# Power MOSFET, N Channel, 560 V, 3.2 A, 1.25 ohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:1664106RL/)

**URL**: https://novapart.co/products/SPD03N50C3ATMA1/power-mosfet-n-channel-560-v-32-a-125-ohm-to-252
**SKU**: SPD03N50C3ATMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.6500
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Channel Type | N Channel |
| Power Dissipation | 38W |
| Drain Source On State Resistance | 1.25ohm |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1664106RL/)

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Cool MOS™ Power Transistor<br>**----- End of picture text -----**<br>


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V T<br>DS jmax<br>Ω<br>G<br>(GS P_-T0252<br>**----- End of picture text -----**<br>


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; available in Halogen free mold compound[a)] 

## G 

Continuous drain current Ip A _T_ C = 25 °C 3.2 _T_ C - 100 °C ae _t T_ Pulsed drain current, p limited by jmax ‘pos | 96 | Avalanche energy, single pulse Eas 100 mJ _V_ DD Avalanche energy, repetitive tap limited by _T_ jmax 1 _E_ AR 0.2 _V_ DD Avalanche current, repetitive tap limited by _T_ jmax A Gate source voltage | _V_ GS ov Gate source voltage AC (f >1Hz) a _V_ GS ± ee _P_ Power dissipation, Ta = 25°C Pf tot 8B W Operating and storage temperature °C Reverse diode dv/dt 5 ) dv/dt 15 V/ns ee 

a) non-Halogen free (OPN: SPD03N50C3BT); Halogen free (OPN: SPD03N50C3AT) 

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Rev. 2. 2.65 P 

_V T_ DS j 

|Parameter<br>Drain-sourcebreakdownvoltage||||||||=0v,ip=0.25ma|||typ.|max.|||typ.|max.|||typ.|max.||Unit<br>|<br>|V|
|---|---|---|---|---|---|---|
||||_min.<br>|<br>=0v,ip=0.25ma|500]|_min.<br>|typ.|<br>500]-||_min.<br>|max.|<br>|-|||
|Drain-sourcebreakdownvoltage||<br>Drain-Sourceavalanche<br>Heros)|_V_(BR)DSS<br>||<br>Heros)|_V_GS<br>||=0v,ip=0.25ma|<br>Heros)voversan|||<br>=0v,ip=0.25ma|500]<br>|=||| typ. |<br>500]-|<br>|ooo|| max.|<br>|-|<br>|||<br>|V|
|Drain-source breakdown voltage||<br>Drain-Sourceavalanche<br>Heros)<br>breakdown voltage|||<br>Heros)|_V_GS<br>|| =0v,ip=0.25ma|<br>Heros)voversan||=0v,ip=0.25ma| 500]<br>|=||500] - |<br>|ooo|| - |<br>|||
|Drain-Sourceavalanche<br>Heros)<br>Gate threshold voltage|Heros)|µΑ _V_GS _V_DS<br>Heros) voversan ||| = ||| ooo||||
|Zero gate voltage drain current<br>Gate-sourceleakagecurrent<br>‘less||/pss<br>‘less||_V_DS<br>_V_GS<br>_T_j<br>_T_j<br>=500V,<br>=0V,<br>=25°C,<br>=150°C<br>|=20v,=ov|||-||0.1<br>-<br>|-||1<br>100<br>|100||yA<br>|nA|
|Gate-sourceleakagecurrent<br>‘less|‘less||_V_GS<br>_V_DS<br>|=20v,=ov|||-|||-|||100|||nA|
|Gate-source leakage current<br>‘less<br>Drain-source on-state resistance |<br>Gateinputresistance|‘less |<br>|Rpsion)<br>|||_V_GS<br>_T_j<br>_T_j<br>| =20v, =ov |<br>=10V, Ip=2A,<br>=25°C<br>=150°C<br>||RAMHz,open Drain||| - |<br>|-||| - |<br>1.25<br>3.4<br>|15||| 100 |<br>1.4<br>-<br>|-||Ω<br>|nA<br>||
|Gateinputresistance|_R_G<br>|||||RAMHz,open Drain|||-|||15|||-|||



