# Power MOSFET, N Channel, 650 V, 11 A, 0.38 ohm, TO-263 (D2PAK), Surface Mount

![Product image](https://novapart.co/image/farnell:2212858/)

**URL**: https://novapart.co/products/SPB11N60C3ATMA1/power-mosfet-n-channel-650-v-11-a-038-ohm-to-263
**SKU**: SPB11N60C3ATMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.3700
**Stock**: 500+
**Lead Time**: 106 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.34ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 125W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-263 (D2PAK) |
| Drain Source Voltage Vds | 650V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 11A |
| Drain Source On State Resistance | 0.38ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2212858/)

**SPB11N60C3** 

## **Cool MOS™ Power Transistor** 

## **Feature** 

- New revolutionary high voltage technology 

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||||||||
|---|---|---|---|---|---|---|
|V|DS|@|T|jmax|650|V|
|R|0.38|Ω|
|DS(on)|
|I|D|11|A|

**----- End of picture text -----**<br>


- Ultra low gate charge 

- Periodic avalanche rated 

PG-TO263 

- Extreme d _v_ /d _t_ rated 

- High peak current capability 

- Improved transconductance 

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|||||
|---|---|---|---|
|Type|Package|Ordering Code|Marking|
|SPB11N60C3|PG-TO263|Q67040-S4396|11N60C3|

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## **Maximum Ratings** 

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||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|
|Parameter|Symbol|Value|Unit|
|SPB|
|/|/-——|
|Continuous drain current|I|D|A|
|T|= 25 °C|11|
|C|
|T|= 100 °C|7|
|C|
|Pulsed drain current,|t|p|limited by|T|jmax|I|D puls|33|A|
|Avalanche energy, single pulse|E|AS|340|mJ|
|I|D=5.5A,|V|DD|=50V|
|Avalanche energy, repetitive|t|AR limited by|T|jmax|[2)]|pf|E|AR|0.6|||
|I|D=11A,|V|DD|=50V|
|Avalanche current, repetitive|t|AR limited by|T|jmax|ff|I|AR|11|A|
|Gate source voltage static|fT|V|GS|±20|V|
|Gate source voltage AC (f >1Hz)|ee|V|GS|±30|ee|
|Power dissipation,|T|C = 25°C|fT|P|tot|125|W|
|Operating and storage temperature|T|j|,|T|stg|-55...+150|°C|
|Reverse diode dv/dt                                                     dv/dt                          15                 V/ns|7)|
|a|

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2007-12-14 

Rev. 2. 6 

Page 1 

**SPB11N60C3** 

|**Maximum Ratings**|**Maximum Ratings**|||||
|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Value**|||**Unit**|
|Drain Source voltage slope<br>_V_DS= 480 V,_I_D= 11 A,_T_j= 125 °C|d_v_/d_t_|50|||V/ns|
|**Thermal Characteristics**||||||
|**Parameter**|**Symbol**|**Values**|||**Unit**|
|||**min.**|**typ.**|**max.**||
|Thermal resistance, junction - case|_R_thJC|-|-|1|K/W|
|||-|-|||
|Thermal resistance, junction - ambient, leaded|_R_thJA|-|-|62||
|||-|-|||
|SMD version, device on PCB:<br>@ min. footprint<br>@ 6 cm2cooling area3)|_R_thJA|-<br>-|-<br>35|62<br>-||
|Soldering temperature,reflow soldering, MSL1<br>1.6 mm (0.063 in.) from case for 10s|_T_sold|-|-|260|°C|



## **Electrical Characteristics,** at _T_ j=25°C unless otherwise specified 

|<br>**Parameter**|<br>**Symbol**|<br>**Conditions**|<br>**Values**|<br>**Values**|<br>**Values**|**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|Drain-source breakdown voltage|_V_(BR)DSS|_V_GS=0V,_I_D=0.25mA|600|-|-|V|
|Drain-Source avalanche<br>breakdown voltage|_V_(BR)DS|_V_GS=0V,_I_D=11A|-|700|-||
|Gate threshold voltage|_V_GS(th)|_I_D=500µA,_V_GS=VDS|2.1|3|3.9||
|Zero gate voltage drain current|_I_DSS|_V_DS=600V,_V_GS=0V,<br>_T_j=25°C<br>_T_j=150°C|-<br>-|0.1<br>-|1<br>100|µA|
|Gate-source leakage current|_I_GSS|_V_GS=30V,_V_DS=0V|-|-|100|nA|
|Drain-source on-state resistance|_R_DS(on)|_V_GS=10V,_I_D=7A<br>_T_j=25°C<br>_T_j=150°C|-<br>-|0.34<br>0.92|0.38<br>-|Ω|
|Gate input resistance|_R_G|_f_=1MHz, open drain|-|0.86|-||



