# Power MOSFET, N Channel, 560 V, 4.5 A, 0.85 ohm, TO-220, Through Hole

![Product image](https://novapart.co/image/farnell:2289562/)

**URL**: https://novapart.co/products/SPP04N50C3XKSA1/power-mosfet-n-channel-560-v-45-a-085-ohm-to-220
**SKU**: SPP04N50C3XKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3200
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Power Dissipation | 50W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 50W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.85ohm |
| Transistor Case Style | TO-220 |
| Drain Source Voltage Vds | 560V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 4.5A |
| Drain Source On State Resistance | 0.85ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2289562/)

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V T<br>DS jmax<br>Ω<br>P G -T0220-3-3  1  _P G -TO220<br>3<br>2<br>SS 1 y 3<br>P-TO220-3-31<br>Sie o><br>**----- End of picture text -----**<br>


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|Maximum Ratings|||||
|---|---|---|---|---|
|Parameter||||Unit|
||||||
|_T_C<br>_T_C<br>Continuous drain current<br>= 25°C|lp|4.5|4.51)|A|
|_t_p<br>_T_jmax<br>Pulsed drain current,<br>limited by||||A|
|p<br>jmax<br>_V_DD<br>Avalanche energy, single pulse|Ens|130|130|mJ|
|_T_jmax<br>_V_DD<br>Avalanche energy, repetitive tap limited by<br>2)|_E_AR|0.4|0.4||
|_T_jmax<br>Avalanche current, repetitive tap limited by||220|||20|A<br>Iv|
|jmax<br>Gate source voltage<br>GatesourcevoltageAC(f>1Hz)|_V_GS<br>|<br>|||<br>220|<br>|30s|||<br>|20<br>|30s|Iv|
|GatesourcevoltageAC(f>1Hz)|_V_GS<br>||±<br>220 |<br>|30s|<br>0||±<br>| 20<br>|30s<br>||Iv<br>tlw|
|Power dissipation,_T_C= 25°C<br>GatesourcevoltageAC (f>1Hz)|_P_tot<br>|<br>||| 30s|<br>|<br>0||| 30s<br>|<br>||tlw|
|Operating and storage temperature||0 |||tlw<br>°C|
|Reverse diode dv/dt<br>7)|dv/dt|15||V/ns|



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_V T_ DS j 

_R_ thJC Thermal resistance, junction - case fe |e | 28 | K/W Thermal resistance, junction - case, FullPAK Rnic rel - | - | 4] _R_ thJA Thermal resistance, junction - ambient, leaded pf le |e] 62 | Thermal resistance, junction - ambient, FullPAK Rn ep] - | - | 80. | SMD version, device on PCB: RihJA @ min. footprint - 62 @ 6 cm? cooling area 3) me) le Soldering temperature, wavesoldering Tsold 260 |°C 1.6 mm (0.063 in.) from case for 10s 4) Lae ee ee ca 

_V V_ Drain-source breakdown voltage | (BR)DSS | GS =0v,fp20.25ma]| 500 | - | - | V _V_ GS breakdown voltage Drain-Source avalanche Memos) smmoreae 7 =| 00 | Gate threshold voltage µ _V V_ Zero gate voltage drain current |/pss DS =500V, GS -=0V, UA _T_ =25°C 0.1 1 j _T_ BER j _V V_ Gate-source leakage current ‘less | GS =20v, DS =ov | - | - | 100, nA _V_ GS Ω Drain-source on-state resistance |Rpgion) =10V, Ip=2.8A _T_ j =25°C 0.85 | 0.95 _T_ =150°C 2.3 - j _R_ Gate input resistance || G RAMHz, opendrain | - | 14 | - | 

