-channel-650-v-47-a-006-ohm-to-247
**SKU**: SPW47N65C3FKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €6.3900
**Stock**: 200+
**Lead Time**: 99 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:47A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.06ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Pow

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | CoolMOS C3 |
| Qualification | - |
| Power Dissipation | 415W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-247 |
| Drain Source Voltage Vds | 650V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 47A |
| Drain Source On State Resistance | 0.06ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2781202/)

**SPW47N65C3** 

## **CoolMOS[TM] Power Transistor** 

## **Features** 

- Worldwide best _R_ ds,on in TO247 

- Low gate charge 

|**Product Summary**|||
|---|---|---|
||||
|_V_DS|650|V|
||||
|_R_DS(on),max|0.07|Ω|
||||
|_Q_g,typ|255|nC|



- Extreme dv/dt rated 

- High peak current capability 

- Qualified according to JEDEC[1)  ] for target applications 

- Pb-free lead plating; RoHS compliant 

**==> picture [62 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
PG-TO247-3-1<br>**----- End of picture text -----**<br>


|**Parameter**|**Symbol **|**Conditions**|**Unit**<br>**Value**|**Unit**|
|---|---|---|---|---|
|Continuous drain current|_I_D<br>||_T_C=25 °C<br>~~-__—-———~~|A<br>47<br>30<br>141<br>~~-__—-———~~<br>~~rr~~<br>~~rr~~|A|
|||_T_C=100 °C<br> ~~-__—-———~~<br>~~rr~~|||
|Pulsed drain current2)|_I_D,pulse<br>~~rr~~|_T_C=25 °C<br>~~rr~~|||
|Avalanche energy, single pulse|_E_AS<br>~~ee~~|_I_D=3.5 A,_V_DD=50 V<br>~~ee~~|1800<br>mJ<br>1<br>~~ee~~|mJ|
|Avalanche energy, repetitive_t_AR<br>2),3)|_E_AR|_I_D=7 A,_V_DD=50 V|||
|Avalanche current, repetitive_t_AR<br>2),3)|_I_AR||A<br>7|A|
|MOSFET d_v_/d_t_ruggedness|d_v_/d_t_<br>~~rr~~|_V_DS=0...480 V<br>~~rr~~|V/ns<br>50<br>~~rr~~|V/ns|
|Gate source voltage|_V_GS<br>||static<br>~~-__—-——~~|V<br>±30<br>±20<br>~~-__—-——~~<br>~~a~~|V|
|||AC (_f_>1 Hz)<br> ~~-__—-——~~<br>~~a~~|||
|Power dissipation|_P_tot<br>~~ee~~|_T_C=25 °C<br>~~ee~~|W<br>415<br>~~ee~~|W|
|Operating and storage temperature|_T_j,_T_stg<br>~~rr~~|~~rr~~|°C<br>-55 ... 150<br>~~rr~~|°C|
|Mounting torque|~~ee~~|M3 and M3.5 screws<br>~~ee~~|60<br>Ncm<br>~~ee~~|Ncm|



Rev. 1.2 

2008-02-12 

page 1 

Please note the new package dimensions arccording to PCN 2009-134-A 

**SPW47N65C3** 

**Maximum ratings,** at _T_ j=25 °C, unless otherwise specified 

**Parameter Symbol Conditions Value Unit** Continuous diode forward current _I_ S 47 A _T_ C=25 °C Diode pulse current[2)] _I_ S,pulse 141 ~~—~~ 

