# Power MOSFET, N Channel, 560 V, 21 A, 0.16 ohm, TO-220, Through Hole

![Product image](https://novapart.co/image/farnell:2726034/)

**URL**: https://novapart.co/products/SPP21N50C3XKSA1/power-mosfet-n-channel-560-v-21-a-016-ohm-to-220
**SKU**: SPP21N50C3XKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.0600
**Stock**: 500+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:560V; On Resistance Rds(on):0.16ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (21-Jan-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | CoolMos |
| Qualification | - |
| Power Dissipation | 34.5W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220 |
| Drain Source Voltage Vds | 560V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 21A |
| Drain Source On State Resistance | 0.16ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2726034/)

**SPP21N50C3 SPI21N50C3, SPA21N50C3** 

## **Cool MOS™ Power Transistor** 

## **Feature** 

- New revolutionary high voltage technology 

- Worldwide best _R_ in TO 220 DS(on) 

- Ultra low gate charge 

- Periodic avalanche rated 

- Extreme d _v_ /d _t_ rated 

||_V_DS_@T_jmax|560||V|
|---|---|---|---|---|
||_R_DS(on)|0.19||Ω|
||_I_D|21||A|
|PG-TO220FP            P|0FP            P G-TO262|PG-TO220|||
|1<br>2<br>3|||||



- Ultra low effective capacitances 

- Improved transconductance 

|**Parameter**|**Symbol**<br>| -_>T—|**Value**<br>a<br>-_>T—|**Value**<br>a<br>-_>T—|**Unit**|
|---|---|---|---|---|
|||**SPP_I**<br>a<br>-_>T—|**SPA**<br>a<br>-_>T—||
|Continuous drain current<br>_T_C= 25 °C<br>_T_C= 100 °C|_I_D<br> -_>T—|21<br>13.1<br>-_>T—|211)<br>13.11)<br>-_>T—|A|
|Pulsed drain current,_t_plimited by_T_jmax|_I_D puls<br>rr|63<br>rr|63<br>rr|A|
|pjmax<br>Avalanche energy, single pulse<br>_I_D=10A,_V_DD=50V|D puls<br>_E_AS|690|690|mJ|
|Avalanche energy, repetitive_t_ARlimited by_T_jmax2)<br>_I_D=21A,_V_DD=50V|_E_AR|1|1||
|Avalanche current, repetitive_t_ARlimited by_T_jmax|_I_AR<br>ef|21<br>ef|21<br>ef|A|
|jmax<br>Gate source voltage|_V_GS<br>rr<br>ee|±20<br>rr<br>ee|±20<br>rr<br>ee|V|
|Gate source voltage AC (f >1Hz)|_V_GS<br>ee|±30<br>ee|±30<br>ee||
|Power dissipation,_T_C= 25°C|_P_tot<br>ee<br>a|208<br>ee|34.5<br> ee|W|
|Operating and storage temperature|_T_j ,_T_stg<br>a|-55...+150||°C|
|Reverse diode dv/dt<br>7)|jstg<br>_dv/dt_<br>i|15||V/ns|



Rev. 3.2 p age 1 

200 9 - 12-22 

**SPP21N50C3 SPI21N50C3, SPA21N50C3** 

**Maximum Ratings Parameter Symbol Value Unit** Drain Source voltage slope d _v_ /d _t_ 50 V/ns Ie _V_ DS = 400 V, _I_ D = 21 A, _T_ j = 125 °C **Thermal Characteristics Parameter Symbol Values Unit** = **min. typ. max.** _R_ - - 0.6 K/W Thermal resistance, junction - case ee thJC Thermal resistance, junction - case, FullPAK _R_ thJC_FP - - 3.6 _R_ - - 62 Thermal resistance, junction - ambient, leaded thJA Thermal resistance, junction - ambient, FullPAK a _R_ thJA_FP - - 80 SMD version, device on PCB: _R_ thJA @ min. footprint - - 62 @ 6 cm[2] cooling area[3)] - 35 - Bae Soldering temperature, wavesoldering _T_ sold - - 260 °C 1.6 mm (0.063 in.) from case for 10s[4)] aa 