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|Parameter|Symbol]Conatone|__Vatues_Unit<br>_min.<br>|typ.|max.<br>2*Ip*RDS(on)max:<br>|EL|Symbol]Conatone|__Vatues_Unit<br>_min.<br>|typ.|max.<br>2*Ip*RDS(on)max:<br>|EL|Symbol]Conatone|__Vatues_Unit<br>_min.<br>|typ.|max.<br>2*Ip*RDS(on)max:<br>|EL|Symbol]Conatone|__Vatues_Unit<br>_min.<br>|typ.|max.<br>2*Ip*RDS(on)max:<br>|EL|Symbol]Conatone|__Vatues_Unit<br>_min.<br>|typ.|max.<br>2*Ip*RDS(on)max:<br>|EL|
|---|---|---|---|---|---|
|Transconductance<br>Input capacitance<br>Parameter|_g_fs<br>_V_DS≥<br>_C_iss<br>_V_GS<br>_V_DS<br>Symbol] Conatone |__Vatues_Unit<br>| typ. |max.<br>2*Ip*RDS(on)max:<br>4.4<br>dona<br>| EL|||||
|Output capacitance|_f_<br>_C_oss|||||
|Reverse transfer capacitance<br>Effective output capacitance,<br>>)<br>energy related|_C_rss<br>_V_GS<br>_V_DS<br>|<br>=0V,<br>=0V to 400V||7 | |<br>fae|||
|Effective output capacitance,<br>®)<br>time related|||fey|||
|Turn-on delay time<br>Rise time<br>Turn-off delay time<br>Fall time|_t_d(on)<br>_V_DD<br>_V_GS<br>_R_G<br>Ω<br>_t_r<br>_t_d(off)<br>_t_f<br>||to=4.5<br>| =<br>||pe |8s<br>= | 7 |e<br>|<br>0 |e||||
|Gate Charge Characteristics||||||
|Gate to source charge<br>Gate to drain charge<br>Gate charge total|_Q_gs<br>_V_DD<br>_Q_gd<br>_V_DD<br>_V_GS<br>|<br>=400V, Ip=4.5A,<br>ee|ee|= | 10]<br>22<br>ee|||
||_V_DD|||||



_E_ AR _f_ 

> 7 ISD<=ID, di/dt<=400A/us, VDClink=400V, Vpeak<VBR, DSS, Tj<Tj,max. Identical low-side and high-side switch. 

> oss while _V_ DS _C_ oss while _V_ DS 

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|Electrical Characteristics|||||||
|---|---|---|---|---|---|---|
|Parameter<br>forwardcurrent|so|so||typ.|max.||||Unit<br>||
||||_min.<br>|<br>fl|_min.<br>|typ.|<br>fl|_min.<br>|max.|<br>fl||
|Inverse diode continuous<br>forwardcurrent|FS<br>so|_T_C<br>=25°C<br>so<br>|=p|||<br>fl|| typ. |<br>fl|| max.|<br>45<br>fl||<br>|A<br>|V|
|Inverse diode direct current,<br>pulsed<br>forwardcurrent<br>Inversediodeforwardvoltage<br>Vep|_I_SM<br>so<br>_<br>Vep|||fl<br>an<br>|-||fl<br>an<br>|ot||fl<br>an<br>|42|||
|Inversediodeforwardvoltage<br>Vep|Vep||_V_GS<br>|=p|||-|||ot|||42|||V|
|Reverse recovery time<br>Inversediodeforward voltage<br>Vep|_t_rr<br>Vep ||_V_R<br>d_i_F/d_t_<br>| =p ||| - ||| ot ||| 42 |||V|
|Reverse recovery charge|_Q_rr||||||=IA|IA|
|Peak reverse recovery current|_I_rrm<br>I||= [te|[te<br>||[te<br>|=IA|[te<br>IA|
|Peak rate offall of reverse|di,/at|_T_j<br>=25°C|||<br>860|| = IA|IA<br>A/us|



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## _V_ DS 

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T C =25°C<br>EET<br>ce<br>NISSEN TTT<br> so0tms. [SSAC<br>TTT<br>TTI<br>10 V<br>V DS<br>**----- End of picture text -----**<br>


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V DS +); T j ~—-=25°C<br>V<br>fp = 10 us, GS<br>1v-——C—OO r<br>“Gr —  |<br>Ys<br>[-—-———<br>a<br>[—<br>5 10 15 Vv<br>V DS<br>**----- End of picture text -----**<br>


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≥ 

_V_ GS 

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_T_ ≤ 

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T j )<br>=3.4A, V DD = 50 V<br>ROCCE<br>IXCCETE)<br>—<br>Ne<br>Ki<br>PEIN EEE<br>TOONS<br>L<br>COPS)<br>40 60 80 100  — Cc<br>—_—_ > T j<br>**----- End of picture text -----**<br>


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**SPP04N50C3 SPA04N50C3** 

## PG-TO220-3-1, PG-TO220-3-21 

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**SPP04N50C3 SPA04N50C3** 

## PG-TO220-3-31 (FullPAK) 

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**SPP04N50C3 SPA04N50C3** 

## **Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved.** 

## **Legal Disclaimer** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. 

## **Information** 

For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). 

## **Warnings** 

Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 

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## Links

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- [Supplier page](https://es.farnell.com/en-ES/infineon/spp04n50c3xksa1/mosfet-n-coolmos-to-220/dp/2289562)
---

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