|~~—~~|**Parameter**<br>Continuous diode forward current<br>Diode pulse current[2)]<br>~~—~~|~~—~~|**Symbol **<br>_I_S<br>_I_S,pulse<br>~~—~~|**Conditions**<br>_T_C=25 °C=25 °C<br>~~—~~|~~—~~|141<br>**Value**<br>47<br>~~—~~|~~—~~|**Unit**<br>A<br>~~—~~|
|---|---|---|---|---|---|---|---|---|
||**Parameter**||**Symbol **|**Conditions**||**Values**||**Unit**|
||||||**min.**|**typ.**|**max.**||
||**Thermal characteristics**||||||||
|Thermal resistance, junction - case<br>_R_thJC<br>-<br>-<br>0.3<br>K/W<br>_R_thJA<br>leaded<br>-<br>-<br>62<br>Soldering temperature,<br>wavesoldering only allowed at leads<br>_T_sold<br>1.6 mm (0.063 in.)<br>from case for 10 s<br>-<br>-<br>260<br>°C<br>Thermal resistance, junction -<br>ambient<br>~~eeeeee~~|||||||||
||**Electrical characteristics,**at_T_j=25 °C, unless otherwise specified|=25 °C, unless otherwise specified|||||||
||**Static characteristics**||||||||
||Drain-source breakdown voltage||_V_(BR)DSS|_V_GS=0 V,_I_D=250 µA|650|-|-|V|
||Gate threshold voltage||_V_GS(th)|_V_DS=_V_GS,_I_D=2.7 mA|2.1|3|3.9||
||Zero gate voltage drain current||_I_DSS|_V_DS=600 V,_V_GS=0 V,<br>_T_j=25 °C|-|0.5|25|µA|
|||||_V_DS=600 V,_V_GS=0 V,<br>_T_j=150 °C|-|50|-||
||Gate-source leakage current||_I_GSS|_V_GS=20 V,_V_DS=0 V|-|-|100|nA|
||Drain-source on-state resistance||_R_DS(on)|_V_GS=10 V,_I_D=30 A,<br>_T_j=25 °C|-|0.06|0.07|Ω|
|||||_V_GS=10 V,_I_D=30 A,<br>_T_j=150 °C|-|0.17|-||
||Gate resistance||_R_G|_f_=1 MHz, open drain|-|0.75|-|Ω|



Rev. 1.2 

2008-02-12 

page 2 

Please note the new package dimensions arccording to PCN 2009-134-A 

**SPW47N65C3** 

|~~ee~~|**Parameter**<br>~~ee~~|**Symbol **<br>~~ee~~|**Conditions**<br>~~ee~~|**min.**<br>~~ee~~|**typ.**<br>**Values**<br>~~ee~~|**max.**<br>~~ee~~|**Unit**<br>~~ee~~|
|---|---|---|---|---|---|---|---|
|~~ee~~|~~ee~~|~~ee~~|~~ee~~|~~ee~~|~~ee~~|~~ee~~|~~ee~~|
||**Dynamic characteristics**|||||||
||Input capacitance<br>Output capacitance|_C_iss<br>-<br>7000<br>-<br>_C_oss<br>-<br>2300<br>-<br>_V_GS=0 V,_V_DS=25 V,<br>_f_=1 MHz<br>~~oe~~|||||pF|
||Effective output capacitance, energy<br>related5)<br>Effective output capacitance, time<br>related6)<br>Turn-on delay time<br>Rise time<br>Turn-off delay time<br>Fall time|_C_o(er)<br>-<br>270<br>-<br>_C_o(tr)<br>-<br>490<br>-<br>_t_d(on)<br>-<br>100<br>-<br>_t_r<br>-<br>27<br>-<br>_t_d(off)<br>-<br>210<br>-<br>_t_f<br>-<br>14<br>-<br>_V_DD=400 V,<br>_V_GS=10 V,_I_D=47 A,<br>_R_G=5.6Ω<br>_V_GS=0 V,_V_DS=0 V<br>to 480 V<br>~~aa~~<br>~~Z~~<br>~~P| |~~<br>~~P~~E~~EP~~|||||ns|
||Gate Charge Characteristics|||||||
||Gate to source charge|_Q_gs||-|35|-|nC|
||Gate to drain charge|_Q_gd|_V_DD=480 V,_I_D=47 A,|-|120|-||
||Gate charge total|_Q_g|_V_GS=0 to 10 V|-|255|-||
||Gate plateau voltage|_V_plateau||-|5.5|-|V|
||**Reverse Diode**|||||||
||Diode forward voltage|_V_SD|_V_GS=0 V,_I_F=47 A,<br>_T_j=25 °C|-|0.9|1.2|V|
||Reverse recovery time|_t_rr||-|640|-|ns|
||Reverse recovery charge|_Q_rr|_V_R=480 V,_I_F=_I_S,<br>d_i_F/d_t_=100 A/µs|-|19|-|µC|
||Peak reverse recovery current|_I_rrm||-|56|-|A|



- 1) J-STD20 and JESD22 

> 2) Pulse width _t_ p limited by _T_ j,max 

> 3) Repetitive avalanche causes additional power losses that can be calculated as _P_ AV= _E_ AR* _f._ 

> 5) _C_ o(er) is a fixed capacitance that gives the same stored energy as _C_ oss while _V_ DS is rising from 0 to 80% _V_ DSS. 

