# Power MOSFET, P Channel, 60 V, 9.7 A, 0.4 ohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:2480880/)

**URL**: https://novapart.co/products/SPD09P06PLGBTMA1/power-mosfet-p-channel-60-v-97-a-04-ohm-to-252
**SKU**: SPD09P06PLGBTMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3210
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Description

Transistor Polarity:P Channel; Continuous Drain Current Id:-9.7A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.2ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 42W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 9.7A |
| Drain Source On State Resistance | 0.4ohm |
| Gate Source Threshold Voltage Max | 1.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2480880/)

**SPD09P06PL G** 

## **SIPMOS[] Power-Transistor** 

**Product Summary Feature** P-Channel | _V_ DS -60 V P-channel _R_ 0.25 Enhancement modeEnhancement mode a DS(on) | eee Logic LevelLogic Level prueb | _I_ D -9.7 | A 175°C operating temperature75°C operating temperature PG-TO252-3 • Avalanche rated Avalanche rated dv/dt rated Pb-free lead plating; RoHS compliantd _v_ /d _t_ rated 

- °  Qualified according to AEC Q101 

|**Type**|**Package**|**Lead free**|
|---|---|---|
|SPD09P06PLG|PG-TO252-3|Yes|



**==> picture [80 x 61] intentionally omitted <==**

**----- Start of picture text -----**<br>
Drain<br>pin 2<br>Gate<br>pin1<br>Source<br>pin 3<br>**----- End of picture text -----**<br>


## **Maximum Ratings** ,at _T_ j = 25 °C, unless otherwise specified 

|Gate<br>pin1<br>Drain<br>pin 2<br>Source<br>pin 3<br>**Type**<br>**Package**<br>SPD09P06PLG<br>PG-TO252-3<br>**Maximum Ratings**,at _T_j = 25 °C, unless otherwise specified= 25 °C, unless otherwise specified<br>**Lead free**<br>Yes|Gate<br>pin1<br>Drain<br>pin 2<br>Source<br>pin 3<br>**Type**<br>**Package**<br>SPD09P06PLG<br>PG-TO252-3<br>**Maximum Ratings**,at _T_j = 25 °C, unless otherwise specified= 25 °C, unless otherwise specified<br>**Lead free**<br>Yes|Gate<br>pin1<br>Drain<br>pin 2<br>Source<br>pin 3<br>**Type**<br>**Package**<br>SPD09P06PLG<br>PG-TO252-3<br>**Maximum Ratings**,at _T_j = 25 °C, unless otherwise specified= 25 °C, unless otherwise specified<br>**Lead free**<br>Yes|Gate<br>pin1<br>Drain<br>pin 2<br>Source<br>pin 3<br>**Type**<br>**Package**<br>SPD09P06PLG<br>PG-TO252-3<br>**Maximum Ratings**,at _T_j = 25 °C, unless otherwise specified= 25 °C, unless otherwise specified<br>**Lead free**<br>Yes|
|---|---|---|---|
|j = 25 °C, unless otherwise specified<br>**Parameter**|j = 25 °C, unless otherwise specified<br>**Symbol**|j = 25 °C, unless otherwise specified<br>**Value**|**Unit**|
|Continuous drain current<br>_T_C=25°C<br>_T_C=100°C|_I_D<br>pf|-9.7<br>-6.8<br>pf|A<br>pf|
|Pulsed drain current<br>_T_C=25°C|_I_D puls|-38.8||
|Avalanche energy, single pulse<br>_I_D=-9.7 A ,_V_DD=-25V,_R_GS=25|_E_AS|70|mJ|
|Avalanche energy, periodic limited by_T_jmax|_E_AR|4.2||
|jmax<br>Reverse diode d_v_/d_t_<br>_I_S=-9.7A,_V_DS=-48,d_i_/d_t_=200A/µs,_T_jmax=175°C|d_v_/d_t_<br>||6<br>||kV/µs<br>||
|Gate source voltage|_V_GS|±20|V|
|Power dissipation<br>_T_C=25°C|_P_tot<br>||42<br>||W<br>||
|Operating and storage temperature|_T_j ,_T_stg<br>a|-55... +175<br>a|°C<br>a|
|IEC climatic category; DIN IEC 68-1|jstg<br>a|55/175/56<br>a|a|



