# Power MOSFET, N Channel, 560 V, 16 A, 0.28 ohm, TO-247, Through Hole

![Product image](https://novapart.co/image/farnell:1664136/)

**URL**: https://novapart.co/products/SPW16N50C3FKSA1/power-mosfet-n-channel-560-v-16-a-028-ohm-to-247
**SKU**: SPW16N50C3FKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.5100
**Stock**: 50+
**Lead Time**: 99 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:560V; On Resistance Rds(on):0.25ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation P

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 160W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-247 |
| Drain Source Voltage Vds | 560V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 16A |
| Drain Source On State Resistance | 0.28ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1664136/)

- Cool MOS™ Power Transistor “News • New revolutionary high voltage • 

**==> picture [482 x 599] intentionally omitted <==**

**----- Start of picture text -----**<br>
|||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
|V|T|
|DS|jmax|
|“News|
|Ω|
|•|New|revolutionary|high|voltage|technology|
|Ultra|low|gate|charge|
|•|G|
|Periodic avalanche|rated|p|-T0247|
|Extreme|dv/dt rated|° es|
|•|
|Ultra low effective capacitances|Yp|ff|
|•|Improved|transconductance|"a|
|¢|Pb-free|lead|plating;|ROHS|compliant|
|*|Qualified|according|to JEDEC”|for target|applications|
|G|
|pin|||
|pin|3|
|Maximum|Ratings|
|Parameter|Unit|
|Continuous|drain|current|Ip|A|
|T|C|=|25°C|16|
|T|
|C|~ 100 °C|ae|
|Pulsed|drain|current,|t|p|limited|by|T|jmax|
|Avalanche|energy,|single|pulse|Eas|460|mJ|
|V|DD|
|Avalanche|energy,|repetitive|tap|limited|by|T|jmax|1|E|AR|0.64|
|V|DD|
|Avalanche|current,|repetitive|fap|limited|by|T|jmax|A|
|4|)|
|15|
|Reverse|diode dv/dt|ldvdt|=||0”:~SY|Vins|
|V|
|Gate source voltage|||GS|ev|
|Gate source voltage AC|(f >1Hz)|a|V|GS|±|
|P|
|tot|
|Power dissipation,|Tg = 25°C|Pf|t60—|sd|WwW|

**----- End of picture text -----**<br>


- 

- 

- 

- 

Rev. 2. 5 P age 1 200 8 - 02 - 11 

Please note the new package dimensions arccording to PCN 2009-134-A 

## Source voltage slope ~~=400V,Ip=16A,~~ _T_ j ~~=125°C~~ 

_V_ DS _T_ j 

_R_ thJC ~~Thermal resistance, junction - case Pf | | 78 |~~ _R_ Thermal resistance, junction - ambient, leaded ~~ee~~ thJA Soldering temperature, wavesoldering Tsold 260 1.6 mm (0.063 in.) from case for 10s fos Jo po | 

