# Power MOSFET, N Channel, 500 V, 21 A, 0.16 ohm, TO-263 (D2PAK), Surface Mount

![Product image](https://novapart.co/image/farnell:2480878RL/)

**URL**: https://novapart.co/products/SPB21N50C3ATMA1/power-mosfet-n-channel-500-v-21-a-016-ohm-to-263
**SKU**: SPB21N50C3ATMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.4200
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.16ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Pow

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 208W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-263 (D2PAK) |
| Drain Source Voltage Vds | 500V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 21A |
| Drain Source On State Resistance | 0.16ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2480878RL/)

**SPB21N50C3** 

## **Cool MOS™ Power Transistor** 

## **Feature** 

**==> picture [145 x 53] intentionally omitted <==**

**----- Start of picture text -----**<br>
||||||||
|---|---|---|---|---|---|---|
|V|DS|@|T|jmax|560|V|
|R|0.19|Ω|
|DS(on)|
|I|D|21|A|

**----- End of picture text -----**<br>


- New revolutionary high voltage technology 

- Ultra low gate charge 

PG-TO263 

- Periodic avalanche rated 

- Extreme d _v_ /d _t_ rated 

- Ultra low effective capacitances 

- Improved transconductance 

**==> picture [350 x 29] intentionally omitted <==**

**----- Start of picture text -----**<br>
|||||
|---|---|---|---|
|Type|Package|Ordering Code|Marking|
|SPB21N50C3|PG-TO263|Q67040-S4566|21N50C3|

**----- End of picture text -----**<br>


## **Maximum Ratings** 

**==> picture [492 x 308] intentionally omitted <==**

**----- Start of picture text -----**<br>
|||||||||||
|---|---|---|---|---|---|---|---|---|---|
|Parameter|Symbol|Value|Unit|
|SPB|
|Continuous drain current|I|D|A|
|T|= 25 °C|21|
|C|
|T|= 100 °C|13.1|
|C|
|Pulsed drain current,|t|p|limited by|T|jmax|I|D puls|63|A|
|Avalanche energy, single pulse|E|AS|690|mJ|
|I|D=10A,|V|DD|=50V|
|Avalanche energy, repetitive|t|AR limited by|T|jmax|[2)]|E|AR|1|
|I|D=21A,|V|DD|=50V|
|Avalanche current, repetitive|t|AR limited by|T|jmax|I|AR|21|A|
|Gate source voltage|V|GS|±20|V|
|Gate source voltage AC (f >1Hz)|V|GS|±30|
|Power dissipation,|T|C = 25°C|P|tot|208|W|
|Operating and storage temperature|T|j|,|T|stg|-55...+150|°C|
|Reverse diode dv/dt|7)|dv/dt|15|V/ns|

**----- End of picture text -----**<br>


2005-11-07 

Rev. 2.3 

Page 1 

**SPB21N50C3** 

|**Maximum Ratings**|**Maximum Ratings**|||||
|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Value**|||**Unit**|
|Drain Source voltage slope<br>_V_DS= 400 V,_I_D= 21 A,_T_j= 125 °C|d_v_/d_t_|50|||V/ns|
|**Thermal Characteristics**||||||
|**Parameter**|**Symbol**|**Values**|||**Unit**|
|||**min.**|**typ.**|**max.**||
|Thermal resistance, junction - case|_R_thJC|-|-|0.6|K/W|
|Thermal resistance, junction - case, FullPAK|_R_thJCFP|-|-|3.6||
|Thermal resistance, junction - ambient, leaded|_<br>_R_thJA|-|-|62||
|Thermal resistance, junction - ambient, FullPAK|_R_thJAFP|-|-|80||
|SMD version, device on PCB:<br>@ min. footprint<br>@ 6 cm2cooling area3)|_<br>_R_thJA|-<br>-|-<br>35|62<br>-||
|Soldering temperature,reflow soldering, MSL1<br>1.6 mm (0.063 in.) from case for 10s 4)|_T_sold|-|-|260|°C|



