# Power MOSFET, P Channel, 100 V, 15 A, 0.14 ohm, TO-220, Through Hole

![Product image](https://novapart.co/image/farnell:2443446/)

**URL**: https://novapart.co/products/SPP15P10PLHXKSA1/power-mosfet-p-channel-100-v-15-a-014-ohm-to-220
**SKU**: SPP15P10PLHXKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.7070
**Stock**: 100+
**Lead Time**: 85 days (indicative)

## Description

Transistor Polarity:P Channel; Continuous Drain Current Id:-15A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.14ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 128W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220 |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 15A |
| Drain Source On State Resistance | 0.14ohm |
| Gate Source Threshold Voltage Max | 1.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2443446/)

**SP P 15P10PL H** 

## **SIPMOS[®] Power-Transistor** 

## **Features** 

- P-Channel 

- Enhancement mode 

**Product Summary** _V_ DS -100 V ~~a~~ _R_ DS(on),max 0.20 ~~ee~~ _I_ D -15 A ~~ee~~ 

- logic level 

- Avalanche rated 

PG-TO220-3 

- Pb-free lead plating; RoHS compliant 

- ° Halogen-free according to IEC61249-2-21 

- ° Qualified according to AEC Q101 

|||||**Packing**|
|---|---|---|---|---|
|**Type**|**Package**|**Marking**|**Lead free**||
|||||Non dry|
|SPP15P10PLH|PG-TO220-3|15P10PL|Yes||



**Maximum ratings,** at _T_ j=25 °C, unless otherwise specified 

|**Maximum ratings,**at_T_j=25 °C, unless otherwise specified=25 °C, unless otherwise specified|j=25 °C, unless otherwise specified=25 °C, unless otherwise specified<br>esa|j=25 °C, unless otherwise specified=25 °C, unless otherwise specified<br>a|po||
|---|---|---|---|---|
|**Parameter**|**Symbol **<br>esa|**Conditions**<br>a|**Value**<br>po|**Unit**|
|Continuous drain current|_I_D<br>esa|_T_C=25 °C<br>a|-15<br> po|A|
|||_T_C=100 °C|11.3||
|Pulsed drain current|_I_D,pulse<br>a|_T_C=25 °C<br> a|-60||
|Avalanche energy, single pulse|_E_AS<br>re|_I_D=-15 A,_R_GS=25<br>re|230<br>re|mJ|
|Gate source voltage|_V_GS<br>rr|rr|±20<br>rr|V|
|Power dissipation|_P_tot<br>rr|_T_C=25 °C<br>rr|128<br>rr|W|
|Operating and storage temperature|_T_j,_T_stg<br>re|re|-55 ... 175<br>re|°C|
|ESD Class|rr|rr|1C (1kV to 2kV)<br>rr||
|Soldering temperature|er|er|260 °C<br>er||
|IEC climatic category; DIN IEC 68-1|rr|rr|55/175/56<br>rr||



Rev 1. 4 page 1 

20 11 -0 9 - 01 

|Cinfineon|||||||
|---|---|---|---|---|---|---|
|Cinfineon||||**SPP15P10PL H**|||
||||||||
|**Parameter**|**Symbol **|**Conditions**||**Values**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**Thermal characteristics**|||||||
|Thermal resistance,<br>junction - soldering point|_R_thJC||-|-|1.17|K/W|
|Thermal resistance,<br>junction - ambient|_R_thJA|minimal footprint,<br>steady state|-|-|75||
|||6 cm2cooling area1),<br>steady state|-|-|45||



**Electrical characteristics,** at _T_ j=25 °C, unless otherwise specified 

## **Static characteristics** 

|Drain-source breakdown voltage|_V_(BR)DSS|_V_GS=0 V,_I_D=-250 mA|-100|-|-|V||
|---|---|---|---|---|---|---|---|
|Gate threshold voltage|_V_GS(th)|_V_DS=_V_GS,_I_D=-<br>1.54 mA|-1|-1.5|-2|||
|Zero gate voltage drain current|_I_DSS|_V_DS=-100 V,_V_GS=0 V,<br>_T_j=25 °C|=0 V,<br>-|-0.1|-1|μA||
|||_V_DS=-100 V,_V_GS=0 V,<br>_T_j=150 °C|=0 V,<br>-|-10|-100|||
|Gate-source leakage current|_I_GSS|_V_GS=-20 V,_V_DS=0 V|-|-10|-100|nA||
|Drain-source on-state resistance|_R_DS(on)|_V_GS=-4.5 V,_I_D=-9.7 A|-|190|270|m||
|||_V_GS=-10 V,<br>_I_D=-11.3 A|-|140|200|m|;|
|Transconductance|_g_fs||_V_DS|>2|_I_D|_R_DS(on)max,<br>_I_D=-11.3 A|5.5|11.0|-|S||



1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 μm thick) copper area for drain connection. PCB is vertical in still air. 