200 7 -12-14 

Rev. 2. 6 

Page 2 

**SPB11N60C3** 

## **Electrical Characteristics** 

|**Electrical Characteristics**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Conditions**|**Values**|||**Unit**|
||||**min.**|**typ.**|**max.**||
|Transconductance|_g_fs|_V_DS≥2*_I_D*_R_DS(on)max,<br>_I_D=7A|-|8.3|-|S|
|Input capacitance|_C_iss|_V_GS=0V,_V_DS=25V,<br>_f_=1MHz|-|1200|-|pF|
|Output capacitance|_C_oss||-|390|-||
|Reverse transfer capacitance|_C_rss||-|30|-||
|Effective output capacitance,5)<br>energy related|_C_o(er)|_V_GS=0V,<br>_V_DS=0V to 480V|-|45|-||
|Effective output capacitance,6)<br>time related|_C_o(tr)||-|85|-||
|Turn-on delay time|_t_d(on)|_V_DD=380V,_V_GS=0/10V,<br>_I_D=11A,<br>_R_G=6.8Ω|-|10|-|ns|
|Rise time|_t_r||-|5|-||
|Turn-off delay time|_t_d(off)||-|44|70||
|Fall time|_t_f||-|5|9||



1Limited only by maximum temperature 

2Repetitve avalanche causes additional power losses that can be calculated as _P_ AV= _E_ AR * _f_ . 

3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 

4 _C_ o(er) is a fixed capacitance that gives the same stored energy as _C_ oss while _V_ DS is rising from 0 to 80% _V_ DSS. 

5 _C_ o(tr) is a fixed capacitance that gives the same charging time as _C_ oss while _V_ DS is rising from 0 to 80% _V_ DSS. 

6 ISD<=ID, di/dt<=400A/us, VDClink=400V, Vpeak<VBR, DSS, Tj<Tj,max. 

Identical low-side and high-side switch. 

200 7 -12-14 

Rev. 2. 6 

Page 3 

**SPB11N60C3** 

## **Electrical Characteristics** 

|**Electrical Characteristics**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Conditions**|**Values**|||**Unit**|
||||**min.**|**typ.**|**max.**||
|Inverse diode continuous<br>forward current|_I_S|_T_C=25°C|-|-|11|A|
|Inverse diode direct current,<br>pulsed|_I_SM||-|-|33||
|Inverse diode forward voltage|_V_SD|_V_GS=0V,_I_F=_I_S|-|1|1.2|V|
|Reverse recovery time|_t_rr|_V_R=480V,_I_F=_I_S,<br>d_i_F/d_t_=100A/µs|-|400|600|ns|
|Reverse recovery charge|_Q_rr||-|6|-|µC|
|Peak reverse recovery current|_I_rrm||-|41|-|A|
|Peak rate of fall of reverse<br>recovery current|_di_rr_/dt_|_T_j=25°C|-|1200|-|A/µs|



## **Typical Transient Thermal Characteristics** 

|**Symbol**||**Value**|**Value**|**Value**|**Value**|**Value**|**Value**|**Value**|**Unit**|**Unit**|||**Symbol**|**Symbol**|**Symbol**|**Value**|**Value**|**Value**|**Value**|**Unit**|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|||**SPB**||||||||||||||**SPB**|||||
|_R_th1||0.015|||||||K/W||||_C_th1|||0.0001878||||Ws/K|
|_R_th2||0.03|||||||||||_C_th2|||0.0007106|||||
|_R_th3||0.056|||||||||||_C_th3|||0.000988|||||
|_R_th4||0.197|||||||||||_C_th4|||0.002791|||||
|_R_th5||0.216|||||||||||_C_th5|||0.007285|||||
|_R_th6||0.083|||||||||||_C_th6|||0.063|||||
|||Ptot(t)|||||||||||External Heatsink<br>**Tcase**<br>**Tamb**<br>Rth,n<br>Cth,n||||||||
||||Ptot(t)||**Tj**<br>Cth1<br>Cth2<br>Rth1||||||||Rth,n||||||||
||||||||||||||||||||||
||||||||||||||||||||||
||||||||||||||Cth,n||||||||
||||||||||||||||||||||
||||||||||||||||||||||
||||||||||||||||||||||
||||||||||||||||||||||