**Electrical Characteristics,** at _T_ j=25°C unless otherwise specified 

|<br>**Parameter**|<br>**Symbol**|<br>**Conditions**|<br>**Values**|<br>**Values**|<br>**Values**|**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|Drain-source breakdown voltage|_V_(BR)DSS|_V_GS=0V,_I_D=0.25mA|500|-|-|V|
|Drain-Source avalanche<br>breakdown voltage|_V_(BR)DS|_V_GS=0V,_I_D=21A|-|600|-||
|Gate threshold voltage|_V_GS(th)|_I_D=1000µA,_V_GS=VD|S<br>2.1|3|3.9||
|Zero gate voltage drain current|_I_DSS|_V_DS=500V,_V_GS=0V,<br>_T_j=25°C<br>_T_j=150°C|-<br>-|0.1<br>-|1<br>100|µA|
|Gate-source leakage current|_I_GSS|_V_GS=20V,_V_DS=0V|-|-|100|nA|
|Drain-source on-state resistance|_R_DS(on)|_V_GS=10V,_I_D=13.1A<br>_T_j=25°C<br>_T_j=150°C|-<br>-|0.16<br>0.54|0.19<br>-|Ω|
|Gate input resistance|_R_G|_f_=1MHz, open drain|-|0.53|-||



2005-11-07 

Rev. 2.3 

Page 2 

**SPB21N50C3** 

## **Electrical Characteristics** 

|**Electrical Characteristics**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Conditions**|**Values**|||**Unit**|
||||**min.**|**typ.**|**max.**||
|Transconductance|_g_fs|_V_DS≥2*_I_D*_R_DS(on)max,<br>_I_D=13.1A|-|18|-|S|
|Input capacitance|_C_iss|_V_GS=0V,_V_DS=25V,<br>_f_=1MHz|-|2400|-|pF|
|Output capacitance|_C_oss||-|1200|-||
|Reverse transfer capacitance|_C_rss||-|30|-||
|Effective output capacitance,5)<br>energy related|_C_o(er)|_V_GS=0V,_V_DS=400V|-|87|-||
|Effective output capacitance,6)<br>time related|_C_o(tr)||-|181|-||
|Turn-on delay time|_t_d(on)|_V_DD=380V,_V_GS=0/10V,<br>_I_D=21A,<br>_R_G=3.6Ω|-|10|-|ns|
|Rise time|_t_r||-|5|-||
|Turn-off delay time|_t_d(off)||-|67|-||
|Fall time|_t_f||-|4.5|-||



1Limited only by maximum temperature 

2Repetitve avalanche causes additional power losses that can be calculated as _P_ AV= _E_ AR * _f_ . 

3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 

4Soldering temperature for TO-263: 220°C, reflow 

5 _C_ o(er) is a fixed capacitance that gives the same stored energy as _C_ oss while _V_ DS is rising from 0 to 80% _V_ DSS. 

6 _C_ o(tr) is a fixed capacitance that gives the same charging time as _C_ oss while _V_ DS is rising from 0 to 80% _V_ DSS. 

7 ISD<=ID, di/dt<=200A/us, VDClink=400V, Vpeak<VBR, DSS, Tj<Tj,max. 

Identical low-side and high-side switch. 

2005-11-07 

Rev. 2.3 

Page 3 

**SPB21N50C3** 

## **Electrical Characteristics** 

|**Electrical Characteristics**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Conditions**|**Values**|||**Unit**|
||||**min.**|**typ.**|**max.**||
|Inverse diode continuous<br>forward current|_I_S|_T_C=25°C|-|-|21|A|
|Inverse diode direct current,<br>pulsed|_I_SM||-|-|63||
|Inverse diode forward voltage|_V_SD|_V_GS=0V,_I_F=_I_S|-|1|1.2|V|
|Reverse recovery time|_t_rr|_V_R=380V,_I_F=_I_S,<br>d_i_F/d_t_=100A/µs|-|450|-|ns|
|Reverse recovery charge|_Q_rr||-|9|-|µC|
|Peak reverse recovery current|_I_rrm||-|60|-|A|
|Peak rate of fall of reverse<br>recovery current|_di_rr_/dt_|_T_j=25°C|-|1200|-|A/µs|