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**SPD09P06PL G** 

## **Thermal Characteristics** 

|**Thermal Characteristics**<br>||||||
|---|---|---|---|---|---|
|**Parameter**<br>**Characteristics**<br>~~ee ~~|**Symbol**<br>|**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br> ~~ee~~||||
|Thermal resistance, junction - case|_R_thJC|-|-|3.6|K/W|
|Thermal resistance, junction - ambient, leaded|_R_thJA|-|-|100||
|SMD version, device on PCB:|_R_thJA|||||
|@ min. footprint||-|-|75||
|@ 6 cm2cooling area1)||-|-|50||



|Drain-source breakdown voltage<br>_V_GS=0V,_I_D=-250µA<br>|<br>pt|_V_(BR)DSS<br>|<br>|tf<br>pt|-60<br>tf<br>pttt|-<br>tf<br>tt|-<br>tf<br>tt|V|
|---|---|---|---|---|---|
|Gate threshold voltage,_V_GS=_V_DS<br>_I_D=-250µA<br>|<br>pt|_V_GS(th)<br>|<br>|tf<br>pt|-1<br>tf<br>pttt|-1.5<br>tf<br>tt|-2<br>tf<br>tt||
|Zero gate voltage drain current<br>_V_DS=-60V,_V_GS=0V,_T_j=25°C<br>_V_DS=-60V,_V_GS=0V,_T_j=150°C<br>pt<br>tty<br>||_I_DSS<br>pt<br>tty<br>|<br>|tf|-<br>-<br>pt tt<br>tty<br>tf|-0.1<br>-10<br>tt<br>tty<br>tf|-1<br>-100<br>tt<br>tty<br>tf|µA|
|Gate-source leakage current<br>_V_GS=-20V,_V_DS=0V<br>|<br>||_I_GSS<br>|<br>|tf<br>|||-<br>tf<br>i|-10<br>tf<br>||-100<br>tf|nA<br>i|
|Drain-source on-state resistance<br>_V_GS=-4.5V,_I_D=-5.4A<br>|<br>|<br>||_R_DS(on)<br>|<br>|tf<br>||<br>|<br>|tt|-<br>tf<br>i<br>tt|0.3<br>tf<br>|<br>tt|0.4<br>tf<br>tt|i|
|Drain-source on-state resistance<br>_V_GS=-10V,_I_D=-6.8A<br>|<br>||_R_DS(on)<br>| |<br>|<br>|tt|-<br>i<br>tt|0.2<br>|<br>tt|0.25<br>tt||



