# Power MOSFET, N Channel, 650 V, 20.7 A, 0.19 ohm, TO-247, Through Hole

![Product image](https://novapart.co/image/farnell:1056555/)

**URL**: https://novapart.co/products/SPW20N60C3FKSA1/power-mosfet-n-channel-650-v-207-a-019-ohm-to-247
**SKU**: SPW20N60C3FKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.7400
**Stock**: 500+
**Lead Time**: 64 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:20.7A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.19ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Di

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 208W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-247 |
| Drain Source Voltage Vds | 650V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 20.7A |
| Drain Source On State Resistance | 0.19ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1056555/)

- Cool MOS™ Power Transistor • New revolutionary high voltage • 

- 

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V T<br>DS jmax<br>Ω<br>p G -T0247<br>**----- End of picture text -----**<br>


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- 

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## -TO247 

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T C = 25 °C 20.7<br>T<br>C<br>Pulsed drain current, t p limited by T jmax<br>Avalanche energy, single pulse Ens<br>V DD<br>Avalanche energy, repetitive tap limited by T jmax 1 E AR 1<br>V DD<br>Avalanche current, repetitive fap limited by T jmax<br>4) 15<br>Reverse diode dv/dt ldvdt =| 0”~SY<br>V<br>Gate source voltage static es GS ee<br>Gate source voltage AC (f >1Hz) a V GS ±<br>P<br>tot<br>Power dissipation, Tg = 25°C Pf 08<br>**----- End of picture text -----**<br>


Rev. 2. 5 P 

8 - 02 - 11 

Please note the new package dimensions arccording to PCN 2009-134-A 

Drain Source voltage slope _V_ DS ~~= 480 V, Ip =20.7A,~~ _T_ j ~~=125°C~~ 

_R_ thJC ~~Thermal resistance, junction - case ee ee~~ K/W _R_ thJA ~~Thermal resistance, junction - ambient, leaded ee ee~~ Soldering temperature, wavesoldering Tsold 260 | °C ~~1.6 mm (0.063 in.) from case for 10s fe J =f | 700°~~ 

_min. ~~Drain-source breakdown voltage~~ || _V_ (BR)DSS _V_ GS =0v,ip=0.25ma] 600 || typ.|| max.|| V _V_ GS breakdown voltage ~~Drain-Source avalanche H~~ eros) “tei J = | me | Gate threshold voltage µΑ _V_ GS _V_ DS _V V_ Zero gate voltage drain current | /Ipss DS =600V, GS ==0V, _T_ j =25°C, 0.5 25 _T_ j ~~Gate-source~~ Pie _V_ GS _V_ DS lets ~~leakage current ‘~~ Igsg | =30v, =ov | - | - 100 ~~|~~ _V_ GS Ω Drain-source on-state resistance | Rps(on) =10V, Ip=13.1A, _T_ j =25°C 0.16 | 0.19 _T_ =150°C 0.43 - j _R_ G ~~Gate input resistance || IMHz, open Drain | - | 0.54] - |~~ 

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Rev. 2 .5 P 2 

Please note the new package dimensions arccording to PCN 2009-134-A 

|_T_<br>Electrical Characteristics<br>, at<br>= 25 °C, unless otherwise|specified||
|---|---|---|
|Transconductance<br>_g_fs<br>_V_DS≥<br>Parameter<br>Sympot] —Conatone |__Vatues_Unit<br>_min.<br>| typ. |max.<br>2*ID"RDS(on)max:<br>17.5<br>ee|||
|Input capacitance<br>_C_iss<br>_V_GS<br>_V_DS|||
|_f_<br>Output capacitance<br>_C_oss|||
|Reverse transfer capacitance<br>_C_rss<br>_V_GS<br>_V_DS<br>|<br>Effectiveoutputcapacitance,2)<br>=0V,<br>energy related<br>=0V to480V|—- | 9 | -|<br>fepF||
|Effective output capacitance,<br>3)<br>time related|fey||
|Turn-on delay time<br>_t_d(on)<br>_V_DD<br>_V_GS<br>=380V,<br>=0/13V,<br>10|||
|_R_G<br>Ω<br>Ip=20.7A,<br>=3.6<br>,|||
|_T_j<br>=125|||
|Rise time<br>_t_r<br>_V_DD<br>_V_GS|||
|_R_G<br>Ω<br>Turn-off delay time<br>_t_d(off)|||
|Fall time<br>_t_f<br>Gate to source charge<br>_Q_gs<br>_V_DD<br>Gate to drain charge<br>_Q_gd<br>_V_DD<br>_V_GS<br>_V_DD<br>|<br>|<br>45 | 12<br>Gate Charge Characteristicsed<br>~~—~~<br>fs<br>~~Gate~~ charge total<br>=480V, Ip=20.7A,<br>87<br>114<br>~~of ee |~~|||
|°J-STD20 and JESD22|||
|_E_AR _f_<br>1Repetitve avalanche causes additional powerlosses thatcan be calculated asPay=_<br>*..|||
|oss<br>2Coer) is a fixed capacitance thatgivesthesame stored energy as|_V_DS<br>while<br>is rising from|0 to80%|
|_C_oss<br>_V_DS<br>Con is afixed capacitance thatgivesthesame charging time as<br>while<br>is rising from||0 to80%|
|4ISD<=ID, di/dt<=400A/us, VDClink=400V, Vpeak<VBR, DSS, Tj<Tj,max.|||
|Identical low-side and high-side switch.|||