|j=25°C unless otherwise specified<br>**Parameter**|j=25°C unless otherwise specified<br>**Symbol**<br>==|j=25°C unless otherwise specified<br>**Conditions**<br>==|j=25°C unless otherwise specified<br>**Values**<br>==|j=25°C unless otherwise specified<br>**Values**<br>==|j=25°C unless otherwise specified<br>**Values**<br>==|**Unit**|
|---|---|---|---|---|---|---|
||||**min.**<br>==|**typ.**<br>==|**max.**<br>==||
|Drain-source breakdown voltage|_V_(BR)DSS<br>==<br>jf|_V_GS=0V,_I_D=0.25mA<br>==<br>jf|500<br>==<br>jfft|-<br>==<br>ft|-<br>==<br>ft|V|
|Drain-Source avalanche<br>breakdown voltage|_V_(BR)DS<br>jf|_V_GS=0V,_I_D=21A<br>jf|-<br>jfft|600<br>ft|-<br>ft||
|Gate threshold voltage|_V_GS(th)<br>jf|_I_D=1000µA,_V_GS=VDS<br>jf|GS=VDS<br>2.1<br>jfft|3<br>ft|3.9<br>ft||
|Zero gate voltage drain current|GS(th)<br>_I_DSS<br>jf<br>corr|_V_DS=500V,_V_GS=0V,<br>_T_j=25°C<br>_T_j=150°C<br>jf<br>corr|-<br>-<br>jf ft<br>corr|0.1<br>-<br>ft<br>corr|1<br>100<br>ft<br>corr|µA|
|Gate-source leakage current|_I_GSS<br>corr|_V_GS=20V,_V_DS=0V<br>corr|-<br>corr|-<br>corr|100<br>corr|nA|
|Drain-source on-state resistance|_R_DS(on)<br>||_V_GS=10V,_I_D=13.1A<br>_T_j=25°C<br>_T_j=150°C<br>td|-<br>-<br>td|0.16<br>0.54<br>td|0.19<br>-<br>td|Ω|
|Gate input resistance|_R_G<br>||_f_=1MHz, open drain<br> td|-<br>td|0.53<br>td|-<br>td||



Rev. 3.2 p age 2 

200 9 - 12 - 22 

**SPP21N50C3 SPI21N50C3, SPA21N50C3** 

## **Electrical Characteristics** 

|**Electrical Characteristics**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**<br>eee<br>—|**Conditions**<br>eee<br>||**Values**<br>eee|||**Unit**|
||||**min.**<br>eee<br>|ft|**typ.**<br>eee<br>ft|**max.**<br>eee||
|Transconductance|_g_fs<br>{|<br>—|_V_DS≥2*_I_D*_R_DS(on)max,<br>_I_D=13.1A<br>{|<br>||-<br>{|<br>|ft|18<br>{|<br>ft<br>ee|-<br>{||S|
|Input capacitance|_C_iss<br>—<br>eo|_V_GS=0V,_V_DS=25V,<br>_f_=1MHz<br>|<br>eo|-<br>| ft<br>es<br>eo|2400<br>ft<br>es<br>ee<br>eo|-<br>es<br>eo|pF|
|Output capacitance|_C_oss<br>eo||-<br>eo|1200<br>ee<br>eo|-<br>eo||
|Reverse transfer capacitance|_C_rss<br>eo<br>—||-<br>eo<br>es|30<br>eo<br>es|-<br>eo<br>es||
|Effective output capacitance,5)<br>energy related|_C_o(er)<br>—|_V_GS=0V,_V_DS=400V<br>—|-<br>S||87<br>S|fl|-<br>fl||
|Effective output capacitance,6)<br>time related|_C_o(tr)<br>—<br>—||-<br>S||181<br>S|fl<br>ee|-<br>fl||
|Turn-on delay time|_t_d(on)<br>—<br>—<br>—|_V_DD=380V,_V_GS=0/10V,<br>_I_D=21A,<br>_R_G=3.6Ω<br>—|-<br>S|<br>es|10<br>S|fl<br>es<br>ee<br>ee|-<br>fl<br>es|ns|
|Rise time<br>||_t_r<br>—<br>—<br>|||-<br>es|5<br>ee<br>es<br>ee<br>ee|-<br>es||
|Turn-off delay time<br>||_t_d(off)<br>—<br>|||-<br>es|67<br>ee<br>es<br>ee|-<br>es||
|Fall time<br>||_t_f<br>|||-<br>Ff|4.5<br>ee<br>Ff|-<br>Ff||



1Limited only by maximum temperature 

2Repetitve avalanche causes additional power losses that can be calculated as _P_ AV= _E_ AR * _f_ . 