1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 

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**SPD09P06PL G** 

|**Electrical Characteristics**, at<br>**Parameter**<br>~~TE~~|, at_T_j= 25 °C, unless otherwise specified<br>**Symbol**<br>**Conditions**<br>**min.**<br>~~TE~~|, at_T_j= 25 °C, unless otherwise specified<br>**Symbol**<br>**Conditions**<br>**min.**<br>~~TE~~|, at_T_j= 25 °C, unless otherwise specified<br>**Symbol**<br>**Conditions**<br>**min.**<br>~~TE~~|, at_T_j= 25 °C, unless otherwise specified<br>**Symbol**<br>**Conditions**<br>**min.**<br>~~TE~~|**Values**<br>**typ.**<br>~~TE~~|**max.**<br>~~TE~~|**Unit**<br>~~TE~~|
|---|---|---|---|---|---|---|---|
|~~TE~~|~~TE~~|~~TE~~|~~TE~~|~~TE~~|~~TE~~|~~TE~~|~~TE~~|
|**Dynamic Characteristics**||||||||
|Transconductance<br>Input capacitance<br>Output capacitance<br>Reverse transfer capacitance<br>Turn-on delay time<br>Rise time<br>Turn-off delay time<br>Fall time|_g_fs<br>_V_DS 2*_I_D*_R_DS(on)max,<br>_I_D=-5.4<br>1.8<br>3.5<br>-<br>_C_iss<br>_V_GS=0V,_V_DS=-25V,<br>_f_=1MHz<br>-<br>360<br>450<br>_C_oss<br>-<br>103<br>130<br>_C_rss<br>-<br>40<br>50<br>_t_d(on)<br>_V_DD=-30V,_V_GS=-4.5V,<br>_I_D=-5.4,_R_G=6<br>-<br>11<br>17<br>_t_r<br>_V_DD=-30V,_V_GS=-4.5V,<br>_I_D=-5.4A,_R_G=6<br>-<br>168<br>252<br>_t_d(off)<br>-<br>49<br>74<br>_t_f<br>-<br>89<br>134<br>jttt<br>Ss<br>ee<br>pj» ttf<br>|<br>Cn<br>a<br>el<br>=l ° FRE||||||S<br>pF<br>ns|
|**Gate Charge Characteristics**||||||||
|Gate to source charge||_Q_gs|_V_DD=-48V,_I_D=-9.7A|-|1.3|2|nC|
|Gate to drain charge||_Q_gd||-|5.1|7.5||
|Gate charge total||_Qg_|_V_DD=-48V,_I_D=-9.7A,|-|14|21||
||||_V_GS=0 to -10V|||||
|Gate plateau voltage||_V_(plateau)<br>_V_DD=-48V,_I_D=-9.7A||-|-4.1|-|V|
|**Reverse Diode**||||||||
|Inverse diode continuous||_I_S|_T_C=25°C|-|-|-9.7|A|
|forward current||||||||
|Inverse diode direct current,||_I_SM||-|-|-38.8||
|pulsed||||||||
|Inverse diode forward voltage||_V_SD|_V_GS=0V,_I_F=-9.7A|-|-1.1|-1.4|V|
|Reverse recovery time||_t_rr|_V_R=-30V,_I_F=_l_S,|-|52|76|ns|
|Reverse recovery charge||_Q_rr|d_i_F/d_t_=100A/µs|-|64|96|nC|



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**SPD09P06PL G** 

## **1 Power dissipation** 

_P_ tot = _f_ ( _T_ C) 

## **2 Drain current** 

_I_ D = _f_ ( _T_ C) 

parameter: _V_ GS => 10 V 

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**----- Start of picture text -----**<br>
SPD09P06PL SPD09P06PL<br>50 -11<br>W A<br>PUURARRRR RRR ERREEE TTT<br>40 HAE -9 NTT<br>\ AEN EET<br>PONE -8 \<br>35<br>-7<br>TTT  NIT\ EENEET EL<br>30<br>-6<br>TENET) aN<br>25<br>\ = FRE<br>-5<br>TTT LEE LETTE NE\<br>20<br>-4<br>PE cerereeNNEEEEEce) HELENE<br>15<br>-3<br>TTT NTTTTTT EL E E EN<br>10 \ L<br>-2<br>PEN LT<br>5 -1<br>\ TTA<br>EEE ENE ALATA \<br>0 0 EW<br>0 20 40 60 80 100 120 140 160 °C 190 0 20 40 60 80 100 120 140 160 °C 190<br>—_— _ T C —_> T C<br>tot<br>P I D<br>**----- End of picture text -----**<br>


## **3 Safe operating area** 

_I_ D = _f_ ( _V_ DS ) 

parameter : _D_ = 0 , _T_ C = 25 °C 

## **4 Transient thermal impedance** 

_Z_ thJC = _f_ ( _t_ p) 

parameter : _D_ = _t_ p/ _T_ 

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-10 2 SPD09P06PL 10 1 SPD09P06PL<br>K/W<br>A a t p = 11.0µs FCTCTC L<br>10 0 BLS R<br>AI T ae TT CTI<br>es SPPO TTT<br>-10 1<br>ee a |  100 µs SUTMST Teer ARO C<br>10 -1<br>D = 0.50<br>cere ACTTAMINS<br> 1 ms 10 -2 0.20<br>-10 0 Th adTTTNY TI  10 ms SifLIN AlmMAL SETink Tina 0.10 Ul<br>0.05<br>DC single pulse<br>e nee etre 10 -3 SiAMM um ATETET UM aRFi it; 0.02 Hill<br>0.01<br>a | See a<br>-10 -1 TM TERA TET 10 -4 aTINIE aFINE TTI WAIT TT UT<br>-10 [-1] -10 [0] -10 [1] V -10 [2] 10 [-7] 10 [-6] 10 [-5] 10 [-4] 10 [-3] 10 [-2] s 10 [0]<br>— V DS — t p<br>/  I D<br>DS<br>=  V<br>R DS(on)<br>thJC<br>D<br>I Z<br>**----- End of picture text -----**<br>