2007-12-14 

Rev. 2. 6 

Page 4 

**SPB11N60C3** 

## **1 Power dissipation** 

## _P_ tot = _f_ ( _T_ C ) 

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SPP11N60C3<br>140<br>W<br>120<br>110<br>100<br>90<br>80<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>0 20 40 60 80 100 120 °C 160<br>T C<br>tot<br>P<br>**----- End of picture text -----**<br>


## **3 Safe operating area** 

## _I_ D = _f_ ( _V_ DS ) 

parameter : _D_ = 0 , _T_ C =25°C 

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10 2<br> A<br>10 1<br>10 0<br>tp = 0.001 ms<br>tp = 0.01 ms<br>10 -1 tp = 0.1 ms<br>tp = 1 ms<br>DC<br>10 -2<br>10 [0] 10 [1] 10 [2]  V 10 [3]<br>V DS<br>I D<br>**----- End of picture text -----**<br>


## **2 Power dissipation FullPAK** 

## _P_ tot = _f_ ( _T_ C ) 

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35<br> W<br>25<br>20<br>15<br>10<br>5<br>0<br>0 20 40 60 80 100 120  °C 160<br>T C<br>tot<br>P<br>**----- End of picture text -----**<br>


## **4 Safe operating area FullPAK** 

## _I_ D = _f_ ( _V_ DS ) 

## parameter: _D_ = 0, _T_ C = 25°C 

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10 2<br> A<br>10 1<br>10 0<br>tp = 0.001 ms<br>tp = 0.01 ms<br>tp = 0.1 ms<br>10 -1 tp = 1 ms<br>tp = 10 ms<br>DC<br>10 -2<br>10 [0] 10 [1] 10 [2]  V 10 [3]<br>V DS<br>I D<br>**----- End of picture text -----**<br>


200 7 -12-14 

Rev. 2. 6 

Page 5 

**SPB11N60C3** 

## **5 Transient thermal impedance** 

_Z_ thJC = _f_ ( _t_ p) 

## parameter: _D_ = _t_ p/ _T_ 

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10 1<br> K/W<br>10 0<br>10 -1<br>D = 0.5<br>10 -2 D = 0.2<br>D = 0.1<br>D = 0.05<br>D = 0.02<br>-3 D = 0.01<br>10<br>single pulse<br>10 -4<br>10 [-7] 10 [-6] 10 [-5] 10 [-4] 10 [-3]  s 10 [-1]<br>t<br>p<br>thJC<br>Z<br>**----- End of picture text -----**<br>


## **7 Typ. output characteristic** 

_I_ D = _f_ ( _V_ DS ); _T_ j =25°C 

parameter: _t_ p = 10 µs, _V_ GS 

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40<br>20V<br>A<br>10V<br>8V<br>32 7V<br>28<br>24 6,5V<br>20<br>6V<br>16<br>12 5,5V<br>8<br>5V<br>4 4,5V<br>0<br>0 3 6 9 12 15 18 21 V 27<br>V DS<br>I D<br>**----- End of picture text -----**<br>


## **6 Transient thermal impedance FullPAK** 

_Z_ thJC = _f_ ( _t_ p ) parameter: _D_ = _t_ p / _t_ 

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10 1<br> K/W<br>10 0<br>10 -1<br>D = 0.5<br>D = 0.2<br>D = 0.1<br>10 -2 D = 0.05<br>D = 0.02<br>D = 0.01<br>single pulse<br>10 -3<br>10 -4<br>10 [-7] 10 [-6] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1]  s 10 [1]<br>t<br>p<br>thJC<br>Z<br>**----- End of picture text -----**<br>


## **8 Typ. output characteristic** 

_I_ D = _f_ ( _V_ DS ); _T_ j =150°C parameter: _t_ p = 10 µs, _V_ GS 

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22<br> A 20V<br>8V<br>7V<br>18 7.5V<br>6V<br>16<br>14<br>5.5V<br>12<br>10<br>5V<br>8<br>6<br>4.5V<br>4<br>4V<br>2<br>0<br>0 5 10 15  V 25<br>V DS<br>I D<br>**----- End of picture text -----**<br>