|Parameter<br>Drain-sourcebreakdownvoltage||||||||=0v,ip=0.25ma|||typ.|max.|||typ.|max.|||typ.|max.||Unit<br>|<br>|V|
|---|---|---|---|---|---|---|
||||_min.<br>|<br>=0v,ip=0.25ma|500]|_min.<br>|typ.|<br>500]-||_min.<br>|max.|<br>|-|||
|Drain-sourcebreakdownvoltage||<br>Drain-Sourceavalanche<br>Hemos)|_V_(BR)DSS<br>||<br>Hemos)|_V_GS<br>||=0v,ip=0.25ma|<br>Hemos)vewireeJ||<br>=0v,ip=0.25ma|500]<br>J=||| typ. |<br>500]-|<br>|ooo|| max.|<br>|-|<br>|||<br>|V|
|Drain-source breakdown voltage||<br>Drain-Sourceavalanche<br>Hemos)<br>breakdown voltage|||<br>Hemos)|_V_GS<br>|| =0v,ip=0.25ma|<br>Hemos)vewireeJ|=0v,ip=0.25ma| 500]<br>J=||500] - |<br>|ooo|| - |<br>|||
|Drain-Sourceavalanche<br>Hemos)<br>Gate threshold voltage|Hemos)|µΑ _V_GS _V_DS<br>Hemos) vewiree J|J = ||| ooo||||
|Zero gate voltage drain current<br>Gate-sourceleakagecurrent<br>‘less||/pss<br>‘less||_V_DS<br>_V_GS<br>_T_j<br>_T_j<br>=500V,<br>=0V,<br>=25°C,<br>=150°C<br>|=20v,=ov|||-||0.1<br>-<br>|-||1<br>100<br>|100||yA<br>|nA|
|Gate-sourceleakagecurrent<br>‘less|‘less||_V_GS<br>_V_DS<br>|=20v,=ov|||-|||-|||100|||nA|
|Gate-source leakage current<br>‘less<br>Drain-source on-state resistance |<br>Gateinputresistance|‘less |<br>|Rpsion)<br>|||_V_GS<br>_T_j<br>_T_j<br>| =20v, =ov |<br>=10V, Ip=10A,<br>=25°C<br>=150°C<br>||RAMHz,openDrain||| - |<br>|-||| - |<br>0.25 |<br>0.68<br>|15||| 100 |<br>| 0.28<br>-<br>|-||Ω<br>|nA<br>||
|Gateinputresistance|_R_G<br>|||||RAMHz,openDrain|||-|||15|||-|||



Rev. 2. 5 P a ge 2 200 8-02 - 11 

Please note the new package dimensions arccording to PCN 2009-134-A 

_T_ 

|Transconductance<br>Input capacitance|_g_fs<br>_V_DS≥<br>_C_iss<br>_V_GS<br>_V_DS<br>2*Ip*RDS(on)max:<br>ae|_min.<br>|<br> ee|_min.<br>| typ. |<br>14<br>ee|_min.<br>|max.<br>ee|
|---|---|---|---|---|
|Output capacitance|_f_<br>_C_oss||||
|Reverse transfer capacitance<br>Effective<br>output capacitance,2)<br>energy related|_C_rss<br>_V_GS<br>_V_DS<br>|<br>=0V,<br>=0V to 400V|2 | 30 |<br>fepF|||
|Turn-on delay time<br>Rise time<br>Turn-off delay time<br>Fall time<br>Effective output capacitance,<br>3)<br>time related|_t_d(on)<br>_V_DD<br>_V_GS<br>_R_G<br>Ω<br>_t_r<br>_t_d(off)<br>_t_f<br>SO<br>=380V,<br>=0/10V,=<br>eeee <br>||fy<br>= | tof - |<br> ee<br>|<br>0 ||||
|Gate Charge Characteristics|||||
|Gate to source charge<br>Gate to drain charge<br>~~Gate~~ charge total|_Q_gs<br>_V_DD<br>_Q_gd<br>_V_DD<br>_V_GS<br>_V_DD<br>pf vere<br>a<br>=380V, Ip=16A,<br>~~of ee ~~|= | 6|e<br> ~~|~~|||



calculated asPay= E_ AR *.. _f_ oss while _V_ DS is rising oss while _V_ DS is rising 

4 ISD<=ID, di/dt<=400A/us, VDClink=400V, Vpeak<VBR, DSS, Tj<Tj,max. Identical low-side and high-side switch. 

Rev. 2.5 Pa ge 3 200 8 - 02 - 11 Please note the new package dimensions arccording to PCN 2009-134-A 

|Electrical Characteristics, at|_T_j|= 25 °C, unless|= 25 °C, unless|unless|
|---|---|---|---|---|
|Parameter<br>Inverse diode continuous|||Symbol<br>Is|_T_C<br>Conditions<br>=25°C|
|forward current|||||
|Inverse diode direct current,|||_I_SM||
|pulsed|||||
|||||_V_GS|
|Reverse recovery time|||_t_rr|_V_R|
|Reverse recovery charge<br>Peak reverse recoverycurrent|||_Q_rr<br>_I_rrm|d_i_F/d_t_|