- 6) _C_ o(tr) is a fixed capacitance that gives the same charging time as _C_ oss while _V_ DS is rising from 0 to 80% _V_ DSS. 

Rev. 1.2 

2008-02-12 

page 3 

Please note the new package dimensions arccording to PCN 2009-134-A 

**SPW47N65C3** 

**1 Power dissipation** 

_P_ tot=f( _T_ C) 

## **2 Safe operating area** 

_I_ D=f( _V_ DS); _T_ C=25 °C; _D_ =0 parameter: _t_ p 

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**----- Start of picture text -----**<br>
500 10 [3]<br>limited by on-state<br>resistance<br>400<br>1 µs<br>10 [2]<br>10 µs<br>100 µs<br>300<br>1 ms<br>10 [1] 10 ms<br>DC<br>200<br>10 [0]<br>100<br>10 [-1]<br>0<br>10 [0] 10 [1] 10 [2] 10 [3]<br>0 40 80 120 160<br>T  C [°C] V  DS [V]<br> [W]  [A]<br> tot I  D<br>P<br>**----- End of picture text -----**<br>


**3 Max. transient thermal impedance** 

Z(thJC)=f(tp) 

parameter: _D=t_ p/ _T_ 

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**----- Start of picture text -----**<br>
10 [0]<br>0.5<br>10 [-1]<br>0.2<br>0.1<br>0.05<br>0.02<br>10 [-2] 0.01<br>single pulse<br>10 [-3]<br>10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]<br>t  p [s]<br> [K/W]<br> thJC<br>Z<br>**----- End of picture text -----**<br>


## **4 Typ. output characteristics** 

_I_ D=f( _V_ DS); _T_ j=25 °C parameter: _V_ GS 

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200<br>20 V<br>7 V<br>| 6.5 V<br>150<br>6 V<br>100<br>5.5 V<br>50 5 V5 V<br>4.5 V<br>0<br>0 5 10 15 20 25<br>V  DS [V]<br> [A]<br>I  D<br>**----- End of picture text -----**<br>


Rev. 1.2 

2008-02-12 

page 4 

Please note the new package dimensions arccording to PCN 2009-134-A 

**SPW47N65C3** 

**5 Typ. output characteristics** 

_I_ D=f( _V_ DS); _T_ j=150 °C parameter: _V_ GS 

## **6 Typ. drain-source on-state resistance** 

_R_ DS(on)=f( _I_ D); _T_ j=150 °C parameter: _V_ GS 

**==> picture [208 x 249] intentionally omitted <==**

**----- Start of picture text -----**<br>
120<br>20 V<br>100 10 V<br>7 V<br>6.5 V<br>80 6 V<br>5.5 V<br>60<br>5 V<br>40<br>4.5 V<br>20<br>0<br>0 5 10 15 20 25<br>V  DS [V]<br> [A]<br>I  D<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
20 V<br>0.7<br>6.5 V<br>6 V<br>5.5 V<br>0.5<br>5 V<br>4.5 V<br>4 V<br>0.3<br>0.1<br>0 40 80 120 160<br>I  D [A]<br>]<br>Ω<br> [<br> DS(on)<br>R<br>**----- End of picture text -----**<br>


## **7 Drain-source on-state resistance** 

_R_ DS(on)=f( _T_ j); _I_ D=30 A; _V_ GS=10 V 

## **8 Typ. transfer characteristics** 

_I_ D=f( _V_ GS); | _V_ DS|>2| _I_ D| _R_ DS(on)max parameter: _T_ j 

**==> picture [432 x 250] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.2 200<br>25°C<br>0.16<br>150<br>0.12<br>98 %<br>100<br>150°C<br>0.08 typ<br>50<br>0.04<br>0 0<br>-50 0 50 100 150 0 2 4 6 8 10<br>T  j [°C] V  GS [V]<br>]<br>[ Ω  [A]<br>I  D<br> DS(on)<br>R<br>**----- End of picture text -----**<br>