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**SPD09P06PL G** 

## **6 Typ. drain-source on resistance** 

## **5 Typ. output characteristic** 

_I_ D = _f_ ( _V_ DS); _T_ j=25°C parameter: _t_ p = 80 µs 

_R_ DS(on) = _f_ ( _I_ D) 

parameter: _V_ GS 

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**----- Start of picture text -----**<br>
SPD09P06PL SPD09P06PL<br>-24 P tot = 42W 0.8<br>A r PETE c d e f g h i<br>V GS [V]<br>-20 k j a -2.0<br>b -2.5<br>SESusueeemea [m] TE [nt] TT TET TT ETT<br>-18 i 0.6<br>c -3.0<br>any d -3.5 (ut<br>-16<br>h e -4.0 0.5<br>-14 aan /zeaeau f -4.5 EEETERETE<br>g -5.0<br>-12 g h -5.5 0.4<br>Ke i -6.0 MPR GIEGIne<br>-10<br>f j -7.0 0.3<br>-8 k -8.0<br>-6-4 par e d 0.2 coe—— j k<br>0.1 V GS [V] =<br>-2 c -3.0c -3.5d -4.0e -4.5f -5.0g -5.5h -6.0i -7.0j -8.0k<br>0 pf o o a b 0 a<br>0 -2 -4 -6 -8 V -12 0 -2 -4 -6 -8 -10 -12 -14 -16 A -20<br>V DS I D<br>7 Typ. transfer characteristics 8 Typ. forward transconductance<br>D==  f  (  V GS );  );  V DS  2 x  I D x  x  R DS(on)max g fs = f( I D);  T j=25°C<br>parameter:  t p = 80 µs = 80 µs parameter: g fs<br>25 4<br> S<br> A TTT) Pee<br>3<br>AY CO eer<br>2.5<br>15 ELTA) eee<br>2<br>10<br>1.5<br>. corey)Hy EG ee<br>1<br>5 PEEVE) |  epee<br>0.5<br>OTT Z P ELECOEE<br>0 0<br>0 1 2 3 4 5 6  V 8 0 1 2 3 4 5 6 7 8  V 10<br>V GS I D<br>DS(on)<br>D<br>I R<br>D fs<br>I g<br>**----- End of picture text -----**<br>


## **7 Typ. transfer characteristics** 

_I_ D== _f_ ( _V_ GS );  ); _V_ DS 2 x _I_ D x  x _R_ DS(on)max parameter: _t_ p = 80 µs = 80 µs 

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**SPD09P06PL G** 

## **9 Drain-source on-state resistance** 

_R_ DS(on) = _f_ ( _T_ j) 

parameter : _I_ D = -6.8 A, _V_ GS = -10 V 

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SPD09P06PL<br>0.75 eof j~ttt[TTT [ELELELT] |<br>0.6 PLE ety yy Tt<br> EEL EEL ELL |<br>0.55 ~EEEEEEELELLLL<br>0.5<br>CCC~EEEEEE<br>0.45<br>—CEEEEE ELE,<br>0.4  ELE<br>0.35<br>CPP<br>98%<br>0.3<br>SeSnege a8 4nn<br>0.25<br>CATE typ<br>0.150.2 Ee2aPZ4neneeeEley]<br>[tt ttt yl<br>0.1<br>PTEEELELLELLL<br>“CEEEEE  Eee<br>0.05<br>0 CEEEEEEE Eee<br>-60 -20 20 60 100 140 °C 200<br>T<br>j<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


## **11 Typ. capacitances** 

## _C_ = _f_ ( _V_ DS) 

## parameter: _V_ GS=0V, _f_ =1 MHz 

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10 3<br>—<br>a C rT iss<br> pF a<br>OG<br>C oss<br>10 2<br>———<br>rs Se C rss I<br>——<br>Pf fT ||<br>10 1<br>0 -5 -10 -15 -20  V -30<br>V DS<br>C<br>**----- End of picture text -----**<br>


