# Power MOSFET, N Channel, 650 V, 47 A, 0.07 ohm, TO-247, Through Hole

![Product image](https://novapart.co/image/farnell:1056557/)

**URL**: https://novapart.co/products/SPW47N60C3FKSA1/power-mosfet-n-channel-650-v-47-a-007-ohm-to-247
**SKU**: SPW47N60C3FKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €6.3900
**Stock**: 500+
**Lead Time**: 358 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:47A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.07ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V;

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 415W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-247 |
| Drain Source Voltage Vds | 650V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 47A |
| Drain Source On State Resistance | 0.07ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1056557/)

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Cool MOS™ Power Transistor<br>V T<br>DS jmax<br>“New<br>Ω<br>•  New revolutionary high voltage technology<br>• Worldwide best Rpgion) in TO 247<br>• G<br>Ultra low gate charge p 10247<br>**----- End of picture text -----**<br>


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|Maximum Ratings||||
|---|---|---|---|
|Parameter|||Unit|
|_T_C<br>_T_C<br>Continuous drain current<br>= 25 °C|Ip|47|A|
|_t_p<br>_T_jmax<br>Pulsed drain current,<br>limited by||||
|p<br>j<br>_V_DD<br>Avalanche energy, single pulse|Eas|1800|mJ|
|_T_jmax<br>_V_DD<br>Avalanche energy, repetitive tap limited by<br>1|_E_AR|1||
|_T_jmax<br>Avalanche current, repetitive tap limited by|||A|
|j<br>Gate source voltage static<br>GatesourcevoltageAC(f>1Hz)|_V_GS<br>|<br>Pfs|oy<br>Pfs|oy<br>W|
|GatesourcevoltageAC(f>1Hz)<br>Powerdissipation,Ta=25°C|_V_GS<br>Pfs<br>Pf|±<br>Pfs<br>PfatW||
|GatesourcevoltageAC (f>1Hz)<br>Powerdissipation,Ta=25°C|_P_tot<br>Pfs<br>Pf|Pfs<br>PfatW|W|
|Powerdissipation, Ta =25°C<br>Operating and storage temperature|Pf|Pf atW|W<br>°C|
|Reverse diode dv/dt                                                 dv/dt                          15                 V/ns<br>4)|Reverse diode dv/dt                                                 dv/dt                          15                 V/ns<br>ep|Reverse diode dv/dt                                                 dv/dt                          15                 V/ns<br>ep|Reverse diode dv/dt                                                 dv/dt                          15                 V/ns|



8 - 02 - 11 

Rev. 2. 6 P 

Please note the new package dimensions arccording to PCN 2009-134-A 

_V T_ DS j 

_R_ thJC Thermal resistance, junction - case fe |e | 08 | K/W _R_ thJA Thermal resistance, junction - ambient, leaded — fe |e | 62 | Soldering temperature, wavesoldering Tsold 260 |°C 1.6 mm (0.063 in.) from case for 10s fos Jo Po | 

_V V_ Drain-source breakdown voltage || (BR)DSS GS =0v,ip=0.25ma| 600] - | - | V _V_ GS breakdown voltage Drain-Source avalanche Memos) vewerme J = | me | Gate threshold voltage µΑ _V_ GS _V_ DS Zero gate voltage drain current |/pss _V_ DS =600V, _V_ GS =OV, yA _T_ j =25°C, 0.5 25 _T_ BEE j _V V_ GS DS Gate-source leakage current ‘less | =30v, =ov | - | - | 100 | nA _V_ GS Ω Drain-source on-state resistance |Rpsion) =10V, Ip=30A, _T_ j =25°C 0.06 | 0.07 _T_ =150°C 0.16 - j _R_ G Gate input resistance || RAMHz, open Drain | - | 0.62 | - | 

8 - 02 - 11 

Rev. 2. 6 P 2 

Please note the new package dimensions arccording to PCN 2009-134-A 

_T_ 

Transconductance _g_ fs _V_ DS ≥ Ip=30A ied Input capacitance _C_ iss _V_ GS _V_ DS Output capacitance _C_ oss _f_ Reverse transfer capacitance at _C_ rss Ff oF Effective output capacitance, ee _V_ GS 7 | 45 |e _V_ DS =0V to 480V energy[related] 2) =0V, fey pF Effective output capacitance, time[related] 3) aia Turn-on delay time _t_ d(on) _V_ DD _V_ GS Rise time _t_ r _R_ G Ω Turn-off delay time _t_ d(off) _T_ j Fall time SE _t_ f ns | 7 | 8 | 2 Gate Charge Characteristics Gate to source charge _Q_ gs _V_ DD Gate to drain charge a| _Q_ gd = jt Gate charge total _V_ DD =350V, Ip=47A, 252 320 _V_ GS eee _V_ DD Gate plateau voltage Voateauy| =350V. Ip=47A_s| | Le V 