3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 

4Soldering temperature for TO-263: 220°C, reflow 

5 _C_ o(er) is a fixed capacitance that gives the same stored energy as _C_ oss while _V_ DS is rising from 0 to 80% _V_ DSS. 

6 _C_ o(tr) is a fixed capacitance that gives the same charging time as _C_ oss while _V_ DS is rising from 0 to 80% _V_ DSS. 7 ISD<=ID, di/dt<= 2 00A/us, VDClink=400V, Vpeak<VBR, DSS, Tj<Tj,max. 

Identical low-side and high-side switch. 

Rev. 3.2 p age 3 

200 9 - 12 - 22 

**SPP21N50C3** 

**SPI21N50C3, SPA21N50C3** 

## **Electrical Characteristics** 

**Parameter Symbol Conditions Values Unit** | **min. typ. max.** Inverse diode continuous _I_ S _T_ C =25°C - - 21 A forward current Inverse diode direct current, _I_ SM - - 63 pulsed e=e Inverse diode forward voltage _V_ SD _V_ GS =0V, _I_ F= _I_ S - 1 1.2 V Reverse recovery time ~~=~~ _t_ rr _V_ R =380V, _I_ F= _I_ S , - 450 720 ns Reverse recovery charge _Q_ rr d _i_ F/d _t_ =100A/µs - 9 - µC Peak reverse recovery current e| _I_ rrm ~~e~~ ee - 60 - A Peak rate of fall of reverse _di_ rr _/dt T_ j =25°C - 1200 - A/µs recovery current ~~|~~ | ft **Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit SPP_I SPA SPP_I SPA** _R_ th1 a 0.00769 0.00769 K/W _C_ th1 0.0003763 0.0003763 Ws/K OC _R_ th2 Sa 0.015 0.015 _C_ th2 0.001411 0.001411 OO _R_ th3 SS 0.029 0.029 _C_ th3 0.001931 0.001931 OO _R_ th4 a 0.114 0.16 _C_ th4 0.005297 0.005297 OO _R_ th5 0.136 0.319 _C_ th5 0.012 0.008659 _R_ th6 == 0.059 2.523 _C_ th6 0.091 0.412 External Heatsink **T j** R th1 R th,n **T case** P tot (t) C th1 C th2 C th,n **T amb** 

Rev. 3.2 p age 4 

200 9 - 12-22 

**SPP21N50C3 SPI21N50C3, SPA21N50C3** 

## **1 Power dissipation** 

_P_ tot = _f_ ( _T_ C ) 

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**----- Start of picture text -----**<br>
SPP21N50C3<br>240<br>W<br>TELL<br>POAT<br>200<br>EEE<br>180<br>POUNCE<br>160<br>140 SEESPACE<br>120<br>100<br>! onset,PCEECECEN EEE<br>80<br>oN<br>60<br>CCCCCEEEEN EEE<br>40 CCEA SEE<br>20<br>E PCEEC E CEELETEN S<br>0<br>0 20 40 60 80 100 120 °C 160<br>—r T C<br>tot<br>P<br>**----- End of picture text -----**<br>


## **3 Safe operating area** 

## _I_ D = _f_ ( _V_ DS ) 

## parameter : _D_ = 0 , _T_ C =25°C 

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10 2<br> A<br>A<br>10 1<br>a NE Nl<br>AINE STIS TNT<br>10 0<br>I NOT<br>tp = 0.001 ms<br>tp = 0.01 ms<br>|| CUA ETNITI<br>tp = 0.1 ms<br>10 -1 | tp = 1 ms IN NUT<br>tp = 10 ms<br>DC<br>|| LTTE EET<br>10 -2 Ue A Il<br>10 [0] 10 [1] 10 [2]  V 10 [3]<br>V DS<br>I D<br>**----- End of picture text -----**<br>


## **2 Power dissipation FullPAK** 

_P_ tot = _f_ ( _T_ C ) 