## **Typical Transient Thermal Characteristics** 

|**Symbol**||**Value**|**Value**|**Value**|**Value**|**Value**|**Value**|**Value**|**Unit**|**Unit**|||**Symbol**|**Symbol**|**Symbol**|**Value**|**Value**|**Value**|**Value**|**Unit**|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|||**SPB**||||||||||||||**SPB**|||||
|_R_th1||0.00769|||||||K/W||||_C_th1|||0.0003763||||Ws/K|
|_R_th2||0.015|||||||||||_C_th2|||0.001411|||||
|_R_th3||0.029|||||||||||_C_th3|||0.001931|||||
|_R_th4||0.114|||||||||||_C_th4|||0.005297|||||
|_R_th5||0.136|||||||||||_C_th5|||0.012|||||
|_R_th6||0.059|||||||||||_C_th6|||0.091|||||
|||Ptot(t)|||||||||||External Heatsink<br>**Tcase**<br>**Tamb**<br>Rth,n<br>Cth,n||||||||
||||Ptot(t)||**Tj**<br>Cth1<br>Cth2<br>Rth1||||||||Rth,n||||||||
||||||||||||||||||||||
||||||||||||||||||||||
||||||||||||||Cth,n||||||||
||||||||||||||||||||||
||||||||||||||||||||||
||||||||||||||||||||||
||||||||||||||||||||||



2005-11-07 

Rev. 2.3 

Page 4 

**SPB21N50C3** 

## **1 Power dissipation** 

## _P_ tot = _f_ ( _T_ C ) 

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**----- Start of picture text -----**<br>
SPP21N50C3<br>240<br>W<br>200<br>180<br>160<br>140<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>0 20 40 60 80 100 120 °C 160<br>T C<br>tot<br>P<br>**----- End of picture text -----**<br>


## **3 Safe operating area** 

## _I_ D = _f_ ( _V_ DS ) 

parameter : _D_ = 0 , _T_ C =25°C 

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**----- Start of picture text -----**<br>
10 2<br> A<br>10 1<br>10 0<br>tp = 0.001 ms<br>tp = 0.01 ms<br>tp = 0.1 ms<br>10 -1 tp = 1 ms<br>tp = 10 ms<br>DC<br>10 -2<br>10 [0] 10 [1] 10 [2]  V 10 [3]<br>V DS<br>I D<br>**----- End of picture text -----**<br>


## **2 Power dissipation FullPAK** 

## _P_ tot = _f_ ( _T_ C ) 

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**----- Start of picture text -----**<br>
35<br> W<br>25<br>20<br>15<br>10<br>5<br>0<br>0 20 40 60 80 100 120  °C 160<br>T C<br>tot<br>P<br>**----- End of picture text -----**<br>


## **4 Safe operating area FullPAK** 

## _I_ D = _f_ ( _V_ DS ) 

## parameter: _D_ = 0, _T_ C = 25°C 

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**----- Start of picture text -----**<br>
10 2<br> A<br>10 1<br>10 0<br>tp = 0.001 ms<br>tp = 0.01 ms<br>10 -1 tp = 0.1 ms<br>tp = 1 ms<br>tp = 10 ms<br>DC<br>10 -2<br>10 [0] 10 [1] 10 [2]  V 10 [3]<br>V DS<br>I D<br>**----- End of picture text -----**<br>


2005-11-07 

Rev. 2.3 

Page 5 

**SPB21N50C3** 

## **5 Transient thermal impedance** 

_Z_ thJC = _f_ ( _t_ p) 

parameter: _D_ = _t_ p/ _T_ 

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**----- Start of picture text -----**<br>
10 0<br> K/W<br>10 -1<br>10 -2 D = 0.5<br>D = 0.2<br>D = 0.1<br>D = 0.05<br>D = 0.02<br>10 -3 D = 0.01<br>single pulse<br>10 -4<br>10 [-7] 10 [-6] 10 [-5] 10 [-4] 10 [-3] 10 [-2]  s 10 [0]<br>t<br>p<br>thJC<br>Z<br>**----- End of picture text -----**<br>


