# Power MOSFET, N Channel, 600 V, 15 A, 0.28 ohm, TO-247, Through Hole

![Product image](https://novapart.co/image/farnell:2480717/)

**URL**: https://novapart.co/products/SPW15N60C3FKSA1/power-mosfet-n-channel-600-v-15-a-028-ohm-to-247
**SKU**: SPW15N60C3FKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.7700
**Stock**: 10+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.25ohm; Available until stocks are exhausted Alternative available

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (17-Jan-2023) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 156W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-247 |
| Drain Source Voltage Vds | 600V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 15A |
| Drain Source On State Resistance | 0.28ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2480717/)

- Cool MOS™ Power Transistor "Newt • New revolutionary high voltage • 

- 

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- 

- 

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|Maximum Ratings||||
|---|---|---|---|
|Parameter|||Unit|
|_T_C<br>_T_C<br>Continuous drain current<br>= 25°C<br>-100 °C|Ip<br>mg|15<br>mg|A|
|_t_p<br>_T_jmax<br>Pulsed drain current,<br>limited by||||
|p<br>j<br>_V_DD<br>Avalanche energy, single pulse|Ens|460|mJ|
|_T_jmax<br>_V_DD<br>Avalanche energy, repetitive tap limited by<br>1|_E_AR|||
|_T_jmax<br>Avalanche current, repetitive tap limited by<br>Reversediodedvidt<br>dvdt|dvdt|||<br>sd|A<br>Wins|
|j<br>4)<br>Reversediodedvidt<br>dvdt|dvdt||15<br>|<br>sd<br>ee|Wins|
|Gate source voltage static<br>Reversediode dvidt<br>dvdt|_V_GS<br>dvdt |<br>ee||<br>sd <br>ee<br>ee|Wins|
|GatesourcevoltageAC (f>1Hz)<br>Powerdissipation,Tg=25°C|_V_GS<br>PT<br>a|±<br>ee<br>PT<br>eeeW|W|
|Powerdissipation,Tg=25°C|_P_tot<br>a|eeeW|W|
|Powerdissipation, Tg=25°C<br>Operating and storage temperature|a|eeeW|W<br>°C|



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|||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|V|T|
|DS|j|
|Thermal|Characteristics|
|Parameter|Unit|
|_min.||typ.|||max.|
|R|
|thJC|
|Thermal|resistance,|junction|- case|fe||e|||08|||K/W|
|R|
|thJA|
|Thermal|resistance,|junction|- ambient,|leaded|—|fe||e|||62|||
|Soldering|temperature,|wavesoldering|Tsold|260||°C|
|1.6 mm (0.063 in.) from case for 10s|fos|Jo|Po|||
|Electrical|Characteristics,|at|7j=25°C|unless|otherwise|specified|
|Parameter|Unit|
|_min.||typ.|||max. ||
|V|V|
|Drain-source|breakdown|voltage |||(BR)DSS|GS|=0v,ip=0.25ma||600]|-|||-|| V|
|V|
|GS|
|breakdown|voltage|
|Drain-Source avalanche|Memos)|comers|J|=|||me|||
|Gate|threshold|voltage|µΑ|V|GS|V|DS|
|Zero|gate|voltage|drain|current||/pss|V|DS|=600V,|V|GS|=OV,|yA|
|T|j|=25°C,|0.1|1|
|T|=150°C|-|100|
|j|
|V|V|
|GS|DS|
|Gate-source|leakage|current|‘less|||=30v,|=ov|||-|||-|||100|| nA|
|V|GS|Ω|
|Drain-source|on-state|resistance||Rpsion)|=10V,|Ip=9.4A,|
|T|j|=25°C|0.25|||0.28|
|T|=150°C|0.68|-|
|j|
|R|G|
|Gate|input|resistance||||RAMHz, open Drain ||-|||1.23|||-|||