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35<br> W TINT<br>IT<br>.<br>SIN  EEL<br>25<br>LEENA<br>20 \<br>15<br>! LITT\<br>tT<br>10<br>\<br>ELE ELEN EL<br>5<br>([LELETTIITTUN\<br>0<br>0 20 40 60 80 100 120  °C 160<br>T C<br>tot<br>P<br>**----- End of picture text -----**<br>


## **4 Safe operating area FullPAK** 

## _I_ D = _f_ ( _V_ DS ) 

## parameter: _D_ = 0, _T_ C = 25°C 

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10 2<br> A<br>a Z|<br>10 1<br>TNUN<br>PACTS EESUIS EPI<br>10 0<br>UT NUON<br>tp = 0.001 ms<br>COON ECT<br>tp = 0.01 ms<br>10 -1 tp = 0.1 ms AI NU<br>tp = 1 ms<br>tp = 10 ms<br>DC<br>PLETE<br>10 -2 AEE LTil<br>10 [0] 10 [1] 10 [2]  V 10 [3]<br>V DS<br>I D<br>**----- End of picture text -----**<br>


Rev. 3.2 p age 5 

200 9 - 12 - 22 

**SPP21N50C3 SPI21N50C3, SPA21N50C3** 

## **6 Transient thermal impedance FullPAK** 

## **5 Transient thermal impedance** 

_Z_ thJC = _f_ ( _t_ p) 

_Z_ thJC = _f_ ( _t_ p ) parameter: _D_ = _t_ p / _t_ 

## parameter: _D_ = _t_ p/ _T_ 

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10 0 10 1<br> K/W  K/W<br>Te Se aps mrieie mrieie Agi<br>10 -1 10 0<br>HE af al<br>10 -2 D = 0.5 10 -1 D = 0.5<br>D = 0.2 D = 0.2<br>D = 0.1 D = 0.1<br>D = 0.05 D = 0.05<br>D = 0.02 D = 0.02<br>A A il Ha<br>10 -3 D = 0.01 10 -2 D = 0.01<br>single pulse single pulse<br>ST SEaa<br>ETE TEI ETT TTT TTI TTI TT LTTE TIM TTT TTT TIME CETTE TTT<br>10 -4 10 -3<br>SUE UNE HIE HIME HIE EINE CUE LINE LINE HIME HINT EVI)<br>10 [-7] 10 [-6] 10 [-5] 10 [-4] 10 [-3] 10 [-2]  s 10 [0] 10 [[-6]] 10 [[-5]] 10 [[-4]] 10 [[-3]] 10 [[-2]] 10 [[-1]]   s 10<br>t t<br>p p<br>7 Typ. output characteristic 8 Typ. output characteristic<br>D =  =  f  ( V DS ); T j =25°C I D =  f  ( V DS ); T j =150°C<br>parameter:  t p = 10 µs,  = 10 µs,  V GS parameter:  t p = 10 µs,  V GS<br>70 40<br> A<br> A<br>Zo ity<br>Vgs = 20V Vgs = 20V<br>Vgs = 7V Vgs = 7V<br>Vgs = 6.5V J 30 Vgs = 6V Jo<br>50<br>Vgs = 5.5V<br>Vgs = 6V<br>25<br>Vgs = 5V<br>40<br>f— Yee<br>Vgs = 5.5V 20<br>30<br>fi, fF<br>| en Vgs = 5V 15 f Vgs = 4.5V<br>fa | fe<br>20<br>f _f-<br>10<br>Vgs = 4V<br>Vgs = 4.5V<br>nn Z<br>10<br>5<br>FCC) [AS<br>Vgs = 4V<br>0 0<br>0 pe 5 10 rs 15  V 25 0 FT 5 TT 10 15  t  V 25<br>V DS V DS<br>thJC<br>Z thJC Z<br>I D I D<br>**----- End of picture text -----**<br>


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10 1<br> K/W<br>Se aps mrieie mrieie Agi<br>10 0<br>af al<br>10 -1 D = 0.5<br>D = 0.2<br>D = 0.1<br>D = 0.05<br>D = 0.02<br>Ha<br>10 -2 D = 0.01<br>single pulse<br>SEaa<br>LTTE TIM TTT TTT TIME CETTE TTT<br>10 -3<br>CUE LINE LINE HIME HINT EVI)<br>10 [[-6]] 10 [[-5]] 10 [[-4]] 10 [[-3]] 10 [[-2]] 10 [[-1]]   s 10 [1]<br>t<br>p<br>thJC<br>Z<br>**----- End of picture text -----**<br>


