# Power MOSFET, N Channel, 650 V, 3.2 A, 1.4 ohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:2212860/)

**URL**: https://novapart.co/products/SPD03N60C3ATMA1/power-mosfet-n-channel-650-v-32-a-14-ohm-to-252
**SKU**: SPD03N60C3ATMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3920
**Stock**: 10+

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:3.2A; Drain Source Voltage Vds:650V; On Resistance Rds(on):1.26ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 38W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 650V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 3.2A |
| Drain Source On State Resistance | 1.4ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2212860/)

Cool MOS™ Power Transistor 

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|||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
|V|T|
|DS|jmax|
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|•|New|revolutionary|high|voltage|technology|
|•|Ultra low gate charge|(DB)|yal)|G|G|
|Periodic avalanche|rated|(|y)|(|y)|P_-T0251|P_-T0252|
|Extreme|dv/dt rated|<>|<<|
|•|
|High peak current capability|“RoHS|ZO|ESC|
|•|Improved transconductance|&|*3|8|
|¢|Pb-free|lead|plating;|ROHS|compliant|; available in Halogen free mold compound|[a)]|
|*|Qualified|according|to JEDEC”|for|target|applications|
|G|
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|pin|3|
|Maximum|Ratings|
|Parameter|Unit|
|Continuous|drain|current|Ip|A|
|T|C|=|25|°C|3.2|
|T|
|C|
|t|T|
|Pulsed|drain|current,|p|limited|by|jmax|‘pos|||96|||
|Avalanche|energy,|single|pulse|Ens|100|mJ|
|V|DD|
|Avalanche|energy,|repetitive|tar|limited|by|T|jmax|1|E|AR|0.2|
|V|DD|
|Avalanche|current,|repetitive|tap|limited|by|T|jmax|A|
|Gate source voltage static|es|V|GS|ee|
|Gate source voltage AC|(f >1Hz)|a|V|GS|±|ee|
|P|
|Power dissipation,|Tq|= 25°C|Pf|tot|8B W|
|Operating|and|storage|temperature|°C|
|Reverse diode dv/dt                                                 dv/dt                        15                     V/ns5)|
|ee|

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_R_ thJC Thermal resistance, junction - case fe |e | 88 | K/W _R_ thJA Thermal resistance, junction - ambient, leaded fe |e | 8 SMD version, device on PCB: RihJA @ min. footprint 15 @ 6 cm? cooling area 2) mt |e Soldering temperature, *) Tsold 260 |°C 1.6 mm (0.063 in.) from case for 10s fs Joo | Electrical Characteristics, at 7j=25°C unless otherwise specified Parameter Unit _min.| typ. | max. | _V V_ Drain-source breakdown voltage || (BR)DSS GS =0v,ip=0.25ma| 600] - | - | V _V_ GS breakdown voltage Drain-Source avalanche Heros) vovrsan | = | me | Gate threshold voltage µΑ _V_ GS _V_ DS _V V_ Zero gate voltage drain current |/pss DS =600V, GS =OV, yA _T_ j =25°C, 0.5 1 _T_ EEO j _V V_ GS DS Gate-source leakage current ‘less | =30v, =ov | - | - | 100 | nA _V_ GS Ω Drain-source on-state resistance |Rpsion) =10V, Ip=2A, _T_ =25°C 1.26 1.4 j _T_ j =150°C 3.8 - _R_ Gate input resistance || G RAMHz, open Drain | - | 10 | - | 

*) TO252: reflow soldering, MSL3; TO251: wavesoldering 

8 04 -0 7 

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_T_ 

|Transconductance<br>Input capacitance<br>Output capacitance||_g_fs<br>_V_DS≥<br>_C_iss<br>_V_GS<br>_V_DS<br>_f_<br>_C_oss<br>| typ. |max.<br>2*Ip*RDS(on)max:<br>3.4<br>Pe<br>|<br>ov,<br>25. | =| 400||_g_fs<br>_V_DS≥<br>_C_iss<br>_V_GS<br>_V_DS<br>_f_<br>_C_oss<br>| typ. |max.<br>2*Ip*RDS(on)max:<br>3.4<br>Pe<br>|<br>ov,<br>25. | =| 400||_g_fs<br>_V_DS≥<br>_C_iss<br>_V_GS<br>_V_DS<br>_f_<br>_C_oss<br>| typ. |max.<br>2*Ip*RDS(on)max:<br>3.4<br>Pe<br>|<br>ov,<br>25. | =| 400||_g_fs<br>_V_DS≥<br>_C_iss<br>_V_GS<br>_V_DS<br>_f_<br>_C_oss<br>| typ. |max.<br>2*Ip*RDS(on)max:<br>3.4<br>Pe<br>|<br>ov,<br>25. | =| 400||
|---|---|---|---|---|---|
|Reverse transfer capacitance<br>Turn-on delay time<br>Effective output capacitance,<br>3)<br>energy related<br>Effective output capacitance,<br>+)<br>time related|_C_rss<br>_t_d(on)<br>|<br>SO||_V_GS<br>_V_DS<br>_V_DD<br>_V_GS<br>=0V,<br>=0V to 480V<br>=350V,<br>=0/10V,-|7)<br>5 | |<br>ofRlpF<br>fy<br>- | 7 fe||
|Rise time||_t_r|_R_G<br>Ω|||
|Turn-off delay time<br>Fall time||_t_d(off)<br>_t_f<br>|<br>|||=|<br>64 |100_<br>|<br>2 | 207||
|Gate to source charge<br>Gate to drain charge<br>Gate Charge Characteristics[|<br>Gate charge total|[||_Q_gs<br>_V_DD<br>_Q_gd<br>_V_DD<br>_V_GS<br>[|<br>=wovpaze<br>[| - | 2 | -<br>|<br>7 | 6<br>=420V, Ip=3.2A,<br>13<br>17<br>a||||
||||_V_DD|||



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|j<br>Parameter||||typ.|max.|||typ.|max.|||typ.|max.||Unit<br>||
|---|---|---|---|---|---|---|
||||_min.<br>||_min.<br>|typ.||_min.<br>|max.|||
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## _V_ GS 

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## _T_ ≤ 

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_T_ j 

## _V_ (BR)DSS = f ( _T_ 

## _f_ 

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**SPD03N60C3 SPU03N60C3** 

## PG-TO-252-3-1 (D-PAK), PG-TO-252-3-11 (D-PAK), PG-TO-252-3-21 (D-PAK) 

200 2013-07-318 - 04 -0 7 

Rev. 2. 2.65 Page 11 

**SPD03N60C3 SPU03N60C3** 

## PG-TO-251-3-1 (I-PAK), PG-TO-251-3-21 (I-PAK) 

200 2013-07-318 - 04 -0 7 

Rev. 2. 2.65 Page 12 

**SPD03N60C3 SPU03N60C3** 

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Rev. 2. 2.65 P age 1 3 



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