Rev 1. 4 page 2 

20 11 -0 9 - 01 

**SP P 15P10PL H** 

|**SPP15P10PL H**<br>Cinfineon|**SPP15P10PL H**<br>Cinfineon|**SPP15P10PL H**<br>Cinfineon|**SPP15P10PL H**<br>Cinfineon|**SPP15P10PL H**<br>Cinfineon|**SPP15P10PL H**<br>Cinfineon|**SPP15P10PL H**<br>Cinfineon|
|---|---|---|---|---|---|---|
|||||||||
|**Parameter**<br>||**Symbol **<br>||**Conditions**<br>||**Values**<br>||||**Unit**<br>||
||||**min.**<br>||**typ.**<br>||**max.**<br>|||
|**Dynamic characteristics**<br>||||||||
|Input capacitance|_C_iss<br>EEE|_V_GS=0 V,_V_DS=-25 V,<br>_f_=1 MHz<br>EEE<br>Sl.|-<br>EEE|1120<br>EEE|1490<br>EEE|pF|
|Output capacitance|_C_oss<br>EEE||-<br>EEE|272<br>EEE|362<br>EEE||
|Reverse transfer capacitance<br>|||_C_rss<br>EEE<br>||<br>Sl.||-<br>EEE<br>|<br>|120<br>EEE<br>|<br>|<br>|180<br>EEE<br>|<br>|<br>||
|Turn-on delay time<br>|||_t_d(on)<br>||<br>Sl.|_V_DD=-50 V,_V_GS=-<br>10 V,_I_D=-15 A,<br>_R_G=6<br>Sl.|-<br>|<br>|7.6<br>|<br>|<br>|11<br>|<br>|<br>|ns|
|Rise time<br>|||_t_r<br>||<br>Sl.||-<br>|<br>ERE|21<br>|<br>|<br>ERE|31<br>|<br>|<br>ERE||
|Turn-off delay time|_t_d(off)<br>Sl.||-<br>ERE|50<br>|<br>ERE|75<br>|<br>ERE||
|Fall time|_t_f<br>Sl.||-<br> ERE|29<br>|<br>ERE|44<br>|<br>ERE||
|Gate Charge Characteristics2)<br>|<br>Sl.|||||||
|Gate to source charge|_Q_gs|_V_DD=-80 V,_I_D=-15 A,<br>_V_GS=0 to -10 V|-|4.3|5.7|nC|
|Gate to drain charge|_Q_gd||-|17|26||
|Gate charge total|_Q_g||-|47|62||
|Gate plateau voltage|_V_plateau||-|4.0|-|V|
|**Reverse Diode**|||||||
|Diode continuous forward current|_I_S|_T_C=25 °C|-|-|-15|A|
|Diode pulse current|_I_S,pulse||-|-|-60||
|Diode forward voltage|_V_SD|_V_GS=0 V,_I_F=-15 A,<br>_T_j=25 °C|-|-0.96|-1.35|V|
|Reverse recovery time|_t_rr|_V_R=50 V,_I_F=|_I_S|,<br>d_i_F/d_t_=100 A/μs|-|110|165|ns|
|Reverse recovery charge|_Q_rr||-|450|675|nC|



2) See figure 16 for gate charge parameter definition 

Rev 1. 4 page 3 

20 11 -0 9 - 01 

**SP P 15P10PL H** 

**1 Power dissipation** 

_P_ tot=f( _T_ C) 

## **2 Drain current** 

_I_ D=f( _T_ C); | _V_ GS 

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16<br>12<br>8<br>4<br>0<br>0 40 80 120 160<br>T  A [°C] [°C]<br> [A]<br> D<br>-I<br>**----- End of picture text -----**<br>


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140<br>120<br>12<br>100<br>80<br>8<br>60<br>40<br>4<br>20<br>0 0<br>0 40 80 120 160 0 40 80 120 160<br>T  A [°C] T  A [°C] [°C]<br>3 Safe operating area 4 Max. transient thermal impedance<br>=f( V  DS););  T  C=25 °C; =25 °C;  D  =0 Z  thJC=f( t  p)<br>parameter:  t  p parameter:  D  = t  p/ T<br>10 [2] 10 [1]<br>limited by on-state<br>resistance<br>10 μs<br>100 μs<br>10 [1] 1 ms 10 [0]<br>0.5<br>10 ms<br>DC 0.2<br>0.1<br>0.05<br>10 [0] 10 [-1]<br>0.02<br>0.01<br>single pulse<br>10 [-1] 10 [-2]<br>10 cee [0] 10 [1] 10 [2] 10 [3] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]<br>-V  DS [V] t  p [s]<br> [W]  [A]<br> tot -I  D<br>P<br> [A]  [K/W]<br> D<br>-I<br> thJS<br>Z<br>**----- End of picture text -----**<br>