## **7 Typ. output characteristic** 

_I_ D =  = _f_ ( _V_ DS ); _T_ j =25°C 

## parameter: _t_ p = 10 µs,  = 10 µs, _V_ GS 

Rev. 3.2 p age 6 

200 9 - 12 - 22 

**SPP21N50C3 SPI21N50C3, SPA21N50C3** 

## **9 Typ. drain-source on resistance** 

_R_ DS(on)= _f_ ( _I_ D) 

parameter: _T_ j =150°C, _V_ GS 

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1.5<br>Ω Vgs = 4V<br>Vgs = 4.5V<br>Vgs = 5V<br>Vgs = 5.5V<br>Vgs = 6V<br>Vgs = 20V<br>0.9<br>yy<br>0.6 pe—— ZE™ae<br>0.3<br>0 5 10 15 20 25 30  A 40<br>I D<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


## **10 Drain-source on-state resistance** 

_R_ DS(on) = _f_ ( _T_ j) 

parameter : _I_ D = 13.1 A, _V_ GS = 10 V 

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SPP21N50C3<br>1.1<br>Ω<br>CTCL<br>CPPCC<br>0.9 CCPC<br>0.8 SCEPC<br>0.7 CPPCC<br>0.6<br>0.5<br>0.4<br>t COC<br>0.3 CeCe<br>98%<br>0.2<br>typ<br>0.1<br>n=: 4eennnee<br>0 PTL LECEP<br>-60 -20 20 60 100 °C 180<br>T<br>j<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


## **11 Typ. transfer characteristics** 

_I_ D= _f_ ( _V_ GS ); _V_ DS≥ 2 x _I_ D x _R_ DS(on)max parameter: _t_ p = 10 µs 

## **12 Typ. gate charge** 

_V_ GS = _f_ ( _Q_ Gate) 

## parameter: _I_ D = 21 A pulsed 

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**----- Start of picture text -----**<br>
SPP21N50C3<br>70 16<br> A V<br>aan -E-AAAHEE<br>Tj = 25°C<br>12<br>ff Pi  TTTt it ELTTt tttLEAAy<br>50<br>Tj = 150°C 10 0,2 V DS max 0,8 V DS max<br>40<br>8<br>| Lf H HH<br>30<br>6<br>PPP ARE<br>20<br>|) 7 4 PATeeeTT EET<br>10 AHHH<br>fe 2 TEE<br>Fo AHHH4<br>0 0 4,<br>0 2 4 6  V 10 0 20 40 60 80 100 nC 140<br>V GS Q Gate<br>I D V GS<br>**----- End of picture text -----**<br>


Rev. 3.2 p age 7 

20 09 - 12 - 22 

**SPP21N50C3 SPI21N50C3, SPA21N50C3** 

## **13 Forward characteristics of body diode** 

## **14 Avalanche SOA** 

## _I_ F = _f_ (VSD) 

## _I_ AR = _f_ ( _t_ AR) 

## par.: _T_ j ≤ 150 °C 

## parameter: _T_ j , tp = 10 µs 

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10 2 SPP21N50C3<br>A<br>====sa>==SSa=== A<br>10 1<br>=ERR REE REE<br>{ 10 0 ee<br>COMET<br>T j = 25 °C typ<br>T j = 150 °C typ<br>T j = 25 °C (98%)<br>T j = 150 °C (98%)<br>10 -1 |TTUPN |Th |<br>0 0.4 0.8 1.2 1.6 2 2.4 V 3<br>V SD<br>I F I AR<br>**----- End of picture text -----**<br>


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20 Hi<br> A<br>)\<br>10 | Tj(Start)=25°C |<br>5 Tj(Start)=125°C<br>\ Wi |St<br>010 [-3] 10 [-2] 10 [-1] 10 [0] 10 [1] 10 [2]  µs 10 [4]<br>t AR<br>I AR<br>**----- End of picture text -----**<br>