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_T_ 

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|||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Transconductance|g|fs|V|DS|≥|11.9|S)|
|ae|
|Input capacitance|C|iss|V|GS|V|DS|
|||sev,|=25v,||=|||1660|||=|oF|
|Output capacitance|C|oss|f|
|P| FM|=|||40]|
|Reverse transfer capacitance|C|rss|
|||=|[| 40 ||- ||
|V|
|Effective|output|capacitance,|GS|
|V|DS|=0V|to|480V|
|energy|[related]|2)|=0V,|fe pF|
|Effective|output|capacitance,|
|time|[related]|3)|aia|
|Turn-on delay time|SO|t|d(on)|V|DD|=380V,|V|GS|=0/10V,|—|-|||tof|-|| ns|
|Rise time|t|r|R|G|Ω|
|Turn-off delay time|t|d(off)|
|||=|||50|||80|
|Fall time|t|f|
|||2|||5|||107|
|Gate to source charge|Q|gs|V|DD|
|Gate to drain charge|Gate Charge Characteristics|[meee|Q|gd|TTfe|||
|Gate|charge|total|V|DD|=480V,|Ip=15A,|63|
|V|
|GS|
|aa|
|V|DD|
|°J-STD20|and|JESD22|
|1Repetitve|avalanche|causes|additional|power losses|that can|be|calculated|asPay=|E|AR|_|*..|f|

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_E_ AR _f_ oss while _V_ DS is rising _C_ oss while _V_ DS is rising 

4 ISD<=ID, di/dt<=400A/us, VDClink=400V, Vpeak<VBR, DSS, Tj<Tj,max. Identical low-side and high-side switch. 

Rev. 2. 5 P age 3 200 8 - 02 - 11 

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|j<br>Parameter|Symia|Contone|Symia|Contone|||__vatos—_<br>|typ.|max.||__vatos—_<br>|typ.|max.||__vatos—_<br>|typ.|max.|—_Unit|
|---|---|---|---|---|---|---|
|||||__vatos<br>_min.<br>||__vatos<br>_min.<br>|typ.||__vatos—_<br>_min.<br>|max.||
|Parameter<br>Inverse diode continuous<br>forward current|Symia|Contone<br>Is|_T_C<br>Symia|Contone |<br>=25°C<br>|=0V.es_|=||__vatos<br>||__vatos<br>| typ. ||__vatos—_<br>| max.<br>15|—_Unit<br>|A<br>LV|
|Inverse diode direct current,<br>pulsed<br>Inversediodeforwardvoltage|Vsp|_I_SM<br>|Vsp||||=|||1|||12||
|Inversediodeforwardvoltage|Vsp||Vsp|<br>||_V_GS<br>|=0V.es_|=<br>4805,<br>|||=|<br>|-|||1|<br>|460|||12<br>|-|LV<br>[ns|
|Reverse recovery time<br>Inversediodeforward voltage |Vsp|_t_rr<br>|Vsp |<br>||_V_R<br>d_i_F/d_t_<br>| =0V.es_ |=<br> 4805,<br>|<br>ee <br>—-||= |<br>|-||| 1 |<br>|460||| 12<br>|-|LV<br>[ns|
|Reverse recovery charge|_Q_rr<br>| <br>ee<br>a||| - |<br> ee<br>—-||| 460|<br>ee<br>|5||| -<br>ee0<br>|-IA|[ns<br>0<br>IA|
|Peak reverse recovery current|_I_rrm<br>a||—-|||5|||-IA|IA|
|Peak rate offall of reverse<br>recovery current|a<br>di-/at||—- ||| 5 ||| - IA|IA<br>A/us|



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## _T_ ≤ 

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T j )<br>=7.5A, V DD =50V<br>NEE<br>\<br>\ ~~<br>40 60 80 100 120 °C<br>i T j<br>**----- End of picture text -----**<br>


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## _V_ (BR)DSS = f ( _T_ 

## _f_ 

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**5 6** 

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**5 6** SPW1 N 0C3 

## **Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved.** 

## **Legal Disclaimer** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. 

## **Information** 

For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). 

## **Warnings** 

Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 

Rev. 2. 5 P age 11 200 8 - 02 - 11 

Please note the new package dimensions arccording to PCN 2009-134-A 

**Data sheet erratum PCN 2009-134-A** 

**New package outlines TO-247** 

## **1** New package outlines TO-247 

Assembly capacity extension for CoolMOSTM technology products assembled in lead-free package PG-TO247-3 at subcontractor ASE (Weihai) Inc., China (Changes are marked in blue.) 

**Figure 1 Outlines TO-247, dimensions in mm/inches** 

Final Data Sheet Erratum 

Rev. 2.0, 2010-02-01 



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- [Supplier page](https://es.farnell.com/infineon/spw15n60c3fksa1/mosfet-n-ch-600v-15a-to-247-3/dp/2480717)
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