Rev. 1.2 

2008-02-12 

page 5 

Please note the new package dimensions arccording to PCN 2009-134-A 

**SPW47N65C3** 

**9 Typ. gate charge** 

## **10 Forward characteristics of reverse diode** 

**==> picture [435 x 290] intentionally omitted <==**

**----- Start of picture text -----**<br>
V  GS=f( Q  gate);  I  D=47 A pulsed I  F=f( V  SD)<br>parameter:  V  DD parameter:  T  j<br>10 10 [3]<br>120 V<br>8<br>480 V<br>10 [2]<br>6 150 °C<br>25 °C<br>4<br>PEPE if<br>10 [1]<br>150 °C, 98%<br>2 25 °C, 98%<br>0 -fie | a 10 [0] if<br>0 40 80 120 160 200 240 0 0.5 1 1.5 2<br>Q  gate [nC] V  SD [V]<br> [V]<br> [A]<br>V  GS I  F<br>**----- End of picture text -----**<br>


## **11 Avalanche energy** 

_E_ AS=f( _T_ j); _I_ D=3.5 A; _V_ DD=50 V 

## **12 Drain-source breakdown voltage** 

_V_ BR(DSS)=f( _T_ j); _I_ D=0.25 mA 

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**----- Start of picture text -----**<br>
2000<br>1800<br>1600<br>1400<br>1200<br>1000<br>800<br>600<br>400<br>200<br>0<br> [mJ]<br> AS<br>E<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
710<br>680<br>650<br>620<br>_ 590<br>25 50 75 100 125 150 175 -60 -20 20 60 100 140 180<br>T  j [°C] T  j [°C]<br> [V]<br> BR(DSS)<br>V<br>**----- End of picture text -----**<br>


Rev. 1.2 

2008-02-12 

page 6 

Please note the new package dimensions arccording to PCN 2009-134-A 

**SPW47N65C3** 

**13 Typ. capacitances** 

_C_ =f( _V_ DS); _V_ GS=0 V; _f_ =1 MHz 

**==> picture [122 x 10] intentionally omitted <==**

**----- Start of picture text -----**<br>
14 Typ. Coss stored energy<br>**----- End of picture text -----**<br>


_E_ oss _=_ f _(V_ DS _)_ 

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**----- Start of picture text -----**<br>
10 [5] 50<br>10 [4] Ciss 40<br>10 [3] 30<br>Coss<br>10 [2] 20<br>Crss<br>10 [1] 10<br>10 [0] =p 0<br>0 100 200 300 400 500 0 200 400 600<br>V  DS [V] V  DS [V]<br>2008-02-128-02-12-02-122-12-1212<br> [µJ]<br>  [pF]<br>C  oss<br>E<br>**----- End of picture text -----**<br>


Rev. 1.2 page 7 2008-02-128-02-12-02-122-12-1212 Please note the new package dimensions arccording to PCN 2009-134-A 

**SPW47N65C3** 

## **Definition of diode switching characteristics** 

Rev. 1.2 

2008-02-12 

page 8 

Please note the new package dimensions arccording to PCN 2009-134-A 

**SPW47N65C3** 

**PG-TO-247-3-1: Outlines** 

Rev. 1.2 

2008-02-12 

page 9 

Please note the new package dimensions arccording to PCN 2009-134-A 

**SPW47N65C3** 

## **Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved.** 

## **Legal Disclaimer** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. 

## **Information** 

For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). 

## **Warnings** 

Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be . expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 

Rev. 1.2 

2008-02-12 

page 10 

Please note the new package dimensions arccording to PCN 2009-134-A 

**Data sheet erratum PCN 2009-134-A** 

**New package outlines TO-247** 

## **1** New package outlines TO-247 

Assembly capacity extension for CoolMOSTM technology products assembled in lead-free package PG-TO247-3 at subcontractor ASE (Weihai) Inc., China (Changes are marked in blue.) 

**Figure 1 Outlines TO-247, dimensions in mm/inches** 

Final Data Sheet Erratum 

Rev. 2.0, 2010-02-01 



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