# Power MOSFET, N Channel, 500 V, 21 A, 0.19 ohm, TO-247, Through Hole

![Product image](https://novapart.co/image/farnell:1471815/)

**URL**: https://novapart.co/products/SPW21N50C3FKSA1/power-mosfet-n-channel-500-v-21-a-019-ohm-to-247
**SKU**: SPW21N50C3FKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €2.2000
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Power Dissipation | 208W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 208W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.19ohm |
| Transistor Case Style | TO-247 |
| Drain Source Voltage Vds | 500V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 21A |
| Drain Source On State Resistance | 0.19ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1471815/)

- Cool MOS™ Power Transistor “News • 

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|||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
|V|T|
|DS|jmax|
|“News|
|Ω|
|•|New|revolutionary|high|voltage|technology|
|Ultra|low|gate|charge|
|•|G|
|Periodic avalanche|rated|p|-T0247|
|Extreme|dv/dt rated|° es|
|•|
|Ultra low effective capacitances|Yp|ff|
|•|Improved|transconductance|"a|
|¢|Pb-free|lead|plating;|ROHS|compliant|
|*|Qualified|according|to JEDEC”|for target|applications|
|G|
|pin|||
|pin|3|
|Maximum|Ratings|
|Parameter|Unit|
|Continuous|drain|current|Ip|A|
|T|C|=|25°C|21|
|T|
|C|
|= 100 °C|Soe|
|Pulsed|drain|current,|t|p|limited|by|T|jmax|
|Avalanche|energy,|single|pulse|Ens|mJ|
|V|DD|
|Avalanche|energy,|repetitive|tap|limited|by|T|jmax|1|E|AR|1|
|V|DD|
|Avalanche|current,|repetitive|fap|limited|by|T|jmax|A|
|4|)|
|15|
|Reverse|diode dv/dt|ldvdt|=||0C~*@Y|Vins|
|V|
|Gate source voltage|||GS|oy|
|V|GS|±|
|Gate source voltage AC|(f >1Hz)|a|
|P|
|tot|
|Power dissipation,|To = 25°C|Pf|08 W|

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||||||||
|---|---|---|---|---|---|---|
|Drain|Source|voltage|slope|
|V|DS|=400V,|Ip=21A,|T|j|=125°C|

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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|R|
|thJC|
|Thermal|resistance,|junction|-|case|ee|ee|K/W|
|R|
|Thermal|resistance,|junction|- ambient,|leaded|ee|thJA|
|Soldering|temperature,|wavesoldering|Tsold|260||°C|
|1.6|mm|(0.063|in.)|from|case|for|10s|fos|Jo|po|||
|Electrical|Characteristics,|at|7j=25°C|unless|otherwise|specified|
|Parameter|Unit|
|_min.||typ.|||max. ||
|V|V|
|Drain-source|breakdown|voltage |||(BR)DSS|GS|=0v,ip=0.25ma||500]|-|||-|| V|
|V|
|GS|
|breakdown|voltage|
|Drain-Source avalanche|Memos)|cowie|||=|||ooo|||
|Gate|threshold|voltage|µΑ|V|GS|V|DS|
|Zero|gate|voltage|drain|current||/pss|V|DS|=500V,|V|GS|=0V,|yA|
|T|j|=25°C,|0.1|1|
|T|=150°C|-|100|
|j|
|V|V|
|GS|DS|
|Gate-source|leakage|current|‘less|||=20v,|=ov|||-|||-|||100|| nA|
|V|GS|Ω|
|Drain-source|on-state|resistance||Rpsion)|=10V,|Ip=13.1A,|
|T|j|=25°C|0.16|||0.19|
|T|=150°C|0.54|-|
|j|
|R|G|
|Gate|input|resistance||||RAMHz, open Drain|||-|||0.53|||-|||

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_T_ 

|Parameter|||_min.<br>|typ.|max.<br>2*Ip*RDS(on)max:|
|---|---|---|---|
|Transconductance||_g_fs<br>ee|_V_DS≥<br>| typ. |max.<br>2*Ip*RDS(on)max:<br>18<br>ee|
|Input capacitance||_C_iss|_V_GS<br>_V_DS|
|Output capacitance||_C_oss|_f_|
|Reverse transfer capacitance<br>Effectiveoutput capacitance,2)<br>energy related||_C_rss<br>||_V_GS<br>_V_DS<br>=<br>[|3]<br>-|<br>=0V,<br>aapF<br>=0V to400V|
|Turn-on delay time<br>Effective output capacitance,<br>3)<br>time related|_t_d(on)<br>SO||_V_DD<br>_V_GS<br>phy<br>=380V,<br>=0/10V,= | tof - ||
|Rise time||_t_r|_R_G<br>Ω|
|Turn-off delay time<br>Fall time||_t_d(off)<br>_t_f<br>|<br>||fe |e<br>2 | 45 ||
|Gate to source charge<br>_Q_gs<br>_V_DD<br>Gate to drain charge<br>_Q_gd<br>_V_DD<br>_V_GS<br>_V_DD<br>~~Gate Charge Characteristics~~PJserena<br>To Po<br>~~—~~<br>[so<br>Gate charge total<br>=380V, Ip=21A,<br>95<br>~~of ee~~<br>~~LE~~||||
|°J-STD20 and JESD22||||
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|2Coer) is a fixed capacitance thatgives thesame|||oss<br>_V_DS<br> stored energy as<br>while<br>is rising from 0 to80%|
|Cotisafixedcapacitancethatgives|gives|givesthesame|oss<br>_V_DS<br>chargingtimeas<br>while<br>isrisingfrom0to80%|



> 4 ISD<=ID, di/dt<=200A/us, VDClink=400V, Vpeak<VBR, DSS, Tj<Tj,max. Identical low-side and high-side switch. 

Rev. 2. 5 P age 3 200 8 - 02 - 11 Please note the new package dimensions arccording to PCN 2009-134-A 

|Electrical Characteristics, at|_T_j|= 25 °C, unless otherwise|= 25 °C, unless otherwise|= 25 °C, unless otherwise|specified|specified|
|---|---|---|---|---|---|---|
|Parameter<br>Inverse diode continuous|||Symbol<br>Is|_T_C<br>Conditions<br>=25°C||_min.|
|forward current|||||||
|Inverse diode direct current,|||_I_SM||||
|pulsed|||||||
|||||_V_GS|||
|Reverse recovery time<br>Reverse recovery charge|||_t_rr<br>_Q_rr<br>|||_V_R<br>d_i_F/d_t_<br> 80.||||
|Peak reverse recoverycurrent<br>Peakrateoffallofreverse|||_I_rrm<br>a<br>di,,/dt|||=|



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**1** 

## G 

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SPW2 **1** N50C3 

## Cinfineon 

**Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved.** 

## **Legal Disclaimer** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. 

## **Information** 

For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). 

## **Warnings** 

Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 

200 8 - 02 - 11 

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**Data sheet erratum PCN 2009-134-A** 

**New package outlines TO-247** 

## **1** New package outlines TO-247 

Assembly capacity extension for CoolMOSTM technology products assembled in lead-free package PG-TO247-3 at subcontractor ASE (Weihai) Inc., China (Changes are marked in blue.) 

**Figure 1 Outlines TO-247, dimensions in mm/inches** 

Final Data Sheet Erratum 

Rev. 2.0, 2010-02-01 



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- [Supplier page](https://es.farnell.com/en-ES/infineon/spw21n50c3fksa1/mosfet-n-500v-to-247/dp/1471815)
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