# Power MOSFET, N Channel, 650 V, 1.8 A, 3 ohm, TO-251, Through Hole

![Product image](https://novapart.co/image/farnell:1664132/)

**URL**: https://novapart.co/products/SPU02N60C3BKMA1/power-mosfet-n-channel-650-v-18-a-3-ohm-to-251
**SKU**: SPU02N60C3BKMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4320
**Stock**: 10+

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:1.8A; Drain Source Voltage Vds:650V; On Resistance Rds(on):2.7ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation P

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 25W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-251 |
| Drain Source Voltage Vds | 650V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 1.8A |
| Drain Source On State Resistance | 3ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1664132/)

- Cool MOS™ Power Transistor • 

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Rev. 2.6                                                                 P 

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Drain Source voltage slope _V_ DS ~~=480V, Ip=1.8A,~~ _T_ j ~~=125°C~~ 

_R_ thJC Thermal resistance, junction - case fe fe | 8 K/W _R_ thJA Thermal resistance, junction - ambient, leaded fe |e | 8 SMD version, device on PCB: RihgA @ min. footprint 75 ~~@ 6 cm? cooling area 2) met)~~ *) ~~Soldering~~ 1.6 mm (0.063 ~~temperature,~~ in.) from case for 10s ~~fe J =f | 200° °C~~ Electrical Characteristics, at 7j=25°C unless otherwise specified Parameter Unit _min. ~~Drain-source breakdown voltage~~ || _V_ (BR)DSS _V_ GS =0v,ip=0.25ma| 600 || typ.|| max.|| V _V_ GS breakdown voltage ~~Drain-Source avalanche H~~ eros) eirowsa | = | me | Gate threshold voltage µΑ _V_ GS _V_ DS _V_ DS _V_ GS Zero gate voltage drain current | /Ipss =600V, ==0V, UA _T_ j _T_ j ~~m~~ e fa)=25°C, fe]0.5 1 _V V_ GS DS ~~Gate-source leakage current ‘~~ icsgs | =30v, =ov | - | - | 100 ~~| nA~~ Drain-source on-state resistance | Rps(on) _V_ GS =10V, Ip=1.1A, Ω _T_ =25°C 2.7 3 j _T_ =150°C 7.3 - j _R_ G ~~Gate input resistance || IMHz, open Drain | - | 9 | - |~~ 

*) TO252: reflow soldering, MSL3; TO251: wavesoldering 

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_T_ 

|Parameter|Parameter|_min.<br>|typ.|max.<br>2*Ip*RDS(on)max:|_min.<br>|typ.|max.<br>2*Ip*RDS(on)max:||Unit|
|---|---|---|---|---|---|
|Transconductance<br>Input capacitance<br>Output capacitance<br>Reverse transfer capacitance<br>Effective output capacitance,<br>3)<br>energy related||_g_fs<br>_V_DS≥<br>_C_iss<br>_V_GS<br>_V_DS<br>_f_<br>_C_oss<br>_C_rss<br>_V_GS<br>_V_DS<br>| typ. |max.<br>2*Ip*RDS(on)max:<br>1.75<br>ee<br>|<br>ov,<br>25, | =| 200|<br>P| =iMhe<br>= |oe<br>|<br>2 [4]<br>=0V,<br>fetpF<br>=0V to 480V||pF|S<br>oF<br>pF|
|Turn-on delay time<br>Effectiveoutputcapacitance,4)<br>time related||_t_d(on)<br>_V_DD<br>_V_GS<br>a<br>=350V,<br>=0/10V,-|ae<br>- | 6] - |ns||ns|
|Rise time<br>Turn-off delay time<br>Fall time||_R_G<br>Ω<br>_t_r<br>_t_d(off)<br>_t_f<br>|<br>||= [ee | 70,<br>|<br>12 | 30|||
|Gate to source charge<br>Gate to drain charge<br>Gate Charge Characteristics <br>Gate charge total||_Q_gs<br>_V_DD<br>_Q_gd<br>_V_DD<br>_V_GS<br>_V_DD<br> [|<br>=azov.ip-tea <br>Oe <br>=420V, Ip=1.8A,<br>~~oo seer ~~|| - «| 16 |<br> Ea<br>9.5<br>12.5<br> ~~[LS~~||(nc|



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oss _V_ DS oss _V_ DS 

5 ISD<=ID, di/dt<=400A/us, VDClink=400V, Vpeak<VBR, DSS, Tj<Tj,max. Identical low-side and high-side switch. 

Rev. 2.6                                                                P 

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|Electrical Characteristics, at|_T_j|= 25 °C, unless otherwise|
|---|---|---|
||||
|Inverse diode direct current,<br>pulsed<br>Reverse recovery time<br>Reverse recovery charge<br>Peak reverse recoverycurrent<br>Inverse diode continuous<br>~~forward current~~<br>~~Inverse~~ ~~diode forward voltage~~<br>~~Peakrateoffallofreverse~~||_T_C<br>_I_SM<br>_V_GS<br>_t_rr<br>_V_R<br>d_i_F/d_t_<br>_Q_rr<br>_I_rrm<br>Is<br>=25°C<br>~~b~~o<br>=<br>~~V~~sp | =p<br>||<br>420.e's,<br>|<br>tos <br>||



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_T_ j ) 1.35 A, _V_ DD 

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## _f_ 

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_V_ DS ) _V_ GS 

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**SPD02N60C3 SPU02N60C3** 

## PG-TO-252-3-1 (D-PAK), PG-TO-252-3-11 (D-PAK), PG-TO-252-3-21 (D-PAK) 

Rev. 2.6                                                           Page 11 

2017- 0 5-15 

**SPD02N60C3 SPU02N60C3** 

PG-TO-251-3-1 (I-PAK), PG-TO-251-3-21 (I-PAK) 

Rev. 2.6                                                               Page 12 

2017- 0 5-15 

**SPx02N60C3** 

## SPx02N60C3 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.6|2017-05-18|typo correction in dv/dt diagram scaling|



## **erratum@infineon.com** 

## **Information** 

**www.infineon.com** ). 

## **Warnings** 

13 



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- [Supplier page](https://es.farnell.com/infineon/spu02n60c3bkma1/mosfet-n-to-251/dp/1664132)
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