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Rev. 2. 2.65 P 

|Parameter|fo<br>||2*ID*RDS(on)max:<br>forrrm||typ.|max.||typ.|max.||typ.|max.|Unit<br>S|
|---|---|---|---|---|---|---|
||||_min.<br>|<br>||_min.<br>|typ.|<br>3.5<br>||_min.<br>|max.<br>|||
|Transconductance|_g_fs<br>fo<br>|<br>P||_V_DS≥<br>2*ID*RDS(on)max:<br>forrrm<br>ov,<br>25,|<br>||<br>|<br>|=||| typ. |<br>3.5<br>|<br>=|350|||max.<br>|<br>||S<br>=F|
|Input capacitance|_C_iss<br>fo<br>|<br>P|FM<br>||_V_GS<br>_V_DS<br>_f_<br>fo rrrm<br>ov,<br>25, |<br>FM||<br>|=|<br>=||3.5<br>|<br>=|350|<br>|0]||<br>|<br>0]|S<br>=F<br>||
|Output capacitance|_C_oss<br>P|FM<br>|||| =|<br>=||=|350|<br>|0]<br>5|||<br>0]<br>||||
|Reverse transfer capacitance|_C_rss<br>FM<br>|||= |<br>7)|| 0]<br>7)<br>5||0]<br>7)<br>||||
|Effective output capacitance,<br>3)<br>energy related||_V_GS<br>_V_DS<br>=0V,<br>=0V to 400V<br>=350V,<br>=0/10V,—|fe|5 |<br>fe|| |<br>fepF||<br>pF<br>|ns|
|Effective output capacitance,<br>+)<br>time related<br>SO|SO||fy<br>—-||fy<br>|tof|fy<br>tof-|||
|Turn-on delay time<br>SO|_t_d(on)<br>SO<br>ee|_V_DD<br>_V_GS<br>_R_G<br>Ω<br>=350V,<br>=0/10V, —<br>ee<br>ee|—-|||tof|tof-|||ns|
|Rise time<br>SO|_t_r<br>SO<br>ee||— - ||| tof|tof - |||
|Turn-off delay time|_t_d(off)<br>ee<br>||||||e<br>8|||e<br>|||
|Fall time|_t_f<br>||||||<br>8|||<br>|||



1Repetitve avalanche causes additional power losses that can be calculated asPay= _E_ AR _ *.. _f_ 

5 ISD<=ID, di/dt<=400A/us, VDClink=400V, Vpeak<VBR, DSS, Tj<Tj,max. Identical low-side and high-side switch. 

oss _V_ DS _C_ oss _V_ DS 

8- 04 - 10 

Rev. 2. 2.65 P 

|Electrical Characteristics, at|_T_j|= 25 °C, unless|= 25 °C, unless|otherwise|
|---|---|---|---|---|
|Parameter<br>Inverse diode continuous||i<br>Is|_T_C<br>=25°C||
|forward current|||||
|Inverse diode direct current,||_I_SM|||
|pulsed|||||
||||_V_GS||
|Reverse recovery time<br>Reverse recovery charge<br>Peak reverse recovery current||_t_rr<br>_Q_rr<br>_I_rrm<br>|<br>|<br>a|_V_R<br>d_i_F/d_t_<br>=4ov.ils,<br>stows||



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Rev. 2. 2.65 P 

_T_ C 

_T_ C 

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_V_ DS 

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Rev. 2. 2.65 P 

## _V T_ DS ); = j -=150°C 

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## _V_ GS 

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_T_ j ) =2.4A, _V_ DD 

_T_ j 

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Rev. 2. **2.6** 5 P 

## _V_ (BR)DSS = f ( _T_ 

## _f_ 

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woe<br>eT<br>woe mo p tT ET AT<br>aot tty<br>wo AT<br>wee<br>oa,<br>m4<br>eeeCO “ 60 —--20 20 LE 60 100 °C<br>——_ > T j<br>(BR)DSS<br>V<br>**----- End of picture text -----**<br>


_V_ DS 

16 Typ. _C_ oss _f V_ Eoss= ( DS ) 

_f_ 

_V_ GS 

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Rev. 2. 2.65 P 

Rev. 2. 2.65 P age 9 8- 04 - 10 

## PG-TO252-3-1, PG-TO252-3-11, PG-TO252-3-21 (D-PAK) 

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Rev. 2. 2.65 P 

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Rev. 2. 2.65 P 



## Links

- [View this product on Novapart](https://novapart.co/products/SPD03N50C3ATMA1/power-mosfet-n-channel-560-v-32-a-125-ohm-to-252)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/infineon/spd03n50c3atma1/mosfet-n-to-252/dp/1664106RL)
---

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