1Repetitve avalanche causes additional power losses that can be calculated asPay= _E_ AR _ *.. _f_ 

_E_ AR _f_ oss while _V_ DS is rising _C_ oss while _V_ DS is rising 

4 ISD<=ID, di/dt<=200A/us, VDClink=400V, Vpeak<VBR, DSS, Tj<Tj,max. Identical low-side and high-side switch. 

Rev. 2. 6 P age 3 200 8 - 02 - 11 

Please note the new package dimensions arccording to PCN 2009-134-A 

|j<br>Parameter<br>forwardcurrent|so|so||typ.|max.||typ.|max.||typ.|max.|Unit|
|---|---|---|---|---|---|---|
||||_min.<br>|<br>ft|_min.<br>|typ.|<br>ft|_min.<br>|max.<br>ft||
|Inverse diode continuous<br>forwardcurrent|Is<br>so|_T_C<br>=25°C<br>so<br>|=p|||<br>ft|| typ. |<br>ft|| max.<br>47<br>ft||A<br>|V|
|Inverse diode direct current,<br>pulsed<br>forwardcurrent<br>Inversediodeforwardvoltage<br>Vep|_I_SM<br>so<br>_<br>Vep|||ft<br>an<br>|-||ft<br>an<br>|ot||ft<br>an<br>|42|||
|Inversediodeforwardvoltage<br>Vep|Vep||_V_GS<br>|=p|||-|||ot|||42|||V|
|Reverse recovery time<br>Inversediodeforward voltage<br>Vep<br>P**e**ak|_t_rr<br>Vep |<br>**a**|_V_R<br>d_i_F/d_t_<br>| =p ||| - |<br>ES|| ot |<br>ES|| 42 |<br>ES||V<br>ES|
|Reverse recovery charge<br>P**e**ak|_Q_rr<br>**a**||ES|ES|ES|ES|
|Peak reverse recovery current<br>P**e**ak<br>r coverycurrent|_I_rrm<br>**a**<br>da||ES<br>fy|ES<br>fy|ES<br>fy|ES|
|P**e**ak<br>rate offall of reverse<br>r coverycurrent|**a**<br>di,/at<br>da||ES<br>fy|ES<br>fy|ES<br>fy|ES<br>A/us|



Rev. 2. 6 P age 4 200 8 - 02 - 11 

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_T_ C 

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Please note the new package dimensions arccording to PCN 2009-134-A 

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capacitances 22 Typ. C oss<br>V f V<br>DS ) Eoss= ( DS )<br>V<br>GS =0V, 1 MHz<br>**----- End of picture text -----**<br>


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Rev. 2. 6 P age 1 1 200 8 - 02 - 11 Please note the new package dimensions arccording to PCN 2009-134-A 

**47 6** 

## G 

Rev. 2. 6 P age 1 2 200 8 - 02 - 11 

Please note the new package dimensions arccording to PCN 2009-134-A 

**Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved.** 

## **Legal Disclaimer** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. 

## **Information** 

For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). 

## **Warnings** 

Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 

Rev. 2. 6 P age 1 3 200 8 - 02 - 11 Please note the new package dimensions arccording to PCN 2009-134-A 

**Data sheet erratum PCN 2009-134-A** 

**New package outlines TO-247** 

## **1** New package outlines TO-247 

Assembly capacity extension for CoolMOSTM technology products assembled in lead-free package PG-TO247-3 at subcontractor ASE (Weihai) Inc., China (Changes are marked in blue.) 

**Figure 1 Outlines TO-247, dimensions in mm/inches** 

Final Data Sheet Erratum 

Rev. 2.0, 2010-02-01 



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- [Supplier page](https://es.farnell.com/infineon/spw47n60c3fksa1/mosfet-n-coolmos-650v-47a-to-247/dp/1056557)
---

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