2007-12-14 

Rev. 2. 6 

Page 6 

**SPB11N60C3** 

## **9 Typ. drain-source on resistance** 

_R_ DS(on)= _f_ ( _I_ D) 

parameter: _T_ j =150°C, _V_ GS 

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2<br>Ω<br>4V 4.5V 5V 5.5V 6V<br>1.6<br>1.4<br>1.2<br>1<br>0.8<br>6.5V<br>0.6 8V<br>20V<br>0.4<br>0 2 4 6 8 10 12 14 16  A 20<br>I D<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


## **11 Typ. transfer characteristics** 

_I_ D= _f_ ( _V_ GS ); _V_ DS≥ 2 x _I_ D x _R_ DS(on)max parameter: _t_ p = 10 µs 

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40<br> A<br>25°C<br>32<br>28<br>24<br>150°C<br>20<br>16<br>12<br>8<br>4<br>0<br>0 2 4 6 8 10 12  V 15<br>V GS<br>I D<br>**----- End of picture text -----**<br>


## **10 Drain-source on-state resistance** 

_R_ DS(on) = _f_ ( _T_ j) 

parameter : _I_ D = 7 A, _V_ GS = 10 V 

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SPP11N60C3<br>2.1<br>Ω<br>1.8<br>1.6<br>1.4<br>1.2<br>1<br>0.8<br>0.6<br>98%<br>0.4 typ<br>0.2<br>0<br>-60 -20 20 60 100 °C 180<br>T<br>j<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


## **12 Typ. gate charge** 

_V_ GS = _f_ ( _Q_ Gate) 

parameter: _I_ D = 11 A pulsed 

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SPP11N60C3<br>16<br>V<br>12<br>0,2 V DS max<br>10 0,8 V DS max<br>8<br>6<br>4<br>2<br>0<br>0 10 20 30 40 50 nC 70<br>Q Gate<br>GS<br>V<br>**----- End of picture text -----**<br>


2007-12-14 

Rev. 2. 6 

Page 7 

**SPB11N60C3** 

## **13 Forward characteristics of body diode** 

_I_ F = _f_ (VSD) 

parameter: _T_ j , tp = 10 µs 

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10 2 SPP11N60C3<br>A<br>10 1<br>10 0<br>T j = 25 °C typ<br>T j = 150 °C typ<br>T j = 25 °C (98%)<br>T j = 150 °C (98%)<br>10 -1<br>0 0.4 0.8 1.2 1.6 2 2.4 V 3<br>V SD<br>I F<br>**----- End of picture text -----**<br>


## **15 Typ. switching time** 

_t_ = _f_ ( _R_ G ), inductive load, _T_ j =125°C 

par.: _V_ DS =380V, _V_ GS =0/+13V, _I_ D=11 A 

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350<br> ns<br>250<br>200<br>td(off)<br>td(on)<br>150 tr<br>tf<br>100<br>50<br>0<br>0 10 20 30 40 50 Ω 70<br>R G<br>t<br>**----- End of picture text -----**<br>


## **14 Typ. switching time** 

_t_ = _f_ ( _I_ D), inductive load, _T_ j =125°C 

par.: _V_ DS =380V, _V_ GS =0/+13V, _R_ G =6.8Ω 

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70<br> ns<br>60<br>55 td(off)<br>50<br>45<br>40<br>35<br>30<br>25<br>20 tf<br>15<br>td(on)<br>10<br>5 tr<br>0<br>0 2 4 6 8  A 12<br>I D<br>t<br>**----- End of picture text -----**<br>


## **16 Typ. drain current slope** 

d _i_ /d _t_ = f( _R_ G ), inductive load, _T_ j = 125°C par.: _V_ DS =380V, _V_ GS =0/+13V, _I_ D=11A 

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3000<br> A/µs<br>2000<br>1500<br>1000<br>di/dt(off)<br>500<br>di/dt(on)<br>0<br>0 20 40 60 80 Ω 120<br>R G<br>/d i d t<br>**----- End of picture text -----**<br>


2007-12-14 

Rev. 2. 6 

Page 8 

**SPB11N60C3** 

## **17 Typ. drain source voltage slope** 

d _v_ /d _t_ = f( _R_ G ), inductive load, _T_ j = 125°C par.: _V_ DS =380V, _V_ GS =0/+13V, _I_ D=11A 

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140<br> V/ns<br>dv/dt(off)<br>120<br>110<br>100<br>90<br>80<br>70<br>60<br>50<br>40 dv/dt(on)<br>30<br>20<br>10<br>0 10 20 30 40 50 Ω 70<br>R G<br>/d t<br>v<br>d<br>**----- End of picture text -----**<br>