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|Electrical Characteristics, at|_T_j|= 25 °C, unless|= 25 °C, unless|unless|
|---|---|---|---|---|
|Parameter<br>Inverse diode continuous|||Symbol<br>Is|_T_C<br>Conditions<br>=25°C|
|forward current|||||
|Inverse diode direct current,|||_I_SM||
|pulsed|||||
|||||_V_GS|
|Reverse recovery time|||_t_rr|_V_R|
|Reverse recovery charge<br>Peak reverse recoverycurrent|||_Q_rr<br>_I_rrm|d_i_F/d_t_|



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_T_ C 

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V T f<br>DS ); = j  =150°C Rpsvon)= (/p)<br>V T V<br>f, = 10 us, GS parameter: j =150°C, GS<br>Ω<br>eH “ENE<br>a<br>e e<br>TMs CRE<br>is HELE pS<br>00 nn 2 : 3<br>TY WAT re teee<br>AMMAN Sa<br>TVA) SA<br>“ i TI ATT)pat see | 2 [LE]<br>VAL RT<br>0 2 4 6 8 10 12 14 16 18 20 2; VY 25 0 5 10 15 20 25 30 A 40<br>—_ V DS —e |p<br>Drain-source on-state resistance 8 Typ. transfer characteristics<br>= f (7}) Ipb=f( Ves )i Vp 2X Ip X Rosionymax<br>V<br>: /p = 13.1A, GS =10V parameter: f, = 10 us<br>SPW20N60C3<br>11<br>Ω<br>TMOOIOn 6s) 80<br>aoe -e<br>TTTTT ey<br>EEL LLL s |<br>Boog EE<br>"CECE * fp<br>wt LET LET LE “TTT TTF<br>tC ar t we<br>TTLee TTT LL<br>a eee | tt TTY TET]<br>leesLT 1 y,<br>Ta EL<br>-60 -20 20 60 100 °c 180 0 1 2 3 4 5 6 7 V 9<br>—_—_ > T j —_—_ > V GS<br>5                                                                     P age 6 200 8 -0 2 - 11<br>**----- End of picture text -----**<br>


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_V_ GS 

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**0 6** 

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**0 6** SPW2 N 0C3 

## Cinfineon 

**Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved.** 

## **Legal Disclaimer** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. 

## **Information** 

For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). 

## **Warnings** 

Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 

200 8 -0 2 - 11 

Rev. 2. 5 P age 1 2 200 8 -0 2 - 11 Please note the new package dimensions arccording to PCN 2009-134-A 

**Data sheet erratum PCN 2009-134-A** 

**New package outlines TO-247** 

## **1** New package outlines TO-247 

Assembly capacity extension for CoolMOSTM technology products assembled in lead-free package PG-TO247-3 at subcontractor ASE (Weihai) Inc., China (Changes are marked in blue.) 

**Figure 1 Outlines TO-247, dimensions in mm/inches** 

Final Data Sheet Erratum 

Rev. 2.0, 2010-02-01 



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- [Supplier page](https://es.farnell.com/infineon/spw20n60c3fksa1/mosfet-n-coolmos-to-247/dp/1056555)
---

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