## **7 Typ. output characteristic** 

_I_ D = _f_ ( _V_ DS ); _T_ j =25°C 

parameter: _t_ p = 10 µs, _V_ GS 

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**----- Start of picture text -----**<br>
70<br> A<br>Vgs = 20V<br>Vgs = 7V<br>Vgs = 6.5V<br>50<br>Vgs = 6V<br>40<br>Vgs = 5.5V<br>30<br>Vgs = 5V<br>20<br>Vgs = 4.5V<br>10<br>Vgs = 4V<br>0<br>0 5 10 15  V 25<br>V DS<br>I D<br>**----- End of picture text -----**<br>


## **6 Transient thermal impedance FullPAK** 

_Z_ thJC = _f_ ( _t_ p ) parameter: _D_ = _t_ p / _t_ 

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**----- Start of picture text -----**<br>
10 1<br> K/W<br>10 0<br>10 -1 D = 0.5<br>D = 0.2<br>D = 0.1<br>D = 0.05<br>D = 0.02<br>10 -2 D = 0.01<br>single pulse<br>10 -3<br>10 [-6] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1]   s 10 [1]<br>t<br>p<br>thJC<br>Z<br>**----- End of picture text -----**<br>


## **8 Typ. output characteristic** 

_I_ D = _f_ ( _V_ DS ); _T_ j =150°C parameter: _t_ p = 10 µs, _V_ GS 

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**----- Start of picture text -----**<br>
40<br> A<br>Vgs = 20V<br>Vgs = 7V<br>30 Vgs = 6V<br>Vgs = 5.5V<br>25<br>Vgs = 5V<br>20<br>15 Vgs = 4.5V<br>10<br>Vgs = 4V<br>5<br>0<br>0 5 10 15  V 25<br>V DS<br>I D<br>**----- End of picture text -----**<br>


2005-11-07 

Rev. 2.3 

Page 6 

**SPB21N50C3** 

## **9 Typ. drain-source on resistance** 

_R_ DS(on)= _f_ ( _I_ D) 

parameter: _T_ j =150°C, _V_ GS 

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**----- Start of picture text -----**<br>
1.5<br>Ω Vgs = 4V<br>Vgs = 4.5V<br>Vgs = 5V<br>Vgs = 5.5V<br>Vgs = 6V<br>Vgs = 20V<br>0.9<br>0.6<br>0.3<br>0 5 10 15 20 25 30  A 40<br>I D<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


## **11 Typ. transfer characteristics** 

_I_ D= _f_ ( _V_ GS ); _V_ DS≥ 2 x _I_ D x _R_ DS(on)max parameter: _t_ p = 10 µs 

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**----- Start of picture text -----**<br>
70<br> A<br>Tj = 25°C<br>50<br>Tj = 150°C<br>40<br>30<br>20<br>10<br>0<br>0 2 4 6  V 10<br>V GS<br>I D<br>**----- End of picture text -----**<br>


## **10 Drain-source on-state resistance** 

_R_ DS(on) = _f_ ( _T_ j) 

parameter : _I_ D = 13.1 A, _V_ GS = 10 V 

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**----- Start of picture text -----**<br>
SPP21N50C3<br>1.1<br>Ω<br>0.9<br>0.8<br>0.7<br>0.6<br>0.5<br>0.4<br>0.3<br>98%<br>0.2<br>typ<br>0.1<br>0<br>-60 -20 20 60 100 °C 180<br>T<br>j<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


## **12 Typ. gate charge** 

_V_ GS = _f_ ( _Q_ Gate) 

parameter: _I_ D = 21 A pulsed 

**==> picture [230 x 276] intentionally omitted <==**

**----- Start of picture text -----**<br>
SPP21N50C3<br>16<br>V<br>12<br>10 0,2 V DS max 0,8 V DS max<br>8<br>6<br>4<br>2<br>0<br>0 20 40 60 80 100 nC 140<br>Q Gate<br>GS<br>V<br>**----- End of picture text -----**<br>


2005-11-07 

Rev. 2.3 

Page 7 

**SPB21N50C3** 

## **13 Forward characteristics of body diode** 

_I_ F = _f_ (VSD) 

parameter: _T_ j , tp = 10 µs 

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**----- Start of picture text -----**<br>
10 2 SPP21N50C3<br>A<br>10 1<br>10 0<br>T j = 25 °C typ<br>T j = 150 °C typ<br>T j = 25 °C (98%)<br>T j = 150 °C (98%)<br>10 -1<br>0 0.4 0.8 1.2 1.6 2 2.4 V 3<br>V SD<br>I F<br>**----- End of picture text -----**<br>