## **19 Typ. switching losses** 

_E_ = _f_ ( _R_ G ), inductive load, _T_ j =125°C 

par.: _V_ DS =380V, _V_ GS =0/+13V, _I_ D=11A 

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0.24<br>*) Eon includes SPD06S60 diode<br>    commutation losses<br> mWs<br>0.16 Eoff<br>0.12<br>0.08<br>Eon*<br>0.04<br>0<br>0 10 20 30 40 50 Ω 70<br>R G<br>E<br>**----- End of picture text -----**<br>


## **18 Typ. switching losses** 

_E_ = _f_ ( _I_ D), inductive load, _T_ j =125°C par.: _V_ DS =380V, _V_ GS =0/+13V, _R_ G =6.8Ω 

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**----- Start of picture text -----**<br>
0.04<br>*) Eon includes SPD06S60 diode<br>    commutation losses<br> mWs<br>0.03<br>0.025<br>0.02<br>0.015<br>Eon*<br>0.01<br>0.005<br>Eoff<br>0<br>0 2 4 6 8  A 12<br>I D<br>E<br>**----- End of picture text -----**<br>


## **20 Avalanche SOA** 

_I_ AR = _f_ ( _t_ AR) 

par.: _T_ j ≤ 150 °C 

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11<br>A<br>9<br>8<br>7<br>6<br>5 T j (START) =25°C<br>4<br>3 T j (START)=125°C<br>2<br>1<br>010 [-3] 10 [-2] 10 [-1] 10 [0] 10 [1] 10 [2] µs 10 [4]<br>t AR<br>I AR<br>**----- End of picture text -----**<br>


2007-12-14 

Rev. 2. 6 

Page 9 

**SPB11N60C3** 

## **21 Avalanche energy** 

## _E_ AS = _f_ ( _T_ j ) 

## **22 Drain-source breakdown voltage** 

## _V_ (BR)DSS = _f_ ( _T_ j ) 

par.: _I_ D = 5.5 A, _V_ DD = 50 V 

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350<br>mJ<br>250<br>200<br>150<br>100<br>50<br>0<br>20 40 60 80 100 120 °C 160<br>T<br>j<br>AS<br>E<br>**----- End of picture text -----**<br>


## **23 Avalanche power losses** 

_P_ AR = _f_ ( _f_ ) 

## parameter: _E_ AR =0.6mJ 

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SPP11N60C3<br>720<br>V<br>680<br>660<br>640<br>620<br>600<br>580<br>560<br>540<br>-60 -20 20 60 100 °C 180<br>T<br>j<br>(BR)DSS<br>V<br>**----- End of picture text -----**<br>


## **24 Typ. capacitances** 

## _C_ = _f_ ( _V_ DS ) 

## parameter: _V_ GS =0V, _f_ =1 MHz 

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**----- Start of picture text -----**<br>
10 4<br>300<br> pF<br> W C iss<br>10 3<br>200<br>150 10 2 C oss<br>100<br>10 1 C rss<br>50<br>010 [4] 10 [5]  Hz 10 [6] 10 00 100 200 300 400  V 600<br>f V DS<br>AR<br>P C<br>**----- End of picture text -----**<br>


2007-12-14 

Rev. 2. 6 

Page 10 

**SPB11N60C3** 

## **25 Typ.** _C_ oss **stored energy** 

_E_ oss= _f_ ( _V_ DS ) 

**==> picture [226 x 259] intentionally omitted <==**

**----- Start of picture text -----**<br>
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Definition of diodes switching characteristics 

200 7 -12-14 

Rev. 2. 6 

Page 11 

**SPB11N60C3** 

## PG-TO263 

200 7 -12-14 

Rev. 2. 6 

Page 12 

**SPB11N60C3** 

## **Published by Infineon Technologies AG 81726 Munich, Germany © 2007 Infineon Technologies AG All Rights Reserved.** 

## **Legal Disclaimer** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. 

## **Information** 

For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). 

## **Warnings** 

Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 

2007-12-14 

Rev. 2. 6 

Page 13 



## Links

- [View this product on Novapart](https://novapart.co/products/SPB11N60C3ATMA1/power-mosfet-n-channel-650-v-11-a-038-ohm-to-263)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/spb11n60c3atma1/mosfet-n-ch-650v-11a-d2pak/dp/2212858)
---

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