## **3 Safe operating area** 

_I_ D=f( _V_ DS);); _T_ C=25 °C; =25 °C; _D_ =0 parameter: _t_ p 

Rev 1. 4 page 4 

20 11 -0 9 - 01 

**SP P 15P10PL H** 

## **5 Typ. output characteristics** 

_I_ D=f( _V_ DS); _T_ j=25 °C 

parameter: _V_ GS 

## **6 Typ. drain-source on resistance** 

_R_ DS(on)=f( _I_ D); _T_ j=25 °C parameter: _V_ GS 

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**----- Start of picture text -----**<br>
40 500<br>-10 V<br>-6 V -3.5 V -4.5 V<br>-3 V<br>35 -8 V<br>-2.5 V<br>30 400<br>25 -4.5 V<br>20 300<br>15<br>-3.5 V<br>10 200<br>-6 V<br>-3 V<br>5 -8 V<br>-2.5 V -10 V<br>0 - 100<br>0 2 4 6 8 10 0 10 20 30<br>-V  DS [V] -I  D [A]<br>]<br> [m<br> [A]<br> D<br>-I<br> DS(on)<br>R<br>**----- End of picture text -----**<br>


## **7 Typ. transfer characteristics** 

_I_ D=f( _V_ GS); | _V_ DS|>2| _I_ D| _R_ DS(on)max parameter: _T_ 

j 

**8 Typ. forward transconductance** 

_g_ fs=f( _I_ D); _T_ j=25 °C 

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**----- Start of picture text -----**<br>
30 20<br>25 °C<br>25<br>15<br>20<br>125 °C<br>15 10<br>10<br>5<br>5<br>0 J 0<br>1 2 3 4 5 0 5 10 15 20 25 30<br>-V  GS [V] -I  D [A]<br> [A]  [S]<br> D  fs<br>-I g<br>**----- End of picture text -----**<br>


Rev 1. 4 page 5 

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**SP P 15P10PL H** 

## **9 Drain-source on-state resistance** 

## **10 Typ. gate threshold voltage** 

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**----- Start of picture text -----**<br>
R  DS(on)=f( T  j);  I  D=-11.3 A;  V  GS=-10 V V  GS(th)=f( T  j);  V  GS= V  DS;  I  D=-1.54 mA<br>400 3<br>300<br>max.<br>98 %<br>2<br>typ.<br>200<br>1<br>min.<br>typ.<br>100<br>AS 0 0<br>-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180<br>T  j [°C] T  j [°C]<br>11 Typ. capacitances 12 Forward characteristics of reverse diode<br>C  =f( V  DS);  V  GS=0 V;  f  =1 MHz I  F=f( V  SD)<br>parameter:  T  j<br>10 [2]<br>25  ° C, typ<br>175  ° C, 98%<br>10 [1] 175 °C, typ<br>10 [3] Ciss 25  ° C, 98%<br>10 [0]<br>Coss<br>10 [2]<br>Crss<br>10 [-1]<br>10 [1] 10 [-2]<br>0 20 40 60 80 0 0.5 1 1.5<br>-V  DS [V] -V  SD [V]<br>]<br>[m  [V]<br> GS(th)<br> DS(on) -V<br>R<br>C   [pF]  [A] I  F<br>**----- End of picture text -----**<br>


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**SP P 15P10PL H** 

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**----- Start of picture text -----**<br>
13 Avalanche characteristics 14 Typ. gate charge<br>I  AS=f( t  AV);  R  GS=25 V  GS=f( Q  gate);  I  D=-15 A pulsed<br>parameter:  T  j(start) parameter:  V  DD<br>10<br>50 V<br>8<br>20 V<br>80 V<br>25 °C<br>10 [1]<br>100 °C<br>6<br>125 °C<br>4<br>10 [0]<br>2<br>10 [-1] A 0<br>10 [0] 10 [1] 10 [2] 10 [3] 0 10 20 30 40 50<br>t  AV [μs] -  Qgate [nC]<br>15 Drain-source breakdown voltage 16 Gate charge waveforms<br>V  BR(DSS)=f( T  j);  I  D=-1mA<br>120<br>V GS<br>115 Q g<br>110<br>105<br>V gs(th)<br>100<br>95<br>Q g(th) Q sw Q gate<br>90 Q  gs Q  gd<br>-60 al -20 20 60 100 140 180 a<br>T  j [°C]<br> [A]  [V]<br> AV GS<br>-I  V -<br> [V]<br> BR(DSS)<br>-V<br>**----- End of picture text -----**<br>


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**SP P 15P10PL H** 

**Package Outline: PG-TO-252-3** 

Rev 1. 4 page 8 

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20 11 -0 9 - 01<br>**----- End of picture text -----**<br>


**SP P 15P10PL H** 

## **PG-TO220-3: Outline** 

Rev 1. 4 page 9 

20 11 -0 9 - 01 

**SPP15P10PL  H** 

Rev. 1. 4 

page 10 

20 11 -0 9 - 01 



## Links

- [View this product on Novapart](https://novapart.co/products/SPP15P10PLHXKSA1/power-mosfet-p-channel-100-v-15-a-014-ohm-to-220)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/spp15p10plhxksa1/mosfet-p-ch-100v-15a-to-220-3/dp/2443446)
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