## **15 Avalanche energy** 

_E_ AS = _f_ ( _T_ j ) 

## **14 Avalanche SOA** 

_I_ AR = _f_ ( _t_ AR) 

par.: _T_ j ≤ 150 °C 

**==> picture [232 x 269] intentionally omitted <==**

**----- Start of picture text -----**<br>
20<br> A<br>Tj(Start)=25°C<br>10<br>5 Tj(Start)=125°C<br>010 [-3] 10 [-2] 10 [-1] 10 [0] 10 [1] 10 [2]  µs 10 [4]<br>t AR<br>I AR<br>**----- End of picture text -----**<br>


## **16 Drain-source breakdown voltage** 

_V_ (BR)DSS = _f_ ( _T_ j ) 

## par.: _I_ D = 10 A, _V_ DD = 50 V 

**==> picture [484 x 276] intentionally omitted <==**

**----- Start of picture text -----**<br>
SPP21N50C3<br>750 600<br>mJ V<br>600 570<br>550 560<br>500 550<br>450 540<br>400 530<br>350 520<br>300 510<br>250 500<br>200 490<br>150 480<br>100 470<br>50 460<br>0 450<br>20 40 60 80 100 120 °C 160 -60 -20 20 60 100 °C 180<br>T T<br>j j<br>AS (BR)DSS<br>E V<br>**----- End of picture text -----**<br>


2005-11-07 

Rev. 2.3 

Page 8 

**SPB21N50C3** 

## **17 Avalanche power losses** 

## _P_ AR = _f_ ( _f_ ) 

## parameter: _E_ AR =1mJ 

**==> picture [233 x 267] intentionally omitted <==**

**----- Start of picture text -----**<br>
500<br> W<br>300<br>200<br>100<br>010 [4] 10 [5]  Hz 10 [6]<br>f<br>AR<br>P<br>**----- End of picture text -----**<br>


## **18 Typ. capacitances** 

## _C_ = _f_ ( _V_ DS ) 

## parameter: _V_ GS =0V, _f_ =1 MHz 

**==> picture [230 x 273] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 5<br> pF<br>10 4<br>Ciss<br>10 3<br>Coss<br>10 2<br>Crss<br>10 1<br>10 0<br>0 100 200 300  V 500<br>V DS<br>C<br>**----- End of picture text -----**<br>


## **19 Typ.** _C_ oss **stored energy** 

## _E_ oss= _f_ ( _V_ DS ) 

**==> picture [230 x 269] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br> µJ<br>6<br>4<br>2<br>0<br>0 50 100 150 200 250 300 350 400  V 500<br>V DS<br>oss<br>E<br>**----- End of picture text -----**<br>


2005-11-07 

Rev. 2.3 

Page 9 

**SPB21N50C3** 

Definition of diodes switching characteristics 

2005-11-07 

Rev. 2.3 

Page 10 

**21** 

## PG-TO263-3-2, PG-TO263-3-5, PG-TO263-3-22 

5 - 11-07 

Rev. 2.3                                                                P 

**SPB21N50C3** 

## **Published by** 

**Infineon Technologies AG** _**,**_ **Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved.** 

## **Attention please!** 

The information herein is given to describe certain components and shall not be considered as warranted characteristics. 

Terms of delivery and rights to technical change reserved. 

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. 

Infineon Technologies is an approved CECC manufacturer. 

## **Information** 

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). 

## **Warnings** 

Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. 

Infineon Technologies Components may only be used in life-support devices or systems  with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 

2005-11-07 

Rev. 2.3 

Page 12 



## Links

- [View this product on Novapart](https://novapart.co/products/SPB21N50C3ATMA1/power-mosfet-n-channel-500-v-21-a-016-ohm-to-263)
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- [Supplier page](https://es.farnell.com/infineon/spb21n50c3atma1/mosfet-n-ch-500v-21a-to-263-3/dp/2480878RL)
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