## **15 Avalanche energy** 

## _E_ AS = _f_ ( _T_ j ) 

## **16 Drain-source breakdown voltage** 

## _V_ (BR)DSS = _f_ ( _T_ j ) 

## par.: _I_ D = 10 A, _V_ DD = 50 V 

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**----- Start of picture text -----**<br>
750<br>mJ<br>|Vi| | | [| | |] |<br>600550 PVEPV ||J | | ft[| tl|| |<br>500450 FhPIV;| || [|ffft||<br>400350 ||{| \iYX || ff[ | |<br>300<br>| P| A | ff<br>250200 PFP|| |[\t| YN ft[ ft| ||<br>150 P| | IN<br>100 | | |N | ft<br>50 Ne<br>0 P| | | hud UN<br>20 40 60 80 100 120 °C 160<br>T<br>j<br>AS<br>E<br>**----- End of picture text -----**<br>


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SPP21N50C3<br>600<br>V<br>P|] ttt} ] tt ti<br>570560 Pi P itt]| ttti t| t |ittttyyft cy<br>550540 PETPi TTTetytetTeey yy AL<br>530520 PTPT TTTTTT eyT y A L<br>510<br>| PLT TITeyAL<br>500490 PittPTTTALL yA<br>480 Pliv7AtTTT<br>470460 PIALAltttIT Tyttyyyyyyy<br>450 Fi} ]ti t t ttt ]}tf<br>-60 -20 20 60 100 °C 180<br>T<br>j<br>(BR)DSS<br>V<br>**----- End of picture text -----**<br>


Rev. 3.2 p age 8 

200 9 - 12 - 22 

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**----- Start of picture text -----**<br>
SPP21N50C3<br>SPI21N50C3, SPA21N50C3<br>a)<br>17 Avalanche power losses 18 Typ. capacitances<br>P AR =  f  ( f  ) C  =  f  ( V DS )<br>parameter:  E AR =1mJ parameter:  V GS =0V,  f =1 MHz<br>500 10 5<br> pF<br> W 10 4<br>a<br>Ciss<br>300 10 3<br>=<br>Coss<br>200 10 2<br>ON EE<br>Crss<br>100 10 1<br>Hn ES<br>010 | [4] 10 [5]  Hz 10 [6] 10 00 == 100 200 300 =  V 500<br>f V DS<br>AR<br>P C<br>**----- End of picture text -----**<br>


## **19 Typ.** _C_ oss **stored energy** 

## _E_ oss= _f_ ( _V_ DS ) 

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10<br> µJ TTY<br>6 TTT<br>4<br>UAT<br>2<br>A<br>paannniil<br>0<br>0 50 100 150 200 250 300 350 400  V 500<br>V DS<br>oss<br>E<br>**----- End of picture text -----**<br>


Rev. 3.1 p age 9 

200 9 - 12 - 22 

**SPP21N50C3 SPI21N50C3, SPA21N50C3** 

## Definition of diodes switching characteristics 

Rev. 3.2 p age 10 

200 9 - 12 - 22 

**SPP21N50C3 SPI21N50C3, SPA21N50C3** 

## PG-TO220-3-1, PG-TO220-3-21 

Rev. 3.2 p age 11 

200 9 - 12 - 22 

> **SPP16N50C3** SPP21N50C3 

> **SPI16N50C3** SPI21N50C3, **, SPA16N50C3** SPA21N50C3 

## **PG-TO220-3 (Fully isolated)** 

**==> picture [11 x 20] intentionally omitted <==**

**----- Start of picture text -----**<br>
24<br>|<br>**----- End of picture text -----**<br>


Dimensions in mm/ inches 

Rev. 3.2                                                                       page 12 200 9 -1 2 - 22 

**SPP21N50C3 SPI21N50C3, SPA21N50C3** 

## PG-TO262-3-1 , PG-TO262-3-21 (I²-PAK) 

Rev. 3.2 p age 13 

200 9 - 12-22 

**SPP21N50C3 SPI21N50C3, SPA21N50C3** 

## **Published by Infineon Technologies AG 81726 Munich, Germany © 2007 Infineon Technologies AG All Rights Reserved.** 

## **Legal Disclaimer** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. 

## **Information** 

For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). 

## **Warnings** 

Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 

Rev. 3.2 p age 14 

200 9 - 12 - 22 



## Links

- [View this product on Novapart](https://novapart.co/products/SPP21N50C3XKSA1/power-mosfet-n-channel-560-v-21-a-016-ohm-to-220)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/spp21n50c3xksa1/mosfet-n-ch-560v-21a-to-220/dp/2726034)
---

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