## **10 Gate threshold voltage** 

## _V_ GS(th) = _f_ ( _T_ j) 

parameter: _V_ GS = _V_ DS, _I_ D = -250 µA 

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**----- Start of picture text -----**<br>
2.4<br> V<br>98 %<br>2 PT i] ttt ty ti dd<br>PPR EE<br>TTT ALT<br>1.8<br>=<<br>1.6 typ.<br>mht EEPT<br>1.4<br>TT LTT TONG<br>STOTT PSR I<br>1.2<br>2 %<br>EPR<br>1<br>0.8 ed N<br>tPA ETS<br>0.6 PTTTELLIN<br>ET<br>PT TTT TONG<br>0.4<br>SP<br>0.20 PTE E TLLTELL<br>-60 -20 20 60 100  °C 180<br>T<br>j<br>GS(th)<br>V<br>**----- End of picture text -----**<br>


## **12 Forward character. of reverse diode** 

## _I_ F = _f_ (VSD) 

## parameter: _T_ j , tp = 80 µs 

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**----- Start of picture text -----**<br>
-10 2 SPD09P06PL<br>==-__--_==__===<br>A<br>EEE<br>Co Ae KH<br>-10 1<br>BRED, APZaa te<br>COOMA CCC<br>|<br>-10 0<br>A T j = 25 °C typ<br>T j = 175 °C typ<br>es T j = 25 °C (98%) [| Ty]<br>T j = 175 °C (98%)<br>-10 -1 “LL LL<br>0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V -3<br>V SD<br>F<br>I<br>**----- End of picture text -----**<br>


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**SPD09P06PL G** 

## **13 Typ. avalanche energy** 

## _E_ AS = _f_ ( _T_ j) 

## par.: _I_ D = -9.7 A  , _V_ DD = -25 V, _R_ GS = 25 

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80<br> mJ<br>60<br>NEE<br>50<br>ACCC)<br>40<br>CREO)<br>30<br>20<br>-L EN LLL<br>10<br>ce NN<br>0 tt EL NL<br>25 45 65 85 105 125 145  °C 185<br>T<br>j<br>AS<br>E<br>**----- End of picture text -----**<br>


## **14 Typ. gate charge** 

## _V_ GS = _f_ ( _Q_ Gate) 

## parameter: _I_ D = -9.7 A pulsed 

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SPD09P06PL<br>-16<br>V<br>-12<br>EEEEEEEERAEEE<br>-10 0,2 V DS max<br>EE RE 0,8 e V DS max t<br>-8<br>E RAT E<br>-6<br>-4<br>PAZ<br>-2<br>foes<br>0 PCED<br>0 4 8 12 16 20 nC 28<br>Q Gate<br>GS<br>V<br>**----- End of picture text -----**<br>


## **15 Drain-source breakdown voltage** 

## _V_ (BR)DSS = _f_ ( _T_ j) 

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**----- Start of picture text -----**<br>
SPD09P06PL<br>-72 Pt tte e pet ttt TL<br>V<br>Ft tte epee ttt TT<br>Pt tte eet ttt ry<br>-68 Ft tte eet<br>Ft tty<br>-66 Pt ttt| tette t eeette LEY TL<br>Ft Ay<br>-64 Ft t T ttte et e i LAL TL<br>Fit tT T_T yee t ttt]<br>-62<br>FEE CEE<br>-60 PittsayeeeeeeeeiA TT tT t ty to<br>-58 EPA<br>BARTER<br>-56 Zi | tt ttt tt tt<br>-54 FT ttt eE ELL LL TL<br>-60 -20 20 60 100 140 °C 200<br>T j<br>(BR)DSS<br>V<br>**----- End of picture text -----**<br>


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**SPD09P06PL G** 

## **Package outline: PG-TO252-3** 

Rev 2.6 

20 11 - 10 - 12 

page 8 

**SPD09P06PL G** 

## **Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved.** 

## **Legal Disclaimer** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. 

## **Information** 

For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com ). 

## **Warnings** 

Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 

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## Links

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- [Supplier page](https://es.farnell.com/infineon/spd09p06plgbtma1/mosfet-p-ch-60v-9-7a-to-252-3/dp/2480880)
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