8 - 02- 11 

Rev. 2. 5 Pa ge 4 200 8 - 02- 11 Please note the new package dimensions arccording to PCN 2009-134-A 

_T_ C 

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400 ECEE NCEE<br>eT NEEL<br>BERRA<br>otHENTET<br>SN<br>rN<br>(LEE TN<br>0 20 40 60 80 100 120 °C<br>— T C<br>tot<br>P<br>**----- End of picture text -----**<br>


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V T<br>DS ); j  =25°C<br>V<br>f, = 10 us, GS<br>20v<br>mm<br>| ay<br>— g—<br>Ze<br>is<br>= AR Vi ook<br>Pf fl]<br>0 5 10 15 Vv<br>—__» > V DS<br>**----- End of picture text -----**<br>


Rev. 2. 5 P 

8 - 02-11 

Please note the new package dimensions arccording to PCN 2009-134-A 

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V T<br>Ip=Ff( DS ); = j  =150°C<br>parameter: f, = 10 us,<br>**----- End of picture text -----**<br>


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Rpsvon)= f (/p)<br>T V<br>narameter: j =150°C, GS<br>2<br>Ω<br>**----- End of picture text -----**<br>


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_V_ GS 

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Ω PEE EEE<br>pe<br>Jit<br>e- C OEEEEEECEEE<br>“L E TT ttt yer<br>a<br>ce e<br>BEEEEEEEeeee<br>°%o -20 20 60 100 °c<br>— T j<br>**----- End of picture text -----**<br>


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Rev. 2. 5 P 

8 - 02 - 11 

Please note the new package dimensions arccording to PCN 2009-134-A 

_V_ GS 

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FEE y<br> EETT Ae<br>V DS max<br>V DS max<br>GS<br>V<br>**----- End of picture text -----**<br>


## _T_ ≤ 

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Rev. 2.5 P 

_T_ j 

8 - 02-11 

Please note the new package dimensions arccording to PCN 2009-134-A 

## _V_ (BR)DSS = f ( _T_ Par=f( _f_ 

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V<br>DS )<br>V<br>GS =0V, &1 MHz<br>4<br>a a<br>——_——W— a<br>e ———————————e<br>a a<br>a a<br>—<br>ne<br>ow— — — t<br>a a a<br>0100 200 300 V<br>—_P V DS<br>**----- End of picture text -----**<br>


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16 Typ. C oss<br>f V<br>Eoss= ( DS )<br>**----- End of picture text -----**<br>


Rev. 2. 5 P 

Please note the new package dimensions arccording to PCN 2009-134-A 

_V_ DS 8 - 02 - 11 

8 - 02 - 11 

Rev. 2. 5 P age 9 200 8 - 02 - 11 Please note the new package dimensions arccording to PCN 2009-134-A 

**6** 

## G 

Rev. 2 .5 P age 10 200 8 - 02 - 11 Please note the new package dimensions arccording to PCN 2009-134-A 

**6** SPW1 N50C3 

**Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved.** 

## **Legal Disclaimer** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. 

## **Information** 

For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com ). 

## **Warnings** 

Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 

Rev. 2. 5 P age 11 200 8 - 02 - 11 

Please note the new package dimensions arccording to PCN 2009-134-A 

**Data sheet erratum PCN 2009-134-A** 

**New package outlines TO-247** 

## **1** New package outlines TO-247 

Assembly capacity extension for CoolMOSTM technology products assembled in lead-free package PG-TO247-3 at subcontractor ASE (Weihai) Inc., China (Changes are marked in blue.) 

**Figure 1 Outlines TO-247, dimensions in mm/inches** 

Final Data Sheet Erratum 

Rev. 2.0, 2010-02-01 



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- [Supplier page](https://es.farnell.com/infineon/spw16n50c3fksa1/mosfet-n-to-247/dp/1664136)
---

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